3643235

Information

• Patent Grant
• 3643235

• References
• Source

• Patent Number

  3,643,235

• Date Filed

  Not available

• Date Issued

  Tuesday, February 15, 1972
  52 years ago

• CPC

  • H03K3/35 - by the use, as active elements, of bipolar semiconductor devices with more than two PN junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
  • G11C11/4113 - with at least one cell access to base or collector of at least one of said transistors
  • G11C11/4116 - with at least one cell access via separately connected emittors of said transistors or via multiple emittors
  • G11C15/00 - Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts
  • H01L21/00 - Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L27/00 - Devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate
  • H01L27/0744 - without components of the field effect type
  • H01L27/0821 - Combination of lateral and vertical transistors only
  • H01L27/0828 - Combination of direct and inverse vertical transistors
  • H01L27/10 - including a plurality of individual components in a repetitive configuration
  • H01L27/1022 - including bipolar transistors
  • H01L27/1025 - Static bipolar memory cell structures
  • H03K3/286 - bistable
  • H03K3/288 - using additional transistors in the input circuit

• US Classifications

  • 365 - Static information storage and retrieval
  • 257 - Active solid-state devices
  • 327 - Miscellaneous active electrical nonlinear devices, circuits, and systems
  • 968 - Horology