Simultaneous formation of monocrystalline and polycrystalline regions

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CPC
Y10S438/969

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YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10S438/00Semiconductor device manufacturing: process

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Y10S438/969Simultaneous formation of monocrystalline and polycrystalline regions

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Patents Grantslast 30 patents

Information Patent Grant
Polycrystalline semiconductor layers and methods for forming the same
- Patent number 8,236,603
- Issue date Aug 7, 2012
- Solexant Corp.
- Leslie G. Fritzemeier
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Method of manufacturing silicon carbide self-aligned epitaxial MOSF...
- Patent number 7,994,017
- Issue date Aug 9, 2011
- Cree, Inc.
- Christopher Harris
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Silicon carbide self-aligned epitaxial MOSFET for high powered devi...
- Patent number 7,629,616
- Issue date Dec 8, 2009
- Cree, Inc.
- Christopher Harris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective epitaxy process with alternating gas supply
- Patent number 7,572,715
- Issue date Aug 11, 2009
- Applied Materials, Inc.
- Yihwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective deposition
- Patent number 7,560,352
- Issue date Jul 14, 2009
- Applied Materials, Inc.
- David K. Carlson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective epitaxy process with alternating gas supply
- Patent number 7,521,365
- Issue date Apr 21, 2009
- Applied Materials, Inc.
- Yihwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective epitaxy process with alternating gas supply
- Patent number 7,312,128
- Issue date Dec 25, 2007
- Applied Materials, Inc.
- Yihwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High performance vertical PNP transistor method
- Patent number 7,265,010
- Issue date Sep 4, 2007
- International Business Machines Corporation
- Peter B. Gray
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin film transistor and method of manufacturing the same
- Patent number 7,227,186
- Issue date Jun 5, 2007
- Hitachi, Ltd.
- Takuo Tamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single electron transistor manufacturing method by electro-migratio...
- Patent number 7,067,341
- Issue date Jun 27, 2006
- STMicroelectronics S.r.l.
- Danilo Mascolo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bi-layer silicon film and method of fabrication
- Patent number 6,991,999
- Issue date Jan 31, 2006
- Applied Materials, Inc.
- Li Fu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making an integrated circuit device with dielectrically...
- Patent number 6,989,552
- Issue date Jan 24, 2006
- Agere Systems Inc.
- Charles Arthur Goodwin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
N-channel metal oxide semiconductor (NMOS) driver circuit and metho...
- Patent number 6,964,892
- Issue date Nov 15, 2005
- International Business Machines Corporation
- Lawrence A. Clevenger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High performance vertical PNP transistor and method
- Patent number 6,909,164
- Issue date Jun 21, 2005
- International Business Machines Corporation
- Peter B. Gray
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin film transistor and display using the same
- Patent number 6,903,371
- Issue date Jun 7, 2005
- Hitachi, Ltd.
- Takuo Tamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process and unit for production of polycrystalline silicon film
- Patent number 6,884,699
- Issue date Apr 26, 2005
- Mitsubishi Denki Kabushiki Kaisha
- Tetsuya Ogawa
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Irradiation of manufacturing a thin film transistor by laser irradi...
- Patent number 6,716,688
- Issue date Apr 6, 2004
- Hitachi, Ltd.
- Takuo Tamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with thin film active region having clusters of differen...
- Patent number 6,657,227
- Issue date Dec 2, 2003
- Hitachi, Ltd.
- Takuo Tamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor having dielectrically isolated sources and...
- Patent number 6,593,174
- Issue date Jul 15, 2003
- STMicroelectronics, Inc.
- Richard A. Blanchard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for making an integrated circuit device with dielectrically...
- Patent number 6,500,717
- Issue date Dec 31, 2002
- Agere Systems Inc.
- Charles Arthur Goodwin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
N-channel metal oxide semiconductor (NMOS) driver circuit and metho...
- Patent number 6,433,397
- Issue date Aug 13, 2002
- International Business Machines Corporation
- Lawrence A. Clevenger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transitor having dielectrically isolated sources and d...
- Patent number 6,420,764
- Issue date Jul 16, 2002
- STMicroelectronics, Inc.
- Richard A. Blanchard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method achieving higher inversion layer mobility in novel silicon c...
- Patent number 6,407,014
- Issue date Jun 18, 2002
- Philips Electronics North America Corporation
- Dev Alok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a trench structure in a silicon substrate
- Patent number 6,337,255
- Issue date Jan 8, 2002
- Infineon Technologies AG
- Stephan Bradl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process of making diamond-metal ohmic junction semiconductor device
- Patent number 6,184,059
- Issue date Feb 6, 2001
- Canon Kabushiki Kaisha
- Keiji Hirabayashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for producing an epitaxial layer with laterally varying doping
- Patent number 6,171,935
- Issue date Jan 9, 2001
- Siemens Aktiengesellschaft
- Paul Nance
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a field effect transistor having an elevated sourc...
- Patent number 6,057,200
- Issue date May 2, 2000
- Micron Technology, Inc.
- Kirk Prall
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor constructions comprising electrically conductive plug...
- Patent number 5,998,844
- Issue date Dec 7, 1999
- Micron Technology, Inc.
- Kirk Prall
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming planar field effect transistors with source and...
- Patent number 5,913,135
- Issue date Jun 15, 1999
- Texas Instruments Incorporated
- Ih-Chin Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication method for semiconductor device
- Patent number 5,840,613
- Issue date Nov 24, 1998
- NEC Corporation
- Fumihiko Sato
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF MANUFACTURING SILICON CARBIDE SELF-ALIGNED EPITAXIAL MOSF...
- Publication number 20100041195
- Publication date Feb 18, 2010
- Cree, Inc.
- Christopher Harris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon carbide self-aligned epitaxial MOSFET and method of manufac...
- Publication number 20080203398
- Publication date Aug 28, 2008
- Christopher Harris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE EPITAXY PROCESS WITH ALTERNATING GAS SUPPLY
- Publication number 20070207596
- Publication date Sep 6, 2007
- Yihwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE EPITAXY PROCESS WITH ALTERNATING GAS SUPPLY
- Publication number 20060216876
- Publication date Sep 28, 2006
- Yihwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Selective deposition
- Publication number 20060166414
- Publication date Jul 27, 2006
- David K. Carlson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Selective epitaxy process with alternating gas supply
- Publication number 20060115934
- Publication date Jun 1, 2006
- Yihwan Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Thin film transistor and method of manufacturing the same
- Publication number 20050202612
- Publication date Sep 15, 2005
- Hitachi, Ltd
- Takuo Tamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Single electron transistor manufacturing method by electro-migratio...
- Publication number 20050090081
- Publication date Apr 28, 2005
- STMicroelectronics S.r.l.
- Danilo Mascolo
- B82 - NANO-TECHNOLOGY
Information Patent Application
High performance vertical PNP transistor method
- Publication number 20040248352
- Publication date Dec 9, 2004
- Peter B. Gray
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Thin film transistor and display using the same
- Publication number 20040155295
- Publication date Aug 12, 2004
- Hitachi, Ltd
- Takuo Tamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High performance vertical PNP transistor and method
- Publication number 20040099895
- Publication date May 27, 2004
- International Business Machines Corporation
- Peter B. Gray
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Thin film transistor and method of manufacturing the same
- Publication number 20030094658
- Publication date May 22, 2003
- Hitachi, Ltd
- Takuo Tamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Bi-layer silicon film and method of fabrication
- Publication number 20030047734
- Publication date Mar 13, 2003
- APPLIED MATERIALS, INC.
- Li Fu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for making an integrated circuit device with dielectrically...
- Publication number 20030034526
- Publication date Feb 20, 2003
- Charles Arthur Goodwin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
N-channel metal oxide semiconductor (NMOS) driver circuit and metho...
- Publication number 20020149063
- Publication date Oct 17, 2002
- Lawrence A. Clevenger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of achieving higher inversion layer mobility in novel silico...
- Publication number 20020130325
- Publication date Sep 19, 2002
- PHILIPS ELECTRONICS NORTH AMERICA CORPORATION
- Dev Alok
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field effect transistor having dielectrically isolated sources and...
- Publication number 20020132432
- Publication date Sep 19, 2002
- STMicroelectronics, Inc.
- Richard A. Blanchard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
N-CHANNEL METAL OXIDE SEMICONDUCTOR (NMOS) DRIVER CIRCUIT AND METHO...
- Publication number 20020089020
- Publication date Jul 11, 2002
- Lawrence A. Clevenger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for making an integrated circuit device with dielectrically...
- Publication number 20020068420
- Publication date Jun 6, 2002
- Lucent Technologies Inc.
- Charles Arthur Goodwin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Thin film transistor and method of manufacturing the same
- Publication number 20020066931
- Publication date Jun 6, 2002
- Takuo Tamura
- H01 - BASIC ELECTRIC ELEMENTS

Simultaneous formation of monocrystalline and polycrystalline regions

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Polycrystalline semiconductor layers and methods for forming the same

Method of manufacturing silicon carbide self-aligned epitaxial MOSF...

Silicon carbide self-aligned epitaxial MOSFET for high powered devi...

Selective epitaxy process with alternating gas supply

Selective deposition

Selective epitaxy process with alternating gas supply

Selective epitaxy process with alternating gas supply

High performance vertical PNP transistor method

Thin film transistor and method of manufacturing the same

Single electron transistor manufacturing method by electro-migratio...

Bi-layer silicon film and method of fabrication

Method for making an integrated circuit device with dielectrically...

N-channel metal oxide semiconductor (NMOS) driver circuit and metho...

High performance vertical PNP transistor and method

Thin film transistor and display using the same

Process and unit for production of polycrystalline silicon film

Irradiation of manufacturing a thin film transistor by laser irradi...

Transistor with thin film active region having clusters of differen...

Field effect transistor having dielectrically isolated sources and...

Method for making an integrated circuit device with dielectrically...

N-channel metal oxide semiconductor (NMOS) driver circuit and metho...

Field effect transitor having dielectrically isolated sources and d...

Method achieving higher inversion layer mobility in novel silicon c...

Method for forming a trench structure in a silicon substrate

Process of making diamond-metal ohmic junction semiconductor device

Process for producing an epitaxial layer with laterally varying doping

Method of making a field effect transistor having an elevated sourc...

Semiconductor constructions comprising electrically conductive plug...

Method for forming planar field effect transistors with source and...

Fabrication method for semiconductor device

Patents Applicationslast 30 patents

METHOD OF MANUFACTURING SILICON CARBIDE SELF-ALIGNED EPITAXIAL MOSF...

Silicon carbide self-aligned epitaxial MOSFET and method of manufac...

SELECTIVE EPITAXY PROCESS WITH ALTERNATING GAS SUPPLY

SELECTIVE EPITAXY PROCESS WITH ALTERNATING GAS SUPPLY

Selective deposition

Selective epitaxy process with alternating gas supply

Thin film transistor and method of manufacturing the same

Single electron transistor manufacturing method by electro-migratio...

High performance vertical PNP transistor method

Thin film transistor and display using the same

High performance vertical PNP transistor and method

Thin film transistor and method of manufacturing the same

Bi-layer silicon film and method of fabrication

Method for making an integrated circuit device with dielectrically...

N-channel metal oxide semiconductor (NMOS) driver circuit and metho...

Method of achieving higher inversion layer mobility in novel silico...

Field effect transistor having dielectrically isolated sources and...

N-CHANNEL METAL OXIDE SEMICONDUCTOR (NMOS) DRIVER CIRCUIT AND METHO...

Method for making an integrated circuit device with dielectrically...

Thin film transistor and method of manufacturing the same