3909119

Information

• Patent Grant
• 3909119

• References
• Source

• Patent Number

  3,909,119

• Date Filed

  Not available

• Date Issued

  Tuesday, September 30, 1975
  49 years ago

• CPC

  • H01L29/861 - Diodes
  • H01L29/00 - Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier
  • H01L29/0626 - with a localised breakdown region
  • H01L29/0688 - characterised by the particular shape of a junction between semiconductor regions
  • H01L29/7322 - having emitter-base and base-collector junctions leaving at the same surface of the body
  • Y10S148/035 - Diffusion through a layer
  • Y10S148/049 - Equivalence and options
  • Y10S148/05 - Etch and refill
  • Y10S148/085 - Isolated-integrated
  • Y10S148/145 - Shaped junctions
  • Y10S257/913 - with means to absorb or localize unwanted impurities or defects from semiconductors

• US Classifications

  • 257 - Active solid-state devices
  • 148 - Metal treatment