Lateral DMOS transistors

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CPC
H01L29/7816

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/7816Lateral DMOS transistors

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and manufacturing method therefor
- Patent number 12,230,693
- Issue date Feb 18, 2025
- CSMC Technologies Fab2 Co., Ltd.
- Nailong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shield structure for backside through substrate vias (TSVs)
- Patent number 12,230,554
- Issue date Feb 18, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Min-Feng Kao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS with field plates
- Patent number 12,230,710
- Issue date Feb 18, 2025
- ABLIC INC.
- Shinichirou Wada
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Load switch including back-to-back connected transistors
- Patent number 12,224,740
- Issue date Feb 11, 2025
- Nuvolta Technoloiges (Heifei) Co., Ltd.
- Jinbiao Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having metal gate and poly gate
- Patent number 12,217,975
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Alexander Kalnitsky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid component with silicon and wide bandgap semconductor material
- Patent number 12,218,235
- Issue date Feb 4, 2025
- Texas Instruments Incorporated
- Christopher Boguslaw Kocon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method
- Patent number 12,218,134
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Sung-Hsin Yang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 12,218,189
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Hsin-Fu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor doped region with biased isolated members
- Patent number 12,211,807
- Issue date Jan 28, 2025
- Texas Instruments Incorporated
- Alexei Sadovnikov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral double diffused MOS device
- Patent number 12,211,909
- Issue date Jan 28, 2025
- NuVolta Technologies (Hefei) Co., Ltd.
- John Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistor having improved layout
- Patent number 12,211,916
- Issue date Jan 28, 2025
- Ampleon Netherlands B.V.
- Patrick Valk
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultra-high voltage resistor with voltage sense
- Patent number 12,211,894
- Issue date Jan 28, 2025
- Silanna Asia Pte Ltd
- Wen Cheng Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-voltage transistor and method for fabricating the same
- Patent number 12,205,995
- Issue date Jan 21, 2025
- United Microelectronics Corp.
- Ling-Gang Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS device and method for preparation thereof
- Patent number 12,205,996
- Issue date Jan 21, 2025
- CSMC Technologies FAB2 Co., Ltd.
- Huajun Jin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS with polysilicon deep drain
- Patent number 12,199,179
- Issue date Jan 14, 2025
- Powerchip Semiconductor Manufacturing Corporation
- Hirokazu Fujimaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a superlattice and an asymmetric cha...
- Patent number 12,199,180
- Issue date Jan 14, 2025
- ATOMERA INCORPORATED
- Hideki Takeuchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having deep trench structure and method of man...
- Patent number 12,183,639
- Issue date Dec 31, 2024
- SK keyfoundry Inc.
- Yang Beom Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate drive circuit and drive method for power semiconductor device
- Patent number 12,184,268
- Issue date Dec 31, 2024
- Innovision Semiconductor Inc.
- Feng Han
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structures for a laterally-diffused metal-oxide-semiconductor trans...
- Patent number 12,176,395
- Issue date Dec 24, 2024
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Lwin Min Kyaw
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage MOSFET device with improved breakdown voltage
- Patent number 12,170,329
- Issue date Dec 17, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Anupam Dutta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic device including a semiconductor layer within a trench a...
- Patent number 12,166,068
- Issue date Dec 10, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Ralph N. Wall
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage device with linearizing field plate configuration
- Patent number 12,166,476
- Issue date Dec 10, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Santosh Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS transistor and method for manufacturing the same
- Patent number 12,166,091
- Issue date Dec 10, 2024
- Silergy Semiconductor Technology (Hangzhou) Ltd.
- Meng Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Connection arrangements for integrated lateral diffusion field effe...
- Patent number 12,159,815
- Issue date Dec 3, 2024
- Silanna Pte Ltd
- Shanghui Larry Tu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,159,934
- Issue date Dec 3, 2024
- Renesas Electronics Corporation
- Katsumi Eikyu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral double-diffused metal oxide semiconductor device and manufa...
- Patent number 12,154,983
- Issue date Nov 26, 2024
- CSMC Technologies Fab2 Co., Ltd.
- Nailong He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing same
- Patent number 12,154,984
- Issue date Nov 26, 2024
- DB HiTek, Co., Ltd.
- Jun Hee Cho
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diffused field-effect transistor
- Patent number 12,154,972
- Issue date Nov 26, 2024
- NEXCHIP SEMICONDUCTOR CORPORATION
- Menghui Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High voltage semiconductor device comprising a combined junction te...
- Patent number 12,148,793
- Issue date Nov 19, 2024
- SiEn (QingDao) Integrated Circuits Co., Ltd
- Min-Hwa Chi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of reducing the electrical and thermal resistance of SiC su...
- Patent number 12,148,825
- Issue date Nov 19, 2024
- Purdue Research Foundation
- James Albert Cooper
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
LATERALLY SILICON CARBIDE JUNCTION GATE FIELD EFFECT TRANSISTOR DEV...
- Publication number 20250063760
- Publication date Feb 20, 2025
- SUZHOU WATECH ELECTRONICS CO., LTD.
- Changchang WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-FREQUENCY DRAIN-EXTENDED METAL-OXIDE-SEMICONDUCTOR (DEMOS) DEV...
- Publication number 20250056829
- Publication date Feb 13, 2025
- Zhejiang University
- Kai XU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERALLY DIFFUSED METAL OXIDE SEMICONDUCTOR (LDMOS) TRANSISTOR INT...
- Publication number 20250056833
- Publication date Feb 13, 2025
- QUALCOMM Incorporated
- Taehun KWON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250048672
- Publication date Feb 6, 2025
- Rohm Co., Ltd.
- Shoji TAKEI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURE
- Publication number 20250048671
- Publication date Feb 6, 2025
- United Microelectronics Corp.
- Hsuan-Kai Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME
- Publication number 20250046649
- Publication date Feb 6, 2025
- DB HiTek Co., Ltd.
- Sang Il HWANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
- Publication number 20250040230
- Publication date Jan 30, 2025
- SILERGY SEMICONDUCTOR TECHNOLOGY (HANGZHOU) LTD
- Jiajun Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL DIFFUSED METAL OXIDE SEMICONDUCTOR DEVICE
- Publication number 20250040180
- Publication date Jan 30, 2025
- UNITED MICROELECTRONICS CORP.
- Zong-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Laterally-Diffused Metal-Oxide Semiconductor Devices with Reduced G...
- Publication number 20250040178
- Publication date Jan 30, 2025
- Avago Technologies International Sales Pte. Limited
- Akira Ito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH A HIGH K FIELD RELIEF DIELECTRIC STRUCTURE
- Publication number 20250040179
- Publication date Jan 30, 2025
- TEXAS INSTRUMENTS INCORPORATED
- Pushpa Mahalingam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Area Efficient Fin-Based Laterally-Diffused Metal-Oxide Semiconduct...
- Publication number 20250040177
- Publication date Jan 30, 2025
- Avago Technologies International Sales Pte. Limited
- Qing Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250040219
- Publication date Jan 30, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Po-Yu CHEN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250022954
- Publication date Jan 16, 2025
- Rohm Co., Ltd.
- Mitsuhide KORI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ETCHING METHOD FOR SEMICONDUCTOR STRUCTURE COMPRISING SUBSTRATE, FI...
- Publication number 20250022718
- Publication date Jan 16, 2025
- SILERGY SEMICONDUCTOR TECHNOLOGY (HANGZHOU) LTD
- Huan Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20250015146
- Publication date Jan 9, 2025
- RENESAS ELECTRONICS CORPORATION
- Yotaro GOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND METHOD FOR FABRICATING THE SAME
- Publication number 20250015179
- Publication date Jan 9, 2025
- United Microelectronics Corp.
- Zong-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURE
- Publication number 20250015180
- Publication date Jan 9, 2025
- Powerchip Semiconductor Manufacturing Corporation
- Jih-Chien Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH NITROGEN DOPED FIELD RELIEF DIELECTRIC LAYER
- Publication number 20250006836
- Publication date Jan 2, 2025
- TEXAS INSTRUMENTS INCORPORATED
- Jackson Bauer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE CONFIGURED FOR GATE DIELECTRIC MONITORING
- Publication number 20250004034
- Publication date Jan 2, 2025
- Analog Devices International Unlimited Company
- Edward John Coyne
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240421197
- Publication date Dec 19, 2024
- Fuji Electric Co., Ltd.
- Takahide TANAKA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20240421166
- Publication date Dec 19, 2024
- RENESAS ELECTRONICS CORPORATION
- Makoto KOSHIMIZU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH GUARD RING ISOLATING POWER DEVICE
- Publication number 20240421183
- Publication date Dec 19, 2024
- SK keyfoundry Inc.
- Kwangil KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME
- Publication number 20240421198
- Publication date Dec 19, 2024
- Rohm Co., Ltd.
- Kunihiko Iwamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20240421221
- Publication date Dec 19, 2024
- ROHM CO., LTD.
- Masaki NAGATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LASER ANNEAL FORMED NANOSHEET LDMOS TRANSISTOR
- Publication number 20240413242
- Publication date Dec 12, 2024
- TEXAS INSTRUMENTS INCORPORATED
- Henry Litzmann Edwards
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE DRIVE CIRCUIT AND DRIVE METHOD FOR POWER SEMICONDUCTOR DEVICE
- Publication number 20240405761
- Publication date Dec 5, 2024
- INNOVISION SEMICONDUCTOR INC
- Feng HAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH VOLTAGE DEVICE STRUCTURE AND METHODS OF FORMING THE SAME
- Publication number 20240405123
- Publication date Dec 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chien-Ming KU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF CONTROLLING BREAKDOWN VOLTAGE IN MICROELECTRONIC DEVICES
- Publication number 20240405066
- Publication date Dec 5, 2024
- Micron Technology, Inc.
- Gaurav Musalgaonkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO IMPLANT P-TYPE AND/OR N-TYPE RINGS IN A SEMICONDUCTOR DEVICE
- Publication number 20240405124
- Publication date Dec 5, 2024
- ALLEGRO MICROSYSTEMS, LLC
- Yu-Chun Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20240395929
- Publication date Nov 28, 2024
- United Microelectronics Corp.
- Chen-Yuan Lin
- H01 - BASIC ELECTRIC ELEMENTS

Lateral DMOS transistors

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device and manufacturing method therefor

Shield structure for backside through substrate vias (TSVs)

LDMOS with field plates

Load switch including back-to-back connected transistors

Semiconductor device having metal gate and poly gate

Hybrid component with silicon and wide bandgap semconductor material

Semiconductor device and method

Semiconductor device and method for manufacturing the same

Semiconductor doped region with biased isolated members

Lateral double diffused MOS device

Field-effect transistor having improved layout

Ultra-high voltage resistor with voltage sense

High-voltage transistor and method for fabricating the same

LDMOS device and method for preparation thereof

LDMOS with polysilicon deep drain

Semiconductor device including a superlattice and an asymmetric cha...

Semiconductor device having deep trench structure and method of man...

Gate drive circuit and drive method for power semiconductor device

Structures for a laterally-diffused metal-oxide-semiconductor trans...

High voltage MOSFET device with improved breakdown voltage

Electronic device including a semiconductor layer within a trench a...

High voltage device with linearizing field plate configuration

LDMOS transistor and method for manufacturing the same

Connection arrangements for integrated lateral diffusion field effe...

Semiconductor device

Lateral double-diffused metal oxide semiconductor device and manufa...

Semiconductor device and method for manufacturing same

Diffused field-effect transistor

High voltage semiconductor device comprising a combined junction te...

Methods of reducing the electrical and thermal resistance of SiC su...

Patents Applicationslast 30 patents

LATERALLY SILICON CARBIDE JUNCTION GATE FIELD EFFECT TRANSISTOR DEV...

HIGH-FREQUENCY DRAIN-EXTENDED METAL-OXIDE-SEMICONDUCTOR (DEMOS) DEV...

LATERALLY DIFFUSED METAL OXIDE SEMICONDUCTOR (LDMOS) TRANSISTOR INT...

SEMICONDUCTOR DEVICE

TRANSISTOR STRUCTURE

HIGH VOLTAGE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

LATERAL DIFFUSED METAL OXIDE SEMICONDUCTOR DEVICE

Laterally-Diffused Metal-Oxide Semiconductor Devices with Reduced G...

SEMICONDUCTOR DEVICE WITH A HIGH K FIELD RELIEF DIELECTRIC STRUCTURE

Area Efficient Fin-Based Laterally-Diffused Metal-Oxide Semiconduct...

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

ETCHING METHOD FOR SEMICONDUCTOR STRUCTURE COMPRISING SUBSTRATE, FI...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR STRUCTURE AND METHOD FOR FABRICATING THE SAME

TRANSISTOR STRUCTURE

SEMICONDUCTOR DEVICE WITH NITROGEN DOPED FIELD RELIEF DIELECTRIC LAYER

SEMICONDUCTOR DEVICE CONFIGURED FOR GATE DIELECTRIC MONITORING

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE WITH GUARD RING ISOLATING POWER DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME

SEMICONDUCTOR DEVICE

LASER ANNEAL FORMED NANOSHEET LDMOS TRANSISTOR

GATE DRIVE CIRCUIT AND DRIVE METHOD FOR POWER SEMICONDUCTOR DEVICE

HIGH VOLTAGE DEVICE STRUCTURE AND METHODS OF FORMING THE SAME

METHODS OF CONTROLLING BREAKDOWN VOLTAGE IN MICROELECTRONIC DEVICES

METHOD TO IMPLANT P-TYPE AND/OR N-TYPE RINGS IN A SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME