3703420

Information

• Patent Grant
• 3703420

• References
• Source

• Patent Number

  3,703,420

• Date Filed

  Not available

• Date Issued

  Tuesday, November 21, 1972
  52 years ago

• CPC

  • H01L29/06 - characterised by their shape characterised by the shapes, relative sizes, or dispositions of the semiconductor regions; characterised by the concentration or distribution of impurities within semiconductor regions
  • H01L21/00 - Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/22 - Diffusion of impurity materials
  • H01L21/225 - using diffusion into or out of a solid from or into a solid phase
  • H01L27/00 - Devices consisting of a plurality of semiconductor or other solid state components formed in or on a common substrate
  • H01L29/73 - Bipolar junction transistors
  • Y10S148/037 - Diffusion-deposition
  • Y10S148/053 - Field effect transistors fets
  • Y10S148/085 - Isolated-integrated
  • Y10S148/096 - Lateral transistor
  • Y10S148/122 - Polycrystalline
  • Y10S148/167 - Two diffusions in one hole
  • Y10S438/969 - Simultaneous formation of monocrystalline and polycrystalline regions

• US Classifications

  • 438 - Semiconductor device manufacturing: process
  • 148 - Metal treatment
  • 257 - Active solid-state devices