3924265

Information

• Patent Grant
• 3924265

• References
• Source

• Patent Number

  3,924,265

• Date Filed

  Not available

• Date Issued

  Tuesday, December 2, 1975
  49 years ago

• CPC

  • H03K19/09441 - of the same canal type
  • H01L27/0738 - in combination with resistors only
  • H01L27/088 - the components being field-effect transistors with insulated gate
  • H01L29/00 - Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier
  • H01L29/4236 - within a trench
  • Y10S148/008 - Bi-level fabrication
  • Y10S148/049 - Equivalence and options
  • Y10S148/051 - Etching
  • Y10S148/053 - Field effect transistors fets
  • Y10S148/085 - Isolated-integrated
  • Y10S148/117 - Oxidation, selective

• US Classifications

  • 257 - Active solid-state devices
  • 148 - Metal treatment
  • 326 - Electronic digital logic circuitry
  • 438 - Semiconductor device manufacturing: process