Claims
- 1. An epitaxial structure for a single heterojunction bipolar transistor comprising:
- (a) a collector over a semiconductive support, said collector comprising a first semiconductor material;
- (b) a base over said collector, said base comprising a second semiconductor material; and
- (c) an emitter over said base, said emitter comprising about 39 mole percent AlP and about 61 mole percent Sb.
- 2. The epitaxial structure of claim 1 wherein said first semiconductor material comprises InP.
- 3. The epitaxial structure of claim 1 wherein said second semiconductor material comprises InP.
- 4. The epitaxial structure of claim 1 wherein said first semiconductor material and said second semiconductor material comprise InP.
- 5. The epitaxial structure of claim 1 wherein said semiconductive support comprises an InP substrate.
- 6. The epitaxial structure of claim 4 wherein said semiconductive support comprises an InP substrate.
- 7. The epitaxial structure of claim 1 wherein said first semiconductor material comprises an N-type dopant, said second semiconductor material comprises a P-type dopant, and said emitter further comprises an N-type dopant.
- 8. The epitaxial structure of claim 6 wherein said first semiconductor material comprises an N-type dopant, said second semiconductor material comprises a P-type dopant, and said emitter further comprises an N-type dopant.
Parent Case Info
This is a Division of application Ser. No. 08/468,584, filed on Jun. 6, 1995.
US Referenced Citations (3)
Non-Patent Literature Citations (2)
Entry |
Van de Walle, C. G., "Band Lineups and Deformation Potentials in the Model-Solid Theory", Physical Review B, vol. 39, No. 3, pp. 1871-1873 Jan. 1989. |
Chris G. Van de Walle, "Band Lineups and Defomration Potentials in the Model-Solid Theory", Am. Phys. Soc., Phys. Rev. B., vol. 39, No. 3, pp. 1871-1883, Jan. 1989. |
Divisions (1)
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Number |
Date |
Country |
Parent |
468584 |
Jun 1995 |
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