APPARATUS AND METHOD OF MANUFACTURE FOR AN IMAGER EQUIPPED WITH A CROSS-TALK BARRIER

Abstract

An imager apparatus and associated starting material are provided. In one embodiment, an imager is provided including a silicon layer of a first conductivity type acting as a junction anode. Such silicon layer is adapted to convert light to photoelectrons. Also included is a semiconductor well of a second conductivity type formed in the silicon layer for acting as a junction cathode. Still yet, a barrier is formed adjacent to the semiconductor well. In another embodiment, a starting material is provided including a first silicon layer and an oxide layer disposed adjacent to the first silocon layer. Also included is a second silicon layer disposed adjacent to the oxide layer opposite the first silicon layer. Such second silicon layer is further equipped with an associated passivation layer and/or barrier.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates a cross-section of an imager apparatus, in accordance with one embodiment.

FIG. 2A shows an exemplary cross-section of the barrier of FIG. 1 that is taken along line 2-2 of FIG. 1, in accordance with another embodiment.

FIG. 2B shows another exemplary cross-section of the barrier of FIG. 1 that is taken along line 2-2 of FIG. 1, in accordance with yet another embodiment.

FIG. 3 illustrates a method for manufacturing a starter material and a resultant imager, in accordance with another embodiment.

FIGS. 4A-4H illustrate various stages of processing, in accordance with the method of FIG. 3.

Claims

1. An apparatus, comprising: a silicon layer of a first conductivity type for acting as a junction anode, the silicon layer adapted to convert light to photoelectrons;a semiconductor well of a second conductivity type formed in the silicon layer for acting as a junction cathode; anda barrier formed adjacent to the semiconductor well.

2. The apparatus of claim 1, wherein the barrier includes a continuous barrier surrounding the semiconductor well.

3. The apparatus of claim 1, wherein the barrier includes a substantially circular cross-section.

4. The apparatus of claim 1, wherein the barrier includes a substantially rectangular cross-section.

5. The apparatus of claim 1, wherein the barrier is of the first conductivity type.

6. The apparatus of claim 1, wherein the barrier serves to reduce cross-talk.

7. The apparatus of claim 1, wherein the barrier serves to reduce diffusion cross-talk.

8. The apparatus of claim 1, and further comprising a passivation layer disposed adjacent to the silicon layer.

9. The apparatus of claim 8, and further comprising an anti-reflection layer disposed adjacent to the passivation layer.

10. The apparatus of claim 9, and further comprising at least one color filter layer disposed adjacent to the anti-reflection layer.

11. The apparatus of claim 1, wherein the apparatus includes a back-illuminated imager.

12. The apparatus of claim 11, wherein the imager includes a charge coupled device (CCD) imager.

13. The apparatus of claim 11, wherein the imager includes a complimentary metal-oxide semiconductor (CMOS) imager.

14. A starting material, comprising: a first silicon layer;an oxide layer disposed adjacent to the first silicon layer; anda second silicon layer disposed adjacent to the oxide layer opposite the first silicon layer, the second silicon layer having at least one of an associated passivation layer and barrier.

15. The starting material of claim 14, wherein the passivation layer is included and is disposed adjacent to the second silicon layer.

16. The starting material of claim 14, wherein the barrier is layer is included and is disposed adjacent to the second silicon layer.

17. The starting material of claim 14, wherein the starting material is adapted for use in the manufacture of an imager.

18. The starting material of claim 14, wherein the first silicon layer includes a support silicon layer.

19. The starting material of claim 14, wherein the second silicon layer includes a device silicon layer.

20. A method, comprising: providing a silicon layer of a first conductivity type acting as a junction anode, the silicon layer adapted to convert light to photoelectrons; andforming a semiconductor well of a second conductivity type in the silicon layer for acting as a junction cathode;wherein a barrier is formed in the silicon layer adjacent to the semiconductor well.