Claims
- 1. An apparatus for performing an inductively-coupled plasma process, said apparatus comprising:
- a chamber;
- means for keeping an inside of said chamber vacuous;
- a sample stage provided in said chamber to support an object to be processed;
- gas introducing means for introducing gas into said chamber;
- a radio-frequency power source for generating radio-frequency power;
- a coil having a length which is approximately an integral multiple of 1/4 of a wavelength of said radio-frequency power, said coil generating a magnetic field for changing the gas introduced into said chamber into a plasma when the radio-frequency power from said radio-frequency power source is supplied thereto and a radio-frequency current flows therethrough, said coil having one end connected to said radio-frequency power source via an impedance matcher and the other end grounded,
- wherein said object comprises a semiconductor substrate, said object being processed using said gas changed into said plasma by said magnetic field.
- 2. An apparatus for performing an inductively-coupled plasma process according to claim 1, further comprising
- voltage applying means for applying, to said sample stage, at least one of a radio-frequency voltage and a constant voltage which are electrically insulated from said chamber.
- 3. An apparatus for performing an inductively-coupled plasma process according to claim 2, further comprising:
- a first pulse modulator for performing pulse modulation with respect to the radio-frequency power generated from said radio-frequency power source; and
- a second pulse modulator for performing pulse modulation with respect to the voltage applied by said voltage applying means.
- 4. A method of performing an inductively-coupled plasma process, said method comprising the steps of:
- placing an object to be processed on a sample stage provided in a chamber having an inside held under vacuum;
- introducing gas into said chamber;
- applying radio-frequency power generated from a radio-frequency power source to a coil having a length which is approximately an integral multiple of 1/4 of a wavelength of said radio-frequency power, said coil having one end connected to said radio-frequency power source via an impedance matcher and the other end grounded;
- generating a magnetic field around said coil with a radio-frequency current flowing through said coil;
- changing the gas introduced into said chamber into a plasma with the magnetic field generated around said coil; and
- processing the object to be processed placed on said sample stage with the gas changed into the plasma.
- 5. A method of performing an inductively-coupled plasma process according to claim 4, further comprising the step of:
- applying, to said sample stage, at least one of a radio-frequency voltage and a constant voltage which are electrically insulated from said chamber.
- 6. A method of performing an inductively-coupled plasma process according to claim 5, further comprising the steps of:
- performing pulse modulation with respect to the radio-frequency power applied to said coil; and
- performing pulse modulation with respect to the voltage applied to said sample stage.
Priority Claims (1)
Number |
Date |
Country |
Kind |
8-039436 |
Feb 1997 |
JPX |
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Parent Case Info
This is a Divisional of U.S. patent application Ser. No. 08/807,853, filed Feb. 26, 1997 now abandoned.
US Referenced Citations (15)
Foreign Referenced Citations (1)
Number |
Date |
Country |
4-230999 |
Sep 1992 |
JPX |
Divisions (1)
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Number |
Date |
Country |
Parent |
807853 |
Feb 1997 |
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