The invention relates to immersion lithography apparatus and methods, and particularly to apparatus and methods for recovering immersion fluid.
A typical lithography apparatus includes a radiation source, a projection optical system and a substrate stage to support and move a substrate to be imaged. A radiation-sensitive material, such as a resist, is coated onto the substrate surface before the substrate is placed on the substrate stage. During operation, radiation energy from the radiation source is used to project an image defined by an imaging element through the projection optical system onto the substrate. The projection optical system typically includes a plurality of lenses. The lens or optical element closest to the substrate can be referred to as the last or final optical element.
The projection area during exposure is typically much smaller than the surface of the substrate. The substrate therefore is moved relative to the projection optical system in order to pattern the entire surface of the substrate. In the semiconductor industry, two types of lithography apparatus are commonly used. With so-called “step-and-repeat” apparatus, the entire image pattern is projected at one moment in a single exposure onto a target area of the substrate. After the exposure, the substrate is moved or “stepped” in the X and/or Y direction(s) and a new target area is exposed. This step-and-repeat process is performed multiple times until the entire substrate surface is exposed. With scanning type lithography apparatus, the target area is exposed in a continuous or “scanning” motion. For example, when the image is projected by transmitting light through a reticle or mask, the reticle or mask is moved in one direction while the substrate is moved in either the same or the opposite direction during exposure of one target area. The substrate is then moved in the X and/or Y direction(s) to the next scanned target area. The process is repeated until all of the desired target areas on the substrate have been exposed.
Lithography apparatus are typically used to image or pattern semiconductor wafers and flat panel displays. The word “substrate” as used herein is intended to generically mean any workpiece that can be patterned including, but not limited to, semiconductor wafers and flat panel displays.
Immersion lithography is a technique that can enhance the resolution of lithography exposure apparatus by permitting exposure to take place with a numerical aperture (NA) that is greater than the NA that can be achieved in conventional “dry” lithography exposure apparatus having a similar optical system. By filling the space between the final optical element of the projection system and the resist-coated substrate, immersion lithography permits exposure with light that would otherwise be internally reflected at the optic-air interface. Numerical apertures as high as the index of the immersion fluid (or of the resist or lens material, whichever is least) are possible in immersion lithography systems. Liquid immersion also increases the substrate depth-of-focus, that is, the tolerable error in the vertical position of the substrate, by the index of the immersion fluid compared to a dry system having the same numerical aperture. Immersion lithography thus can provide resolution enhancement without actually decreasing the exposure light wavelength. Thus, unlike a shift in the exposure light wavelength, the use of immersion would not require the development of new light sources, optical materials (for the illumination and projection systems) or coatings, and can allow the use of the same or similar resists as conventional “dry” lithography at the same wavelength. In an immersion system in which only the final optical element of the projection system and its housing and the substrate (and perhaps portions of the stage as well) are in contact with the immersion fluid, much of the technology and design developed for dry lithography can carry over directly to immersion lithography.
However, because the substrate moves rapidly in a typical lithography system, the immersion liquid in the immersion area including the space between the projection system and the substrate tends to be carried away from the immersion area. If the immersion liquid escapes from the immersion area, that liquid can interfere with operation of other components of the lithography system. One way to recover the immersion liquid and prevent the immersion liquid from contaminating the immersion lithography system is described in US2006/0152697 A1, the disclosure of which is incorporated herein by reference in its entirety. Also see US2007/0222967 A1, the disclosure of which is incorporated herein by reference in its entirety.
The systems described in US2006/0152697 A1 and US2007/0222967 A1 include an immersion liquid confinement member. The immersion liquid confinement member includes an outlet through which immersion liquid is recovered (collected) from the immersion area. The outlet is covered by a liquid-permeable member such as a mesh or porous member. A vacuum control unit applies suction to a chamber associated with the outlet so as to draw the immersion liquid on the substrate through the liquid-permeable member and the outlet. It is important to control the suction force applied to the liquid-permeable member.
In the systems described above, there are a limited number of outlets in the immersion liquid confinement member. Due to the limited number of outlets, areas of stagnated liquid occur in the chamber associated with the outlet. These areas of stagnated liquid can be caused, for example, by eddy currents in the liquid that trap the liquid in certain areas of the chamber. During normal operation of an immersion lithography system, particles from the resist and the topcoat on the wafer may leech into the immersion fluid. As the immersion fluid is drawn into the chamber through the liquid-permeable member, some of the liquid containing the particles stagnates in the certain areas of the chamber due to the above-mentioned eddy currents. The particles can collect in the areas of the chamber in which the liquid stagnates, and such particles can pass back through the liquid-permeable member to contaminate the liquid that contacts the substrate and the final optical element of the projection system. Such contamination can lead to defects in the devices produced by the lithography system. It is therefore important to remove any particles from the immersion fluid quickly and to reduce liquid stagnation in the chamber associated with the outlet.
According to aspects of the invention, an immersion liquid confinement apparatus includes a confinement member having a liquid-permeable member to remove liquid from an immersion area that includes a gap between a projection system and an object (such as a substrate, a substrate holding table or both) in an immersion lithography system. The liquid-permeable member covers an outlet in the confinement member and has a first surface that faces the object and a second surface opposite the first surface and which is in contact with a first chamber. The confinement member includes at least one liquid inlet within the chamber through which a liquid is introduced into the chamber.
Introducing liquid into the liquid recovery chamber prevents liquid from stagnating within the chamber and thus flushes recovered liquid and particles that have passed through the liquid-permeable member out of the chamber.
According to another aspect of the invention, the confinement member can include two or more liquid inlets within the chamber.
In some embodiments, the confinement member includes at least one fluid outlet within the chamber through which fluid is removed from the chamber, the at least one liquid inlet being disposed within the chamber spaced away from the at least one fluid outlet.
The liquid inlet can be disposed at an outer periphery of the chamber and/or in at least one wall of the chamber.
In some embodiments, the liquid inlet can be located at a position in the chamber where the immersion liquid that has passed through the liquid-permeable member stagnates.
In some embodiments, the confinement member can include an immersion liquid inlet that is outside of the chamber and that provides immersion liquid to the aperture through which the patterned image is projected onto the object.
According to preferred embodiments, a vacuum system is coupled to the chamber. The vacuum system, coupled to the chamber, draws the immersion liquid from the immersion area into the chamber through the liquid-permeable member so that the liquid flows from the first surface of the liquid-permeable member to the second surface of the liquid-permeable member. Liquid is conveyed from the chamber to the vacuum system via a fluid outlet of the chamber.
The chamber of the confinement member can include corners and the at least one liquid inlet can be configured to provide liquid to the corners of the chamber.
The liquid-permeable member can be a mesh or a porous member such as a sponge or a plate having holes extending through the plate.
Other aspects of the invention relate to an immersion lithography apparatus having a projection system, a movable stage that is movable to a position below the projection system and that holds an object such as a substrate, and a confinement member according to aspects of the invention.
Other aspects of the invention relate to methods of manufacturing devices using the immersion lithography apparatus.
The invention will be described in conjunction with the following drawings of exemplary embodiments in which like reference numerals designate like elements, and in which:
The illumination source of the lithography system can be a light source such as, for example, a mercury g-line source (436 nm) or i-line source (365 nm), a KrF excimer laser (248 nm), an ArF excimer laser (193 nm) or a F2 laser (157 nm). The projection system 14 projects and/or focuses the light passing through the reticle onto the substrate 26. Depending upon the design of the exposure apparatus, the projection system 14 can magnify or reduce the image illuminated on the reticle. It also could be a 1× magnification system.
When far ultraviolet radiation such as from the excimer laser is used, glass materials such as silica glass and calcium fluoride that transmit far ultraviolet rays can be used in the projection system 14. The projection system 14 can be catadioptric, completely refractive or completely reflective.
With an exposure device, use of the catadioptric type optical system can be considered. Examples of the catadioptric type of optical system are shown in U.S. Pat. No. 5,668,672 and U.S. Pat. No. 5,835,275. In these cases, the reflecting optical device can be a catadioptric optical system incorporating a beam splitter and concave mirror. U.S. Pat. No. 5,689,377 also uses a reflective-refracting type of optical system incorporating a concave mirror, etc., but without a beam splitter, and also can be employed with this invention. The disclosures of the above-mentioned U.S. patents are incorporated herein by reference in their entireties.
The liquid confinement member 18 includes at least one (and preferably more than one) liquid supply inlets 30 through which the immersion liquid 80 is supplied to the immersion area. The liquid is supplied to the supply inlets 30 through a supply path, one end of which is connected to a liquid supply 15 and the other end of which is connected to an inlet manifold of the liquid confinement member 18. The liquid supplied to the supply inlets 30 reaches the substrate 26 after passing through aperture 35 disposed centrally in the confinement member 18. As shown in
In the
Although the outlet 40 (and thus also the liquid-permeable member 52) is a continuous groove in
As illustrated in
In the embodiment illustrated in
Although the liquid inlet 53 is illustrated as being substantially horizontal in
Liquid can be either continuously supplied through liquid inlet 53 to the chamber 42 or can be intermittently supplied to the chamber 42. For example, a valve can be provided between the liquid supply and the liquid inlet(s) 53 to control the flow of liquid through liquid inlet(s) 53.
The chamber 42 communicates with a vacuum system V1 that applies a suction force to the chamber 42 via the fluid outlet(s) 54. The suction force is sufficient to draw immersion liquid through the liquid-permeable member 52 into the chamber 42. The vacuum system V1 is controlled so that the suction force applied to the liquid-permeable member 52 is maintained below the bubble point of the liquid-permeable member 52. That is, the vacuum system V1 controls a pressure in the chamber 42 such that substantially only liquid is removed from the immersion area and/or from the surface of the substrate 26 (and/or the surface of the substrate holder) through the liquid-permeable member 52, but not gas from the surface of the substrate 26 (and/or the surface of the substrate holder). The vacuum system V1 causes the liquid to be removed from chamber 42.
The manner in which the liquid confinement member 18 is controlled to remove liquid now will be described.
A system such as the system described in US2006/0152697 A1 can be used. The system of US2006/0152697 A1 is similar to what is shown in
In certain embodiments, the immersion fluid is a liquid having a high index of refraction. In different embodiments, the liquid may be pure water, or a liquid including, but not limited to, cedar oil, fluorine-based oils, “Decalin” or “Perhydropyrene.”
The liquid-permeable member 52 may be a porous member such as a mesh or may be formed of a porous material having holes typically with a size smaller than 150 μm. For example, the porous member may be a wire mesh including woven pieces or layers of material made of metal, plastic or the like, a porous metal, a porous glass, a porous plastic, a porous ceramic, a sponge or a sheet of material having chemically etched holes (for example, by photo-etching). In certain embodiments, the vacuum system V1 may be controlled so that the suction force applied to the liquid-permeable member 52 is maintained at or above the bubble point of the liquid-permeable member 52. That is, the vacuum system V1 may control a pressure in the chamber 42 such that a mixture of liquid and gas is removed from the immersion area and/or from the surface of the substrate 26 (and/or the surface of the substrate holder) through the liquid-permeable member 52.
The use of the exposure apparatus described herein is not limited to a photolithography system for semiconductor manufacturing. The exposure apparatus, for example, can be used as an LCD photolithography system that exposes a liquid crystal display device pattern onto a rectangular glass plate, or a photolithography system for manufacturing a thin film magnetic head.
Semiconductor devices can be fabricated using the above-described systems, by the process shown generally in
At each stage of wafer processing, when the above-mentioned preprocessing steps have been completed, the following post-processing steps are implemented. During post-processing, first, in step 815 (photoresist formation step), photoresist is applied to a wafer. Next, in step 816 (exposure step), the above-mentioned exposure device is used to transfer the circuit pattern of a mask (reticle) to a wafer. Then in step 817 (developing step), the exposed wafer is developed, and in step 818 (etching step), parts other than residual photoresist (exposed material surface) are removed by etching. In step 819 (photoresist removal step), unnecessary photoresist remaining after etching is removed. Multiple circuit patterns are formed by repetition of these preprocessing and post-processing steps.
A photolithography system (an exposure apparatus) according to the embodiments described herein can be built by assembling various subsystems in such a manner that prescribed mechanical accuracy, electrical accuracy, and optical accuracy are maintained. In order to maintain the various accuracies, prior to and following assembly, every optical system is adjusted to achieve its optical accuracy. Similarly, every mechanical system and every electrical system are adjusted to achieve their respective mechanical and electrical accuracies. The process of assembling each subsystem into a photolithography system includes providing mechanical interfaces, electrical circuit wiring connections and air pressure plumbing connections between each subsystem. Each subsystem also is assembled prior to assembling a photolithography system from the various subsystems. Once a photolithography system is assembled using the various subsystems, a total adjustment is performed to make sure that accuracy is maintained in the complete photolithography system. Additionally, it is desirable to manufacture an exposure system in a clean room where the temperature and cleanliness are controlled.
While the invention has been described with reference to preferred embodiments thereof, it is to be understood that the invention is not limited to the preferred embodiments or constructions. The invention is intended to cover various modifications and equivalent arrangements. In addition, while the various elements of the preferred embodiments are shown in various combinations and configurations, that are exemplary, other combinations and configurations, including more, less or only a single element, are also within the spirit and scope of the invention.
This application claims the benefit of U.S. Provisional Patent Application No. 61/202,432 filed Feb. 27, 2009, the disclosure of which is incorporated herein by reference in its entirety.
Number | Date | Country | |
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61202432 | Feb 2009 | US |