The present application relates to apparatuses that comprise a coil and a capacitor, and to systems that use such an apparatus to couple circuit sections associated with different voltage domains.
Apparatuses that comprise a capacitor and a coil are used for various applications, for example for resonant circuits. A further application is the DC isolation of different voltage domains, i.e., different circuit sections operating at different supply voltages. Here, the capacitors can be used to decouple DC voltages, while AC signals, in particular radio-frequency (RF) signals, can be transmitted. In the case of a differential configuration, in which differential signals are transmitted, a filter containing coils and also capacitors can then be used to bring about common-mode rejection.
Such capacitors and coils can be provided as discrete devices, which can sometimes mean additional space requirement or can be more complex in terms of assembling systems.
According to one exemplary embodiment, an apparatus is provided, comprising: a substrate; a first electrically conductive pad, which is arranged in a second layer above the substrate and forms a first connection of the apparatus; a second electrically conductive pad, which is arranged in the second layer and forms a second connection of the apparatus; a first electrically conductive element arranged in a first layer, which is spaced apart from the second laver, wherein the first electrically conductive element forms a first capacitor with either the first pad or the second pad; and a first coil formed in the first layer and/or the second layer, a first end of the first coil being connected to the second pad.
According to a further exemplary embodiment, a system is provided, comprising: a first circuit section, which is associated with a first voltage domain; a second circuit section, which is associated with a second voltage domain, which is different than the first voltage domain; and the aforementioned apparatus to couple the first circuit section to the second circuit section.
The above summary serves merely as a brief overview of some embodiments and should not be interpreted as limiting.
Various exemplary embodiments are described below with reference to the drawings. These exemplary embodiments serve merely as an explanation and should not be interpreted as limiting. Features (e g elements, components, steps, processes, etc.) of different exemplary embodiments can be combined with one another unless indicated otherwise. Details or modifications described for one of the exemplary embodiments can also be applied to other exemplary embodiments and are therefore not explained repeatedly. Mutually corresponding features bear the same reference signs in different figures and are therefore likewise not explained in detail multiple times.
Couplings or connections described in regard to the exemplary embodiments relate to electrical couplings or connections unless Indicated otherwise.
The apparatus in
In some exemplary embodiments, the first and second layers are metal layers, and so the electrically conductive element 14 and also the pads 12 and 13 are made from metal. In other exemplary embodiments, other electrically conductive materials, for example highly doped polycrystalline silicon, can be used in the first layer and/or the second layer. The dielectric 11 may be silicon dioxide or silicon nitrite, for example.
The dielectric 11 and also the pads 12, 13 and the electrically conductive element 14 can be manufactured in a conventional back end of line (BEOL) semiconductor process. The production of integrated circuits or other semiconductor devices is often divided into at least two phases, comprising the front end of line (FEOL) and the BEOL phase. After the BEOL, there may be an additional backend process, also referred to as “post-fab”. FEOL denotes a first phase of production, in which a typical semiconductor process involves configuring individual devices, for example transistors (which includes gate formation, for example), resistors and/or mechanical structures for micro-electromechanical systems (MEAS) in a semiconductor wafer. However, the FEOL does not comprise applying metal connecting layers. The BEOL, as used here, is a second phase of production, which generally starts when the first metal layer is applied to the semiconductor wafer. In a conventional semiconductor process, the BEOL comprises the formation of contacts, insulating layers (for example of oxides or nitrites such as the dielectric 11), metal layers such as the first layer and the second layer and connecting points for connecting the chip and the package. For example, some processes involve adding up to ten metal layers in the BEOL, dielectric layers being situated between the metal layers in each case, although fewer metal layers can also be used, depending on the process. In exemplary embodiments of the present application that are described below, two metal layers with a dielectric between them and possibly plated through holes (VIAs, Vertical Interconnect Accesses) between the layers can be used.
As already mentioned above, the electrically conductive element 11 is thus formed in a first metal layer and the pads 12, 13 are formed in a second metal layer, the formation of the metal layers and the structuring thereof being able to take place as in conventional BEOL processes.
In the exemplary embodiment in
In addition, a coil 15 is formed around the pad 13 in the second metal layer, one end of the coil 15 being connected to the pad 13. As such, a BEOL process can be used with two metal layers to form a combination comprising two capacitors and one coil. For contact-connection purposes, the pads 12, 13 can be contact-connected to bonding wires 16, 17, as shown in
As a further illustration,
In the example in
The second ends of the coils 15A, 15B are both connected to a further pad 18, which is contact-connected by way of a bonding wire 19. As will be explained later with reference to
Before the application to the coupling of voltage domains is discussed, various modifications of the exemplary embodiment in
A further exemplary embodiment is shown in
The exemplary embodiment in
The coils in
For the purpose of illustration,
In
As already mentioned at the outset, the apparatuses explained with reference to
The apparatus in this case is used to couple the signaling of and to DC isolate a first circuit portion 65 from a second circuit portion 67. In
Dashed lines 68A, 68B represent the DC isolation.
An apparatus 66B having only one capacitor is used in
In some exemplary embodiments, the first circuit portion 65, the second circuit portion 61 and the apparatus 66A or 66B are implemented on different dies, and/or also arranged in separate packages. The apparatus 66A, 66B can therefore provide a separate coupling chip, so to speak. In other exemplary embodiments, the apparatus 66A, 66B may be implemented together with the first circuit portion 65 and/or the second circuit portion 67 on a common die. The coupling chip can also be referred to as a coupler chip.
In the example shown, the first circuit section 65 comprises a logic circuit: 60, a first radio-frequency driver 61A and a second radio-frequency driver 61B. The logic circuit 60 receives a signal Sin that ultimately needs to be transmitted to the second circuit section 67, and encodes said signal for the transmission. Such encoding can take place in any conventional manner and can also include techniques such as noise shaping, for example. The logic circuit 60 generates a difference signal containing two signal portions, which are output to the radio-frequency drivers 61A and 61B, which then output a differential radio-frequency signal on output pads 62A, 62B.
The pads 62A, 62B are connected to the apparatus 66A or 66B, specifically to the pads 12A, 12B in the figures described hereinabove, by way of the bonding wires 16A, 16B. The radio-frequency signals are then transmitted by way of the capacitors Cg1, Cg2, Cg1*, Cg2* in the case of
The apparatus 66A or 66B is connected to pads 63A, 63B, 63C of the second circuit section 67 by way of the bonding wires 17A, 19 and 17B as shown. With reference to
In the second circuit portion 67, the pad 63A is connected to the pad 63B by way of a capacitor C1, and the pad 63B is connected to the pad 63C by way of a capacitor C1*. In the exemplary embodiment shown, the capacitors C1, C1* together with the inductances L1, L1* and the resistors R1, R1* act as an RLC filter circuit, which can reject a common-mode component of the differential signal. Such common-mode components can occur during transmission and, if not filtered out, can cause high voltages in the circuit section 67, which can lead to damage. k1 denotes a coupling between the inductances L1 and L1*. This design of coils and capacitors can thus ensure common-mode rejection.
The transmitted signals are then supplied to connections S1, S2 of a receiving circuit 64, which uses them to generate—for example by way of demodulation and decoding—an output signal Sout that can correspond to the signal Sin in the event of error-flee transmission. The transmission. circuits shown in the first and second circuit sections should be understood only as an application example, however, and other circuits can also be used. Moreover, as already mentioned earlier on, instead of the bonding wires 16A, 16B, 17A, 17B, 19 it is also possible to use other electrical connections such as metal rails, circuit boards printed with metal tracks, connections in ball grid arrays and the like.
In some exemplary embodiments, the circuit section 65 may be associated with a first voltage domain, and the second circuit section 67 may be associated with a second voltage domain, i.e. the circuit sections 65 and 61 can have separate Power supplies. Voltages in the first and second voltage domains can differ significantly in some applications, for example by a factor of 10 or a factor of 100. By way of example, the first circuit section 65 may be associated with a high-voltage domain, while the second circuit section 67 is associated with a low-voltage domain. The apparatus 66A or 66B then ensures DC isolation of the voltage domains.
Some embodiments are defined by the examples that follow:
Example 1. Apparatus, comprising: a substrate, a first electrically conductive pad, which is arranged in a second layer above the substrate and forms a first connection of the apparatus, a second electrically conductive pad, which is arranged in the second layer and forms a second connection of the apparatus, a first electrically conductive element arranged in a first. layer, which is spaced apart from the second layer, wherein the first electrically conductive element forms a first capacitor with either the first pad or the second pad, and a first coil formed in the first layer and/or the second layer, a first end of the first coil being connected to the second pad.
Example 2. Apparatus according to example 1, wherein the first electrically conductive element forms a second capacitor with the other of the first pad and the second pad.
Example 3. Apparatus according to example 1, wherein the first electrically conductive element is connected to the other of the first pad and the second pad by a vertical electrically conductive connection.
Example 4. Apparatus according to one of examples 1 to 3, wherein the first coil is formed in the second layer and turns of the first coil are arranged circumferentially around the second pad.
Example 5 Apparatus according to one of examples 1 to 3, wherein turns of the first coil are formed by electrically conductive sections in the first layer, electrically conductive sections in the second layer and vertical electrically conductive connections between the first layer and the second layer.
Example 6. Apparatus according to one of examples 1 to 5, further comprising: a third electrically conductive pad, which is arranged in the second layer and forms a third connection of the apparatus, a fourth electrically conductive pad, which is arranged in the second layer and forms a fourth connection of the apparatus, a second electrically conductive element arranged in the first layer, wherein the second electrically conductive element forms a third capacitor with either the third pad or the fourth pad, and a second coil formed in the first layer and/or the second layer, a first end of the second coil being connected to the fourth pad.
Example 7. Apparatus according to example 6, wherein the third pad, the fourth pad, the second electrically conductive element and the second coil are configured and arranged in accordance with the first pad, the second pad, the first electrically conductive element and the first coil.
Example 8. Apparatus according to example 6 or 7, further comprising: a fifth electrically conductive pad, which is arranged in the second layer and forms a fifth connection of the apparatus, a second end of the first coil and a second end of the second coil being connected to the fifth pad.
Example 9. Apparatus according to one of examples 6 to 8, wherein turns of the first coil have the opposite winding direction to turns of the second coil.
Example 10. Apparatus according to one of examples 1 to 9, wherein the apparatus is configured as a coupler chip for coupling two circuit portions.
Example 11. Apparatus according to one of examples 1 to 10, wherein at least one layer from the first layer and the second layer is a metal layer.
Example 12. Apparatus according to one of examples 1 to 11, wherein a dielectric material is arranged between the first layer and the second layer.
Example 13. Apparatus according to one of examples 1 to 12, wherein a dielectric material is arranged between the substrate and the first layer.
Example 14. System, comprising: a first circuit section, which is associated with a first voltage domain, a second circuit section, which is associated with a second voltage domain, which is different than the first voltage domain, and the apparatus according to one of examples 1 to 13 to couple the first circuit section to the second circuit section.
Example 15. System according to example 14, wherein the first circuit section is formed on a first die, the second circuit section is formed on a second die and the apparatus is formed on a third die.
Example 16. System according to example 14 or 15, wherein the first circuit section is coupled to the first connection of the apparatus and the second circuit section is coupled to the second connection of the apparatus.
Example 17. System according to example 16, wherein the apparatus is configured according to one of examples 6 to 9, the first circuit section being coupled to the third connection of the apparatus and the second circuit section being coupled to the fourth connection of the apparatus.
Example 18. System according to example 17, wherein the apparatus is configured according to example 8, the second circuit section being coupled to the fifth connection of the apparatus.
Example 19. System according to one of examples 14 to 18, wherein the first and second circuit sections are coupled to the apparatus by way of respective bonding wires.
Although this description has illustrated and described specific exemplary embodiments, persons with standard knowledge in the art will recognize that: a large number of alternative and/or equivalent implementations can be chosen as a replacement for the specific exemplary embodiments shown and described in this description without departing from the scope of the invention shown. It is the intention for this application to cover ail adaptations or variations of the specific exemplary embodiments that are discussed here. Therefore, this invention is intended to be restricted only by the claims and the equivalents of the claims.
Number | Date | Country | Kind |
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102022119125.7 | Jul 2022 | DE | national |