3922710

Information

• Patent Grant
• 3922710

• References
• Source

• Patent Number

  3,922,710

• Date Filed

  Not available

• Date Issued

  Tuesday, November 25, 1975
  49 years ago

• CPC

  • H03K3/356008 - ensuring a predetermined initial state when the supply voltage has been applied; storing the actual state when the supply voltage fails
  • G11C16/0466 - comprising cells with charge storage in an insulating layer
  • H01L23/291 - Oxides or nitrides or carbides
  • H01L24/06 - of a plurality of bonding areas
  • H01L29/00 - Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier
  • H01L29/792 - with charge trapping gate insulator
  • H03K3/26 - by the use, as active elements, of bipolar transistors with internal or external positive feedback
  • H03K3/356 - Bistable circuits
  • H01L2924/12036 - PN diode
  • H01L2924/1306 - Field-effect transistor [FET]
  • Y10S148/114 - Nitrides of silicon

• US Classifications

  • 257 - Active solid-state devices
  • 148 - Metal treatment