Claims
- I/we claim:
- 1. An apparatus for processing a microelectronic workpiece, comprising:
a vessel configured to receive a processing fluid; a support member having a contacting portion configured to carry the microelectronic workpiece at least proximate to the vessel; and a heater positioned at least proximate to at least one of the vessel and the support member to heat at least a portion of (a) the support member, or (b) the microelectronic workpiece when the contacting portion carries the microelectronic workpiece, or (c) the support member and at least a portion of the microelectronic workpiece.
- 2. The apparatus of claim 1 wherein the heater includes a substrate having at least one electrically conductive trace coupleable to a source of electrical current, and wherein the apparatus further comprises a shield member having an opening in which the heater is disposed, the shield member being sealably disposed around the heater to at least restrict contact between the heater and the processing fluid, and wherein the shield member includes the contacting portion.
- 3. The apparatus of claim 1 wherein the support member includes at least one of a rotor configured to rotate the microelectronic workpiece, a backing plate configured to contact the microelectronic workpiece, and a seal configured to seal an interface between the support member and the vessel, and wherein at least one of the rotor, the backing plate and the seal has a fluid passage positioned to receive heated fluid to heat the at least one of the rotor, the backing plate and the seal.
- 4. The apparatus of claim 1 wherein the support member is moveable relative to the vessel to move the microelectronic workpiece relative to the vessel.
- 5. The apparatus of claim 1 wherein the heater is carried by the support member.
- 6. The apparatus of claim 1 wherein the heater includes a substrate having at least one electrically conductive trace coupleable to a source of electrical current, and wherein the contacting portion includes a shield member having an opening in which the heater is disposed, the shield member being sealably disposed around the heater to at least restrict contact between the heater and the processing fluid, the shield member having a contacting surface facing toward the microelectronic substrate, the contacting surface having a plurality of vacuum apertures coupleable to a vacuum source to draw the microelectronic substrate toward the contacting surface.
- 7. The apparatus of claim 1 wherein the vessel is configured to receive an electrolytic processing fluid, and wherein the support member includes an electrical contact element positioned to removably contact the microelectronic workpiece when the support member carries the microelectronic workpiece, further wherein the heater is positioned at least proximate to the electrical contact element to transfer heat to the electrical contact element.
- 8. The apparatus of claim 1 wherein the vessel includes an inner chamber having a weir over which the processing fluid can flow, the weir defining a level of the processing fluid, the vessel further including an outer chamber disposed outwardly from the inner chamber and positioned to receive processing fluid flowing over the weir.
- 9. The apparatus of claim 1 wherein the vessel is configured to receive an electroless processing fluid, and wherein the heater is positioned to transfer heat to the microelectronic workpiece when the support member carries the microelectronic workpiece.
- 10. The apparatus of claim 1 wherein the heater includes an electrical resistance heater.
- 11. The apparatus of claim 1 wherein the contacting portion includes a moveable mechanical device configured to releasably clamp the microelectronic workpiece to the support member.
- 12. The apparatus of claim 1 wherein the contacting portion includes a contacting surface having plurality of vacuum apertures, the vacuum apertures being coupleable to a vacuum source to draw the microelectronic workpiece toward the contacting surface.
- 13. The apparatus of claim 1, further comprising a temperature sensor operatively coupled to the heater to control activation of the heater.
- 14. The apparatus of claim 1 wherein the vessel includes an infrared-transmissive window and wherein the apparatus further comprises an infrared temperature sensor positioned to detect a temperature through the window, the infrared temperature sensor being operatively coupled to the heater to control activation of the heater.
- 15. The apparatus of claim 1 wherein the heater has a first zone configured to transfer heat at a first rate, the heater further having a second zone configured to transfer heat at a second rate different than the first rate.
- 16. The apparatus of claim 1 wherein the vessel includes a portion that is at least partially transmissive to infrared radiation, and wherein the heater includes an infrared heater positioned at least proximate to the vessel to direct infrared radiation through the at least partially transmissive portion.
- 17. The apparatus of claim 1 wherein the heater includes a fluid conduit coupleable to a source of heated fluid, the fluid conduit being positioned to provide thermal contact between the fluid and at least a portion of the support member.
- 18. The apparatus of claim 1 wherein the support member includes at least one of a rotor configured to rotate the microelectronic workpiece, a backing plate configured to contact the microelectronic workpiece, and a seal configured to seal an interface between the support member and the vessel, and wherein at least one of the rotor, the backing plate and the seal has an electrically conductive layer coupleable to a source of electrical current to heat the at least one of the rotor, the backing plate and the seal.
- 19. The apparatus of claim 1 wherein the support member is configured to contact an edge of the microelectronic workpiece.
- 20. An apparatus for electrolessly processing a microelectronic workpiece, comprising:
a vessel configured to contain an electroless processing fluid; a support member having a contacting portion configured to carry the microelectronic workpiece at least proximate to the vessel; and a heater positioned at least proximate to a surface of the microelectronic workpiece when the contacting portion carries the microelectronic workpiece to transfer heat to the microelectronic workpiece.
- 21. The apparatus of claim 20 wherein the vessel includes a portion that is at least partially transmissive to infrared radiation, and wherein the heater includes an infrared heater positioned at least proximate to the vessel to direct infrared radiation through the at least partially transmissive portion to the microelectronic workpiece.
- 22. The apparatus of claim 20 wherein the heater is carried by the support member.
- 23. The apparatus of claim 20 wherein the support member is moveable relative to the vessel to bring the microelectronic workpiece into contact with the electroless processing fluid when the vessel contains the electroless processing fluid.
- 24. The apparatus of claim 20, further comprising the electroless processing fluid.
- 25. The apparatus of claim 20 wherein the heater includes an electrical heater.
- 26. The apparatus of claim 20 wherein the heater includes a substrate having a first surface facing toward the microelectronic workpiece when the support member carries the microelectronic workpiece, the substrate further having a second surface facing opposite the first surface, and wherein the heater further includes electrically conductive traces positioned at least proximate to the second surface of the substrate.
- 27. The apparatus of claim 20 wherein the heater includes a substrate having a first surface facing toward the microelectronic workpiece when the support member supports the microelectronic workpiece, the substrate further having a second surface facing opposite from the first surface, and wherein the heater further includes electrically conductive traces positioned at least proximate to the first surface of the substrate.
- 28. The apparatus of claim 20 wherein the heater is a first heater and wherein the apparatus further comprises a second heater spaced apart from the support member and positioned to heat the electroless processing fluid.
- 29. The apparatus of claim 20 wherein the heater includes an electrical heater coupleable to a source of electrical current, and wherein the contacting portion includes a shield member having an opening in which the heater is disposed, the shield member being sealably disposed around the heater to at least restrict contact between the heater and the processing fluid.
- 30. The apparatus of claim 20 wherein the heater includes an electrical heater having electrical leads coupleable to a source of electrical current, and wherein the contacting portion includes a shield member sealably disposed around at least a portion of the leads to at least restrict contact between the leads and the processing fluid.
- 31. The apparatus of claim 20 wherein the heater includes a substrate having at least one conductive electrical trace coupleable to a source of electrical current.
- 32. The apparatus of claim 20 wherein the microelectronic workpiece has a first surface facing toward the processing fluid and a second surface facing opposite the first surface, and wherein the heater is positioned to transfer heat to the second surface.
- 33. An apparatus for electrolessly processing a microelectronic workpiece, comprising:
a vessel configured to contain an electroless processing fluid; a support member configured to carry the microelectronic workpiece, the support member being moveable relative to the vessel to bring the microelectronic workpiece into contact with the electroless processing fluid when the vessel contains the electroless processing fluid; an electrical heater carried by the support member, the heater being positioned to contact a surface of the microelectronic workpiece when the support member carries the microelectronic workpiece to transfer heat to the microelectronic workpiece by conduction, wherein the heater includes a substrate having a first surface and a second surface facing opposite the first surface, the first surface being positioned to face toward the microelectronic workpiece when the support member supports the microelectronic workpiece, the heater further including at least one electrical trace proximate to the second surface of the substrate and coupleable to a source of electrical current; and a shield member sealably disposed around at least a portion of the heater to at least restrict contact between the electroless processing fluid and the heater, the shield member having a contacting surface positioned to contact the microelectronic workpiece.
- 34. The apparatus of claim 33 wherein the shield member has an annular opening in which the heater is disposed, the shield member being sealably disposed around the heater to at least restrict contact between the heater and the processing fluid.
- 35. The apparatus of claim 33 wherein the heater has electrical leads coupleable to a source of electrical current, and wherein the shield member is sealably disposed around at least a portion of the leads to at least restrict contact between the leads and the processing fluid.
- 36. The apparatus of claim 33 wherein the shield member has a first surface facing toward the support member and a second surface facing away from the first surface, and wherein the second surface includes at least one vacuum aperture coupleable to a vacuum source to draw the microelectronic workpiece toward the support member.
- 37. The apparatus of claim 33 wherein the shield member has an annular opening in which the heater is disposed, the shield member having a first surface sealably engaged with the support member to at least restrict contact between the heater and the processing fluid, the shield member further having a second surface facing opposite the first surface and facing toward the microelectronic workpiece, the second surface having at least one vacuum aperture coupleable to a vacuum source to draw the microelectronic workpiece toward the support member.
- 38. An apparatus for processing a microelectronic workpiece, comprising:
a vessel configured to receive an electrolytic processing fluid; a support member having a contacting portion configured to carry the microelectronic workpiece at least proximate to the vessel, the support member being moveable relative to the vessel to move the microelectronic workpiece relative to the vessel; a contact element carried by the support member and positioned to be in electrical communication with the microelectronic workpiece when the support member carries the microelectronic workpiece; and a heater carried by the support member to heat at least a portion of the support member.
- 39. The apparatus of claim 38 wherein the support member includes at least one of a rotor configured to rotate the microelectronic workpiece, a backing plate configured to contact the microelectronic workpiece with the microelectronic workpiece positioned between the backing plate and the contact element, and a seal configured to seal an interface between the support member and the vessel, and wherein at least one of the rotor, the backing plate and the seal has a fluid passage positioned to receive a heated fluid to heat the at least one of the rotor, the backing plate and the seal.
- 40. The apparatus of claim 38 wherein the heater includes a fluid conduit coupleable to a source of heated fluid, the fluid conduit being positioned to provide thermal contact between fluid in the conduit and at least a portion of the support member.
- 41. The apparatus of claim 38 wherein the support member includes at least one of a rotor configured to rotate the microelectronic workpiece, a backing plate configured to contact the microelectronic workpiece with the microelectronic workpiece positioned between the backing plate and the contact element, and a seal configured to seal an interface between the support member and the vessel, and wherein at least one of the rotor, the backing plate and the seal has an electrically conductive layer coupleable to a source of electrical current to heat the at least one of the rotor, the backing plate and the seal.
- 42. A method for processing a microelectronic workpiece, comprising:
carrying the microelectronic workpiece with a support member, the microelectronic workpiece having a first surface and a second surface facing opposite from the first surface; while the support member carries the microelectronic workpiece, contacting the first surface of the microelectronic workpiece with a processing fluid; and while the first surface of the microelectronic workpiece contacts the processing fluid, transferring heat from a heater positioned at least proximate to at least one of the microelectronic workpiece and the support member to the second surface of the microelectronic workpiece, or to the support member, or to both the second surface and the support member.
- 43. The method of claim 42, further comprising carrying the heater with the support member.
- 44. The method of claim 42, further comprising at least restricting a formation of condensation on the support member by transferring heat to the support member.
- 45. The method of claim 42 wherein the support member includes at least one electrical contact element positioned to removably contact the microelectronic workpiece when the support member carries the microelectronic workpiece, the support member including a backing plate positioned against the microelectronic workpiece with the microelectronic workpiece positioned between the backing plate and the at least one electrical contact element, and wherein the method further comprises at least restricting a formation of condensation on at least one of the electrical contact element and the backing plate.
- 46. The method of claim 42 wherein the heater includes a substrate having at least one electrically conductive trace, and wherein the method further comprises:
coupling the at least one conductive trace to a source of electrical current; and at least restricting contact between the heater and the processing fluid with a shield positioned at least proximate to at least a portion of the heater.
- 47. The method of claim 42 wherein the heater includes a substrate having at least one electrically conductive trace, and wherein the method further comprises:
coupling the at least one conductive trace to a source of electrical current; at least restricting contact between the heater and the processing fluid with a shield positioned annularly around the heater; and drawing a vacuum on at least one vacuum aperture in the shield to apply a force on the microelectronic workpiece directed toward the support member.
- 48. The method of claim 42 wherein the processing fluid includes an electrolytic processing fluid carried in a vessel having an inner chamber with a weir over which the processing fluid can flow, the weir defining a level of the processing fluid, the vessel further including an outer chamber disposed outwardly from the inner chamber and positioned to receive processing fluid flowing over the weir.
- 49. The method of claim 42 wherein the support member includes an electrical contact element positioned to removably contact the microelectronic workpiece when the support member supports the microelectronic workpiece, still further wherein the method further comprises transferring heat from the heater to the electrical contact element.
- 50. The method of claim 42 wherein transferring heat to the second surface of the microelectronic workpiece includes transferring the heat to the second surface before the heat is transferred to the first surface.
- 51. The method of claim 42 wherein the heater includes an electrical resistance heater and wherein the method further comprises heating the heater by passing an electrical current through the heater.
- 52. The method of claim 42, further comprising immersing the microelectronic workpiece in the processing fluid while transferring heat from the heater to the microelectronic workpiece.
- 53. The method of claim 42, further comprising mechanically clamping the microelectronic workpiece to the support member.
- 54. The method of claim 42, further comprising:
sensing a temperature of a region at least proximate to the microelectronic workpiece; and controlling activation of the heater based on the temperature sensed in the region at least proximate to the microelectronic workpiece.
- 55. The method of claim 42, further comprising:
sensing infrared emissions from the microelectronic workpiece to detect a temperature of a region at least proximate to the microelectronic workpiece; and controlling activation of the heater based on the temperature.
- 56. The method of claim 42, further comprising:
transferring heat from a first portion of the heater to a first portion of the microelectronic workpiece at a first rate; and transferring heat from a second portion of the heater to a second portion of the microelectronic workpiece at a second rate.
- 57. The method of claim 42, further comprising conveying a conductive material from the processing liquid to the microelectronic workpiece in an electrolytic process.
- 58. The method of claim 42, further comprising:
transferring heat from a first portion of the heater to a first portion of the microelectronic workpiece at a first rate; transferring heat from a second portion of the heater to a second portion of the microelectronic workpiece at a second rate; and controlling a first temperature of the first portion of the microelectronic workpiece to be approximately the same as a second temperature of the second portion of the microelectronic workpiece.
- 59. The method of claim 42, further comprising:
transferring heat from a first portion of the heater to a first portion of the microelectronic workpiece at a first rate; transferring heat from a second portion of the heater to a second portion of the microelectronic workpiece at a second rate; and controlling a first temperature of the first portion of the microelectronic workpiece to be different than a second temperature of the second portion of the microelectronic workpiece.
- 60. The method of claim 42, further comprising conveying a conductive material from the processing liquid to the microelectronic workpiece in an electroless process.
- 61. The method of claim 42, further comprising:
applying an electrical potential to the microelectronic workpiece; and conveying a conductive material from a consumable anode to the processing fluid and from the processing fluid to the microelectronic workpiece in an electrolytic process.
- 62. The method of claim 42 wherein transferring heat includes directing infrared radiation through an at least partially infrared-transmissive portion of the support member.
- 63. The method of claim 42 wherein the support member includes at least one of a rotor configured to rotate the microelectronic workpiece, a backing plate configured to contact the microelectronic workpiece and a seal configured to seal an interface between the support member and the vessel, and wherein transferring heat includes passing a heated fluid through at least one fluid passage positioned in at least one of the rotor, the backing plate and the seal.
- 64. The method of claim 42 wherein transferring heat includes transferring a heated fluid through a conduit and to the support member.
- 65. The method of claim 42 wherein the support member includes at least one of a rotor configured to rotate the microelectronic workpiece, a backing plate configured to contact the microelectronic workpiece and a seal configured to seal an interface between the support member and the vessel, and wherein at least one of the rotor, the backing plate and the seal has an electrically conductive layer coupleable to a source of electrical current to heat the at least one of the rotor, the backing plate and the seal.
- 66. A method for electrolessly processing a microelectronic workpiece, comprising:
carrying the microelectronic workpiece with a support member, the microelectronic workpiece having a first surface and a second surface facing opposite from the first surface; while the support member carries the microelectronic workpiece, contacting the first surface of the microelectronic workpiece with an electroless processing fluid; and while the first surface contacts the electroless processing fluid, transferring heat from a heater carried by the support member to the second surface of the microelectronic workpiece.
- 67. The method of claim 66 wherein transferring heat to the second surface of the microelectronic workpiece includes contacting an electrical heat source with the microelectronic workpiece.
- 68. The method of claim 66 wherein transferring heat to the second surface of the microelectronic workpiece includes contacting a thick-film electrical resistance heat source with the microelectronic workpiece.
- 69. The method of claim 66, further comprising heating the first surface of the microelectronic workpiece by heating the electroless processing fluid before contacting the microelectronic workpiece with the electroless processing fluid.
- 70. A method for processing a microelectronic workpiece, comprising:
carrying the microelectronic workpiece with a support member, the microelectronic workpiece having a first surface and a second surface facing opposite from the first surface; while the support member carries the microelectronic workpiece, contacting the first surface of the microelectronic workpiece with a processing fluid; and while the first surface contacts the processing fluid, transferring heat to the microelectronic workpiece by directing infrared radiation through the processing fluid toward the microelectronic workpiece.
- 71. The method of claim 70, further comprising mechanically clamping the microelectronic workpiece to the support member.
- 72. The method of claim 70, further comprising drawing the microelectronic workpiece to the support member by applying a vacuum to the microelectronic workpiece.
- 73. The method of claim 70 wherein directing infrared radiation includes directing infrared radiation through an at least partially transmissive portion of a vessel containing the processing fluid.
- 74. A method for electrolessly processing a microelectronic workpiece, comprising:
directing a quantity of electroless processing fluid into a vessel at a temperature at least approximately equal to an ambient temperature of a region adjacent to the vessel; carrying the microelectronic workpiece with a support member, the microelectronic workpiece having a first surface and a second surface facing opposite from the first surface; contacting the first surface of the microelectronic workpiece with the electroless processing fluid; and while the first surface contacts the electroless processing fluid, transferring heat to the microelectronic workpiece.
- 75. The method of claim 74, further comprising transferring heat to the second surface from a heater carried by the support member.
- 76. The method of claim 74 wherein transferring heat to the microelectronic workpiece includes contacting an electrical heat source with the second surface of the microelectronic workpiece.
- 76. The method of claim 74 wherein transferring heat to the microelectronic workpiece includes contacting a thick-film electrical resistance heat source with the second surface of the microelectronic workpiece.
- 78. The method of claim 74 wherein transferring heat to the microelectronic workpiece includes directing infrared radiation through the electroless processing fluid to the microelectronic workpiece.
- 79. A method for electrolessly processing a microelectronic workpiece, comprising:
directing a quantity of electroless processing fluid into a vessel; carrying the microelectronic workpiece with a support member, the microelectronic workpiece having a first surface and a second surface facing opposite from the first surface; contacting the first surface of the microelectronic workpiece with the electroless processing fluid; while the first surface of the microelectronic workpiece contacts the electroless processing fluid, transferring heat to the second surface of the microelectronic workpiece by applying an electrical current to a resistance heater carried by the support member; and at least restricting contact between the resistance heater and the electroless processing fluid with a seal positioned adjacent to at least a portion of the heater.
- 80. The method of claim 79, further comprising disposing a conductive material on the first surface of the microelectronic workpiece while the first surface contacts the electroless processing fluid.
- 81. The method of claim 79 wherein resisting contact between the resistance heater and the electroless processing fluid includes positioning the heater in an annular opening of a generally cylindrical seal member and sealably engaging the seal member with the support member.
- 82. A method for processing a microelectronic workpiece, comprising:
carrying the microelectronic workpiece with a support member, the microelectronic workpiece having a first surface and a second surface facing opposite from the first surface; applying an electrical potential to the first surface of the microelectronic workpiece; while the microelectronic workpiece is carried by the support member, contacting the first surface of the microelectronic workpiece with an electrolytic processing fluid; conveying conductive material from the electrolytic processing fluid to the microelectronic workpiece; and while the first surface contacts the electrolytic processing fluid, at least restricting an amount of condensation formed on at least a portion of the support member by transferring heat to the portion of the support member.
- 83. The method of claim 82 wherein transferring heat includes transferring heat from a heater carried by the support member.
- 84. The method of claim 82 wherein the support member includes at least one of a rotor configured to rotate the microelectronic workpiece, a backing plate configured to contact the second surface of the microelectronic workpiece and a seal configured to seal an interface between the support member and the vessel, and wherein the method further comprises passing heated fluid through a fluid passage in at least one of the rotor, the backing plate and the seal.
- 85. The method of claim 82 wherein the heat transfer unit includes a fluid conduit coupleable to a source of heated fluid, and wherein the method further comprises carrying the fluid conduit with the support member to provide thermal contact between the fluid and at least a portion of the support member.
- 86. The method of claim 82 wherein the support member includes at least one of a rotor configured to rotate the microelectronic workpiece, a backing plate configured to contact the second surface of the microelectronic workpiece and a seal configured to seal an interface between the support member and the vessel, and wherein the method further comprises passing an electrical current through an electrically conductive layer of at least one of the rotor, the backing plate and the seal to heat the at least one of the rotor, the backing plate and the seal.
- 87. A method for processing a microelectronic workpiece, comprising:
carrying the microelectronic workpiece with a support member, the microelectronic workpiece having a first surface and a second surface facing opposite from the first surface; moving the support member proximate to a vessel containing an electrolytic processing liquid; applying an electrical potential to the first surface of the microelectronic workpiece; while the microelectronic workpiece is carried by the support member, contacting the first surface of the microelectronic workpiece with the electrolytic processing liquid; conveying conductive material from the electrolytic processing liquid to the microelectronic workpiece; and while the first surface contacts the electrolytic processing fluid, at least restricting an amount of condensation formed on at least a portion of the support member by transferring heat to the portion of the support member from a heat transfer unit carried at least in part by the support member.
- 88. The method of claim 87 wherein the support member includes at least one of a rotor configured to rotate the microelectronic workpiece, a backing plate configured to contact the second surface of the microelectronic workpiece and a seal configured to seal an interface between the support member and the vessel, and wherein the method further comprises passing heated fluid through a fluid passage in at least one of the rotor, the backing plate and the seal.
- 89. The method of claim 87 wherein the heat transfer unit includes a fluid conduit coupleable to a source of heated fluid, and wherein the method further comprises carrying the fluid conduit with the support member to provide thermal contact between the fluid and at least a portion of the support member.
- 90. The method of claim 87 wherein the support member includes at least one of a rotor configured to rotate the microelectronic workpiece, a backing plate configured to contact the second surface of the microelectronic workpiece and a seal configured to seal an interface between the support member and the vessel, and wherein the method further comprises passing an electrical current through an electrically conductive layer of at least one of the rotor, the backing plate and the seal to heat the at least one of the rotor, the backing plate and the seal.
CROSS-REFERENCE TO RELATED APPLICATIONS
[0001] This application is related to the following U.S. Patent Applications, all of which are incorporated herein in their entireties by reference:
[0002] (a) U.S. patent application Ser. No. 09/797,504, entitled “METHOD AND APPARATUS FOR PROVIDING ELECTRICAL AND FLUID COMMUNICATION TO A ROTATING MICROELECTRONIC WORKPIECE DURING ELECTROCHEMICAL PROCESSING,” filed Mar. 1, 2001, and identified by Perkins Coie LLP docket No. 291958102US;
[0003] (b) U.S. patent application Ser. No. 09/875,424 entitled “LIFT AND ROTATE ASSEMBLY FOR USE IN A WORKPIECE PROCESSING STATION AND A METHOD OF ATTACHING THE SAME,” filed Jun. 5, 2001, and identified by Perkins Coie LLP docket No. 291958154US;
[0004] (c) U.S. Pat. No. 6,168,695 entitled “LIFT AND ROTATE ASSEMBLY FOR USE IN A WORKPIECE PROCESSING STATION AND A METHOD OF ATTACHING THE SAME” and identified by Perkins Coie LLP docket No. 291958033US;
[0005] (d) U.S. patent application Ser. No. 60/316,597 entitled “APPARATUS AND METHODS FOR ELECTROCHEMICAL PROCESSING OF MICROELECTRONIC WORKPIECES,” filed Aug. 31, 2001, and identified by Perkins Coie LLP docket No. 291958167US; and
[0006] (e) U.S. patent application Ser. No. 09/733,608 entitled “METHOD AND APPARATUS FOR PROCESSING A MICROELECTRONIC WORKPIECE AT AN ELEVATED TEMPERATURE,” filed Dec. 8, 2000, and identified by Perkins Coie LLP docket No. 291958124US.