within a trench

Industry

CPC
H01L29/4236

This industry / category may be too specific. Please go to a parent level for more data

Parent Industries

HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/4236within a trench

Industries

Please log in for detailed analytics

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and solid-state imaging sensor
- Patent number 12,243,884
- Issue date Mar 4, 2025
- SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Katsuhiko Fukasaku
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact-over-active-gate transistor structures with contacts landed...
- Patent number 12,243,923
- Issue date Mar 4, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Steven M. Shank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laterally diffused metal-oxide semiconductor (LDMOS) transistor wit...
- Patent number 12,243,939
- Issue date Mar 4, 2025
- Texas Instruments Incorporated
- Gang Xue
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned semiconductor device contacts having widths less than...
- Patent number 12,243,778
- Issue date Mar 4, 2025
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Mitsuru Soma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for producing same
- Patent number 12,237,374
- Issue date Feb 25, 2025
- mqSemi AG
- Munaf Rahimo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor arrangements with stacked trench contacts and gate straps
- Patent number 12,237,388
- Issue date Feb 25, 2025
- Intel Corporation
- Andy Chih-Hung Wei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical tunnel field-effect transistor with u-shaped gate and band...
- Patent number 12,237,376
- Issue date Feb 25, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Jiun-Yun Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming semiconductor device
- Patent number 12,237,400
- Issue date Feb 25, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Chieh-Wei Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including device isolation layer with multiple...
- Patent number 12,237,208
- Issue date Feb 25, 2025
- Samsung Electronics Co., Ltd.
- Hyunchul Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Protection structures for semiconductor devices with sensor arrange...
- Patent number 12,237,412
- Issue date Feb 25, 2025
- Wolfspeed, Inc.
- Edward Robert Van Brunt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device having increased forward biased safe operating area using so...
- Patent number 12,230,686
- Issue date Feb 18, 2025
- Infineon Technologies Americas Corp.
- Praveen Shenoy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 12,230,697
- Issue date Feb 18, 2025
- Hyundai Motor Company
- NackYong Joo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory devices and methods of manufacturing thereof
- Patent number 12,232,334
- Issue date Feb 18, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Meng-Han Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device with metal gate fill structure
- Patent number 12,230,503
- Issue date Feb 18, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Chung-Liang Cheng
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Radiation hardened high voltage superjunction MOSFET
- Patent number 12,230,674
- Issue date Feb 18, 2025
- IceMos Technology Limited
- Kiraneswar Muthuseenu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistors having a gate electrode positioned inside...
- Patent number 12,230,673
- Issue date Feb 18, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Michel Abou-Khalil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-passivated nitrogen-polar III-nitride transistor
- Patent number 12,230,702
- Issue date Feb 18, 2025
- HRL Laboratories, LLC
- Daniel Denninghoff
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device having a cell field and method of fabricating a g...
- Patent number 12,230,706
- Issue date Feb 18, 2025
- Infineon Technologies Austria AG
- Ingmar Neumann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench transistor
- Patent number 12,224,329
- Issue date Feb 11, 2025
- Robert Bosch GmbH
- Christian Tobias Banzhaf
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 12,224,341
- Issue date Feb 11, 2025
- Hyundai Motor Company
- NackYong Joo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of semiconductor device using gate-through imp...
- Patent number 12,224,211
- Issue date Feb 11, 2025
- SK keyfoundry Inc.
- Hee Hwan Ji
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 12,225,716
- Issue date Feb 11, 2025
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Qu Luo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power MOSFET with gate-source ESD diode structure
- Patent number 12,224,311
- Issue date Feb 11, 2025
- Diodes Incorporated
- Wan-Yu Kai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication method of buried wordline structure
- Patent number 12,224,323
- Issue date Feb 11, 2025
- CHANGXIN MEMORY TECHNOLOGIES, INC.
- Yong Lu
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor device
- Patent number 12,224,345
- Issue date Feb 11, 2025
- Kabushiki Kaisha Toshiba
- Kentaro Ichinoseki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having word line structure
- Patent number 12,224,328
- Issue date Feb 11, 2025
- NANYA TECHNOLOGY CORPORATION
- Cheng-Yan Ji
- G11 - INFORMATION STORAGE
Information Patent Grant
Wiring in diffusion breaks in an integrated circuit
- Patent number 12,218,135
- Issue date Feb 4, 2025
- Tokyo Electron Limited
- Lars Liebmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contacts for semiconductor devices and methods of forming the same
- Patent number 12,218,209
- Issue date Feb 4, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd
- Meng-Han Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,218,212
- Issue date Feb 4, 2025
- Samsung Electronics Co., Ltd.
- Doosan Back
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method
- Patent number 12,218,228
- Issue date Feb 4, 2025
- Fuji Electric Co., Ltd.
- Koh Yoshikawa
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE WITH RECESSED GATE AND METHOD FOR FABRICATING...
- Publication number 20250072090
- Publication date Feb 27, 2025
- NANYA TECHNOLOGY CORPORATION
- YING-CHENG CHUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250072023
- Publication date Feb 27, 2025
- Mitsubishi Electric Corporation
- Kazuya KONISHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES
- Publication number 20250072053
- Publication date Feb 27, 2025
- Samsung Electronics Co., Ltd.
- MYUNG GIL KANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH METAL LAYERS
- Publication number 20250070091
- Publication date Feb 27, 2025
- Monolithic 3D Inc.
- Zvi Or-Bach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE AND ASSOCIATED METHODS
- Publication number 20250072085
- Publication date Feb 27, 2025
- NEXPERIA B.V.
- Chih-Wei Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20250072094
- Publication date Feb 27, 2025
- SK HYNIX INC.
- Young Gwang YOON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH RECESSED GATE AND METHOD FOR FABRICATING...
- Publication number 20250072089
- Publication date Feb 27, 2025
- NANYA TECHNOLOGY CORPORATION
- YING-CHENG CHUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICES HAVING GATE TRENCHES WITH ASYMMETRICALL...
- Publication number 20250072044
- Publication date Feb 27, 2025
- Wolfspeed, Inc.
- Woongsun Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Wide Bandgap Trench Gate Semiconductor Device with Buried Gate
- Publication number 20250063800
- Publication date Feb 20, 2025
- Wolfspeed, Inc.
- Thomas Edgar Harrington
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250063752
- Publication date Feb 20, 2025
- Kabushiki Kaisha Toshiba
- Ikuo FUJIWARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250063794
- Publication date Feb 20, 2025
- Infineon Technologies Austria AG
- David Laforet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING BIT LINE
- Publication number 20250063725
- Publication date Feb 20, 2025
- Samsung Electronics Co., Ltd.
- Jongmin KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATED GATE BIPOLAR TRANSISTOR
- Publication number 20250056821
- Publication date Feb 13, 2025
- Ming-Chuan Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20250056868
- Publication date Feb 13, 2025
- United Microelectronics Corp.
- Ming-Hua Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE
- Publication number 20250056877
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing company Ltd.
- HUNG-SHU HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
- Publication number 20250054859
- Publication date Feb 13, 2025
- NANYA TECHNOLOGY CORPORATION
- YING-CHENG CHUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT INCLUDING SPACER STRUCTURE FOR TRANSISTORS
- Publication number 20250056867
- Publication date Feb 13, 2025
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Chia-Hao CHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WIDE BAND GAP SEMICONDUCTOR DEVICE
- Publication number 20250056869
- Publication date Feb 13, 2025
- INFINEON TECHNOLOGIES AG
- Fabian RASINGER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250048727
- Publication date Feb 6, 2025
- Samsung Electronics Co., Ltd.
- Changhun KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH MOSFET AND MANUFACTURING METHOD THEREOF
- Publication number 20250048673
- Publication date Feb 6, 2025
- Hangzhou Silicon-Magic Semiconductor Technology Co., Ltd.
- Jian Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ULTRA-SHORT CHANNEL LENGTHS IN SIC MOS-BASED POWER DEVICES AND METH...
- Publication number 20250048700
- Publication date Feb 6, 2025
- Purdue Research Foundation
- James Albert Cooper
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20250048699
- Publication date Feb 6, 2025
- Samsung Electronics Co., Ltd.
- Ki Hwan KIM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURE
- Publication number 20250048671
- Publication date Feb 6, 2025
- United Microelectronics Corp.
- Hsuan-Kai Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250048685
- Publication date Feb 6, 2025
- Rohm Co., Ltd.
- Yuji OSUMI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20250040222
- Publication date Jan 30, 2025
- RENESAS ELECTRONICS CORPORATION
- Yu NAGAHAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
- Publication number 20250040227
- Publication date Jan 30, 2025
- UNITED MICROELECTRONICS CORP.
- Kuan-Liang Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INSULATED TRENCH GATE WITH MULTIPLE LAYERS FORM IMPROVED PERFORMANC...
- Publication number 20250040229
- Publication date Jan 30, 2025
- Pakal Technologies, Inc.
- Paul Moore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20250040226
- Publication date Jan 30, 2025
- INSTITUTE OF MICORELECTRONICS, CHINESE ACADEMY OF SCIENCES
- Junjie LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF AND MEMORY S...
- Publication number 20250040125
- Publication date Jan 30, 2025
- Yangtze Memory Technologies Co., Ltd.
- Zhaoyun TANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOUBLE-CHANNEL HEMT DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20250040173
- Publication date Jan 30, 2025
- STMicroelectronics S.r.l.
- Ferdinando IUCOLANO
- H01 - BASIC ELECTRIC ELEMENTS

within a trench

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Semiconductor device and solid-state imaging sensor

Contact-over-active-gate transistor structures with contacts landed...

Laterally diffused metal-oxide semiconductor (LDMOS) transistor wit...

Self-aligned semiconductor device contacts having widths less than...

Semiconductor device and method for producing same

Transistor arrangements with stacked trench contacts and gate straps

Vertical tunnel field-effect transistor with u-shaped gate and band...

Method of forming semiconductor device

Semiconductor device including device isolation layer with multiple...

Protection structures for semiconductor devices with sensor arrange...

Device having increased forward biased safe operating area using so...

Semiconductor device and method of manufacturing the same

Semiconductor memory devices and methods of manufacturing thereof

Semiconductor device with metal gate fill structure

Radiation hardened high voltage superjunction MOSFET

Field-effect transistors having a gate electrode positioned inside...

Self-passivated nitrogen-polar III-nitride transistor

Transistor device having a cell field and method of fabricating a g...

Trench transistor

Semiconductor device and method of manufacturing the same

Manufacturing method of semiconductor device using gate-through imp...

Semiconductor device and manufacturing method thereof

Power MOSFET with gate-source ESD diode structure

Fabrication method of buried wordline structure

Semiconductor device

Semiconductor device having word line structure

Wiring in diffusion breaks in an integrated circuit

Contacts for semiconductor devices and methods of forming the same

Semiconductor device

Semiconductor device and manufacturing method

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE WITH RECESSED GATE AND METHOD FOR FABRICATING...

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICES

3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH METAL LAYERS

POWER SEMICONDUCTOR DEVICE AND ASSOCIATED METHODS

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE WITH RECESSED GATE AND METHOD FOR FABRICATING...

POWER SEMICONDUCTOR DEVICES HAVING GATE TRENCHES WITH ASYMMETRICALL...

Wide Bandgap Trench Gate Semiconductor Device with Buried Gate

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE INCLUDING BIT LINE

INSULATED GATE BIPOLAR TRANSISTOR

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

SEMICONDUCTOR STRUCTURE

SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

INTEGRATED CIRCUIT INCLUDING SPACER STRUCTURE FOR TRANSISTORS

WIDE BAND GAP SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

TRENCH MOSFET AND MANUFACTURING METHOD THEREOF

ULTRA-SHORT CHANNEL LENGTHS IN SIC MOS-BASED POWER DEVICES AND METH...

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

TRANSISTOR STRUCTURE

SEMICONDUCTOR DEVICE

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

INSULATED TRENCH GATE WITH MULTIPLE LAYERS FORM IMPROVED PERFORMANC...

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF AND MEMORY S...

DOUBLE-CHANNEL HEMT DEVICE AND MANUFACTURING METHOD THEREOF