The invention relates to immersion lithography apparatus and methods, and particularly to apparatus and methods for recovering immersion fluid.
A typical lithography apparatus includes a radiation source, a projection optical system and a substrate stage to support and move a substrate to be imaged. A radiation-sensitive material, such as a resist, is coated onto the substrate surface before the substrate is placed on the substrate stage. During operation, radiation energy from the radiation source is used to project an image defined by an imaging element through the projection optical system onto the substrate. The projection optical system typically includes a plurality of lenses. The lens or optical element closest to the substrate can be referred to as the last or final optical element.
The projection area during exposure is typically much smaller than the surface of the substrate. The substrate therefore is moved relative to the projection optical system in order to pattern the entire surface of the substrate. In the semiconductor industry, two types of lithography apparatus are commonly used. With so-called “step-and-repeat” apparatus, the entire image pattern is projected at one moment in a single exposure onto a target area of the substrate. After the exposure, the substrate is moved or “stepped” in the X and/or Y direction(s) and a new target area is exposed. This step-and-repeat process is performed multiple times until the entire substrate surface is exposed. With scanning type lithography apparatus, the target area is exposed in a continuous or “scanning” motion. For example, when the image is projected by transmitting light through a reticle or mask, the reticle or mask is moved in one direction while the substrate is moved in either the same or the opposite direction during exposure of one target area. The substrate is then moved in the X and/or Y direction(s) to the next scanned target area. The process is repeated until all of the desired target areas on the substrate have been exposed.
Lithography apparatus are typically used to image or pattern semiconductor wafers and flat panel displays. The word “substrate” as used herein is intended to generically mean any work piece that can be patterned including, but not limited to, semiconductor wafers and flat panel displays.
Immersion lithography is a technique that can enhance the resolution of lithography exposure apparatus by permitting exposure to take place with a numerical aperture (NA) that is greater than the NA that can be achieved in conventional “dry” lithography exposure apparatus. By filling the space between the final optical element of the projection system and the resist-coated substrate, immersion lithography permits exposure with light that would otherwise be internally reflected at the optic-air interface. Numerical apertures as high as the index of the immersion fluid (or of the resist or lens material, whichever is least) are possible in immersion lithography systems. Liquid immersion also increases the substrate depth-of-focus, that is, the tolerable error in the vertical position of the substrate, by the index of the immersion fluid compared to a dry system having the same numerical aperture. Immersion lithography thus can provide resolution enhancement without actually decreasing the exposure light wavelength. Thus, unlike a shift in the exposure light wavelength, the use of immersion would not require the development of new light sources, optical materials (for the illumination and projection systems) or coatings, and can allow the use of the same or similar resists as conventional “dry” lithography at the same wavelength. In an immersion system in which only the final optical element of the projection system and its housing and the substrate (and perhaps portions of the stage as well) are in contact with the immersion fluid, much of the technology and design developed for dry lithography can carry over directly to immersion lithography.
However, because the substrate moves rapidly in a typical lithography system, the immersion fluid in the immersion area including the space between the projection system and the substrate tends to be carried away from the immersion area. If the immersion fluid escapes from the immersion area, that fluid can interfere with operation of other components of the lithography system. One way to recover the immersion fluid and prevent the immersion fluid from contaminating the immersion lithography system is described in US2006/0152697 A1, the disclosure of which is incorporated herein by reference in its entirety.
It also is known to maintain the immersion fluid in the gap between the last optical element and the imaging surface of the substrate by submerging both in the immersion fluid. For an example of such a system, see, for example, U.S. Pat. No. 4,509,852, the disclosure of which is incorporated herein by reference in its entirety.
According to some aspects of the invention, an immersion liquid confinement apparatus confines an immersion liquid in an immersion area that includes a gap between a projection system and an object of exposure in an immersion lithography system. The confinement apparatus also recovers the immersion liquid from the immersion area. The confinement member includes a first outlet and a second outlet. The second outlet is disposed radially farther away from the gap than is the first outlet. A porous member is disposed to cover the second outlet, but the first outlet is not covered by any porous member. A pressure control system controls a first low pressure that is provided to the first outlet so that more than 50% of recovered immersion liquid is recovered through the first outlet. The pressure control system also controls a second low pressure provided to the second outlet. The second low pressure maintains a pressure at a surface of the porous member below a bubble point of the porous member.
According to some embodiments, the first and second outlets each include a groove. In particular, the first and second outlets can include a plurality of openings that open into their corresponding groove. This structure evenly distributes the recovery forces around the gap so as to provide a more uniform flow.
According to some embodiments, the grooves and the porous member encircle the gap.
The porous member can be a mesh, a porous material or a member having etched holes therein. A pore size of the pores in the porous member can be between about 5 μm and 125 μm. By recovering most of the immersion liquid through the first (inner) outlet, less immersion liquid is recovered through the porous member, which enables the pore size of the porous member to be reduced. This enables the bubble point of the porous member to be increased, which reduces the possibility of gas being sucked through the porous member, which can lead to vibration of the confinement member, immersion liquid and projection system.
According to some embodiments, the liquid confinement member also includes one or more immersion liquid supply openings that supply the immersion liquid to the immersion area. The supply openings are disposed closer to the gap than are the first and second outlets.
According to other embodiments of the invention, a porous member can be disposed on the substrate-holding table directly adjacent to the area where the substrate is held. Any immersion liquid that overflows from the substrate is absorbed by the porous member. The porous member can be connected to a receptacle for receiving the immersion liquid, and that receptacle can be communicated with a vacuum source, for example. According to some embodiments, the porous member is disposed on a fine-movement stage, and any immersion liquid collected by the porous member passes through the fine-movement stage and is collected by a second porous member disposed on a coarse-movement stage that is disposed below the fine-movement stage. The immersion liquid collected by the porous member on the fine-movement stage can flow, for example, by gravity to the porous member on the coarse-movement stage which, in turn, is coupled to the receptacle and vacuum source.
The invention will be described in conjunction with the following drawings of exemplary embodiments in which like reference numerals designate like elements, and in which:
The illumination source of the lithography system can be a light source such as, for example, a mercury g-line source (436 nm) or i-line source (365 nm), a KrF excimer laser (248 nm), an ArF excimer laser (193 nm) or a F2 laser (157 nm). The projection system 14 projects and/or focuses the light passing through the reticle onto the substrate 26. Depending upon the design of the exposure apparatus, the projection system 14 can magnify or reduce the image illuminated on the reticle. It also could be a 1× magnification system.
When far ultraviolet radiation such as from the excimer laser is used, glass materials such as silica glass and calcium fluorite that transmit far ultraviolet rays can be used in the projection system 14. The projection system 14 can be a catadioptric, completely refractive or completely reflective.
With an exposure device, use of the catadioptric type optical system can be considered. Examples of the catadioptric type of optical system are shown in U.S. Pat. No. 5,668,672 and U.S. Pat. No. 5,835,275. In these cases, the reflecting optical device can be a catadioptric optical system incorporating a beam splitter and concave mirror. U.S. Pat. No. 5,689,377 also uses a reflective-refracting type of optical system incorporating a concave mirror, etc., but without a beam splitter, and also can be employed with this invention. The disclosures of the above-mentioned U.S. patents are incorporated herein by reference in their entireties.
The apparatus 18 includes at least one (and preferably more than one) liquid supply inlets 30 through which immersion liquid 80 is supplied to the immersion area. The liquid reaches the substrate 26 after passing through aperture 35. As shown in
In the
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The pore size of the pores in the porous member preferably is about 5 μm to 125 μm. Smaller pore sizes are preferred because a smaller pore size increases the bubble point of the porous member, which, in turn, reduces the chances of gas being sucked through the porous member 50. Sucking gas through the porous member 50 (or through any of the first or second outlets) is not desirable because such gas can cause vibrations and temperature fluctuations, which adversely affects the image forming performance of the lithography apparatus 10.
A control system 100 controls the supply and temperature of immersion liquid into the immersion area through inlets 30 and controls the recovery of immersion liquid from the immersion area through outlets 40 and 65.
In particular, the control system 100 applies a first low pressure to the first outlets 40 and applies a second low pressure to the second outlets 65. The low pressure applied to the first outlets 40 is such that more than 50% of the total liquid recovered is recovered through the set of first outlets 40. The first low pressure can be controlled to be a fixed suction rate, for example, by a vacuum source having a needle valve. Any immersion liquid that has not been recovered by the first set of outlets 40 and flows past the set of first outlets 40 is recovered through the porous member 50 and the set of second outlets 65. As noted above, the porous member 50 could be made out of porous ceramic, sintered glass, chemically etched metal sheets, etc., and would provide a suction area having a high critical bubble point, for example, greater than 2 kPa. The second low pressure supplied to the second outlets 65 can be controlled to be maintained below the bubble point so that no air or other gases is mixed into the recovery system through the porous member 50. Structures for controlling the low pressure supplied to the second outlets can be those systems described, for example, in US2006/0152697A1, the disclosure of which is incorporated herein by reference in its entirety. Control system 100 controls the flow of liquid supplied through the inlet 30 to maintain a desired fluid level in the immersion area by any of numerous known techniques.
Recovering more than 50% of the immersion liquid through outlets having no porous member and recovering the remainder through liquid outlets having a porous member is advantageous compared to systems in which all outlets are covered with a porous member or no outlets are covered by a porous member. By removing more than 50% of the immersion liquid through outlets having no porous member, the rate of liquid outflow can be increased. This is beneficial because contaminants from the resist and other sources can be flushed away from under the projection system. The temperature of the immersion liquid also can be better controlled because liquid heated by the exposure energy is quickly removed. Use of a porous member to recover at least some of the immersion liquid also is advantageous because by controlling the removal force so as to be below the bubble point of the porous member, gas is not sucked through the outlets. However, if all liquid is removed through the porous member, then the pore size of the porous member must be increased in order to achieve the needed recovery rate so as to avoid an overflow condition. However, increasing the pore size reduces the bubble point, thereby increasing the chances that gases will be recovered through the porous member, which leads to vibration. Furthermore, removing all liquid through the porous member makes it more difficult to control the immersion liquid temperature and purity.
According to these aspects of the invention, because more than half of the immersion liquid is recovered through the first outlets having no porous member, the flow rate through the second outlets having the porous member can be greatly reduced. Accordingly, the porous member can have a smaller pore size and thus a higher bubble point. The control of vacuum pressure through a porous member with a higher bubble point is easier than control through a porous member having a lower bubble point. In addition, pressure fluctuation caused by change of flow rate through the porous member is reduced because of the slower rate and higher bubble point. A porous member having a higher bubble point also prevents the liquid from flowing back down onto the substrate even if the vacuum pressure is lost above the porous member.
The porous member 90 is a liquid-absorbing member that is disposed directly adjacent to the substrate 26, which is held on a holder 27 (sometimes called a “chuck”). The porous member 90 is annular and is arranged in a groove (shown in
In one embodiment, the porous member 90 has a thickness such that its upper surface is substantially in the same plane as the upper surface of the substrate 26 when held on the holding member 27. In other embodiments, the porous member 90 may be thicker or thinner so that its upper surface is either above or below the substrate upper surface. As seen in
Providing the porous member 90 so that it is directly adjacent to the outer edge of the substrate 26 greatly reduces the possibility of immersion liquid reaching the lower surface of the substrate 26. Thus, even if the substrate stage 22 is moved to a location where part of the immersion area extends beyond the edge of the substrate 26 (which occurs, for example, when imaging portions of the substrate near the outer circumference of the substrate as shown in FIG. 6), porous member 90 is able to collect immersion liquid beyond the outer circumference of the substrate 26. This is advantageous because if a thin film is left on the surface of the wafer stage, it could leave contaminants after the liquid is evaporated. In addition, evaporation results in vapor that could contaminate other systems and can affect the readings taken by the interferometers. Furthermore, evaporation can result in cooling of the wafer stage, causing undesirable deformation. Thus providing the porous member 90 adjacent to the substrate 26 minimizes these effects by promptly removing any immersion liquid that extends beyond the outer circumference of the substrate 26. Moreover, as discussed above, disposing the porous member 90 directly adjacent to the substrate 26 minimizes seepage of immersion liquid below the substrate, and thus minimizes contamination of the substrate holder. Another way to hold the substrate 26 is described in US2006/0139614A1, the disclosure of which is incorporated herein by reference in its entirety.
As shown in
The “bath-type” arrangement of
The embodiment of
In certain embodiments, the immersion fluid is a liquid having a high index of refraction. In different embodiments, the liquid may be pure water, or a liquid including, but not limited to, cedar oil, fluorin-based oils, “Decalin” or “Perhydropyrene.”
The porous members 90 and 190 may be a mesh or may be formed of a porous material having holes typically with a size smaller than 150 μm. For example, the porous member may be a wire mesh including woven pieces or layers of material made of metal, plastic or the like, a porous metal, a porous glass, a porous plastic, a porous ceramic, or a sheet of material having chemically etched holes (for example, by photo-etching).
The use of the exposure apparatus described herein is not limited to a photolithography system for semiconductor manufacturing. The exposure apparatus, for example, can be used as an LCD photolithography system that exposes a liquid crystal display device pattern onto a rectangular glass plate, or a photolithography system for manufacturing a thin film magnetic head.
Semiconductor devices can be fabricated using the above described systems, by the process shown generally in
At each stage of wafer processing, when the above-mentioned preprocessing steps have been completed, the following post-processing steps are implemented. During post-processing, first, in step 815 (photoresist formation step), photoresist is applied to a wafer. Next, in step 816 (exposure step), the above-mentioned exposure device is used to transfer the circuit pattern of a mask (reticle) to a wafer. Then in step 817 (developing step), the exposed wafer is developed, and in step 818 (etching step), parts other than residual photoresist (exposed material surface) are removed by etching. In step 819 (photoresist removal step), unnecessary photoresist remaining after etching is removed. Multiple circuit patterns are formed by repetition of these preprocessing and post-processing steps.
A photolithography system (an exposure apparatus) according to the embodiments described herein can be built by assembling various subsystems in such a manner that prescribed mechanical accuracy, electrical accuracy, and optical accuracy are maintained. In order to maintain the various accuracies, prior to and following assembly, every optical system is adjusted to achieve its optical accuracy. Similarly, every mechanical system and every electrical system are adjusted to achieve their respective mechanical and electrical accuracies. The process of assembling each subsystem into a photolithography system includes providing mechanical interfaces, electrical circuit wiring connections and air pressure plumbing connections between each subsystem. Each subsystem also is assembled prior to assembling a photolithography system from the various subsystems. Once a photolithography system is assembled using the various subsystems, a total adjustment is performed to make sure that accuracy is maintained in the complete photolithography system. Additionally, it is desirable to manufacture an exposure system in a clean room where the temperature and cleanliness are controlled.
While the invention has been described with reference to preferred embodiments thereof, it is to be understood that the invention is not limited to the preferred embodiments or constructions. The invention is intended to cover various modifications and equivalent arrangements. In addition, while the various elements of the preferred embodiments are shown in various combinations and configurations, that are exemplary, other combinations and configurations, including more, less or only a single element, are also within the spirit and scope of the invention.
This application claims the benefit of U.S. Provisional Patent Application No. 60/838,897 filed Aug. 21, 2006, U.S. Provisional Patent Application No. 60/854,442 filed Oct. 26, 2006 and U.S. Provisional Patent Application No. 60/854,728 filed Oct. 27, 2006. The disclosure of each of these applications is incorporated herein by reference in its entirety.
Number | Date | Country | |
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60838897 | Aug 2006 | US | |
60854442 | Oct 2006 | US | |
60854728 | Oct 2006 | US |