3845495

Information

• Patent Grant
• 3845495

• References
• Source

• Patent Number

  3,845,495

• Date Filed

  Not available

• Date Issued

  Tuesday, October 29, 1974
  51 years ago

• CPC

  • H01L29/7816 - Lateral DMOS transistors
  • H01L29/0696 - of cellular field-effect devices
  • H01L29/402 - Field plates
  • H01L29/42368 - the thickness being non-uniform
  • H01L29/7801 - DMOS transistors
  • H01L29/7824 - with a substrate comprising an insulating layer
  • H01L29/78624 - the source and the drain regions being asymmetrical
  • H01L29/78675 - with normal-type structure
  • Y10S148/049 - Equivalence and options
  • Y10S148/085 - Isolated-integrated
  • Y10S148/15 - Silicon on sapphire SOS
  • Y10S148/167 - Two diffusions in one hole

• US Classifications

  • 257 - Active solid-state devices
  • 148 - Metal treatment