Claims
        
                - 1. A memory controller, comprising: 
a chip-select-interface controller, the chip-select-interface controller configured to communicate with at least one chip-select-interface memory; and a synchronous dynamic random-access-memory (SDRAM)-interface controller, the SDRAM-interface controller configured to communicate with at least one SDRAM, the SDRAM-interface controller further configured to provide a plurality of interface signals to the at least one SDRAM via a dedicated port.
- 2. The memory controller of claim 1, wherein the plurality of interface signals comprises an SDRAM address/control signal.
- 3. The memory controller of claim 2, wherein the SDRAM address/control signal serves as address-bit 10 of an address bus of the memory controller during memory transactions with the at least one SDRAM.
- 4. The memory controller of claim 3, wherein the SDRAM address/control signal further serves as a control signal that facilitates a refresh operation of the at least one SDRAM.
- 5. The memory controller of claim 4, wherein the plurality of interface signals further comprises a row-address strobe signal, a column-address strobe signal, and a write-enable signal.
- 6. The memory controller of claim 5, further configured to communicate via the address bus a plurality of address signals to the at least one SDRAM and to the at least one chip-select-interface memory.
- 7. The memory controller of claim 6, wherein the plurality of address signals correspond to bits 0 through 9 and bits 11 through K of the address bus, wherein K+1 represents the width of the address bus.
- 8. The memory controller of claim 7, further configured to provide to the at least one chip-select-interface memory an address signal that corresponds to bit 10 of the address bus.
- 9. The memory controller of claim 8, further configured to provide the plurality of address signals corresponding to bits 0 through 9 and 11 through K of the address bus by multiplexing (i) a set of address signals provided by the a chip-select-interface controller and (ii) a set of address signals provided by the random-access-memory-interface controller.
- 10. The memory controller of claim 9, wherein the SDRAM address/control signal facilitates the refresh operation of the at least one SDRAM by serving as a precharge select control signal.
- 11. The memory controller of claim 10, wherein the at least one SDRAM comprises a double-data-rate SDRAM.
- 12. The memory controller of claim 11, further configured to communicate via a data bus with the at least one chip-select-interface memory and with the at least one SDRAM.
- 13. A memory controller, comprising: 
a chip-select-interface controller, the chip-select-interface controller configured to control chip-select-interface memories; a synchronous dynamic random-access-memory (SDRAM)-interface controller, the SDRAM controller configured to control SDRAMs; and an interface circuitry, the interface circuitry configured to couple the chip-select-interface controller to at least one chip-select-interface memory via a bus, the interface circuitry further configured to couple the SDRAM-interface controller to at least one SDRAM via the bus, wherein the interface circuitry communicates an SDRAM address/control signal to the at least one SDRAM.
- 14. The memory controller of claim 13, wherein the SDRAM address/control signal serves as address-bit 10 of the bus during memory transactions with the at least one SDRAM.
- 15. The memory controller of claim 14, wherein the SDRAM address/control signal further serves as a control signal that facilitates a refresh operation the at least one SDRAM.
- 16. The memory controller of claim 15, wherein the interface circuitry comprises a first multiplexer, the first multiplexer configured to receive (i) a first set of address signals from the chip-select-interface controller and (ii) a second set of address signals from the SDRAM-interface controller, the first multiplexer further configured to selectively provide one of the first and second sets of address signals to the bus.
- 17. The memory controller of claim 16, wherein the interface circuitry provides to the at least one SDRAM a row-address strobe signal, a column-address strobe signal, and a write-enable signal via a dedicated port.
- 18. The memory controller of claim 17, wherein the SDRAM address/control signal further serves as a control signal provided to the at least one SDRAM in preparation for the refresh operation of the at least one SDRAM.
- 19. The memory controller of claim 18, wherein the at least one SDRAM includes a double-data-rate SDRAM.
- 20. A data-processing system, comprising: 
a processor, the processor configured to receive, decode, and execute instructions; at least one synchronous dynamic random-access memory (SDRAM), the at least one SDRAM configured to store and retrieve data; and a memory controller coupled to the processor and to at least one SDRAM, the memory controller configured to communicate with the at least one SDRAM via a dedicated command port, wherein the dedicated command port communicates a plurality of interface signals to the at least one SDRAM, and wherein the plurality of interface signals comprises an SDRAM address/control signal.
- 21. The memory controller of claim 20, wherein the SDRAM address/control signal serves as address-bit 10 of an address bus of the memory controller during memory read, write, and activate transactions with the at least one SDRAM.
- 22. The memory controller of claim 21, wherein the SDRAM address/control signal further in serves as a control provided to the at least one SDRAM in preparation for a refresh operation of the at least one SDRAM.
- 23. The memory controller of claim 22, wherein the plurality of interface signals further comprises a row-address strobe signal, a column-address strobe signal, and a write-enable signal.
- 24. The memory controller of claim 23, further configured to communicate via the address bus a plurality of address signals to the at least one SDRAM and to at least one chip-select-interface memory.
- 25. The memory controller of claim 24, wherein the plurality of address signals comprises address signals for bits 0 through 9 and bits 11 through K of the address bus, wherein K+1 represents the width of the address bus.
- 26. The memory controller of claim 25, further configured to provide to the at least one chip-select-interface memory an address signal for bit 10 of the address bus.
- 27. The memory controller of claim 26, wherein the at least one SDRAM comprises a double-data-rate SDRAM.
- 28. A method of communicating with memory circuits, comprising: 
communicating with at least one chip-select-interface memory via a chip-select-interface controller; and communicating with at least one synchronous dynamic random-access memory (SDRAM) via an SDRAM-interface controller, wherein the SDRAM-interface controller provides a plurality of interface signals to the at least one SDRAM via a dedicated port.
- 29. The method of claim 28, wherein the plurality of interface signals comprises an SDRAM address/control signal.
- 30. The method of claim 29, further comprising using the SDRAM address/control signal as address-bit 10 of an address bus of the memory controller during memory transactions with the at least one SDRAM.
- 31. The method of claim 30, further comprising using the SDRAM address/control signal as a control, wherein the SDRAM address/control signal facilitates a refresh operation of the at least one SDRAM.
- 32. The method of claim 31, wherein the plurality of interface signals further comprises a row-address strobe signal, a column-address strobe signal, and a write-enable signal.
- 33. The method of claim 32, further comprising communicating via the address bus a plurality of address signals to the at least one SDRAM and to the at least one chip-select-interface memory.
- 34. The method of claim 33, wherein the plurality of address signals comprises address signals for bits 0 through 9 and bits 11 through K of the address bus, wherein K+1 represents the width of the address bus.
- 35. The method of claim 34, further comprising providing to the at least one chip-select-interface memory an address signal as bit 10 of the address bus.
- 36. The method of claim 35, further comprising multiplexing a set of address signals provided by the a chip-select-interface controller and a set of address signals provided by the SDRAM-interface controller to provide the plurality of address signals as bits 0 through 9 and 11 through K of the address bus.
- 37. The method of claim 36, further comprising using the SDRAM address/control signal as a precharge select control signal.
- 38. The method of claim 37, wherein the at least one SDRAM comprises a double-data-rate SDRAM.
- 39. The method of claim 38, further comprising communicating via a data bus with the at least one chip-select-interface memory and with the at least one SDRAM.
- 40. A method of controlling memory circuits, comprising: 
providing a chip-select-interface controller, the chip-select-interface controller configured to control chip-select-interface memories; providing a synchronous random-access-memory (SDRAM)-interface controller, the SDRAM-interface controller configured to control SDRAMs; using the chip-select-interface controller to communicate with at least one chip-select-interface memory via an interface circuitry coupled to a bus; using the SDRAM-interface controller to communicate with at least one SDRAM via the interface circuitry and the bus; and communicating an SDRAM address/control signal to the at least one SDRAM via the interface circuitry.
- 41. The method of claim 40, further comprising using the SDRAM address/control signal as address-bit 10 of the bus during memory transactions with the at least one SDRAM.
- 42. The method of claim 41, further comprising using the SDRAM address/control signal as a control signal that facilitates a refresh operation of the at least one SDRAM.
- 43. The method of claim 42, further comprising: 
receiving a first set of address signals from the chip-select-interface controller; receiving a second set of address signals from the SDRAM-interface controller; and multiplexer the first and second address signals to selectively provide one of the first and second sets of address signals to the bus.
- 44. The method of claim 43, further comprising communicating to the at least one SDRAM a row-address strobe signal, a column-address strobe signal, and a write-enable signal via a dedicated port.
- 45. The method of claim 44, further comprising facilitating the refresh operation of the at least one SDRAM by providing the SDRAM address/control signal to the at least one SDRAM in preparation for the refresh operation of the at least one SDRAM.
- 46. The method of claim 45, wherein the at least one SDRAM includes a double-data-rate SDRAM.
CROSS-REFERENCE TO RELATED APPLICATIONS
        [0001] The present patent application relates to concurrently filed, commonly owned U.S. patent application Ser. No. _______, Attorney Docket No. ZILG525, titled “Apparatus and Methods for Programmable Interfaces in Memory Controllers.” The present patent application incorporates by reference the above patent application.