Patent Application
20240329532
This non-provisional application claims priority under 35 U.S.C. § 119(a) on Patent Application No. 2023-043352 filed in Japan on Mar. 17, 2023, the entire contents of which are hereby incorporated by reference.
This invention relates to an acetal modifier, polymer, chemically amplified positive resist composition, and resist pattern forming process.
To meet the recent demand for higher integration in integrated circuits, pattern formation to a smaller feature size is required. Acid-catalyzed chemically amplified resist compositions are most often used in forming resist patterns with a feature size of 0.2 μm or less. High-energy radiation such as UV, deep-UV, EUV or EB is used as the energy source for exposure of these resist compositions. In particular, the EB lithography, which is utilized as the ultra-fine microfabrication technique, is also indispensable in processing a photomask blank into a photomask for use in the fabrication of semiconductor devices.
In general, the EB lithography is by writing an image with EB, without using a mask. In the case of positive resist, those regions of a resist film other than the regions to be retained are successively irradiated with EB having a minute area. In the case of negative resist, those regions of a resist film to be retained are successively irradiated with EB having a minute area. The operation of successively scanning all finely divided regions on the work surface takes a long time as compared with one-shot exposure through a photomask. To avoid any throughput decline, a resist film having a high sensitivity is required. One of the important applications of chemically amplified resist material resides in processing of photomask blanks. Some photomask blanks have a surface material that can have an impact on the pattern profile of the overlying chemically amplified resist film, for example, a layer of a chromium compound, typically chromium oxide deposited on a photomask substrate. For high resolution and profile retention after etching, it is one important performance factor to maintain the profile of a resist film pattern rectangular independent of the type of substrate. A small line edge roughness (LER) is another important performance factor. In recent years, the multibeam mask writing (MBMW) process is used in the processing of mask blanks to achieve further miniaturization. The resist used in the MBMW process is a low-sensitivity resist composition (or high-dose region) which is advantageous in roughness while a spotlight is brought to the optimization of the resist composition in the high-dose region.
Various improvements in the control of resist sensitivity and pattern profile have been made by a proper selection and combination of resist material components and processing conditions. One improvement pertains to the diffusion of acid that largely affects the resolution of a resist film. In the processing of photomasks, it is required that the profile of a resist pattern formed do not change with a lapse of time from the end of exposure to bake. The major cause of such a change of resist pattern profile with time is diffusion of an acid generated upon exposure. The problem of acid diffusion has been widely studied not only in terms of photomask processing, but also in terms of general resist compositions because the acid diffusion has a significant impact on sensitivity and resolution.
Patent Documents 1 and 2 describe acid generators capable of generating bulky acids for controlling acid diffusion and reducing LER. Since these acid generators are still insufficient to control acid diffusion, it is desired to have an acid generator with shorter acid diffusion.
Patent Document 3 discloses a resist composition comprising a base polymer having introduced therein repeat units having a sulfonium structure capable of generating a sulfonic acid upon light exposure. This approach of controlling acid diffusion by introducing repeat units capable of generating acid upon exposure into a base polymer is effective in forming a pattern with small LER. However, the base polymer having introduced therein repeat units capable of generating acid upon exposure sometimes encounters a problem with respect to its solubility in organic solvent, depending on the structure and proportion of the repeat units.
Polymers comprising a major proportion of aromatic structure having an acidic side chain, for example, polyhydroxystyrene are useful as a base polymer in resist materials for the KrF excimer laser lithography. These polymers are not used in resist materials for the ArF excimer laser lithography because they exhibit strong absorption to radiation of wavelength around 200 nm. These polymers, however, are expected to form useful resist materials for the EB and EUV lithography for forming patterns of smaller size than the processing limit of ArF excimer laser because they offer high etching resistance.
Often used as the base polymer in positive resist compositions for EB and EUV lithography is a polymer having an acidic functional group on phenol side chain masked with an acid labile group. Upon exposure to high-energy radiation, a photoacid generator generates an acid and the acid labile group is deprotected by the catalysis of the generated acid whereby the polymer turns soluble in alkaline developer. Typical of the acid labile group are tertiary alkyl and tert-butoxycarbonyl. Acetal groups are also used as an acid labile group requiring a relatively low level of activation energy. See Patent Documents 4 to 8.
The acetal group has the advantage that a resist film having a high sensitivity is obtainable. In the MBMW image writing process by the EB lithography for the fabrication of advanced photomasks of 10 nm node or less, images are written in thin-film regions where a resist film has a thickness of 100 nm or less and in high-dose regions having a high level of irradiation energy. If acetal has a high reactivity and a bulky structure, deprotection reaction can occur even in the unexposed region of the resist film and residues are left even in the exposed region. There arise such problems as degradations of resolution of isolated spaces and LER, which are regarded important for positive resist compositions, and formation of defects.
It is known that a develop loading phenomenon arises in the development step of the photomask fabrication process. That is, the finish size of pattern features differs between a grouped region and an isolated region on a photomask. Due to the develop loading, the distribution of pattern finish size becomes non-uniform depending on the surrounding pattern feature distribution. This is caused by a difference in elimination reaction during acid generation due to an energy difference of EB and a difference of dissolution rate in alkaline developer between grouped and isolated images. As one solution, Patent Document 9 discloses a beam dose computing method of an EB writing apparatus comprising the steps of adjusting an input dose in the EB writing apparatus so as to correct develop loading effects, and irradiating EB in the adjusted dose for thereby writing a pattern on a photomask. However, since the prior art correcting method has not fully taken into account the develop loading phenomenon for correction, the accuracy of correcting develop loading effects is not so high. To solve such problems, Patent Document 10 discloses an imaging method and Patent Document 11 discloses a method of improving a development mode after patterning. These methods are insufficient for establishing a uniform distribution of grouped and isolated features in the lithography of advanced generation. It is desired to improve a resist composition so as to achieve a high resolution and reductions of develop loading and residue defects in the lithography of advanced generation.
An object of the invention is to provide a chemically amplified positive resist composition which is lithographically processed into a resist pattern with a very high resolution of isolated spaces, reduced LER, improved rectangularity, and minimized influences of develop loading and residue defects, as well as etching resistance and restrained pattern collapse. More particularly, an object of the invention is to provide an acetal modifier; a polymer modified with the acetal modifier; a chemically amplified positive resist composition comprising the polymer; and a resist pattern forming process using the composition.
The inventors have found that when a resist composition comprises a base polymer having acid labile groups derived from an acetal modifier of specific structure, a resist pattern with satisfactory isolated-space resolution, pattern profile and LER is formed even in high-dose regions while controlling the influences of develop loading and residue defects.
In one aspect, the invention provides an acetal modifier providing a triple bond-bearing group serving as a protective group for an aliphatic or aromatic hydroxy group.
The acetal modifier preferably provides a group serving as a protective group for an aromatic hydroxy group.
The acetal modifier is preferably a compound having the formula (AC-1) or (AC-2).
Herein RL1, RL2, RL6, RL7 and RL8 are each independently hydrogen or a C1-C15 hydrocarbyl group, RL1 and RL2 may bond together to form a ring with the carbon atom to which they are attached, and any two of RL6 to RL8 may bond together to form a ring with the carbon atom to which they are attached,
In another aspect, the invention provides a polymer adapted to turn alkali soluble as a result of deprotection under the action of acid, the polymer comprising repeat units A1 having on side chain a structure including an aromatic hydroxy group protected with an acid labile group having the formula (AL-1) or (AL-2).
Herein RL1 to RL11, m1 and m2 are as defined above, and the broken line designates a point of attachment to the oxygen atom of the aromatic hydroxy group.
In a preferred embodiment, the repeat unit A1 has the formula (A1).
Herein a1 is 0 or 1, a2 is an integer of 0 to 4 in case of a1=0, and an integer of 0 to 6 in case of a1=1, a3 is an integer of 1 to 3, with the proviso that a2+a3 is from 1 to 5 in case of a1=0 and a2+a3 is from 1 to 7 in case of a1=1,
In a preferred embodiment, the polymer further comprises phenolic hydroxy group-bearing repeat units A2 having the formula (A2).
Herein b1 is 0 or 1, b2 is an integer of 0 to 4 in case of b1=0, and an integer of 0 to 6 in case of b1=1, b3 is an integer of 1 to 3, with the proviso that b2+b3 is from 1 to 5 in case of b1=0 and b2+b3 is from 1 to 7 in case of b1=1,
In a preferred embodiment, repeat unit A2 has the formula (A2-1):
In a preferred embodiment, the polymer further comprises repeat units of at least one type selected from repeat units having the formula (A3-1) and repeat units having the formula (A3-2).
Herein c1 is 0 or 1, c2 is an integer of 0 to 2, c3 is an integer satisfying 0≤c3≤5+2(c2)-c4, c4 is an integer of 1 to 3, c5 is 0 or 1,
In a preferred embodiment, the polymer further comprises repeat units of at least one type selected from repeat units having the formula (B1), repeat units having the formula (B2), and repeat units having the formula (B3).
Herein e and f are each independently an integer of 0 to 4, g1 is an integer of 0 to 5, g2 is an integer of 0 to 2,
In a preferred embodiment, the polymer further comprises repeat units of at least one type selected from repeat units having the formulae (C1) to (C8).
Herein RA is each independently hydrogen, fluorine, methyl or trifluoromethyl,
In a further aspect, the invention provides a chemically amplified positive resist composition comprising the polymer defined herein.
The resist composition may further comprise an organic solvent.
The resist composition may further comprise a photoacid generator capable of generating an acid having an acid strength (pKa) of −2.0 or larger.
The preferred photoacid generator contains an anion having the formula (P1).
Herein m1 is 0 or 1, p is an integer of 1 to 3, q is an integer of 1 to 5, r is an integer of 0 to 3,
The resist composition may further comprise a quencher.
The resist composition may further comprise a fluorinated polymer comprising repeat units of at least one type selected from repeat units having the formula (D1), repeat units having the formula (D2), repeat units having the formula (D3), and repeat units having the formula (D4).
Herein RB is each independently hydrogen, fluorine, methyl or trifluoromethyl,
In a preferred embodiment, the fluorinated polymer further comprises repeat units of at least one type selected from repeat units having the formula (D5) and repeat units having the formula (D6).
Herein RC is each independently hydrogen or methyl,
In a preferred embodiment, the polymer has a dissolution rate in alkaline developer of up to 10 nm/min.
In a preferred embodiment, the resist composition forms a resist film, the resist film in an unexposed region having a dissolution rate in alkaline developer of up to 10 nm/min.
In a preferred embodiment, the resist composition forms a resist film, the resist film in an exposed region having a dissolution rate in alkaline developer of at least 50 nm/sec.
In a still further aspect, the invention provides a resist pattern forming process comprising the steps of:
Typically, the high-energy radiation is KrF excimer laser, ArF excimer laser, EB or EUV of wavelength 3 to 15 nm.
In a preferred embodiment, the substrate has the outermost surface of a material containing at least one element selected from chromium, silicon, tantalum, molybdenum, cobalt, nickel, tungsten, and tin.
In a preferred embodiment, the substrate is a mask blank of transmission or reflection type.
Also contemplated herein is a mask blank of transmission or reflection type which is coated with the chemically amplified positive resist composition defined herein.
The chemically amplified positive resist composition comprising a polymer modified with an acetal modifier can be processed to form a resist pattern of good profile with a high resolution, reduced LER, and improved rectangularity while controlling the influence of residue defects. It is thus suited as a resist composition for forming a resist film which is sensitive to EB and useful in the processing of semiconductor substrates and photomask blanks. The pattern forming process using the positive resist composition can form a resist pattern with a high resolution, reduced LER, etch resistance, and minimized influence of residue defects and is thus best suited in the micropatterning technology, typically EUV or EB lithography.
As used herein, the singular forms “a,” “an” and “the” include plural referents unless the context clearly dictates otherwise. “Optional” or “optionally” means that the subsequently described event or circumstances may or may not occur, and that description includes instances where the event or circumstance occurs and instances where it does not. The notation (Cn-Cm) means a group containing from n to m carbon atoms per group. In chemical formulae, Me stands for methyl, Ac stands for acetyl, and the broken line (---) or asterisk (*) designates a valence bond or point of attachment. As used herein, the term “fluorinated” refers to a fluorine-substituted or fluorine-containing compound or group. The terms “group” and “moiety” are interchangeable.
The abbreviations and acronyms have the following meaning.
It is understood that for some structures represented by chemical formulae, there can exist enantiomers and diastereomers because of the presence of asymmetric carbon atoms. In such a case, a single formula collectively represents all such isomers. The isomers may be used alone or in admixture.
One embodiment of the invention is an acetal modifier providing a triple bond-bearing group which serves as a protective group for an aliphatic or aromatic hydroxy group.
The preferred acetal modifier has the formula (AC-1) or (AC-2).
In formulae (AC-1) and (AC-2), RL1, RL2, RL6, RL7 and RL8 are each independently hydrogen or a C1-C15 hydrocarbyl group. The hydrocarbyl group may be saturated or unsaturated and straight, branched or cyclic. Examples thereof include, but are not limited to, C1-C15 alkyl groups such as methyl, ethyl, n-propyl, isopropyl, n-butyl, and tert-butyl, C3-C15 cyclic saturated hydrocarbyl groups such as cyclopropyl, cyclopentyl, cyclohexyl, and cyclopropylmethyl; C2-C15 alkenyl groups such as vinyl, allyl, propenyl, butenyl and hexenyl; and C3-C15 cyclic unsaturated hydrocarbyl groups such as cyclohexenyl.
RL1 and RL2 may bond together to form a ring with the carbon atom to which they are attached. Any two of RL6 to RL8 may bond together to form a ring with the carbon atom to which they are attached. Exemplary rings include cyclopropane, cyclobutane, cyclopentane, cyclohexane, norbornane, and adamantane rings.
RL1, RL2, RL6, RL7 and RL8 are properly selected depending on the design of sensitivity of acid decomposable group. For example, if the decomposable group is designed so as to be decomposed with strong acid while ensuring relatively high stability, then hydrogen is selected. If the decomposable group is designed to have a high sensitivity relative to pH changes by utilizing a relatively high reactivity and to restrain residue defects, then a straight alkyl group is selected. Specific examples of RL1, RL2, RL6, RL7 and RL8 include methyl, ethyl, propyl and isopropyl, with methyl being preferred in view of an optimum acid-elimination ability.
In the acetal modifier having formula (AC-2), the carbon atom to which RL6, RL7 and RL8 are attached is preferably a secondary carbon atom in view of the stability and reactivity with acid of a polymer.
In formulae (AC-1) and (AC-2), RL3, RL1, RL9 and RL10 are each independently hydrogen or a C1-C20 hydrocarbyl group which may contain a heteroatom. The hydrocarbyl group may be saturated or unsaturated and straight, branched or cyclic. Examples thereof are as exemplified above for the hydrocarbyl group represented by RL1, RL2, RL6, RL7 and RL8.
RL3 and RL4 may bond together to form a ring with the carbon atom to which they are attached. RL9 and RL10 may bond together to form a ring with the carbon atom to which they are attached. Examples of the ring are as exemplified for the ring that RL1 and RL2, taken together, form with the carbon atom to which they are attached.
In formulae (AC-1) and (AC-2), RL5 and RL 1 are each independently hydrogen or a C1-C15 hydrocarbyl group. The hydrocarbyl group may be saturated or unsaturated and straight, branched or cyclic. Examples thereof are as exemplified above for the hydrocarbyl group represented by RL1, RL2, RL6, RL7 and RL8.
In formula (AC-2), X is chlorine, bromine or iodine, with chlorine being preferred from the aspect of synthesis.
In formulae (AC-1) and (AC-2), m1 and m2 are each independently an integer of 1 to 3. Preferably each of m1 and m2 is 1 or 2, most preferably 1.
Examples of the acetal modifier having formula (AC-1) are shown below, but not limited thereto.
Examples of the acetal modifier having formula (AC-2) are shown below, but not limited thereto.
Another embodiment of the invention is a polymer adapted to turn alkali soluble as a result of deprotection under the action of acid, the polymer comprising repeat units A1 having on side chain a structure including an aromatic hydroxy group protected with an acid labile group having the formula (AL-1) or (AL-2).
Herein RL1 to RL11, m1, and m2 are as defined above. The broken line designates a point of attachment to the oxygen atom of the aromatic hydroxy group.
The repeat unit A1 preferably has the formula (A1).
In formula (A1), a1 is 0 or 1, a2 is an integer of 0 to 4 in case of a1=0, and an integer of 0 to 6 in case of a1=1, a3 is an integer of 1 to 3, with the proviso that a2+a3 is from 1 to 5 in case of a1=0 and a2+a3 is from 1 to 7 in case of a1=1.
In formula (A1), RA is hydrogen, fluorine, methyl or trifluoromethyl.
In formula (A1), X1 is a single bond, *—C(═O)—O— or *—C(═O)—NH—, wherein * designates a point of attachment to the carbon atom in the backbone.
In formula (A1), X2 is a single bond, ether bond, ester bond, carbonyl group, sulfonic ester bond, carbonate bond or carbamate bond. Inter alia, a single bond, ether bond or ester bond is preferred, with a single bond or ester bond being more preferred.
In formula (A1), A1 is a single bond or a C1-C10 saturated hydrocarbylene group. In the saturated hydrocarbylene group, some constituent —CH2— may be replaced by —O—. The saturated hydrocarbylene group may be straight, branched or cyclic. Examples thereof include C1-C10 alkanediyl groups such as methanediyl, ethane-1,2-diyl, propane-1,3-diyl, butane-1,4-diyl, pentane-1,5-diyl, hexane-1,6-diyl, and structural isomers thereof; C3-C10 cyclic saturated hydrocarbylene groups such as cyclopropanediyl, cyclobutanediyl, cyclopentanediyl, and cyclohexanediyl; and combinations thereof.
In formula (A1), R1 is halogen or a C1-C20 hydrocarbyl group which may contain a heteroatom. The hydrocarbyl group may be saturated or unsaturated and straight, branched or cyclic. Examples thereof include C1-C20 alkyl groups such as methyl, ethyl, n-propyl, isopropyl, n-butyl, and tert-butyl; C3-C20 cyclic saturated hydrocarbyl groups such as cyclopropyl, cyclopentyl, cyclohexyl, cyclopropylmethyl, 4-methylcyclohexyl, cyclohexylmethyl, norbornyl and adamantyl; C2-C20 alkenyl groups such as vinyl, allyl, propenyl, butenyl, and hexenyl; C3-C20 cyclic unsaturated hydrocarbyl groups such as cyclohexenyl; C6-C20 aryl groups such as phenyl and naphthyl; C7-C20 aralkyl groups such as benzyl, 1-phenylethyl, and 2-phenylethyl, and combinations thereof. Of these, aryl groups are preferred. In the hydrocarbyl group, some or all of the hydrogen atoms may be substituted by a moiety containing a heteroatom such as oxygen, sulfur, nitrogen or halogen, and some constituent —CH2— may be replaced by a moiety containing a heteroatom such as oxygen, sulfur or nitrogen, so that the group may contain a hydroxy moiety, cyano moiety, fluorine, chlorine, bromine, iodine, carbonyl moiety, ether bond, ester bond, sulfonic ester bond, carbonate bond, lactone ring, sultone ring, carboxylic anhydride (—C(═O)—O—C(═O)—) or haloalkyl moiety.
In formula (A1), R is an acid labile group having formula (AL-1) or (AL-2).
Examples of repeat unit A1 are shown below, but not limited thereto. Herein R is as defined above.
The content of repeat units A1 is preferably 10 to 40 mol %, more preferably 10 to 35 mol %, even more preferably 20 to 30 mol % based on the overall repeat units of the polymer. The repeat units A1 used herein may be of one type or a mixture of two or more types.
In a preferred embodiment, the polymer further comprises phenolic hydroxy group-containing repeat units A2 having the formula (A2).
In formula (A2), b1 is 0 or 1, b2 is an integer of 0 to 4 in case of b1=O, and an integer of 0 to 6 in case of b1=1, and b3 is an integer of 1 to 3, with the proviso that b2+b3 is from 1 to 5 in case of b1=0 and b2+b3 is from 1 to 7 in case of b1=1.
In formula (A2), RA is hydrogen, fluorine, methyl or trifluoromethyl.
In formula (A2), X3 is a single bond, *—C(═O)—O— or *—C(═O)—NH—, wherein * designates a point of attachment to the carbon atom in the backbone.
In formula (A2), X4 is a single bond, ether bond, ester bond, carbonyl group, sulfonic ester bond, carbonate bond or carbamate bond. Inter alia, a single bond, ether bond or ester bond is preferred, with a single bond or ester bond being more preferred.
In formula (A2), A2 is a single bond or a C1-C10 saturated hydrocarbylene group in which some constituent —CH2— may be replaced by —O—. The saturated hydrocarbylene group may be straight, branched or cyclic and examples thereof are as exemplified above for the saturated hydrocarbylene group A1.
In formula (A2), R2 is halogen or a C1-C20 hydrocarbyl group which may contain a heteroatom. The hydrocarbyl group may be saturated or unsaturated and straight, branched or cyclic and examples thereof are as exemplified above for the hydrocarbyl group R1.
Preferred examples of repeat unit A2 wherein all X3, X4 and A2 are a single bond include units derived from 3-hydroxystyrene, 4-hydroxystyrene, 5-hydroxy-2-vinylnaphthalene, and 6-hydroxy-2-vinylnaphthalene. Of these, repeat units having the following formula (A2-1) are more preferred.
Herein RA and b3 are as defined above.
Preferred examples of repeat unit A2 wherein X3 is other than a single bond include the above-mentioned examples of repeat unit A1 wherein R is replaced by hydrogen, but are not limited thereto.
When the polymer contains repeat units A2, the content of repeat units A2 is preferably 30 to 90 mol %, more preferably 40 to 85 mol % based on the overall repeat units of the polymer. In an embodiment wherein the polymer contains repeat units having formula (B1) and/or repeat units having formula (B2) which provide the polymer with higher etching resistance, and repeat units B1 and/or B2 contain a phenolic hydroxy group as the substituent, preferably the content of repeat units A2 plus repeat units B1 and/or B2 falls in the range. The repeat units A2 used herein may be of one type or a mixture of two or more types.
The polymer may further comprise repeat units of at least one type selected from repeat units having the formula (A3-1) and repeat units having the formula (A3-2). These units are also referred to as repeat units A3-1 and A3-2.
In formula (A3-1), c1 is 0 or 1. The subscript c2 is an integer of 0 to 2, and the structure represents a benzene skeleton when c2=0, a naphthalene skeleton when c2=1, and an anthracene skeleton when c2=2. The subscript c3 is an integer satisfying 0≤c3≤5+2(c2)-c4; c4 is an integer of 1 to 3; and c5 is 0 or 1. In case of c2=0, preferably c3 is an integer of 0 to 3 and c4 is an integer of 1 to 3. In case of c2=1 or 2, preferably c3 is an integer of 0 to 4 and c4 is an integer of 1 to 3.
In formula (A3-2), d1 is an integer of 0 to 2, d2 is an integer of 0 to 2, d3 is an integer of 0 to 5, and d4 is an integer of 0 to 2.
In formulae (A3-1) and (A3-2), RA is each independently hydrogen, fluorine, methyl or trifluoromethyl.
In formula (A3-1), A3 is a single bond or a C1-C10 saturated hydrocarbylene group. In the saturated hydrocarbylene group, some constituent —CH2— may be replaced by —O—. The saturated hydrocarbylene group may be straight, branched or cyclic. Examples thereof include alkanediyl groups such as methylene, ethane-1,2-diyl, propane-1,3-diyl, butane-1,4-diyl, pentane-1,5-diyl, hexane-1,6-diyl, and structural isomers thereof; cyclic saturated hydrocarbylene groups such as cyclopropanediyl, cyclobutanediyl, cyclopentanediyl, and cyclohexanediyl; and combinations thereof. For the saturated hydrocarbylene group containing an ether bond, when c1=1 in formula (A3-1), the ether bond may be incorporated at any position excluding the position between the α-carbon and β-carbon relative to the ester oxygen atom; and when c1=0 in formula (A3-1), the atom that bonds with the backbone becomes an ethereal oxygen atom, and a second ether bond may be incorporated at any position excluding the position between the α-carbon and β-carbon relative to the ethereal oxygen atom. Saturated hydrocarbylene groups having no more than 10 carbon atoms are desirable because of a sufficient solubility in alkaline developer.
In formula (A3-2), A4 is a single bond, phenylene group, naphthylene group or *—C(═O)—O-A41-A41 is a C1-C20 aliphatic hydrocarbylene group which may contain hydroxy, ether bond, ester bond or lactone ring, or a phenylene group or naphthylene group, and * designates a point of attachment to the carbon atom in the backbone.
In formula (A3-1), R3 is halogen, an optionally halogenated C1-C6 saturated hydrocarbyl group, optionally halogenated C1-C6 saturated hydrocarbyloxy group, or optionally halogenated C2-C8 saturated hydrocarbylcarbonyloxy group. The saturated hydrocarbyl group and saturated hydrocarbyl moiety in the saturated hydrocarbyloxy group and saturated hydrocarbylcarbonyloxy group may be straight, branched or cyclic. Examples thereof include C1-C6 alkyl groups such as methyl, ethyl, propyl, isopropyl, butyl, pentyl, and hexyl; C3-C6 cycloalkyl groups such as cyclopropyl, cyclobutyl, cyclopentyl, and cyclohexyl, and combinations thereof. A carbon count below the upper limit ensures a satisfactory solubility in alkaline developer. When c3 is 2 or more, a plurality of R3 may be the same or different.
In formula (A3-2), R4 and R5 are each independently a C1-C10 hydrocarbyl group which may contain a heteroatom. R4 and R5 may bond together to form a ring with the carbon atom to which they are attached.
In formula (A3-2), R6 is each independently fluorine or a C1-C5 fluorinated alkyl group or C1-C5 fluorinated alkoxy group.
In formula (A3-2), R7 is each independently a C1-C10 hydrocarbyl group which may contain a heteroatom.
In formula (A3-1), XA is an acid labile group when c4=1, and hydrogen or an acid labile group, at least one XA being an acid labile group, when c4=2 or 3. That is, repeat units A3-1 have phenolic hydroxy groups bonded to an aromatic ring, at least one of which is protected with an acid labile group, or repeat units A3-1 have a carboxy group bonded to an aromatic ring, which is protected with an acid labile group. The acid labile group used herein is not particularly limited as long as it is commonly used in a number of well-known chemically amplified positive resist compositions and eliminated under the action of acid to release an acidic group.
A choice of a tertiary saturated hydrocarbyl group as the acid labile group is preferred for the reason that even when a resist film is formed to a thickness of 10 to 100 nm and processed to form a fine pattern having a line width of up to 45 nm, the pattern has reduced LER. Of the tertiary saturated hydrocarbyl groups, tertiary alkyl groups of 4 to 18 carbon atoms are preferred because the corresponding monomer for use in polymerization is available through distillation. The group attached to the tertiary carbon atom in the tertiary saturated hydrocarbyl group is typically a C1-C15 saturated hydrocarbyl group which may contain an oxygen-containing functional group such as ether bond or carbonyl group. The groups attached to the tertiary carbon atom may bond together to form a ring.
Examples of the group bonded to the tertiary carbon atom include methyl, ethyl, propyl, adamantyl, norbornyl, tetrahydrofuran-2-yl, 7-oxanorbornan-2-yl, cyclopentyl, 2-tetrahydrofuryl, tricyclo[5.2.1.02,6]decyl, tetracyclo[4.4.0.12,5. 17,10]dodecyl, and 3-oxo-1-cyclohexyl.
Examples of the tertiary saturated hydrocarbyl group having such a substituent include, but are not limited to, tert-butyl, tert-pentyl, 1-ethyl-1-methylpropyl, 1,1-diethylpropyl, 1,1,2-trimethylpropyl, 1-adamantyl-1-methylethyl, 1-methyl-1-(2-norbornyl)ethyl, 1-methyl-1-(tetrahydrofuran-2-yl)ethyl, 1-methyl-1-(7-oxanorbornan-2-yl)ethyl, 1-methylcyclopentyl, 1-ethylcyclopentyl, 1-propylcyclopentyl, 1-isopropylcyclopentyl, 1-cyclopentylcyclopentyl, 1-cyclohexylcyclopentyl, 1-(2-tetrahydrofuryl)cyclopentyl, 1-(7-oxanorbornan-2-yl)cyclopentyl, 1-methylcyclohexyl, 1-ethylcyclohexyl, 1-cyclopentylcyclohexyl, 1-cyclohexylcyclohexyl, 2-methyl-2-norbornyl, 2-ethyl-2-norbornyl, 8-methyl-8-tricyclo[5.2.1.02,6]decyl, 8-ethyl-8-tricyclo[5.2.1.02,6]decyl, 3-methyl-3-tetracyclo[4.4.0.12,5.17,10]dodecyl, 3-ethyl-3-tetracyclo[4.4.0.12,5.17,10]dodecyl, 2-methyl-2-adamantyl, 2-ethyl-2-adamantyl, 1-methyl-3-oxo-1-cyclohexyl, 1-methyl-1-(tetrahydrofuran-2-yl)ethyl, 5-hydroxy-2-methyl-2-adamantyl, and 5-hydroxy-2-ethyl-2-adamantyl.
A group having the following formula (A3-1-1) is also suitable as the acid labile group. The group having formula (A3-1-1) is often used as the acid labile group. It is a good choice of the acid labile group that ensures to form a pattern having a relatively rectangular pattern-substrate interface in a consistent manner. An acetal structure is formed when X is a group having formula (A3-1-1).
In formula (A3-1-1), RL1 is hydrogen or a C1-C10 saturated hydrocarbyl group. RL2 is a C1-C30 saturated hydrocarbyl group. The saturated hydrocarbyl group may be straight, branched or cyclic.
A choice of RL1 may depend on the designed sensitivity of acid decomposable group. For example, hydrogen is selected when the acid decomposable group is designed to ensure relatively high stability and to be decomposed with strong acid. A straight alkyl group is selected when the acid decomposable group is designed to have relatively high reactivity and high sensitivity to pH changes. Although the choice varies with a particular combination of acid generator and basic compound in the resist composition, RL1 is preferably a group in which the carbon in bond with acetal carbon is secondary, when RL2 is a relatively large alkyl group substituted at the end and the acid decomposable group is designed to undergo a substantial change of solubility by decomposition. Examples of RL1 bonded to acetal carbon via secondary carbon include isopropyl, sec-butyl, cyclopentyl, and cyclohexyl.
In the acetal group, R12 is preferably a C7-C30 polycyclic alkyl group for acquiring a higher resolution. When RL2 is a polycyclic alkyl group, a bond is preferably formed between secondary carbon on the polycyclic structure and acetal oxygen. The acetal oxygen bonded to secondary carbon on the cyclic structure, as compared with the acetal oxygen bonded to tertiary carbon on the cyclic structure, ensures that a corresponding polymer becomes a stable compound, suggesting that the resist composition has better shelf stability and is not degraded in resolution. Said acetal oxygen, as compared with RL2 bonded to primary carbon via a straight alkyl group of at least one carbon atom, ensures that a corresponding polymer has a higher glass transition temperature (Tg), suggesting that a resist pattern after development is not deformed by bake.
Preferred examples of the group having formula (A3-1-1) are given below, but not limited thereto. Herein RL1 is as defined above.
Preferred examples of repeat unit A3-2 are given below, but not limited thereto. Herein RA is as defined above.
Another choice of acid labile group which can be used herein is a phenolic hydroxy group whose hydrogen is substituted by a tertiary saturated hydrocarbyl moiety: —CH2COO—. Examples of the tertiary saturated hydrocarbyl moiety are as exemplified above for the tertiary saturated hydrocarbyl group used for the protection of phenolic hydroxy group.
Repeat units of at least one type selected from repeat units A3-1 and A3-2 are preferably incorporated in a range of 2 to 40 mol % of the overall repeat units of the polymer. The sum of repeat units A1, A3-1 and A3-2 is preferably incorporated in a range of 10 to 60 mol %, more preferably 10 to 50 mol %, even more preferably 10 to 40 mol % of the overall repeat units of the polymer. The repeat units A3-1 and A3-2 may be of one type or a mixture of two or more types.
The polymer may further comprise repeat units of at least one type selected from repeat units having the formula (B1), repeat units having the formula (B2), and repeat units having the formula (B3). These units are also referred to as repeat units B1, B2, and B3.
In formulae (B1) and (B2), e and f are each independently an integer of 0 to 4.
In formula (B3), RA is hydrogen, fluorine, methyl or trifluoromethyl, g1 is an integer of 0 to 5, and g2 is an integer of 0 to 2.
In formula (B3), X5 is a single bond, *—C(═O)—O— or *—C(═O)—NH—, wherein * designates a point of attachment to the carbon atom in the backbone.
In formula (B3), A5 is a single bond or a C1-C10 saturated hydrocarbylene group. In the saturated hydrocarbylene group, some constituent —CH2— may be replaced by —O—. The saturated hydrocarbylene group may be straight, branched or cyclic and examples thereof are as exemplified above for A1 in formula (A1).
In formulae (B1) and (B2), R11 and R12 are each independently a hydroxy group, halogen, an optionally halogenated C2-C8 saturated hydrocarbylcarbonyloxy group, optionally halogenated C1-C8 saturated hydrocarbyl group, or optionally halogenated C1-C8 saturated hydrocarbyloxy group. The saturated hydrocarbylcarbonyloxy group, saturated hydrocarbyl group, and saturated hydrocarbyloxy group may be straight, branched or cyclic. When e is 2 or more, a plurality of R11 may be the same or different. When f is 2 or more, a plurality of R12 may be the same or different.
In formula (B3), R13 is an acetyl group, C1-C20 saturated hydrocarbyl group, C1-C20 saturated hydrocarbyloxy group, C2-C20 saturated hydrocarbylcarbonyloxy group, C2-C20 saturated hydrocarbyloxyhydrocarbyl group, C2-C20 saturated hydrocarbylthiohydrocarbyl group, halogen, nitro group or cyano group. R13 may also be a hydroxy group in case of g2=1 or 2. The saturated hydrocarbyl group, saturated hydrocarbyloxy group, saturated hydrocarbylcarbonyloxy group, saturated hydrocarbyloxyhydrocarbyl group and saturated hydrocarbylthiohydrocarbyl group may be straight, branched or cyclic. When g1 is 2 or more, a plurality of R13 may be the same or different.
When repeat units of at least one type selected from repeat units B1 to B3 are incorporated, better performance is obtained because not only the aromatic ring possesses etch resistance, but the cyclic structure incorporated into the main chain also exerts the effect of improving resistance to etching and EB irradiation during pattern inspection step.
The repeat units B1 to B3 are preferably incorporated in a range of at least 5 mol % based on the overall repeat units of the polymer for obtaining the effect of improving etch resistance. Also, the repeat units B1 to B3 are preferably incorporated in a range of up to 25 mol %, more preferably up to 20 mol % based on the overall repeat units of the polymer. When the relevant units are free of functional groups or have a functional group other than hydroxy, their content of up to 25 mol % is preferred because the risk of forming development defects is eliminated. Each of the repeat units B1 to B3 may be of one type or a combination of plural types.
The total content of repeat units A2 and repeat units of at least one type selected from repeat units B1 to B3 is preferably at least 50 mol %, more preferably at least 60 mol % based on the overall repeat units of the polymer.
The polymer may further comprise (meth)acrylate units protected with an acid labile group and/or (meth)acrylate units having an adhesive group such as a lactone structure or a hydroxy group other than phenolic hydroxy, as commonly used in the art. These repeat units are effective for fine adjustment of properties of a resist film, but not essential.
Examples of the (meth)acrylate unit having an adhesive group include repeat units having the following formula (B4), repeat units having the following formula (B5), and repeat units having the following formula (B6), which are also referred to as repeat units B4, B5, and B6, respectively. While these units do not exhibit acidity, they may be used as auxiliary units for providing adhesion to substrates or adjusting solubility.
In formulae (B4) to (B6), RA is each independently hydrogen, fluorine, methyl or trifluoromethyl. R14 is —O— or methylene. R15 is hydrogen or hydroxy. R16 is a C1-C4 saturated hydrocarbyl group, and h is an integer of 0 to 3.
When the repeat units B4 to B6 are included, their content is preferably 0 to 20 mol %, more preferably 0 to 10 mol % based on the overall repeat units of the polymer. Each of the repeat units B4 to B6 may be of one type or a combination of plural types.
The polymer may further comprise repeat units of at least one type selected from repeat units having the formula (C1), repeat units having the formula (C2), repeat units having the formula (C3), repeat units having the formula (C4), repeat units having the formula (C5), repeat units having the formula (C6), repeat units having the formula (C7), repeat units having the formula (C8), which are also referred to as repeat units C1, C2, C3, C4, C5, C6, C7 and C8, respectively.
In formulae (C1) to (C8), RA is each independently hydrogen, fluorine, methyl or trifluoromethyl. Y1 is a single bond, a C1-C6 aliphatic hydrocarbylene group, phenylene group, naphthylene group or C7-C18 group obtained by combining the foregoing, *—O—Y11—, *—C(═O)—O—Y11—, or *—C(═O)—NH—Y11—. Y11 is a C1-C6 aliphatic hydrocarbylene group, phenylene group, naphthylene group or C7-C15 group obtained by combining the foregoing, which may contain a carbonyl moiety, ester bond, ether bond or hydroxy moiety. Y2 is a single bond or **—Y21—C(═O)—O—. Y21 is a C1-C20 hydrocarbylene group which may contain a heteroatom. Y3 is a single bond, methylene, ethylene, phenylene, fluorinated phenylene, trifluoromethyl-substituted phenylene, *—O—Y31—, *—C(═O)—O—Y31—, or *—C(═O)—NH—Y3. Y31 is a C1-C6 aliphatic hydrocarbylene group, phenylene group, fluorinated phenylene group, trifluoromethyl-substituted phenylene group, or C7-C20 group obtained by combining the foregoing, which may contain a carbonyl moiety, ester bond, ether bond or hydroxy moiety. The asterisk (*) designates a point of attachment to the carbon atom in the backbone, and the double asterisk (**) designates a point of attachment to the oxygen atom in the formula. Y4 is a single bond or C1-C30 hydrocarbylene group which may contain a heteroatom. The subscripts k1 and k2 are each independently 0 or 1, k1 and k2 are 0 when Y4 is a single bond.
The repeat unit C4 or C8 is a unit which generates an acid upon exposure to high-energy radiation (e.g., UV, deep-UV, EB, EUV, X-ray, α-ray, or synchrotron radiation), the acid having a sulfonyl group and being difluoromethylated at β-position thereof. The acid has an acid strength adequate for the deprotection of a polymer comprising repeat units A2. When a polymer comprising repeat units C4 or C8 is used as a base polymer in a resist composition, it is possible to properly control the movement and diffusion of the generated acid.
A photoacid generator capable of generating an arene sulfonic acid upon exposure to high-energy radiation is also commonly used for the deprotection of a polymer comprising units protected with an acetal, tertiary alkyl or tert-butoxycarbonyl group. However, when an arene sulfonic acid-generating unit is introduced as the repeat unit in a base polymer with the intention of attaining the same effect as in the present invention, the resulting base polymer is not always dissolvable in a solvent because of low solvent solubility. In contrast, the polymer comprising repeat units C4 or C8 is fully lipophilic and easy to prepare and handle, and a resist composition is readily prepared therefrom.
In formulae (C2) and (C6), Y2 is a single bond or —Y21—C(═O)—O— wherein Y21 is a C1-C20 hydrocarbylene group which may contain a heteroatom. Examples of the hydrocarbylene group Y21 are given below, but not limited thereto.
In formulae (C2) and (C6), RHF is hydrogen or trifluoromethyl. Examples of the repeat units C2 and C6 wherein RHF is hydrogen are as exemplified in U.S. Pat. No. 8,105,748 (JP-A 2010-116550). Examples of the repeat units C2 and C6 wherein RHF is trifluoromethyl are as exemplified in U.S. Pat. No. 8,057,985 (JP-A 2010-077404). Examples of the repeat units C3 and C7 are as exemplified in U.S. Pat. No. 8,835,097 (JP-A 2012-246265) and U.S. Pat. No. 8,900,793 (JP-A 2012-246426).
In formulae (C1) and (C5), Xa− is a non-nucleophilic counter ion. Examples of the non-nucleophilic counter ion Xa− are as exemplified in U.S. Pat. No. 8,349,533 (JP-A 2010-113209) and U.S. Pat. No. 7,511,169 (JP-A 2007-145797).
In formulae (C4) and (C8), Y4 is a single bond or C1-C30 hydrocarbylene group which may contain a heteroatom. The hydrocarbylene group may be saturated or unsaturated and straight, branched or cyclic. Examples thereof include alkanediyl groups such as methanediyl, ethane-1,2-diyl, propane-1,3-diyl, butane-1,4-diyl, pentane-1,5-diyl, hexane-1,6-diyl, heptane-1,7-diyl, octane-1,8-diyl, nonane-1,9-diyl, decane-1,10-diyl, undecane-1,11-diyl, dodecane-1,12-diyl, tridecane-1,13-diyl, tetradecane-1,14-diyl, pentadecane-1,15-diyl, hexadecane-1,16-diyl, and heptadecane-1,17-diyl; cyclic saturated hydrocarbylene groups such as cyclopentanediyl, cyclohexanediyl, norbornanediyl, and adamantanediyl; arylene groups such as phenylene, methylphenylene, ethylphenylene, n-propylphenylene, isopropylphenylene, n-butylphenylene, isobutylphenylene, sec-butylphenylene, tert-butylphenylene, naphthylene, methylnaphthylene, ethylnaphthylene, n-propylnaphthylene, isopropylnaphthylene, n-butylnaphthylene, isobutylnaphthylene, sec-butylnaphthylene, and tert-butylnaphthylene; and combinations thereof.
In the hydrocarbylene group, some or all of the hydrogen atoms may be substituted by a moiety containing a heteroatom such as oxygen, sulfur, nitrogen or halogen and some constituent —CH2— may be replaced by a moiety containing a heteroatom such as oxygen, sulfur or nitrogen, so that the group may contain a hydroxy moiety, cyano moiety, fluorine, chlorine, bromine, iodine, carbonyl moiety, ether bond, ester bond, sulfonic ester bond, carbonate bond, lactone ring, sultone ring, carboxylic anhydride (—C(═O)—O—C(═O)—), or haloalkyl moiety.
Preferred examples of the anion in the monomer from which repeat units C4 and C8 are derived are shown below, but not limited thereto.
In formulae (C1) to (C8), R21 to R38 are each independently halogen or a C1-C20 hydrocarbyl group which may contain a heteroatom.
Suitable halogen atoms include fluorine, chlorine, bromine and iodine.
The C1-C20 hydrocarbyl group may be saturated or unsaturated and straight, branched or cyclic. Examples thereof include C1-C20 alkyl groups such as methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, tert-butyl, n-pentyl, tert-pentyl, n-hexyl, n-octyl, 2-ethylhexyl, n-nonyl and n-decyl; C3-C20 cyclic saturated hydrocarbyl groups such as cyclopentyl, cyclohexyl, cyclopentylmethyl, cyclopentylethyl, cyclopentylbutyl, cyclohexylmethyl, cyclohexylethyl, cyclohexylbutyl, norbornyl, tricyclo[5.2.1.02,6]decyl, adamantyl, and adamantylmethyl; and C6-C20 aryl groups such as phenyl, naphthyl and anthracenyl. In the hydrocarbyl groups, some or all of the hydrogen atoms may be substituted by a moiety containing a heteroatom such as oxygen, sulfur, nitrogen or halogen, and some —CH2— may be replaced by a moiety containing a heteroatom such as oxygen, sulfur or nitrogen, so that the group may contain a hydroxy, fluorine, chlorine, bromine, iodine, cyano, carbonyl, ether bond, ester bond, sulfonic ester bond, carbonate bond, lactone ring, sultone ring, carboxylic anhydride (—C(═O)—O—C(═O)—) or haloalkyl.
Also, R21 and R22 may bond together to form a ring with the sulfur atom to which they are attached. R23 and R24, R26 and R27, or R29 and R30 may bond together to form a ring with the sulfur atom to which they are attached. Examples of the ring are shown below.
Exemplary structures of the sulfonium cation in formulae (C2) to (C4) are shown below, but not limited thereto.
Exemplary structures of the iodoniumn cation in formulae (C5) to (C8) are shown below, but not limited thereto.
Of the repeat units C1 to C8, repeat unit C4 is preferred for the processing of photomask blanks because its acid strength is most appropriate in designing the acid labile group on a polymer.
The repeat units C1 to C8 are capable of generating an acid upon exposure to high-energy radiation. The acid-generating units bound to a polymer enable to appropriately control acid diffusion and hence, to form a pattern with reduced LER. Since the acid-generating unit is bound to a polymer, the phenomenon that acid volatilizes from the exposed region and re-deposits on the unexposed region during bake in vacuum is suppressed. This is effective for reducing LER and for mitigating any geometric degradation due to an unwanted film thickness loss in the unexposed region.
The repeat units C1 to C8 are preferably incorporated in a range of 0.1 to 30 mol %, more preferably 0.5 to 20 mol % based on the overall repeat units of the polymer. Each of repeat units C1 to C8 used herein may be of one type or a mixture of two or more types.
The repeat units having an aromatic ring structure are preferably incorporated in a range of at least 65 mol %, more preferably at least 75 mol %, even more preferably at least 85 mol % based on the overall repeat units of the polymer. In the case of a polymer not containing repeat units C1 to C8, it is preferred that all the repeat units have an aromatic ring structure.
The total content of repeat units A1, repeat units A2, repeat units A3-1, repeat units A3-2, and repeat units of at least one type selected from repeat units B1 to B3 is preferably at least 70 mol %, more preferably at least 80 mol %, even more preferably at least 90 mol % based on the overall repeat units of the polymer.
The polymer may be synthesized by copolymerizing suitable monomers corresponding to the desired repeat units in the standard way. The monomer may have been protected with a protective group, and polymerization be followed by deprotection reaction. The copolymerization reaction is preferably radical or anionic polymerization though not limited thereto. For the polymerization reaction, reference may be made to JP-A 2004-115630, for example.
The polymer may also be synthesized by copolymerizing a monomer mixture which contains a monomer providing repeat unit A2, but not a monomer providing repeat unit A1 to synthesize a polymer, and protecting an aromatic hydroxy group on the polymer with an acetal group. For this synthesis, a method using a vinyl ether and an acid catalyst and a method using an acetalizing agent having a haloalkoxy group and a base are known, and either of these methods may be utilized.
For example, in the former method using an acetal modifier having formula (AC-1), i.e., vinyl ether and an acid catalyst, examples of the acid catalyst include hydrochloric acid, sulfuric acid, nitric acid, methanesulfonic acid, p-toluenesulfonic acid, trifluoromethanesulfonic acid, trifluoroacetic acid, oxalic acid, and methanesulfonic acid pyridine salt. The reaction temperature is preferably 5 to 30° C. The reaction time is preferably 0.2 to 10 hours, more preferably 0.5 to 6 hours.
In the latter method using an acetal modifier having formula (AC-2), i.e., acetalizing agent having a haloalkoxy group and a base, the acetalizing agent having a haloalkoxy group is added dropwise in the presence of a basic compound such as triethylamine, diisopropylamine, pyridine, 2,6-lutidine, sodium hydroxide, potassium hydroxide, lithium hydroxide, sodium carbonate, potassium carbonate, and cesium carbonate. The reaction temperature is preferably −20° C. to 50° C. The reaction time is preferably 0.2 to 10 hours, more preferably 0.5 to 6 hours.
It is noted that the latter method using an acetalizing agent having a haloalkoxy group and a base has the risk of generating a corrosive strong acid such as hydrochloric acid which can corrode metallic reactors and piping, suggesting that the polymer can be contaminated with metal impurities which cause defects to semiconductor products. Since the lithography of advanced generation requires that raw materials for use in resist compositions have a metal impurity content of less than 10 ppb, the former method using a vinyl ether and an acid catalyst is recommended.
The polymer should preferably have a Mw of 1,000 to 50,000, and more preferably 2,000 to 20,000. A Mw of at least 1,000 eliminates the risk that pattern features are rounded at their top to invite degradations of resolution and LER. A Mw of up to 50,000 eliminates the risk that LER is degraded when a pattern with a line width of up to 100 nm is formed. As used herein, Mw is measured by GPC versus polystyrene standards using tetrahydrofuran (THF) or dimethylformamide (DMF) solvent.
The polymer preferably has a narrow molecular weight distribution or dispersity (Mw/Mn) of 1.0 to 2.0, more preferably 1.0 to 1.9, even more preferably 1.0 to 1.8. A polymer with such a narrow dispersity eliminates the risk that foreign particles are left on the pattern after development and the pattern profile is aggravated.
A further embodiment of the invention is a chemically amplified positive resist composition comprising a base polymer containing the polymer defined above. The polymer undergoes deprotection reaction of acid labile groups under the action of acid to generate an aromatic hydroxy group which has a higher acidity than an aliphatic hydroxy group. This ensures that when a resist film is formed by applying the positive resist composition, exposed, and developed in an alkaline developer, the dissolution contrast of the resist film between exposed and unexposed regions is increased. A higher resolution is thus obtained.
The base polymer may either consist of the above-defined polymer or contain another polymer in addition to the above-defined polymer. Examples of the other polymer include polymers comprising repeat units A3-1 and/or A3-2, and repeat units of at least one type selected from repeat units A2, B1 to B3, and C1 to C8, and polymers comprising repeat units having a well-known acid labile group such as tertiary alkyl group or tert-butoxycarbonyl group, and repeat units of at least one type selected from repeat units A2, B1 to B3, and C1 to C8. The benefits of the invention are obtained particularly when the base polymer contains at least 30% by weight of a polymer comprising repeat units A1.
In the embodiment wherein the base polymer contains another polymer in addition to the above-defined polymer, the content of repeat units A1 is preferably 10 to 40 mol %, more preferably 10 to 35 mol %, even more preferably 20 to 30 mol % of the overall repeat units of the polymer in the base polymer. The content of repeat units A2 is preferably 30 to 90 mol %, more preferably 40 to 85 mol % of the overall repeat units of the polymer in the base polymer. It is noted that when the polymer further contains repeat units of at least one type selected from repeat units having formulae (B1) and (B2), preferably the repeat units of at least one type containing a phenolic hydroxy group as a substituent, the content of repeat units A1 or A2 plus repeat units B1 and/or B2 falls in the above range. The content of repeat units B1 to B3 is preferably at least 5 mol % of the overall repeat units of the polymer in the base polymer while its upper limit is preferably up to 25 mol %, more preferably up to 20 mol %. The content of repeat units B4 to B6 is preferably 0 to 20 mol %, more preferably 0 to 10 mol % of the overall repeat units of the polymer in the base polymer. The content of repeat units C1 to C8 is preferably 0.1 to 30 mol %, more preferably 0.5 to 20 mol % of the overall repeat units of the polymer in the base polymer.
The content of repeat units having an aromatic ring skeleton is preferably at least 65 mol %, more preferably at least 75 mol %, even more preferably at least 85 mol % of the overall repeat units of the polymer in the base polymer. When repeat units C1 to C8 are not contained, preferably all the repeat units have an aromatic ring skeleton.
The content of repeat units A1 and repeat units of at least one type selected from repeat units A2, repeat units A3-1, repeat units A3-2, and repeat units B1 to B3 is preferably at least 70 mol %, more preferably at least 80 mol %, even more preferably at least 90 mol % of the overall repeat units of the polymer in the base polymer.
The base polymer is designed such that the dissolution rate in alkaline developer is preferably up to 10 nm/min, more preferably up to 7 nm/min, even more preferably up to 5 nm/min. In the lithography of advanced generation wherein the coating film on the substrate is in a thin film range of up to 100 nm, the influence of pattern film thickness loss during alkaline development becomes strong. When the polymer has an alkaline dissolution rate in excess of 10 nm/min, pattern collapse occurs, meaning a failure to form small-size patterns. The problem becomes outstanding in the fabrication of photomasks requiring to be defectless and having a tendency of strong development process. It is noted that the dissolution rate of a base polymer in alkaline developer is computed by spin coating a 16.7 wt % solution of a polymer in propylene glycol monomethyl ether acetate (PGMEA) solvent onto a 8-inch silicon wafer, baking at 100° C. for 90 seconds to form a film of 1,000 nm thick, developing the film in a 2.38 wt % aqueous solution of tetramethylammonium hydroxide (TMAH) at 23° C. for 100 seconds, and measuring a loss of film thickness.
The reason why a higher resolution is available from the acid labile group derived from the triple bond-containing acetal modifier of the invention is described below. The triple bond in the unexposed region has a linearity and a smaller excluded volume than a single bond and double bond. The steric hindrance among side chains extending from the polymer backbone is smaller. It is then believed that side chains are arranged in order and hence, a polymer having a higher density is formed. This improves etching resistance after pattern formation. Additionally, since the triple bond has a high electron density owing to 7r electrons and bears pseudo δ− nature, it is electrostatically repulsive to hydroxide ions in alkaline developer. This rather retards the resist film in the unexposed region from swelling in alkaline developer, restraining pattern collapse. On the other hand, the structure in the exposed region is an acetal structure which exhibits an acute reactivity to acid. Accordingly, the contrast between exposed and unexposed regions is enhanced. By virtue of the synergy of these effects, a satisfactory resolution is achieved in forming small-size patterns, which is advantageous especially for photomask processing of the sub-10 nm generation.
The chemically amplified positive resist composition may comprise an organic solvent. The organic solvent used herein is not particularly limited as long as the components are soluble therein. Examples of the organic solvent are described in JP-A 2008-111103, paragraphs [0144] to [0145] (U.S. Pat. No. 7,537,880). Specifically, exemplary solvents include ketones such as cyclohexanone and methyl-2-n-pentyl ketone; alcohols such as 3-methoxybutanol, 3-methyl-3-methoxybutanol, 1-methoxy-2-propanol, 1-ethoxy-2-propanol, and diacetone alcohol; ethers such as propylene glycol monomethyl ether (PGME), ethylene glycol monomethyl ether, propylene glycol monoethyl ether, ethylene glycol monoethyl ether, propylene glycol dimethyl ether, and diethylene glycol dimethyl ether; esters such as propylene glycol monomethyl ether acetate (PGMEA), propylene glycol monoethyl ether acetate, ethyl lactate (EL), ethyl pyruvate, butyl acetate, methyl 3-methoxypropionate, ethyl 3-ethoxypropionate, tert-butyl acetate, tert-butyl propionate, and propylene glycol mono-tert-butyl ether acetate; and lactones such as γ-butyrolactone (GBL), and mixtures thereof. Where an acid labile group of acetal form is used, a high boiling alcohol solvent such as diethylene glycol, propylene glycol, glycerol, 1,4-butanediol or 1,3-butanediol may be added to accelerate deprotection reaction of acetal.
Of the above organic solvents, it is recommended to use 1-ethoxy-2-propanol, PGMEA, PGME, cyclohexanone, EL, GBL, and mixtures thereof.
In the resist composition, the organic solvent is preferably used in an amount of 200 to 10,000 parts, more preferably 400 to 5,000 parts by weight per 80 parts by weight of the base polymer. The organic solvent may be used alone or in admixture.
The chemically amplified positive resist composition may further comprise a photoacid generator (PAG). The PAG used herein may be any compound capable of generating an acid upon exposure to high-energy radiation. Suitable PAGs include sulfonium salts, iodonium salts, sulfonyldiazomethane, N-sulfonyloxyimide, and oxime-O-sulfonate acid generators.
Suitable PAGs include nonafluorobutane sulfonate, partially fluorinated sulfonates described in JP-A 2012-189977, paragraphs [0247]-[0251], partially fluorinated sulfonates described in JP-A 2013-101271, paragraphs [0261]-[0265], and those described in JP-A 2008-111103, paragraphs [0122]-[0142] and JP-A 2010-215608, paragraphs [0080]-[0081]. Among others, arylsulfonate and alkanesulfonate type PAGs are preferred because they generate acids having an appropriate strength to deprotect the acid labile group in repeat unit A1.
The preferred PAGs are salt compounds having a sulfonium anion of the structure shown below.
Also preferred as the PAG is a salt compound containing an anion having the formula (P1).
In formula (P1), m1 is 0 or 1, p is an integer of 1 to 3, q is an integer of 1 to 5, and r is an integer of 0 to 3.
In formula (P1), L1 is a single bond, ether bond, ester bond, sulfonic ester bond, carbonate bond or carbamate bond.
In formula (P1), L2 is an ether bond, ester bond, sulfonic ester bond, carbonate bond or carbamate bond.
In formula (P1), LA ia a single bond or a C1-C20 hydrocarbylene group when p is 1. LA is a C1-C20 (p+1)-valent hydrocarbon group when p is 2 or 3. The hydrocarbylene group and (p+1)-valent hydrocarbon group may contain at least one moiety selected from ether bond, carbonyl moiety, ester bond, amide bond, sultone ring, lactam ring, carbonate bond, halogen, hydroxy moiety and carboxy moiety.
The C1-C20 hydrocarbylene group LA may be saturated or unsaturated and straight, branched or cyclic. Examples thereof include C1-C20 alkanediyl groups such as methanediyl, ethane-1,1-diyl, ethane-1,2-diyl, propane-1,3-diyl, butane-1,4-diyl, pentane-1,5-diyl, hexane-1,6-diyl, heptane-1,7-diyl, octane-1,8-diyl, nonane-1,9-diyl, decane-1,10-diyl, undecane-1,11-diyl, dodecane-1,12-diyl; C3-C20 cyclic saturated hydrocarbylene groups such as cyclopentanediyl, cyclohexanediyl, norbornanediyl and adamantanediyl; C2-C20 unsaturated aliphatic hydrocarbylene groups such as vinylene and propene-1,3-diyl; C6-C20 arylene groups such as phenylene and naphthylene; and combinations thereof. The C1-C20 (p+1)-valent hydrocarbon group LA may be saturated or unsaturated and straight, branched or cyclic. Examples thereof include those exemplified above for the C1-C20 hydrocarbylene group, with one or two hydrogen atoms being eliminated.
In formula (P1), Rf1 and Rf2 are each independently hydrogen, fluorine or trifluoromethyl, at least one being fluorine or trifluoromethyl.
In formula (P1), R111 is hydroxy, carboxy, a C1-C6 saturated hydrocarbyl group, C1-C6 saturated hydrocarbyloxy group, C2-C6 saturated hydrocarbylcarbonyloxy group, fluorine, chlorine, bromine, —N(R101A)(R101B)—, —N(R101C)—C(═O)—R101D or —N(R101C)—C(═O)—O—R101D. R101A and R101B are each independently hydrogen or a C1-C6 saturated hydrocarbyl group. R101C is hydrogen or a C1-C6 saturated hydrocarbyl group. R101D is a C1-C6 saturated hydrocarbyl group or C2-C8 unsaturated aliphatic hydrocarbyl group.
The C1-C6 saturated hydrocarbyl group represented by R101, R101A, R101B and R101C may be straight, branched or cyclic. Examples thereof include C1-C6 alkyl groups such as methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl, tert-butyl, n-pentyl, and n-hexyl; and C3-C6 cyclic saturated hydrocarbyl groups such as cyclopropyl, cyclobutyl, cyclopentyl, and cyclohexyl. Examples of the saturated hydrocarbyl moiety in the C1-C6 saturated hydrocarbyloxy group represented by R101 are as exemplified above for the saturated hydrocarbyl group. Examples of the saturated hydrocarbyl moiety in the C2-C6 saturated hydrocarbylcarbonyloxy group represented by R101 are as exemplified above for the C1-C6 saturated hydrocarbyl group, but of 1 to 5 carbon atoms.
The C2-C8 unsaturated aliphatic hydrocarbyl group represented by R101D may be straight, branched or cyclic and examples thereof include C2-C8 alkenyl groups such as vinyl, propenyl, butenyl, and hexenyl; C2-C8 alkynyl groups such as ethynyl, propynyl, and butynyl; and C3-C5 cyclic unsaturated aliphatic hydrocarbyl groups such as cyclohexenyl and norbornenyl.
In formula (P1), R102 is a C1-C20 saturated hydrocarbylene group or C6-C20 arylene group. Some or all of the hydrogen atoms in the saturated hydrocarbylene group may be substituted by halogen exclusive of fluorine. Some or all of the hydrogen atoms in the arylene group may be substituted by a substituent selected from C1-C20 saturated hydrocarbyl groups, C1-C20 saturated hydrocarbyloxy groups, C6-C20 aryl groups, halogen, and hydroxy.
The C1-C20 hydrocarbylene group represented by R102 may be saturated or unsaturated and straight, branched or cyclic. Examples thereof are as exemplified above for the C1-C20 hydrocarbylene group LA.
Examples of the C6-C20 arylene group represented by R102 include phenylene, naphthylene, phenanthrenediyl, and anthracenediyl. The C1-C20 saturated hydrocarbyl moiety and hydrocarbyl moiety in the C1-C20 hydrocarbyloxy moiety, which are substituents on the arylene group, may be straight, branched or cyclic and examples thereof include C1-C20 alkyl groups such as methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl, tert-butyl, n-pentyl, n-hexyl, n-octyl, n-nonyl, n-decyl, undecyl, dodecyl, tridecyl, tetradecyl, pentadecyl, heptadecyl, octadecyl, nonadecyl, and icosyl; and C3-C20 cyclic saturated hydrocarbyl groups such as cyclopropyl, cyclopentyl, cyclohexyl, cyclopropylmethyl, 4-methylcyclohexyl, cyclohexylmethyl, norbornyl and adamantyl. Examples of the C6-C14 arylene moiety which is a substituent on the arylene group include phenylene, naphthylene, phenanthrenediyl and anthracenediyl.
More preferably, the anion has the formula (P2).
In formula (P2), p, q, r, L, LA, and R101 are as defined above. The subscript m2 is an integer of 1 to 4. R102A is a C1-C20 saturated hydrocarbyl group, C1-C20 saturated hydrocarbyloxy group, C6-C14 aryl group, halogen or hydroxy group. When m2 is 2, 3 or 4, a plurality of R102A may be identical or different.
Examples of the anion having formula (P1) are shown below, but not limited thereto.
Preferred examples of the cation that pairs with the anion include sulfonium cations having the formula (P3) and iodonium cations having the formula (P4).
In formulae (P3) and (P4), R111 to R115 are each independently halogen or a C1-C20 hydrocarbyl group which may contain a heteroatom.
Suitable halogen atoms include fluorine, chlorine, bromine and iodine.
The C1-C20 hydrocarbyl group may be saturated or unsaturated and straight, branched or cyclic. Examples thereof include C1-C20 alkyl groups such as methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl, tert-butyl, n-pentyl, tert-pentyl, n-hexyl, n-octyl, 2-ethylhexyl, n-nonyl and n-decyl; C3-C20 cyclic saturated hydrocarbyl groups such as cyclopentyl, cyclohexyl, cyclopentylmethyl, cyclopentylethyl, cyclopentylbutyl, cyclohexylmethyl, cyclohexylethyl, cyclohexylbutyl, norbornyl, tricyclo[5.2.1.02,6]decyl, adamantyl, and adamantylmethyl; and C6-C20 aryl groups such as phenyl, naphthyl and anthracenyl. In the hydrocarbyl groups, some or all of the hydrogen atoms may be substituted by a moiety containing a heteroatom such as oxygen, sulfur, nitrogen or halogen, and some —CH2— may be replaced by a moiety containing a heteroatom such as oxygen, sulfur or nitrogen, so that the group may contain a hydroxy, fluorine, chlorine, bromine, iodine, cyano, carbonyl, ether bond, ester bond, sulfonic ester bond, carbonate bond, lactone ring, sultone ring, carboxylic anhydride (—C(═O)—O—C(═O)—) or haloalkyl moiety.
Also, R111 and R112 may bond together to form a ring with the sulfur atom to which they are attached. Examples of the ring are as exemplified above for the ring that R23 and R24, R26 and R27, or R29 and R30 in formulae (C1) to (C8), taken together, form with the sulfur atom to which they are attached.
Exemplary structures of the sulfonium cation having formula (P3) are as exemplified above for the sulfonium cation in formulae (C2) to (C4), but not limited thereto. Exemplary structures of the iodonium cation having formula (P4) are as exemplified above for the iodonium cation in formulae (C6) to (C8), but not limited thereto.
The PAG generates an acid having a pKa value of preferably −2.0 or larger, more preferably −1.0 or larger. The upper limit of pKa is preferably 2.0. Notably, the pKa value is computed using pKa DB in software ACD/Chemsketch ver: 9.04 of Advanced Chemistry Development Inc. A chemically amplified positive resist composition comprising such a PAG exhibits a better resolution because the deprotection reaction of acid labile groups in the polymer is fully catalyzed.
An appropriate amount of the PAG used is 1 to 30 parts, more preferably 2 to 20 parts by weight per 80 parts by weight of the base polymer. The PAG may be used alone or in admixture.
The positive resist composition preferably contains a quencher or acid diffusion-suppressing agent. The quencher is typically selected from conventional basic compounds. Conventional basic compounds include primary, secondary, and tertiary aliphatic amines, mixed amines, aromatic amines, heterocyclic amines, nitrogen-containing compounds with carboxy group, nitrogen-containing compounds with sulfonyl group, nitrogen-containing compounds with hydroxy group, nitrogen-containing compounds with hydroxyphenyl group, alcoholic nitrogen-containing compounds, amide derivatives, imide derivatives, and carbamate derivatives. Also included are primary, secondary, and tertiary amine compounds, specifically amine compounds having a hydroxy group, ether bond, ester bond, lactone ring, cyano group, or sulfonic ester bond as described in JP-A 2008-111103, paragraphs [0146]-[0164], and compounds having a carbamate group as described in JP 3790649. Inter alia, tris[2-(methoxymethoxy)ethyl]amine, tris[2-(methoxymethoxy)ethyl]amine-N-oxide, dibutylaminobenzoic acid, morpholine derivatives, and imidazole derivatives are preferred. Addition of a basic compound is effective for further suppressing the diffusion rate of acid in the resist film or correcting the pattern profile.
Onium salts such as sulfonium, iodonium and ammonium salts of carboxylic acids which are not fluorinated at α-position as described in U.S. Pat. No. 8,795,942 (JP-A 2008-158339) may also be used as the quencher. While an α-fluorinated sulfonic acid, imide acid, and methide acid are necessary to deprotect the acid labile group, an α-non-fluorinated carboxylic acid is released by salt exchange with an α-non-fluorinated onium salt. An α-non-fluorinated carboxylic acid functions as a quencher because it does not induce substantial deprotection reaction.
Examples of the onium salt of α-non-fluorinated carboxylic acid include compounds having the formula (Q1).
R201—CO2−MqA+ (Q1)
In formula (Q1), R201 is hydrogen or a C1-C40 hydrocarbyl group which may contain a heteroatom, exclusive of the hydrocarbyl group in which the hydrogen bonded to the carbon atom at α-position of the carboxy group is substituted by fluorine or fluoroalkyl.
The hydrocarbyl group R201 may be saturated or unsaturated and straight, branched or cyclic. Examples thereof include C1-C40 alkyl groups such as methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, tert-butyl, n-pentyl, tert-pentyl, n-hexyl, n-octyl, 2-ethylhexyl, n-nonyl, n-decyl; C3-C40 cyclic saturated hydrocarbyl groups such as cyclopentyl, cyclohexyl, cyclopentylmethyl, cyclopentylethyl, cyclopentylbutyl, cyclohexylmethyl, cyclohexylethyl, cyclohexylbutyl, norbornyl, tricyclo[5.2.1.02,6]decanyl, adamantyl, and adamantylmethyl; C2-C40 alkenyl groups such as vinyl, allyl, propenyl, butenyl and hexenyl; C3-C40 cyclic unsaturated aliphatic hydrocarbyl groups such as cyclohexenyl; C6-C40 aryl groups such as phenyl, naphthyl, alkylphenyl groups (e.g., 2-methylphenyl, 3-methylphenyl, 4-methylphenyl, 4-ethylphenyl, 4-tert-butylphenyl, 4-n-butylphenyl), dialkylphenyl groups (e.g., 2,4-dimethylphenyl and 2,4,6-triisopropylphenyl), alkylnaphthyl groups (e.g., methylnaphthyl and ethylnaphthyl), dialkylnaphthyl groups (e.g., dimethylnaphthyl and diethylnaphthyl); and C7-C40 aralkyl groups such as benzyl, 1-phenylethyl and 2-phenylethyl.
In the hydrocarbyl groups, some hydrogen may be substituted by a moiety containing a heteroatom such as oxygen, sulfur, nitrogen or halogen, and some —CH2— may be replaced by a moiety containing a heteroatom such as oxygen, sulfur or nitrogen, so that the group may contain a hydroxy moiety, cyano moiety, carbonyl moiety, ether bond, thioether bond, ester bond, sulfonic ester bond, carbonate bond, lactone ring, sultone ring, carboxylic anhydride (—C(═O)—O—C(═O)—), or haloalkyl moiety. Suitable heteroatom-containing hydrocarbyl groups include heteroaryl groups such as thienyl; alkoxyphenyl groups such as 4-hydroxyphenyl, 4-methoxyphenyl, 3-methoxyphenyl, 2-methoxyphenyl, 4-ethoxyphenyl, 4-tert-butoxyphenyl, 3-tert-butoxyphenyl; alkoxynaphthyl groups such as methoxynaphthyl, ethoxynaphthyl, n-propoxynaphthyl and n-butoxynaphthyl; dialkoxynaphthyl groups such as dimethoxynaphthyl and diethoxynaphthyl; and aryloxoalkyl groups, typically 2-aryl-2-oxoethyl groups such as 2-phenyl-2-oxoethyl, 2-(1-naphthyl)-2-oxoethyl and 2-(2-naphthyl)-2-oxoethyl.
In formula (Q1), MqA+ is an onium cation. The onium cation is preferably selected from sulfonium, iodonium and ammonium cations, more preferably sulfonium and iodonium cations. Exemplary sulfonium cations are as exemplified above for the sulfonium cation in formulae (C2) to (C4). Exemplary iodonium cations are as exemplified above for the iodonium cation in formulae (C6) to (C8).
Examples of the anion in the onium salt having formula (Q1) are shown below, but not limited thereto.
A sulfonium salt of iodized benzene ring-containing carboxylic acid having the formula (Q2) is also useful as the quencher.
In formula (Q2), s is an integer of 1 to 5, t is an integer of 0 to 3, s+t is from 1 to 5, and u is an integer of 1 to 3.
In formula (Q2), R211 is hydroxy, fluorine, chlorine, bromine, amino, nitro, cyano, or a C1-C6 saturated hydrocarbyl, C1-C6 saturated hydrocarbyloxy, C2-C6 saturated hydrocarbylcarbonyloxy or C1-C4 saturated hydrocarbylsulfonyloxy group, in which some or all hydrogen may be substituted by halogen, or —N(R211A)—C(═O)—R211B, or —N(R211A)—C(═O)—O—R211B. R211A is hydrogen or a C1-C6 saturated hydrocarbyl group. R211B is a C1-C6 saturated hydrocarbyl or C2-C8 unsaturated aliphatic hydrocarbyl group. A plurality of R211 may be the same or different when t and/or u is 2 or 3.
In formula (Q2), L11 is a single bond, or a C1-C20 (u+1)-valent linking group which may contain at least one moiety selected from ether bond, carbonyl moiety, ester bond, amide bond, sultone ring, lactam ring, carbonate bond, halogen, hydroxy moiety, and carboxy moiety. The saturated hydrocarbyl, saturated hydrocarbyloxy, saturated hydrocarbylcarbonyloxy, and saturated hydrocarbylsulfonyloxy groups may be straight, branched or cyclic.
In formula (Q2), R212, R213 and R214 are each independently halogen, or a C1-C20 hydrocarbyl group which may contain a heteroatom. The hydrocarbyl group may be saturated or unsaturated and straight, branched or cyclic. Examples thereof include C1-C20 alkyl, C2-C20 alkenyl, C6-C20 aryl, and C7-C20 aralkyl groups. In these groups, some or all hydrogen may be substituted by hydroxy, carboxy, halogen, oxo, cyano, nitro, sultone ring, sulfo, or sulfonium salt-containing moiety, or some —CH2— may be replaced by an ether bond, ester bond, carbonyl moiety, amide bond, carbonate bond or sulfonic ester bond. Also R212 and R213 may bond together to form a ring with the sulfur atom to which they are attached.
Examples of the compound having formula (Q2) include those described in U.S. Pat. No. 10,295,904 (JP-A 2017-219836). These compounds exert a sensitizing effect due to remarkable absorption and an acid diffusion-controlling effect.
A nitrogen-containing carboxylic acid salt compound having the formula (Q3) is also useful as the quencher.
In formula (Q3), R221 to R224 are each independently hydrogen, -L12-CO2—, or a C1-C20 hydrocarbyl group which may contain a heteroatom. R221 and R222, R222 and R223, or R223 and R224 may bond together to form a ring with the carbon atom to which they are attached. L12 is a single bond or a C1-C20 hydrocarbylene group which may contain a heteroatom. R221 is hydrogen or a C1-C20 hydrocarbyl group which may contain a heteroatom.
In formula (Q3), the ring Rr is a C2-C6 ring containing the carbon and nitrogen atoms in the formula, in which some or all of the carbon-bonded hydrogen atoms may be substituted by a C1-C20 hydrocarbyl group or -L12-CO2 and in which some carbon may be replaced by sulfur, oxygen or nitrogen. The ring may be alicyclic or aromatic and is preferably a 5- or 6-membered ring. Suitable rings include pyridine, pyrrole, pyrrolidine, piperidine, pyrazole, imidazoline, pyridazine, pyrimidine, pyrazine, imidazoline, oxazole, thiazole, morpholine, thiazine, and triazole rings.
The carboxylic onium salt having formula (Q3) has at least one -L12-CO2—. That is, at least one of R221 to R224 is -L12-CO2—, and/or at least one of hydrogen atoms bonded to carbon atoms in the ring Rr is substituted by -L12-CO2—.
In formula (Q3), MqB+ is a sulfonium, iodonium or ammonium cation, with the sulfonium cation being preferred. Examples of the sulfonium cation are as exemplified above for the sulfonium cation in formulae (C2) to (C4).
Examples of the anion in the compound having formula (Q3) are shown below, but not limited thereto.
Weak acid betaine compounds are also useful as the quencher. Non-limiting examples thereof are shown below.
Also useful are quenchers of polymer type as described in U.S. Pat. No. 7,598,016 (JP-A 2008-239918). The polymeric quencher segregates at the resist surface after coating and thus enhances the rectangularity of resist pattern. When a protective film is applied as is often the case in the immersion lithography, the polymeric quencher is also effective for preventing a film thickness loss of resist pattern or rounding of pattern top.
When used, the quencher is preferably added in an amount of 0 to 50 parts, more preferably 0.1 to 40 parts by weight per 80 parts by weight of the base polymer. The quencher may be used alone or in admixture.
When the chemically amplified positive resist composition contains both the PAG and the quencher, the weight ratio of the PAG to the quencher is preferably less than 3/1, more preferably less than 2.5/1, even more preferably less than 2/1. As long as the weight ratio of the PAG to the quencher is in the range, the resist composition is able to fully suppress acid diffusion, leading to improved resolution and dimensional uniformity.
The chemically amplified positive resist composition may further comprise a fluorinated polymer for the purposes of enhancing contrast, preventing chemical flare of acid upon exposure to high-energy radiation, preventing mixing of acid from an anti-charging film in the step of coating an anti-charging film-forming material on a resist film, and suppressing unexpected unnecessary pattern degradation. The fluorinated polymer contains repeat units of at least one type selected from repeat units having the formula (D1), repeat units having the formula (D2), repeat units having the formula (D3), and repeat units having the formula (D4). It is noted that repeat units having formulae (D1), (D2), (D3), and (D4) are also referred to as repeat units D1, D2, D3, and D4, respectively, hereinafter. Since the fluorinated polymer also has a surface active function, it can prevent insoluble residues from re-depositing onto the substrate during the development step and is thus effective for preventing development defects.
In formulae (D1) to (D4), RB is each independently hydrogen, fluorine, methyl or trifluoromethyl. R301, R302, R304 and R305 are each independently hydrogen or a C1-C10 saturated hydrocarbyl group. R303, R306, R307 and R308 are each independently hydrogen, a C1-C15 hydrocarbyl group or fluorinated hydrocarbyl group, or an acid labile group, with the proviso that an ether bond or carbonyl moiety may intervene in a carbon-carbon bond in the hydrocarbyl groups or fluorinated hydrocarbyl groups represented by R303, R306, R307 and R308. Z1 is a C1-C20 (n+1)-valent hydrocarbon group or C1-C20 (n+1)-valent fluorinated hydrocarbon group, and n is an integer of 1 to 3.
Examples of the C1-C10 saturated hydrocarbyl group represented by R301, R302, R304 and R305 include C1-C10 alkyl groups such as methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl, tert-butyl, n-pentyl, n-hexyl, n-heptyl, n-octyl, n-nonyl, and n-decyl, and C3-C10 cyclic saturated hydrocarbyl groups such as cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, adamantyl, and norbornyl. Inter alia, C1-C6 saturated hydrocarbyl groups are preferred.
Examples of the C1-C15 hydrocarbyl group represented by R303, R306, R307 and R308 include C1-C15 alkyl, C2-C15 alkenyl and C2-C15 alkynyl groups, with the alkyl groups being preferred. Suitable alkyl groups include methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl, n-pentyl, n-hexyl, n-heptyl, n-octyl, n-nonyl, n-decyl, n-undecyl, n-dodecyl, n-tridecyl, n-tetradecyl and n-pentadecyl. The fluorinated hydrocarbyl groups correspond to the foregoing hydrocarbyl groups in which some or all carbon-bonded hydrogen atoms are substituted by fluorine atoms.
Examples of the C1-C20 (n+1)-valent hydrocarbon group Z1 include the foregoing C1-C20 alkyl groups and C3-C20 cyclic saturated hydrocarbyl groups, with n number of hydrogen atoms being eliminated. Examples of the C1-C20 (n+1)-valent fluorinated hydrocarbon group Z1 include the foregoing (n+1)-valent hydrocarbon groups in which one or more hydrogen atoms are substituted by fluorine.
Examples of the repeat units D1 to D4 are given below, but not limited thereto. Herein RB is as defined above.
Preferably the fluorinated polymer further contains repeat units of at least one type selected from repeat units having the formula (D5) and repeat units having the formula (D6). It is noted that repeat units having formulae (D5) and (D6) are also referred to as repeat units D5 and D6, respectively, hereinafter.
In formulae (D5) and (D6), RC is each independently hydrogen or methyl. R309 is hydrogen or a C1-C5 straight or branched hydrocarbyl group in which a heteroatom-containing moiety may intervene in a carbon-carbon bond. R310 is a C1-C5 straight or branched hydrocarbyl group in which a heteroatom-containing moiety may intervene in a carbon-carbon bond. R311 is a C1-C20 saturated hydrocarbyl group in which at least one hydrogen is substituted by fluorine and some constituent —CH2— may be replaced by an ester bond or ether bond. The subscript x is an integer of 1 to 3, y is an integer satisfying: 0≤y≤5+2z-x, and z is 0 or 1. Z2 is a single bond, *—C(═O)—O— or *—C(═O)—NH— wherein the asterisk (*) designates a point of attachment to the carbon atom in the backbone. Z3 is a single bond, —O—, *—C(═O)—O—Z31—Z32— or *—C(═O)—NH—Z31—Z32—, wherein Z31 is a single bond or a C1-C10 saturated hydrocarbylene group, Z32 is a single bond, ester bond, ether bond or sulfonamide bond, and the asterisk (*) designates a point of attachment to the carbon atom in the backbone.
Examples of the C1-C5 hydrocarbyl groups R309 and R310 include alkyl, alkenyl and alkynyl groups, with the alkyl groups being preferred. Suitable alkyl groups include methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, sec-butyl, and n-pentyl. In these groups, a moiety containing a heteroatom such as oxygen, sulfur or nitrogen may intervene in a carbon-carbon bond.
Preferably, —OR309 is a hydrophilic group. In this case, R309 is preferably hydrogen or a C1-C5 alkyl group in which oxygen intervenes in a carbon-carbon bond.
Z2 is preferably *—C(═O)—O— or *—C(═O)—NH—. Also preferably RC is methyl. The inclusion of carbonyl in Z2 enhances the ability to trap the acid originating from the anti-charging film. A polymer wherein RC is methyl is a robust polymer having a high glass transition temperature (Tg) which is effective for suppressing acid diffusion. As a result, the resist film is improved in stability with time, and neither resolution nor pattern profile is degraded.
Examples of the repeat unit D5 are given below, but not limited thereto. Herein RC is as defined above.
The C1-C10 saturated hydrocarbylene group Z3 may be straight, branched or cyclic and examples thereof include methanediyl, ethane-1,1-diyl, ethane-1,2-diyl, propane-1,1-diyl, propane-1,2-diyl, propane-1,3-diyl, propane-2,2-diyl, butane-1,1-diyl, butane-1,2-diyl, butane-1,3-diyl, butane-2,3-diyl, butane-1,4-diyl, and 1,1-dimethylethane-1,2-diyl.
The C1-C20 saturated hydrocarbyl group having at least one hydrogen substituted by fluorine, represented by R311, may be straight, branched or cyclic and examples thereof include C1-C20 alkyl groups and C3-C20 cyclic saturated hydrocarbyl groups in which at least one hydrogen is substituted by fluorine.
Examples of the repeat unit D6 are given below, but not limited thereto. Herein RC is as defined above.
The repeat units D1 to D4 are preferably incorporated in an amount of 15 to 95 mol %, more preferably 20 to 85 mol % based on the overall repeat units of the fluorinated polymer. The repeat unit D5 and/or D6 is preferably incorporated in an amount of 5 to 85 mol %, more preferably 15 to 80 mol % based on the overall repeat units of the fluorinated polymer. Each of repeat units D1 to D6 may be used alone or in admixture.
The fluorinated polymer may comprise additional repeat units as well as the repeat units D1 to D6. Suitable additional repeat units include those described in U.S. Pat. No. 9,091,918 (JP-A 2014-177407, paragraphs [0046]-[0078]). When the fluorinated polymer comprises additional repeat units, their content is preferably up to 50 mol % based on the overall repeat units.
The fluorinated polymer may be synthesized by combining suitable monomers optionally protected with a protective group, copolymerizing them in the standard way, and effecting deprotection reaction if necessary. The copolymerization reaction is preferably radical or anionic polymerization though not limited thereto. For the polymerization reaction, reference may be made to JP-A 2004-115630.
The fluorinated polymer should preferably have a Mw of 2,000 to 50,000, and more preferably 3,000 to 20,000. A fluorinated polymer with a Mw of at least 2,000 prevents extra acid diffusion and degradations of resolution and age stability. A polymer with a Mw of up to 5,000 has a sufficient solubility in solvent and leaves no coating defects. The fluorinated polymer preferably has a dispersity (Mw/Mn) of 1.0 to 2.2, more preferably 1.0 to 1.7.
In the resist composition, the fluorinated polymer is preferably used in an amount of 0.01 to 30 parts by weight, more preferably 0.1 to 20 parts by weight, even more preferably 0.5 to 10 parts by weight per 80 parts by weight of the base polymer.
The positive resist composition may contain any conventional surfactants for facilitating to coat the composition to the substrate. A number of surfactants are known in the art as described in JP-A 2004-115630, and any suitable one may be chosen therefrom. The amount of surfactant added is preferably 0 to 5 parts by weight per 80 parts by weight of the base polymer. It is noted that the surfactant need not be added when the positive resist composition contains a fluorinated polymer as mentioned above, which also plays the role of a surfactant.
The positive resist composition may be prepared by dissolving the base polymer and optionally other components in an organic solvent at the same time or in any desired order to form a uniform resist solution. The resist solution is preferably filtered. Using a filter of nylon or polyethylene for filtration, gel fractions and particles can be effectively removed from the resist solution. Also preferably, a filter having a pore size of up to 20 nm is used so that the quality of the resist solution may be maintained adequate for the lithography of the advanced generation.
The resist film formed from the chemically amplified positive resist composition in an unexposed region preferably has a dissolution rate in alkaline developer of up to 10 nm/min, more preferably up to 9 nm/min, even more preferably up to 8 nm/min. Where the resist film is in the thin film range of up to 100 nm, the influence of pattern film thickness loss in alkaline developer becomes greater. When the dissolution rate in unexposed region is no more than 10 nm/min, pattern collapse does not occur, succeeding in forming a small-size pattern. This becomes outstanding in the fabrication of photomasks requiring to be defectless and having a tendency of strong development process. It is noted that the dissolution rate of an unexposed region is computed by spin coating the positive resist composition onto a 150-mm (6-inch) silicon wafer, baking at 110° C. for 240 seconds to form a resist film of 80 nm thick, developing the film in a 2.38 wt % TMAH aqueous solution at 23° C. for 80 seconds, and measuring a loss of film thickness.
From the standpoint of improving the develop loading effect, the positive resist composition is preferably designed such that a resist film formed therefrom in an exposed region may have a dissolution rate in alkaline developer of at least 50 nm/sec, more preferably at least 80 nm/sec. As long as the dissolution rate is at least 50 nm/sec, the resist film is uniformly dissolved in alkaline developer independent of a pattern layout difference in the case of a grouped/isolated pattern, and the variation of line width can be minimized. It is noted that the dissolution rate of an exposed region is computed by spin coating the positive resist composition onto a 200-mm (8-inch) silicon wafer, baking at 110° C. for 60 seconds to form a resist film of 90 nm thick, exposing the resist film to KrF excimer laser radiation in a sufficient energy dose to complete deprotection reaction on the polymer, baking at 110° C. for 60 seconds, developing the film in a 2.38 wt % TMAH aqueous solution at 23° C., and measuring a loss of film thickness by means of a resist development analyzer.
Since the acetal acid labile group is also effective for suppressing the influence of back scattering during EB image writing, the resist composition avoids the pattern profile from being inversely tapered in a sensitivity region of at least 50 μC/cm2, preferably at least 80 μC/cm2, more preferably at least 100 μC/cm2 and displays excellent rectangular performance.
A still further embodiment of the invention is a process for forming a resist pattern comprising the steps of applying the chemically amplified positive resist composition onto a substrate to form a resist film thereon, exposing patternwise the resist film to high-energy radiation, and developing the exposed resist film in an alkaline developer.
The resist composition is first applied onto a substrate on which an integrated circuit is to be formed (e.g., Si, SiO, SiO2, SiN, SiON, TiN, WSi, BPSG, SOG, or organic antireflective coating) or a substrate on which a mask circuit is to be formed (e.g., Cr, CrO, CrON, MoSi2, Si, SiO, SiO2, SiON, SiONC, CoTa, NiTa, TaBN, or SnO2) by a suitable coating technique such as spin coating. The coating is prebaked on a hot plate at a temperature of preferably 60 to 150° C. for 1 to 20 minutes, more preferably at 80 to 140° C. for 1 to 10 minutes. The resulting resist film is generally 0.03 to 2 μm thick.
The resist film is then exposed to a desired pattern of high-energy radiation such as excimer laser radiation (e.g., KrF or ArF), EUV of wavelength 3 to 15 nm, or EB. Exposure using EB is preferred. For forming the desired pattern, EB is preferably irradiated so as to give a dose of 50 to 400 μC/cm2. Since the polymer containing acetal acid labile groups is also effective for suppressing the influence of back scattering during EB image writing, the resist composition avoids the pattern profile from being inversely tapered in a sensitivity region of at least 50 μC/cm2, preferably at least 80 μC/cm2, more preferably at least 100 μC/cm2 and displays excellent rectangular performance.
The exposure may be performed by conventional lithography whereas the immersion lithography of holding a liquid, typically water between the resist film and the mask may be employed if desired. In the case of immersion lithography, a protective film which is insoluble in water may be formed on the resist film.
After the exposure, the resist film may be baked (PEB) on a hotplate preferably at 60 to 150° C. for 1 to 20 minutes, more preferably at 80 to 140° C. for 1 to 10 minutes.
After the exposure or PEB, the resist film is developed in a developer in the form of an aqueous alkaline solution for preferably 0.1 to 3 minutes, more preferably 0.5 to 2 minutes by conventional techniques such as dip, puddle and spray techniques. A typical developer is a 0.1 to 5 wt %, preferably 2 to 3 wt % aqueous solution of tetramethylammonium hydroxide (TMAH) or another alkali. In this way, the desired pattern is formed on the substrate.
From the positive resist composition, a pattern with a satisfactory isolated-space resolution and reduced LER can be formed. The resist composition is effectively applicable to a substrate, specifically a substrate having a surface layer of material to which a resist film is less adherent and which is likely to invite pattern stripping or pattern collapse. A typical substrate has an outermost surface of a material containing at least one element selected from chromium, silicon, tantalum, molybdenum, cobalt, nickel, tungsten, and tin. Preferred are substrates having sputter deposited on their outermost surface metallic chromium or a chromium compound containing at least one light element selected from oxygen, nitrogen and carbon and substrates having an outermost surface layer of SiO, SiOx, or a tantalum compound, molybdenum compound, cobalt compound, nickel compound, tungsten compound or tin compound. The substrate to which the positive resist composition is applied is most typically a photomask blank which may be either of transmission or reflection type. A mask blank of transmission or reflection type which is coated with the chemically amplified positive resist composition is also contemplated herein.
The mask blank of transmission type is typically a photomask blank having a light-shielding film of chromium-based material. It may be either a photomask blank for binary masks or a photomask blank for phase shift masks. In the case of the binary mask-forming photomask blank, the light-shielding film may include an antireflection layer of chromium-based material and a light-shielding layer. In one example, the antireflection layer on the surface layer side is entirely composed of a chromium-based material. In an alternative example, only a surface side portion of the antireflection layer on the surface layer side is composed of a chromium-based material and the remaining portion is composed of a silicon compound-based material which may contain a transition metal. In the case of the phase shift mask-forming photomask blank, it may include a phase shift film and a chromium-based light-shielding film thereon.
Photomask blanks having an outermost layer of chromium base material are well known as described in JP-A 2008-026500 and JP-A 2007-302873 and the references cited therein. Although the detail description is omitted herein, the following layer construction may be employed when a light-shielding film including an antireflective layer and a light-shielding layer is composed of chromium base materials.
In the example where a light-shielding film including an antireflective layer and a light-shielding layer is composed of chromium base materials, layers may be stacked in the order of an antireflective layer and a light-shielding layer from the outer surface side, or layers may be stacked in the order of an antireflective layer, a light-shielding layer, and an antireflective layer from the outer surface side. Each of the antireflective layer and the light-shielding layer may be composed of multiple sub-layers. When the sub-layers have different compositions, the composition may be graded discontinuously or continuously from sub-layer to sub-layer. The chromium base material used herein may be metallic chromium or a material consisting of metallic chromium and a light element such as oxygen, nitrogen or carbon. Examples used herein include metallic chromium, chromium oxide, chromium nitride, chromium carbide, chromium oxynitride, chromium oxycarbide, chromium nitride carbide, and chromium oxide nitride carbide.
The mask blank of reflection type includes a substrate, a multilayer reflective film formed on one major surface (front surface) of the substrate, for example, a multilayer reflective film of reflecting exposure radiation such as EUV radiation, and an absorber film formed on the multilayer reflective film, for example, an absorber film of absorbing exposure radiation such as EUV radiation to reduce reflectivity. From the reflection type mask blank (reflection type mask blank for EUV lithography), a reflection type mask (reflection type mask for EUV lithography) having an absorber pattern (patterned absorber film) formed by patterning the absorber film is produced. The EUV radiation used in the EUV lithography has a wavelength of 13 to 14 nm, typically about 13.5 nm.
The multilayer reflective film is preferably formed contiguous to one major surface of a substrate. An underlay film may be disposed between the substrate and the multilayer reflective film as long as the benefits of the invention are not lost. The absorber film may be formed contiguous to the multilayer reflective film while a protective film (protective film for the multilayer reflective film) may be disposed between the multilayer reflective film and the absorber film, preferably contiguous to the multilayer reflective film, more preferably contiguous to the multilayer reflective film and the absorber film. The protective film is used for protecting the multilayer reflective film in a cleaning, tailoring or otherwise processing step. Also preferably, the protective film has an additional function of protecting the multilayer reflective film or preventing the multilayer reflective film from oxidation during the step of patterning the absorber film by etching. Besides, an electroconductive film, which is used for electrostatic chucking of the reflection type mask to an exposure tool, may be disposed below the other major surface (back side surface) which is opposed to the one major surface of the substrate, preferably contiguous to the other major surface. It is provided herein that a substrate has one major surface which is a front or upper side surface and another major surface which is a back or lower side surface. The terms “front and back” sides or “upper and lower” sides are used for the sake of convenience. One or another major surface may be either of the two major surfaces (film-bearing surfaces) of a substrate, and in this sense, front and back or upper and lower are exchangeable. Specifically, the multilayer reflective film may be formed by any of the methods of JP-A 2021-139970 and the references cited therein.
The resist pattern forming process is successful in forming patterns having a high resolution, suppressed influences of develop loading and residue defects, and a small size difference independent of pattern density (grouped and isolated patterns), even on a substrate (typically mask blank of transmission or reflection type) whose outermost surface is made of a material tending to affect resist pattern profile such as a chromium, silicon or tantalum-containing material.
Examples of the invention are given below by way of illustration and not by way of limitation. The abbreviation “pbw” is parts by weight. For copolymers, the compositional ratio is a molar ratio and Mw is determined by GPC versus polystyrene standards. For analysis, a 1H-NMR spectrometer ECA-500 by JEOL Ltd. was used.
In a reactor under nitrogen atmosphere, 108 g (purity 55 wt %) of sodium hydride was suspended in 600 g of THF. After the reactor was heated at a temperature of 50° C., a solution of 182 g of 2-butyn-1-ol in 230 g of THF was added dropwise. At the end of addition, the solution was stirred for 2 hours while keeping the internal temperature of 50° C. At the end of stirring, 35 g of sodium iodide was added, and 214 g of methacrylic chloride was added dropwise while keeping the internal temperature of 50-60° C. The reactor was heated at a temperature of 65° C., after which the solution was aged for 5 hours. At the end of aging, the reaction solution was cooled and 1,000 g of water was added thereto to quench the reaction. The desired compound was extracted with 1,000 g of hexane, followed by ordinary aqueous work-up and solvent distillation. On purification by distillation, 293 g of Intermediate In-1 was obtained (yield 99%).
In a reactor under nitrogen atmosphere, 293 g of Intermediate In-1 and 23 g of potassium t-butoxide were dissolved in 300 g of dimethylformamide (DMSO). The reactor was heated at a temperature of 80° C., after which the solution was aged for 12 hours. At the end of aging, the reaction solution was cooled and 500 g of water was added thereto to quench the reaction. The desired compound was extracted with 500 g of hexane, followed by ordinary aqueous work-up and solvent distillation. On purification by distillation, 246 g of the desired acetal modifier AC-1 was obtained as colorless oily matter (yield 84%).
The acetal modifier AC-1 was analyzed by NMR spectroscopy.
1H-NMR (600 MHz in DMSO-d6): δ=6.34 (1H, m), 3.85 (2H, s), 1.82 (3H, s), 1.63 (6H, s) ppm
Acetal modifiers AC-2 to AC-8 were synthesized by a well-known organic synthesis method using corresponding reactants.
A 100-ml flask was charged with 20 g of a hydroxystyrene-acenaphthylene copolymer and 46.7 g of THF solvent. In nitrogen atmosphere, 0.5 g of methanesulfonic acid was added at −25° C., after which 4.4 g of acetal modifier AC-1 was added dropwise. The solution was held at room temperature for 4.5 hours for reaction. At the end of reaction, 1.0 g of triethylamine was added to the reaction solution, which was added dropwise to 500 g of hexane for precipitation. The copolymer precipitate was collected by filtration and washed twice with 120 g of hexane. The copolymer was dissolved in a mixture of 60 g of ethyl acetate and 20 g of water. The resulting solution was transferred to a separatory funnel. After 0.7 g of acetic acid was added to the solution, separatory operation was carried out. With the lower layer removed, 20 g of water and 0.9 g of pyridine were added to the organic layer, followed by separatory operation. With the lower layer removed, 20 g of water was added to the organic layer, followed by water washing and separatory operation. The water washing and separatory operation was carried out 5 times in total. Thereafter, the organic layer was concentrated, the concentrate was dissolved in 40 g of PGME, and the solution was added dropwise to 600 g of water. The resulting precipitate was collected by filtration, washed with water, and dried, obtaining 20.3 g of the target polymer P-1 as a white polymer. Polymer P-1 was analyzed by 1H-NMR, 13C-NMR, and GPC, with the analytical results shown below.
Polymers P-2 to P-15 were synthesized by the same procedure as in Synthesis Example 1 except that the polymer and/or acetal modifier was changed.
Polymers AP-1 to AP-6 and cP-1 to cP-6 were synthesized by a well-known method using monomers in combination.
The dissolution rate of a polymer in alkaline developer was computed by spin coating a 16.7 wt % solution of a polymer in PGMEA solvent onto a 8-inch silicon wafer, baking at 100° C. for 90 seconds to form a film of 1,000 nm thick, developing the film in a 2.38 wt % TMAH aqueous solution at 23° C. for 100 seconds, and measuring a loss of film thickness. As a result, Polymers P-1 to P-15, AP-1 to AP-6 and cP-2 to cP-6 showed a dissolution rate of less than 5 nm/min and comparative Polymer cP-1 showed a dissolution rate of 14 nm/min.
A chemically amplified positive resist composition (R-1 to R-41, CR-1 to CR-10) was prepared by dissolving selected components in an organic solvent in accordance with the formulation shown in Tables 1 to 3 and filtering the solution through a nylon filter with a pore size of 5 μm and a UPE filter with a pore size of 1 nm. The organic solvent was a mixture of 940 pbw of PGMEA, 1,870 pbw of EL, and 1,870 pbw of PGME.
The components in Tables 1 to 3 are identified below.
There was furnished a reflection type mask blank for EUV lithography masks. Namely, a mask blank was furnished by forming a multilayer reflective film of 40 Mo/Si layers having a thickness of 284 nm on a low thermal expansion glass substrate of 6 inch squares, then successively depositing thereon a Ru film of 3.5 nm thick as a protective film, a TaN film of 70 nm thick as an absorber layer, and a CrN film of 6 nm thick as a hard mask.
Using a coater/developer system ACT-M (Tokyo Electron Ltd.), each of the positive resist compositions (R-1 to R-41, CR-1 to CR-10) was spin coated onto the reflection type photomask blank and prebaked on a hotplate at 110° C. for 600 seconds to form a resist film of 80 nm thick. The thickness of the resist film was measured by an optical film thickness measurement system Nanospec (Nanometrics Inc.). Measurement was made at 81 points in the plane of the blank substrate excluding an outer rim portion extending 10 mm inward from the periphery, and an average film thickness and a film thickness range were computed therefrom.
The resist film was exposed to EB using an EB writer system EBM-5000Plus (NuFlare Technology Inc., accelerating voltage 50 kV), then baked (PEB) at 110° C. for 600 seconds, and developed in a 2.38 wt % TMAH aqueous solution, thereby yielding a positive pattern.
The resist pattern was evaluated as follows. The patterned mask blank was observed under a top-down scanning electron microscope (TD-SEM). The optimum dose (Eop) was defined as the exposure dose (μC/cm2) which provided a 1:1 resolution at the top and bottom of a 200-nm 1:1 line-and-space (LS) pattern. The resolution (or maximum IS resolution) was defined as the minimum size at the dose which provided a 9:1 resolution for an isolated space (IS) of 200 nm. The edge roughness (LER) of a 200-nm LS pattern was measured under SEM. The develop loading was evaluated by forming a 200-nm LS pattern at the dose (μC/cm2) capable of resolving a 1:1 LS pattern of 200 nm design at a ratio 1:1 and a 200-nm LS pattern including dummy patterns having a density of 15%, 25%, 33%, 45%, 50%, 55%, 66%, 75%, 85%, and 95% arranged around the center pattern, measuring the size of spaces under SEM, and comparing the size difference among grouped and isolated patterns. Also, the pattern was visually observed to judge whether or not the profile was rectangular.
The dissolution rate of an exposed region was computed by spin coating the resist solution onto a 8-inch silicon wafer, baking at 110° C. for 60 seconds to form a resist film of 90 nm thick, exposing the resist film to KrF excimer laser radiation in a dose (mJ/cm2) capable of resolving a 200-nm 1:1 LS pattern at a ratio 1:1, baking at 110° C. for 60 seconds, developing the film in a 2.38 wt % TMAH aqueous solution at 23° C., and measuring a loss of film thickness by means of a resist development rate analyzer (RDA-800 by Litho Tech Japan Corp.). The results are shown in Tables 4 to 6.
Each of the resist compositions (R-1 to R-41, CR-1 to CR-10) was applied onto a reflection type mask blank for EUV lithography masks to form a resist film. Using an EB writer system EBM-5000Plus (NuFlare Technology Inc., accelerating voltage 50 kV), the resist film was exposed over its entire surface to EB in its optimum dose. The resist film was then baked (PEB) at 110° C. for 600 seconds and developed in a 2.38 wt % TMAH aqueous solution. Using a mask defect inspection system M9650 (Laser Tech), development residues were evaluated. The total number of defects after development is shown in Tables 7 to 9.
All the chemically amplified positive resist compositions (R-1 to R-41) within the scope of the invention show satisfactory IS resolution, LER and pattern rectangularity and reduced values of develop loading, as compared with comparative resist compositions (CR-1 to CR-10).
Each of the polymers (Polymers P-1 to P-41 and CP-1 to CP-10 in Tables 1 and 2), 2 g, was thoroughly dissolved in 10 g of cyclohexanone, and passed through a filter having a pore size of 0.2 μm, obtaining a polymer solution. The polymer solution was spin coated onto a mask blank of 152 mm squares having a chromium film as the outermost surface and baked to form a polymer film of 300 nm thick. Using a mask dry etching instrument Gen-4 (Plasma Thermo Ltd.), the polymer film was etched with chlorine gas under the following conditions.
The difference in film thickness before and after etching was determined. A smaller value of film thickness difference, i.e., a smaller loss indicates better etching resistance. The results of dry etching resistance are shown in Tables 10 to 12.
As is evident from the results shown in Tables 10 to 12, the inventive polymers display excellent etching resistance against Cl2/O2 gas.
It has been demonstrated that the polymers, chemically amplified resist compositions, and resist pattern forming process according to the invention are useful in the photolithography for the fabrication of semiconductor devices, especially the processing of photomask blanks of transmission and reflection types.
Japanese Patent Application No. 2023-043352 is incorporated herein by reference. Although some preferred embodiments have been described, many modifications and variations may be made thereto in light of the above teachings. It is therefore to be understood that the invention may be practiced otherwise than as specifically described without departing from the scope of the appended claims.
| Number | Date | Country | Kind |
|---|---|---|---|
| 2023-043352 | Mar 2023 | JP | national |
