AlGaAs or InGaP low turn-on voltage GaAs-based heterojunction bipolar transistor

Abstract

A heterojunction bipolar transistor is provided that has a reduced turn-on voltage threshold. A base spacer layer is provided and alternately an emitter layer is provided that has a lowered energy gap. The lowered energy gap of the base spacer or the emitter spacer allow the heterojunction bipolar transistor to realize a lower turn-on voltage threshold. The thickness of the emitter layer if utilized is kept to a minimum to reduce the associated space charge recombination current in the heterojunction bipolar transistor.

Description

BACKGROUND OF THE INVENTION

[0002] This invention relates generally to semiconductor transistors. In particular, the invention relates to heterojunction bipolar transistors. Heterojunction bipolar transistors (HBTs) offer much higher speed of operation than the more prevalent metal-oxide-semiconductor field-effect transistors (MOSFETs) or even conventional homojunction bipolar transistors, e.g., pnp or npn silicon transistors. Because HBTs offer high speed, a high current driving capability, and a low 1/f noise levels, HBTs are becoming popular for use as integrated switching devices and microwave devices in wireless communications systems and sub-systems, satellite broadcast systems, automobile collision avoidance systems, global positioning systems, and other high-frequency applications. One application in which HBT use continues to increase is in the design and manufacture of wireless electronic devices, such as wireless telephones and other like electronic devices that are capable of communicating with a network in a wireless manner.

[0003] As with all wireless electronic devices, power added efficiency (ηPA) and reliability of the device is a critical concern to both the designer and the consumer of the portable wireless device. For example, it is desirable to maximize power added efficiency and reliability of the wireless electronic device by providing the device with one or more HBT power amplifiers that minimize current drain of the device's power source, such as a battery. By providing the wireless electronic device with efficient HBT power amplifiers often results in a desirable increase in the amount of operating time per battery charge of the wireless electronic device. As such, the talk time and standby time of a wireless telephone is improved. Moreover, it is desirable to increase the reliability and speed of the HBT power amplifiers provided in the wireless electronic device by lowering the operating voltages of the HBT power amplifiers.

SUMMARY OF THE INVENTION

[0004] The present invention addresses the above-described problems associated with electronic devices that rely upon a battery for a power source through the use of an GaAs-based HBT power amplifier having a lowered turn-on voltage (VBE). This is accomplished by the introduction of a base layer in an GaAs-based HBT with a lower energy gap, which, in turn, effectively reduces the turn-on voltage of the GaAs-based HBT. Moreover, this configuration effectively improves the power added efficiency (ηPA), which is defined below, of the electronic device.

[0005] The heterojunction bipolar transistor of the present invention includes a collector region having at least one layer disposed on a substrate to form a first stack, a base region having at least one layer disposed on a portion of the collector region to form a second stack. The HBT further includes emitter region having at least one layer disposed over a portion of a base region to form a third stack and a contact region having at least one layer disposed over a portion of the emitter region to form a fourth stack. The lowering of the VBE of the HBT is realized by introducing a base spacer layer having a lowered energy gap in the base region or alternatively by introducing an emitter spacer layer having a lowered energy gap in the emitter region, or alternatively by both. The lowered energy gap of the base spacer layer or the emitter spacer layer allow the HBT to realize a lower turn-on voltage VBE of less than or about 1.0 volts at a collector current density of about 2.0 amps/cm2.

[0006] The present invention also provides a method for forming a compound semiconductor device that realizes a lower turn-on voltage. The method provides for forming on a substrate a collector region having at least one layer to form to a first stack and forming a base region having at least one layer on a portion of the collector region to form a second stack. The method further provides for forming an emitter region having at least one layer on a portion of the base region to form a third stack, and forming a contact region having at least one layer on a portion of the emitter region to form to fourth stack. The forming of the base region includes the forming of an optional base spacer layer. Optionally, the forming of the emitter region includes the forming of an emitter spacer layer. The forming of the base spacer layer or the emitter spacer layer, or both allows the fabricated compound semiconductor device to realize a VBE of less than about 1.0 volts at a collector current density of about 2.0 amps/cm2.

BRIEF DESCRIPTION OF THE DRAWINGS

[0007] The foregoing and other objects, features and advantages of the invention will be apparent from the following description, and from the accompanying drawings, in which like reference characters refer to the same parts throughout the different views. The drawings illustrate principles of the invention and are not to scale.

[0008] FIG. 1 is a cross-sectional view of a heterojunction bipolar transistor according to a first illustrative embodiment of the present invention.

[0009] FIG. 2 is a cross-sectional view of a heterojunction bipolar transistor according to a second illustrative embodiment of the present invention.

[0010] FIG. 3 is a cross-sectional view of a heterojunction bipolar transistor according to a third illustrative embodiment of the present invention.

[0011] FIG. 4 is a cross-sectional view of a heterojunction bipolar transistor according to a fourth illustrative embodiment of the present invention.

[0012] FIG. 5 is an exemplary graphical illustration of a heterojunction bipolar transistor turn-on voltage versus collector current density.

[0013] FIG. 6 is a schematic flow chart diagram illustrating a method for fabricating one or more of the heterojunction bipolar transistors illustrated in FIGS. 1-4.

DETAILED DESCRIPTION OF THE INVENTION

[0014] The compound semiconductor of the present invention advantageously employs either a base spacer layer or an emitter spacer layer, or optionally both, to allow the compound semiconductor device to realize a lower VBE. The VBE realized by the compound semiconductor device of the present invention improves the power added efficiency and the reliability of the device. The improved power added efficiency (ηPA) resulting from the lowered VBE is particularly suitable for applications where the compound semiconductor device operates as a power amplifier and is fabricated from GaAs based material. Specifically, each of the illustrative embodiments described below are directed to a GaAs based HBT device for use in portable or mobile electronic devices, such as cellular telephones, laptop computers with wireless modem, and other like portable consumer devices, or other like or similar wireless communication applications, such as satellites or other wireless communications applications. The compound semiconductor device of the present invention is configurable to suit a selected application as illustrated in the exemplary embodiments described in more detail below.

[0015] The compound semiconductor device of the present invention provides a range of significant benefits to engineers that design electronic devices that are capable of communicating with a network in a wireless manner. The compound semiconductor device of the present invention increases the operating time of the electronic device capable of communicating with a network in a wireless manner if the electronic device uses a battery. The compound semiconductor device of the present invention also improves the power-added efficiency and reliability of power amplifier HBTs fabricated from GaAs by reducing the VBE of the HBT.

[0016] FIG. 1 illustrates a cross-sectional view of an HBT according to a first illustrative embodiment of the present invention. The HBT 10 includes a collector region, a base region, an emitter region, and a contact region. The collector region of the HBT 10 includes a sub-collector layer 12 and a collector layer 14. The base region of the HBT 10 includes a base layer 16 and optionally a base spacer layer 18. In similar fashion, the emitter region of the HBT 10 includes an emitter layer 22 and optionally an emitter spacer layer 20. In like manner, the contact region of the HBT 10 includes a first contact layer 24, and a second contact layer 26. The HBT 10 further includes an emitter electrode 28 formed over a portion of a contact layer 26, base electrodes 30A and 30B formed over portions of the base layer 16, and collector electrodes 32A and 32B formed over portions of the subcollector layer 12.

[0017] In more detail, the sub-collector layer 12 is a GaAs material formed over a substrate and has a thickness of about 500 nm with a donor impurity concentration of about 4×1018 cm −3. The thickness of the sub-collector layer 12 can range from between about 500 nm to about 1,500 nm in 1 nm increments. In similar fashion, the doping concentration of the sub-collector layer 12 can range from between about 3×1018 cm −3 to about 5×1018 cm −3.

[0018] The collector layer 14 is formed of a GaAs material over a portion of the subcollector layer 12 and has a thickness of about 500 nm and a donor impurity concentration of about 1×1016 cm−3. The thickness of the collector layer 14 can range from between about 100 nm to about 2,000 nm in 1 nm increments or decrements. The doping concentration of the collector layer 14 can range from between about 5×1015 cm−3 to about 1×1017 cm−3.

[0019] For the base layer 16, a GaAs material is formed over a portion of the collector layer 14 and is formed to have a thickness of about 70 nm and has an acceptor impurity concentration of about 4×1019 cm−3. The thickness of the base layer 16 can range from between about 20 nm and about 200 nm in increments or decrements of about 1 nm. The impurity concentration in the base layer can range between about 1×1019 to about 1×1020 cm−3

[0020] The base spacer layer 18 is formed of a P+ type InxGa1−xAs material, where x can be up to about 0.3. The base spacer layer 18 is preferably formed of a P+ type InxGa1−xAs material. For example, the base spacer can be In0 15Ga0 85As at a thickness of about 20 nm. Moreover, the base spacer layer 18 can have a thickness in the range between about 0 nm or some nominal thickness and about 40 nm with an acceptor impurity concentration range of about 1×1019 to about 1×1020 cm−3.

[0021] For the emitter spacer layer 20, an N type InxGa1−xP (0.5<x<0.7) material is formed to a thickness of between about 2 nm and about 40 nm with a donor impurity concentration between about 1×1016 and about 1×108 cm−3. The thickness of the emitter spacer layer 20 is kept to less than 40 nm to reduce a space charge recombination current between the emitter region and the base region. The emitter spacer layer 20 is preferably formed of an N type InxGa1−xP material. An emitter spacer xcan be for example In0 6Ga0.4P at a thickness of about 10 nm. The emitter spacer layer 20 is an optional layer in the HBT 10. The emitter spacer layer 20 can be introduced into the HBT 10 in place of the base spacer layer 18 or in conjunction with the base spacer layer 18 to realize a VBE for the HBT 10 of about 1.0 volts at a collector current density of about 2.0 amps/cm2. Those skilled in the art will recognize that the VBE can range from between about 0.8 volts to about 1.0 volts at a collector current density from between about 1.0 amps/cm2 to between about 2.0 amps/cm2.

[0022] For the emitter layer 22, an In0 51Ga0 49P material is N type with impurities in a concentration of about 3×1017 cm−3. The emitter layer 22 is formed to have a thickness of about 50 nm and is formed over a portion of the emitter spacer layer 20. The emitter layer 22 can be formed to have a thickness of between about 50 nm and about 300 nm in increments or decrements of about 1 nm. The donor impurity concentration in the emitter layer can range between about 1×1016 and about 1×1018 cm−3.

[0023] The contact layer 24 is an GaAs material doped with N type impurities in a concentration of about 4×1018 cm−3. The contact layer 24 is formed to have a thickness of about 100 nm. The contact layer 26 is formed from an InxGa1−xAs material, where x=0.0 up to 0.6, doped with N type impurities in a high concentration in excess of about 1×1019 cm−3. It is desirable for the contact layer 26 to be formed from an InxGa1−xAs material doped with N type impurities at a high concentration in excess of 1×1019 cm −3. A contact layer could be InxGa1−xAs where the composition (x) varied linearly from 0 to 0.6 with a total thickness of 100 nm. The thickness of the contact layer 24 can range from between about 50 nm to about 300 nm in increments or decrements of about 1 nm.

[0024] The lowering of the turn-on voltage VBE in the above illustrative embodiment of the compound semiconductor device is accomplished by the introduction of the base spacer layer 18, or the emitter spacer layer 20, or both to lower an energy gap ΔEg of the HBT 10 to values of 1.1-1.38 eV at 300° K. to bring about the turn-on voltage VBE of less than about 1.0 volts at a collector current density of about 2.0 amps/cm2. It is known that the change in energy gap ΔEg between the junction of the base region and the emitter region in the illustrative embodiment of the HBT 10 includes a conduction band energy step ΔEc and a valence band energy step ΔEv. As a consequence of the ΔEg, an energy barrier appears in the conduction band at the junction of the emitter region and the base region, which tends to retard the flow of electrons from the emitter region to the base region in HBTs. Consequently, by lowering the ΔEg of the base spacer layer 18 or alternatively the emitter spacer layer 20, or alternately both, a reduction in the energy barrier at the junction of the base region and the emitter region of the HBT 10 is realized. As such, the lowered ΔEg provided by the base spacer layer 18 or alternatively the emitter spacer layer 20, or alternatively both improves the flow of electrons from the emitter region to the base region of the HBT 10 to realize a lower VBE in the HBT 10 of about 1.0 volts at a collector current density of about 2.0 amps/cm2. As a result, the HBT 10 is able to realize an improvement in power added efficiency and an improvement in reliability. Power added efficiency is defined in equation (1) below.

ηPA=(Power Out−Power In)/(Vsupply×Isupply)×100%  (1)

[0025] FIG. 2 illustrates a cross-sectional view of an HBT according to a second illustrative embodiment of the present invention. The HBT 40 includes a collector region, a base region, an emitter region, and a contact region. The collector region of the HBT 40 includes a sub-collector layer 42 and a collector layer 44. The base region of the HBT 40 includes a base layer 46 and optionally a base spacer layer 48. In similar fashion, the emitter region of the HBT 40 includes an emitter layer 52 and optionally an emitter spacer layer 50. In like manner, the contact region of the HBT 40 includes a first contact layer 54, and a second contact layer 56. The HBT 40 further includes an emitter electrode 58 formed over a portion of the second contact layer 56, base electrodes 60A and 60B formed over portions of the base layer 46, and collector electrodes 62A and 62B formed over portions of the sub-collector layer 42.

[0026] In more detail, the sub-collector layer 42 is a GaAs material formed over a substrate and has a thickness of about 500 nm with a donor impurity concentration of about 4×1018 cm−3. The thickness of the sub-collector layer 42 can range from between about 500 nm and about 1,500 nm in increments or decrements of about 1 nm. Further, the doping concentration of the sub-collector layer 42 can range from between about 3×1018 cm−3 to about 5×1018 cm−3.

[0027] The collector layer 44 is formed of a GaAs material having a thickness of about 500 nm and a low impurity concentration of about 1×1016 cm−3. The collector layer 44 is formed over a portion of the sub-collector layer 42. The thickness of the collector layer 44 can range from between about 100 nm and about 2,000 nm in increments or decrements of about 1 nm. In similar fashion, the doping concentration of the collector layer 44 can range from between about 5×1015 cm−3 to about 1×1017 cm31 3.

[0028] For the base layer 46, a GaAs material is formed over a portion of the collector layer 44 and is formed to have a thickness of about 70 nm with an acceptor impurity concentration of about 4×1019 cm−3. The base layer 46 is formed to have a thickness of between about 20 nm and about 200 nm in increments or decrements of about 1 nm. The impurity concentration in the base layer can range between about 1×1019 and about 1×1020 cm−3 The base spacer layer 48 is formed of a P+ type GaAs1−xSbx (x up to 0.3) material. It is desirable to form the base spacer layer 48 of a P+ type GaAs1−xSbx material. A base spacer can be GaAs0 85Sb0.15 at a thickness of about 20 nm. The base spacer layer 48 has a thickness of between about 0 nm and about 40 nm and has an acceptor impurity concentration between about 1×1019 and about 1×1020 cm31 3The base spacer layer 48 is an optional layer and can be introduced in conjunction with the emitter spacer layer 50 or in place of the emitter spacer layer 50.

[0029] For the emitter spacer layer 50, an N type InxGa1−xP (0.5<x<0.7) material is formed to a thickness of between about 2 nm and about 40 nm with a donor impurity concentration between 1×1016 to about 1×1018 cm−3. The thickness of the emitter spacer layer 50 is kept to less than 40 nm to reduce a space charge recombination current between the emitter region and the base region. The emitter spacer layer 50 is preferably formed of an N type InxGa1−xP material. An emitter spacer could be In0 6Ga0.4P at a thickness of about 10 nm. The emitter spacer layer 50 is an optional layer in the HBT 10. The emitter spacer layer 50 can be introduced into the HBT 40 in place of the base spacer layer 48 or in conjunction with the base spacer layer 48 to realize a VBE for the HBT 40 of about 1.0 volts at a collector current density of about 2.0 amps/cm2. Those skilled in the art will recognize that the VBE can range from between about 0.8 volts to about 1.0 volts at a collector current density from between about 1.0 amps/cm2 to between about 2.0 amps/cm2.

[0030] For the emitter layer 52, an In0.51Ga0 49P material is doped with N type impurities in a concentration of about 3×1017 cm−3. The emitter layer 52 is formed to have a thickness of about 50 nm. The thickness of the emitter layer 52 can range from between about 50 nm to about 300 nm in increments or decrements of about 1 nm. The donor impurity concentration in the emitter layer can range between about 1×1016 and about 1×1018 cm−3.

[0031] The contact 54 is a GaAs material doped with N type impurities in a high concentration of about 4×1018 cm−3. The contact 54 is formed to have a thickness of about 100 nm. The contact 54 can have a thickness of between about 50 nm and about 300 nm in increments or decrements of about 1 nm. The contact layer 56, is formed from an InxGa1−xAs (x=0.0 up to 0.6) material doped with N type impurities in a high concentration in excess of 1×1019 cm−3. The contact layer 56 can be InxGa1−xAs where the composition (x) varied linearly from 0 to 0.6 with a total thickness of 100 nm. The thickness of the contact layer 56 can range from between about 50 nm and about 200 nm in increments or decrements of about 1 nm.

[0032] The lowering of the turn-on voltage VBE in the above illustrative embodiment of the compound semiconductor device is accomplished by the introduction of either the base spacer layer 48 or the emitter spacer layer 50 or both to realize a lowered energy gap ΔEg of about 1.10-1.38 eV at 300° K. in the HBT 40 to realize a turn-on voltage VBE of less than about 1.0 volts at a collector current density of about 2.0 amps/cm2. It is known that the change in energy gap ΔEg between the junction of the base region and the emitter region in the illustrative embodiment of the HBT 40 includes a conduction band energy step ΔEc and a valence band energy step ΔEv. As a consequence of the ΔEg an energy barrier appears in the conduction band at the junction of the emitter region and the base region, which tends to retard the flow of electrons from the emitter region to the base region in HBTs. Consequently, by lowering the ΔEg of the base spacer layer 48 or alternatively the emitter spacer layer 50, a reduction in the energy barrier at the junction of the base region and the emitter region of the HBT 40 is realized. As such, the lowered ΔEg provided by the base spacer layer 48 or alternatively the emitter spacer layer 50 or alternatively both, improves the flow of electrons from the emitter region to the base region of the HBT 40 to realize a VBE in the HBT 40 from between about 0.8 volts to about 1.0 volts at a collector current density from between about 1.0 amps/cm2 to between about 2.0 amps/cm2. Consequently, the HBT 40 is able to realize an improvement in power added efficiency as defined in equation (1) and an improvement in reliability.

[0033] FIG. 3 illustrates a cross-sectional view of an HBT according to a third illustrative embodiment of the present invention. The HBT 70 includes a collector region, a base region, an emitter region, and a contact region. The collector region of the HBT 70 includes a sub-collector layer 72 and a collector layer 74. The base region of the HBT 70 includes a base layer 76 and optionally a base spacer layer 78. In similar fashion, the emitter region of the HBT 70 includes an emitter layer 84, and optionally an emitter spacer layer 80. In like manner, the contact region of the HBT 70 includes a contact 86, and a contact layer 88. The HBT 70 further includes an emitter electrode 90 formed over a portion of the contact layer 88, base electrodes 92A and 92B formed over portions of the base layer 76, and collector electrodes 94A and 94B formed over portions of the sub-collector layer 72.

[0034] In more detail, the sub-collector layer 72 is a GaAs material formed over a substrate and has a thickness of about 500 nm with a donor impurity concentration of about 4×1018 cm−3. The thickness of the sub-collector layer 72 can range from between about 500 nm and about 1,500 nm in increments or decrements of about 1 nm. Moreover, the doping concentration of the sub-collector layer 72 can range from between about 3×1018 cm−3 to about 5×1018 cm−3.

[0035] The collector layer 74 is formed over a portion of the sub-collector layer 72. The formed GaAs material of the collector layer 74 has a thickness of about 500 nm and is doped to have a low donor impurity concentration of about 1×1016 cm−3. The thickness of the collector layer 74 can range from between about 100 nm and about 2,000 nm in increments or decrements of about 1 nm. Furthermore, the doping concentration of the collector layer 74 can range from between about 5×1015 cm−3 to about 1×1017 cm−3.

[0036] The base layer 76 is a GaAs material formed over a portion of the collector layer 74 and is formed to have a thickness of about 70 nm and doped to have an acceptor impurity concentration of about 4×1019 cm−3. The base layer 76 can have a range of thickness from between about 20 nm to about 200 nm in increments or decrements of about 1 nm. The impurity concentration in the base layer can range between about 1×1019 and about 1×1020 cm−3.

[0037] For the base spacer layer 78, a P+ type InyGa1−yAs (y up to 0.3) material is formed over a portion of the base layer 76. It is desirable to form the base spacer layer 78 of a P+type InyGa1−yAs material. A base spacer can be In0.15Ga0.85As at a thickness of about 20 nm. The base spacer layer 78 has a thickness of between about 2 nm and about 40 nm in increments or decrements of about I nm and is doped with an impurity concentration between 1×1019 cm−3 to 1×1020 cm−3. The base spacer layer is an optional layer 78 in the HBT 70.

[0038] For the emitter spacer layer 80, an N type Iny(AlxGa1−x)1−yAs (0.0<y<0.15) (0.0<x<0.3) material. The emitter spacer layer 80 has a thickness of between about 2 nm and about 40 nm in increments or decrements of about 1 nm with an impurity concentration between 1×1016 to 1×1018 cm−3. The emitter spacer layer 80 is preferably formed of an N type Iny(AlxGa1−x)1−yAs material. An emitter spacer could be In0 15(Al0 2Ga0 8)0.85 As at a thickness of 10 nm. The emitter spacer layer 80 is an optional layer in the HBT 70. The emitter spacer layer 80 can be introduced into the HBT 70 in place of the base spacer layer 78 or in conjunction with the base spacer layer 78 to realize a VBE for the HBT 70 from between about 0.8 volts to about 1.0 volts at a collector current density from between about 1.0 amps/cm2 to between about 2.0 amps/cm2.

[0039] The emitter layer 84 is formed of an Al0.3Ga0 7As material over a portion of the emitter spacer layer 80. The emitter layer 84 is doped with N type impurities in a concentration of about 4×1017 cm−3. The emitter layer 84 is formed to have a thickness of about 50 nm. The thickness of the emitter layer 84 can range from between about 50 nm to about 300 nm in increments or decrements of about 1 nm. The impurity concentration in the emitter layer can range between 1×1016 cm−3 to about 1×1018 cm−3. The Al composition of the emitter can range from 0.1 to 0.5.

[0040] The contact 86 is a GaAs material doped with N type impurities in a high concentration of about 4×1018 cm −3. The contact 86 is formed to have a thickness of about 100 nm and is formed over a portion of the emitter layer 84. The thickness of the contact 86 can range from between about 50 nm to about 300 nm in increments or decrements of about 1 nm.

[0041] The contact layer 88, is formed from an InxGa1−xAs (x=0.0 up to 0.6) material doped with N type impurities in a high concentration in excess of 1×1019 cm−3. The contact layer 56 is formed to have a thickness of about 100 nm and is formed over a portion of the contact 86. The thickness of the contact layer 88 can range from between about 50 nm to about 300 nm in increments or decrements of about 1 nm.

[0042] The lowering of the turn-on voltage VBE in the above illustrative embodiment of the compound semiconductor device is accomplished by the introduction of the base spacer layer 78 having a lowered energy gap ΔEg of about of about 1.1-1.38 eV at 300° K. to bring about the turn-on voltage VBE of less than about 1.0 volts at a collector current density of about 2.0 amps/cm2. It is known that the change in energy gap ΔEg between the junction of the base region and the emitter region in the illustrative embodiment of the HBT 70 includes a conduction band energy step ΔEc and a valence band energy step ΔEv. As a consequence of the ΔEg, an energy barrier appears in the conduction band at the junction of the emitter region and the base region, which tends to retard the flow of electrons from the emitter region to the base region in HBTs. Consequently, by lowering the ΔEg of the base spacer layer 78, a reduction in the energy barrier at the junction of the base region and the emitter region of the HBT 70 is realized. As such, the lowered ΔEg provided by the base spacer layer 78 improves the flow of electrons from the emitter region to the base region of the HBT 70 to realize a VBE in the HBT 70 from between about 0.8 volts to about 1.0 volts at a collector current density from between about 1.0 amps/cm2 to between about 2.0 amps/cm2. Consequently, the HBT 70 is able to realize an improvement in power added efficiency as defined in equation (1) and an improvement in reliability.

[0043] The lowering of the turn-on voltage in the illustrative HBT 70 can be further accomplished by introducing the emitter spacer layer 80 instead of the base spacer layer 78 or in conjunction with the base spacer layer 78. The emitter spacer layer 80 having a lower energy gap ΔEg of about 1.1-1.38 eV at 300° K. to realize the turn-on voltage VBE of less than about 1.0 volts at a collector current density of about 2.0 amps/cm2. As discussed above, the emitter spacer layer 80 with the lowered energy gap ΔEg allows the illustrative HBT 70 to increase the flow of electrons from the emitter region to the base region to lower the VBE of the HBT 70. In the illustrative HBT 70 the emitter spacer layer 80 is limited to a thickness of about 40 nm or less in order to reduce a space charge recombination current between the emitter region and the base region.

[0044] FIG. 4 illustrates a cross-sectional view of an HBT according to a fourth illustrative embodiment of the present invention. The HBT 100 includes a collector region, a base region, an emitter region, and a contact region. The collector region of the HBT 100 includes a sub-collector layer 102 and a collector layer 104. The base region of the HBT 100 includes a base layer 106 and optionally a base spacer layer 108. In similar fashion, the emitter region of the HBT 100 includes an emitter layer 114, and optionally an emitter spacer layer 110. In like manner, the contact region of the HBT 100 includes a contact 116, and a contact layer 118. The HBT 100 further includes an emitter electrode 120 formed over a portion of the contact layer 118, base electrodes 122A and 122B formed over portions of the base layer 106, and collector electrodes 124A and 124B formed over portions of the sub-collector layer 102.

[0045] In more detail, the sub-collector layer 102 is a GaAs material formed over a substrate and has a thickness of about 500 nm with a donor impurity concentration of about 4×1018 cm−3. The thickness of the sub-collector layer 102 can range from between about 500 nm and about 1,500 nm in increments or decrements of about 1 nm. Further, the doping concentration of the sub-collector layer 102 can range from between about 3×1018 cm−3 to about 5×1018 cm−3.

[0046] The collector layer 104 is formed over a portion of the sub-collector layer 102. The formed GaAs material of the collector layer 104 has a thickness of about 500 nm and is doped to have a donor impurity concentration of about 1×1016 cm−3. The thickness of the collector layer 74 can range from between about 100 nm and about 2,000 nm in increments or decrements of about 1 nm. Furthermore, the doping concentration of the collector layer 74 can range from between about 5×1015 cm−3 to about 1×1017 cm −3.

[0047] The base layer 106 is a GaAs material formed over a portion of the collector layer 104 and is formed to have a thickness of about 70 nm and doped to have an acceptor impurity concentration of about 4×1019 cm−3. The base layer 106 can have a range of thickness from between about 20 nm to about 200 nm in increments or decrements of about 1 nm. The impurity concentration in the base layer can range between 1×1019 cm3 to about 1×1020 cm−3.

[0048] For the base spacer layer 108, a P+ type GaAs1−xSbx (x up to 0.3) material is optionally formed over a portion of the base layer 106. It is desirable to form the base spacer layer 108 of a P+ type GaAs1−xSbx material. A base spacer could be GaAs0.8Sb0 2 at a thickness of 100 A. The base spacer layer 108 has a thickness of between about 0 nm and about 40 nm with an impurity concentration range of 1×1019 cm−3 to about 1×1020 cm−3.

[0049] For the emitter spacer layer 110, an N type Iny(AlxGa1−x)1−yAs (0.0<y<0.15) (0.0<x<0.3) material. The emitter spacer layer 110 has a thickness of between about 2 nm and about 40 nm and is doped with an impurity concentration between 1×1016 to 1×1018 cm−3. An emitter spacer could be In0 15(Al0.2Ga0 8)0 85 As at a thickness of 10 nm. The emitter spacer layer 110 is preferably formed of an N type Iny(AlxGa1−x)1−yAs material. The emitter spacer layer 110 is an optional layer in the HBT 100. The emitter spacer layer 110 can be introduced into the HBT 100 in place of the base spacer layer 108 or in conjunction with the base spacer layer 108 to realize a VBE for the HBT 100 of about 1.0 volts at a collector current density of about 2.0 amps/cm2.

[0050] The emitter layer 114 is formed of an AlxGa1−xAs (0.0<x<0.3) material over a portion of the emitter buffer layer 112. The emitter layer 114 is doped with N impurities in a concentration of about 4×1017 cm−3. The emitter layer 114 is formed to have a thickness of about 20 nm. The thickness of the emitter layer 114 can range from between about 50 nm to about 300 nm in increments or decrements of about 1 nm. The impurity concentration of the emitter can range from ×1016 to 1×1018 cm−3

[0051] The contact 116 is a GaAs material doped with N type impurities in a high concentration of about 4×1018 cm−3. The contact 116 is formed to have a thickness of about 100 nm and is formed over a portion of the emitter 114. The thickness of the contact 116 can range from between about 50 nm to about 300 nm in increments or decrements of about 1 nm.

[0052] The contact layer 118, is formed from an InxGa1−xAs (x=0.0 up to 0.6) material doped with N+ type impurities in a donor concentration in excess of 1×1019 cm−3. The contact layer 118 is formed to have a thickness of about 100 nm and is formed over a portion of the contact 116. The thickness of the contact layer 118 can range from between about 50 nm to about 200 nm in increments or decrements of about 1 nm.

[0053] The lowering of the turn-on voltage VBE in the above illustrative embodiment of the compound semiconductor device to between about 0.8 volts to about 1.0 volts at a collector current density from between about 1.0 amps/cm 2 to between about 2.0 amps/cm2 is accomplished by the introduction of the base spacer layer 108 having a lowered energy gap ΔEg of 1.1-1.38 eV at 300° K. It is known that the change in energy gap ΔEg between the junction of the base region and the emitter region in the illustrative embodiment of the HBT 100 includes a conduction band energy step ΔEc and a valence band energy step ΔEv. As a consequence of the ΔEg, an energy barrier appears in the conduction band at the junction of the emitter region and the base region, which tends to retard the flow of electrons from the emitter region to the base region in HBTs. Consequently, by lowering the ΔEg of the base spacer layer 108, a reduction in the energy barrier at the junction of the base region and the emitter region of the HBT 100 is realized. As such, the lowered ΔEg provided by the base spacer layer 108 improves the flow of electrons from the emitter region to the base region of the HBT 100 to realize a VBE in the HBT 100 of less than about 1.0 volts at a collector current density of about 2.0 amps/cm2. Consequently, the HBT 100 is able to realize an improvement in power added efficiency as defined in equation (1) and an improvement in reliability.

[0054] The lowering of the turn-on voltage in the illustrative HBT 100 can be further accomplished by introducing the emitter spacer layer 110 in place of the base spacer layer 108, or in conjunction with the base spacer layer 108 to realize an HBT having a lower energy gap ΔEg of 1.1-1.38 eV at about 300° K. between the junction of the base and the emitter. As discussed above, the emitter spacer layer 110 with the lowered energy gap ΔEg allows the illustrative HBT 100 to increase the flow of electrons from the emitter region to the base region to lower the VBE of the HBT 100. In the illustrative HBT 100 the emitter spacer layer 110 is limited to a thickness of about 40 nm or less in order to reduce a space charge recombination current between the emitter region and the base region.

[0055] FIG. 5 is a graphical illustration of VBE versus collector current density for a selected HBT. The graphical illustration of FIG. 5 is merely exemplary and does not reflect either actual or theoretical values for any of the illustrative HBT's described herein. FIG. 5 is merely meant to facilitate understanding of the illustrative embodiments in the present invention.

[0056] FIG. 5 graphically illustrates the dependence of collector current density on VBE for a conventional InGaP/GaAs HBT and a conventional InGaP/GaAsSb double heterojunction bipolar transistor (DHBT). As graphically depicted in FIG. 5, the turn-on voltage or VBE of the conventional InGaP/GaAs HBT is about 1.09 volts at a collector current density of about 1 A/cm2 and the conventional InGaP/GaAsSb DHBT is about 0.914 at a collector current density of about 1 A/cm2. Moreover, as FIG. 5 graphically illustrates in most conventional HBT devices, the collector current density of the devices increases as VBE of the devices increases. In contrast, the illustrative HBT's of the present invention realize a VBE of less than about 1.0 volts at a collector current density of about 2 A/cm2 or less.

[0057] FIG. 6 is a schematic flow chart diagram illustrating the method for forming one of the illustrative compound semiconductor devices of the present invention. On a provided substrate (step 130) a collector region is formed having at least one layer to form a first stack (step 132). Suitable techniques for forming the collector region include metal organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE). Upon formation of the collective region, a base region is formed or grown over a portion of the collector region (step 134). The base region is formed to include at least one layer and forms a second stack. An emitter region is grown or formed over a portion of the base region to form a third stack (step 136). The emitter region is formed to have at least one layer. In similar fashion, a contact region is grown or formed over a portion of the emitter region to form a fourth stack (step 138). The contact region is formed to have at least one layer. The emitter electrode, the base electrodes, and the collector electrodes are formed by metal deposition and liftoff, self-aligned or non-self-aligned, using a materials of Ti, Pt, Au, and Ge. (step 140). Those skilled in the art will recognize that each of the stacks discussed above are capable of being formed by MOCVD or by MBE. Nonetheless, those skilled in the art will recognize that other fabrication methods may be suitable depending on feature sizes or other constraints such as material type.

[0058] Those skilled in art will appreciate that the applications of the various compound semiconductor devices described herein are not limited solely to portable or mobile electronic devices capable of communicating with a network in a wireless manner. For example, the compound semiconductor devices of the present invention are configurable for use in a satellite or in any other electronic system or sub-system concerned with improving power added efficiency and reliability of the system.

[0059] While the present invention has been described with reference to illustrative embodiments thereof, those skilled in the art will appreciate that various changes in form in detail may be made without parting from the intended scope of the present invention as defined in the appended claims.

Claims

1. An emitter based heterojunction bipolar transistor, comprising a collector region having at least one layer disposed on a substrate to form a first stack, a base region having at least one layer disposed on a portion of the collector region to form a second stack, an emitter region having at least one layer disposed over a portion of the base region to form a third stack, and a contact region having at least one layer disposed over a portion of the emitter region to form a fourth stack, wherein the base region and the emitter region allow the emitter based heterojunction bipolar transistor to realize a turn-on voltage VBE of less than about 1.0 volt at a collector current density of about 2.0 amps/cm2.

2. The emitter based heterojunction bipolar transistor of claim 1, wherein the VBE of the transistor ranges from between about 0.8 volts to about 1.0 volts at a collector current density from between about 1.0 amps/cm2 to between about 2.0 amps/cm2.

3. The emitter based heterojunction bipolar transistor of claim 1, wherein the collector region comprises a collector layer, and a sub-collector layer, wherein the sub-collector layer has a relatively heavy concentration of n-type dopant impurities and the collector layer has a relatively light concentration of n-type dopant impurities.

4. The emitter based heterojunction bipolar transistor of claim 1, wherein the base region comprises a base spacer layer having a band gap energy of 1.1-1.38 eV.

5. The emitter based heterojunction bipolar transistor of claim 1, wherein the base region comprises a base layer, the base layer having a band gap energy level Eg of about 1.38 eV at about 300° K. to bring about the turn-on voltage VBE of less than about 1.0 volts at a collector current density of about 2.0 amps/cm2.

6. The emitter based heterojunction bipolar transistor of claim 1, wherein the emitter region comprises an emitter spacer layer, the emitter spacer layer having a thickness sufficient to reduce space charge recombination current in the emitter region, and an emitter layer.

7. The emitter based heterojunction bipolar transistor of claim 1, wherein the emitter region comprises an emitter spacer layer, the emitter spacer layer having a thickness sufficient to reduce space charge recombination current in the emitter region.

8. The emitter based heterojunction bipolar transistor of claim 1, wherein the emitter region comprises an emitter layer.

9. The emitter based heterojunction bipolar transistor of claim 1, wherein the contact region comprises a first contact layer, and a second contact layer.

10. The emitter based heterojunction bipolar transistor of claim 3, wherein the collector layer comprises, GaAs having a thickness of between about 100 nm and about 2,000 nm.

11. The emitter based heterojunction bipolar transistor of claim 3, wherein the collector layer comprises GaAs having a thickness of about 500 nm.

12. The emitter based heterojunction bipolar transistor of claim 3, wherein the sub-collector layer comprises GaAs having a thickness of between about 500 nm and about 1,500 nm.

13. The emitter based heterojunction bipolar transistor of claim 3, wherein the sub-collector layer comprises GaAs having a thickness of in the range between about 100 nm and about 1000 nm.

14. The emitter based heterojunction bipolar transistor of claim 5, wherein the collector comprises GaAs having a thickness of between about 20 nm and about 2000 nm.

15. The emitter based heterojunction bipolar transistor of claim 5, wherein the base layer comprises GaAs having a thickness of about 70 nm.

16. The emitter based heterojunction bipolar transistor of claim 4, wherein the base spacer layer comprises a conductive material selected from one of InyGa1−yAs (0.0≦y≦0.3), and one of GaAs1−xSbx(0.0≦x≦0.3), the base spacer layer having a thickness from between about 0 nm to about 40 nm.

17. The emitter based heterojunction bipolar transistor of claim 7, wherein the emitter spacer layer comprises, a conductive material selected from one of Iny (AlxGa1−x)1−yAs(0<y<0.15) (0<x<0.3) and one of InxGa1−xP (0.5<x<0.7), the emitter spacer layer having a thickness from about 2 nm to about 40 nm.

18. The emitter based heterojunction bipolar transistor of claim 8, wherein the emitter layer comprises a conductive material selected from one of, In0 51Ga0.49P having a thickness between 10 nm to 200 nm and from one of AlxGa1−xAs (0<x<0.3) having a thickness between 10 nm to 200 nm.

19. The emitter based heterojunction bipolar transistor of claim 6, wherein the emitter spacer layer and the emitter layer have a combined thickness of between about 10 nm and about 2000 nm.

20. The emitter based heterojunction bipolar transistor of claim 9, wherein the first contact layer comprises GaAs having a thickness of between about 50 nm to about 300 nm.

21. The emitter based heterojunction bipolar transistor of claim 9, wherein the first contact layer comprises, GaAs having a thickness between 10 nm to 200 nm.

22. The emitter based heterojunction bipolar transistor of claim 9, wherein the second contact layer comprises, InxGa1−xAs (0≦x≦0.6) having a thickness between 50 nm and 200 nm

23. The emitter based heterojunction bipolar transistor of claim 9, wherein the second contact layer comprises, InxGa1−xAs (0≦x≦0.6) having a thickness of about 100 nm.

24. The emitter based heterojunction bipolar transistor of claim 12, wherein the sub-collector layer further comprises, a metalization layer contacting at least a portion of a top surface of the sub-collector layer.

25. The emitter based heterojunction bipolar transistor of claim 14, wherein the base layer further comprises, a metalization layer contacting at least a first portion of a top surface of the base layer.

26. The emitter based heterojunction bipolar transistor of claim 23, wherein the second contact layer further comprises, a metalization layer contacting at least a first portion of a top surface of the second contact layer.

27. A method for forming a compound semiconductor device, the method comprising the steps of forming a collector region having at least one layer on a substrate to form a first stack, forming a base region having at least one layer on a portion of the collector region to form a second stack, forming an emitter region having at least one layer on a portion of the base region to form a third stack, and forming a contact region having at least one layer on a portion of the emitter region to form a fourth stack, wherein the formation of the base region and the emitter region realizes an emitter based heterojunction bipolar transistor having a turn-on voltage VBE of less than about 1.0 volts at a collector current density of about 2.0 amps/cm2.

28. The method of claim 27, wherein the VBE of the formed transistor ranges from between about 0.8 volts to about 1.0 volts at a collector current density from between about 1.0 amps/cm2 to between about 2.0 amps/cm2.

29. The method of claim 27, wherein the formation of the collector region comprises the steps of forming a collector layer, and forming a sub-collector layer, wherein the sub-collector layer when formed has a relatively heavy concentration of n-type dopant impurities and the collector layer when formed has a relatively light concentration of n-type dopant impurities.

30. The method of claim 27, wherein the formation of the base region comprises the steps of forming a base spacer layer; and forming a base layer, the formation of the base layer resulting in the base layer having a band gap energy Eg of about 1.38 eV at about 300° K. to bring about the turn-on voltage VBE of less than about 1.0 volts at a collector current density of about 2.0 amps/cm2.

31. The method of claim 27, wherein the formation of the base region comprises the step of, forming a base spacer layer with a band gap energy of 11-1.38 eV.

32. The method of claim 27, wherein the formation of the base region comprises the steps of forming a base layer, the formation of the base layer resulting in the base layer having a band gap energy Eg of about 1.38 eV at about 300° K. to bring about the turn-on voltage VBE of less than about 1.0 volts at a collector current density of about 2.0 amps/cm2.

33. The method of claim 27, wherein the formation of the emitter region comprises the steps of forming an emitter spacer layer, the formation of the emitter spacer layer resulting in the emitter layer having a thickness sufficient to reduce space charge recombination current in the emitter region, and forming an emitter layer.

34. The method of claim 27, wherein the formation of the emitter region comprises the steps of, forming an emitter layer.

35. The method of claim 27, wherein the formation of the emitter region comprises the steps of forming an emitter spacer layer, the formation of the emitter spacer layer resulting in the emitter layer having a thickness sufficient to reduce space charge recombination current in the emitter region.

36. The method of claim 27, wherein the formation of the contact region comprises the steps of forming a first contact layer, and forming a second contact layer.

37. The method of claim 27, wherein the formation of the collector layer comprises growing of GaAs to a thickness of between about 100 nm and about 2,000 nm.

38. The method of claim 27, wherein the formation of the sub-collector layer comprises growing of GaAs to a thickness of between about 500 nm and about and about 1,500 nm.

39. The method of claim 27, wherein the formation of the base layer comprises growing of GaAs having a thickness of between about 20 nm and about 200 nm.

40. The method of claim 30, wherein the formation of the base spacer layer comprises growing a conductive material selected from one of InyGa1−yAs (0.0≦y≦0.3), and one of GaAs1−xSbx (0.0<x<0.3), the base spacer layer having a thickness from about 0 nm to about 40 nm.

41. The method of claim 33, wherein formation of the emitter spacer layer comprises growing a conductive material selected from one of, Iny (AlxGa1−x)1−yAs (0<y<0.15) (0<x<0.3) and one of InxGa1−xP (0.5<x<0.7), the emitter spacer layer having a thickness from between about 2 nm to about 40 nm.

42. The method of claim 34, wherein formation of the emitter layer comprises growing a conductive material selected from one of, In0 51Ga0.49P to a thickness of about 50 nm and from one of AlxGa1−xAs (0<x<0.3) to a thickness of about 200 nm.

43. The method of claim 36, wherein the formation of the first contact layer comprises growing GaAs to a thickness of between about 50 nm and about 300 nm.

44. The method of claim 36, wherein the formation of the second contact layer comprises, growing of InxGa1−xAs (0≦x≦0.6) to a thickness of between about 50 nm and about 200 nm.

45. The method of claim 38, wherein the formation of the sub-collector layer further comprises the step of forming a metalization layer contacting at least a portion of a top surface of the sub-collector layer.

46. The method of claim 31, wherein the formation of the base layer further comprises the step of forming a metalization layer contacting at least a first portion of a top surface of the base layer.

47. The method of claim 36, wherein the formation of the second contact layer further comprises the step of forming a metalization layer contacting at least a first portion of a top surface of the second contact layer.

48. A compound semiconductor device, comprising: a first GaAs layer: a second GaAs layer formed on the first GaAs layer; a third p-type GaAs layer formed on the second GaAs layer; a p-type InyGa1−yAs layer (0.0≦Y≦0.3) formed on the third GaAs layer; an n type InxGa1−xP layer (0.5<x<0.7) formed on the InyGa1−yAs layer; an n type In0 51Ga0 49P layer formed on the n type InxGa1−xP layer; an n type GaAs layer formed on the n type In0.51Ga0 49P layer; and an n type InxGa1−xAs layer (0.0<x<0.6) formed on the n type GaAs layer.

49. A compound semiconductor device, comprising: a first GaAs layer: a second GaAs layer formed on the first GaAs layer; a third p-type GaAs layer formed on the second GaAs layer; a p-type GaAs1−xSbx layer (0.0<x<0.3) formed on the third GaAs layer; an n type InxGa1−xP layer (0.5<x<0.7) formed on the GaAs1−xSbx layer; an n type In0 51Ga0 49P layer formed on the n type InxGa1−xP layer; an n type GaAs layer formed on the n type In0.51Ga0 49P layer; and an n type InxGa1−xAs layer (0.0<x<0.6) formed on the n type GaAs layer.

50. A compound semiconductor device, comprising: a first GaAs layer: a second GaAs layer formed on the first GaAs layer; a third p-type GaAs layer formed on the second GaAs layer; a p-type InyGa1−yAs layer (0.0≦y≦0.3) formed on the third GaAs layer; an n type Iny(AlxGa1−x)1−yAs layer (0.0<y<0.15) (0.0<x<0.3) formed on the InyGa1−yAs layer; an n type Al0 3Ga0 7As layer formed on the n type Iny(AlxGa1−x)1−yAs layer; an n type AlxGa1−xAs (0.0<x<0.3) layer formed on the n type Al0 3Ga0 7As layer; an n type GaAs layer formed on the n type AlxGa1−xAs layer; and an n type InxGa1−xAs layer (0.0<x<0.6) formed on the n type GaAs layer.

51. A compound semiconductor device, comprising: a first GaAs layer: a second GaAs layer formed on the first GaAs layer; a p-type GaAs layer formed on the second GaAs layer; an p-typeGaAs1−xSbx layer (0.0≦x≦0.3) formed on the third GaAs layer; an n type Iny(AlxGa1−x)1−yAs layer (0.0<y<0.3) (0.0<x<0.3) formed on the GaAs1−xSbx layer; an n type Al0.3Ga0 7As layer formed on the n type Iny(AlxGa0.7As layer; an n type AlxGa1−xAs (0.0<x<0.5) layer formed on the n type Al0 3Ga0.7As layer; an n type GaAs layer formed on the n type AlxGa1−xAs layer; and an n type InxGa1−xAs layer (0.0<x<0.6) formed on the n type GaAs layer.

52. A heterojunction bipolar transistor, comprising, a contact having at least one layer of a first material; an emitter having an emitter spacer of an n type InxGa1−xP (0.5<x<0.7) material; a base having a base spacer of an InyGa1−yAs (0.0≦y≦0.3) material; and a collector having at least one layer of said first material.

53. A heterojunction bipolar transistor, comprising, a contact having at least one layer of a first material; an emitter having an emitter spacer of an n type InxGa1−xP (0.5<x<0.7) material; a base having a base spacer of an GaAs1−xSbx (0.0≦x≦0.3) material; and a collector having at least one layer of said first material.

54. A heterojunction bipolar transistor, comprising, a contact having at least one layer of a first material; an emitter having an emitter spacer of an n type Iny(AlxGa1−x)1−yAs (0.0<y<0.15) (0.0≦x≦0.3) material; a base having a base spacer of an InyGa1−yAs (0.0≦y≦0.3) material; and a collector having at least one layer of said first material.

55. A heterojunction bipolar transistor, comprising, a contact having at least one layer of a first material; an emitter having an emitter spacer of an n type Iny(AlxGa1−x)1−y As (0.0<y<0.3) (0.0<x<0.3) material; a base having a base spacer of an GaAs1−xSbx (0.0≦x≦0.3) material; and a collector having at least one layer of said first material.