Claims
- 1. An apparatus for growing a single-crystalline semiconductor film based on vapor phase growth comprising a reaction chamber, a rotary drive unit for rotating a single-crystalline semiconductor substrate set in said reaction chamber, a gas feed section for feeding reaction gas to a major plane side of said substrate, a gas discharge section, a purge gas feed section for feeding a purge gas to a back space of said substrate in said reaction chamber and a purge gas discharge section; in which said purge gas feed section being directly connected to said back space of said substrate, said rotary drive section being designed to allow purge gas flow therethrough as well as being located at said purge gas discharge section, a purge gas discharge duct being connected to said purge gas discharge section, and to said purge gas discharge duct, a gas flow controller and an evacuation pump placed further in the downstream thereof are connected.
Parent Case Info
This application is a Divisional of U.S. P.T.D. Ser. No. 08/806,163 filed Feb. 25, 1997.
US Referenced Citations (7)
Foreign Referenced Citations (5)
Number |
Date |
Country |
2-30695 |
Feb 1990 |
JPX |
3-270126 |
Dec 1991 |
JPX |
04186825 |
Mar 1992 |
JPX |
06220642 |
Sep 1994 |
JPX |
61-91095 |
May 1996 |
JPX |
Divisions (1)
|
Number |
Date |
Country |
Parent |
806163 |
Feb 1997 |
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