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3893044
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Information
Patent Grant
3893044
References
Source
Patent Number
3,893,044
Date Filed
Not available
Date Issued
Tuesday, July 1, 1975
49 years ago
CPC
H01S5/227 - Buried mesa structure; Striped active layer
H01L33/00 - Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof Details thereof
H01S5/2275 - mesa created by etching
Y10S148/049 - Equivalence and options
Y10S148/051 - Etching
Y10S148/065 - Gp III-V generic compounds-processing
Y10S148/067 - Graded energy gap
Y10S148/072 - Heterojunctions
Y10S148/145 - Shaped junctions
Y10S148/169 - Vacuum deposition
US Classifications
372 - Coherent light generators
148 - Metal treatment
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