This is a division, of application Ser. No. 317,992 filed Dec. 26, 1972, now U.S. Pat. No. 3,855,690.
Number | Name | Date | Kind |
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2802159 | Stump | Aug 1957 | |
3375417 | Hull et al. | Mar 1968 | |
3634150 | Horn | Jan 1972 | |
3678573 | Driver | Jul 1972 | |
3746908 | Engeler | Jul 1973 |
Entry |
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dumke et al., "GaAs Field-Effect . . . Self-Registered Gates," I.B.M. Tech. Discl. Bull., Vol. 14, No. 4, Sept. 1971, pp. 1248-1249. |
Napoli et al., "Switching Times of . . . GaAs Field-Effect Transistor," RCA Review, Vol. 32, Dec. 1971, pp. 645-649. |
Tausch et al., "Novel Crystal Growth . . . GaAs Overgrowth. . . ." J. Electrochem. Soc., Vol. 112, No. 7, July, 1965, pp. 706-709. |
Dumin, D. J., "Selective Epitaxy Using Silane and Germane," J. Crystal Growth 8(1), 1971, pp. 33-36. |
Number | Date | Country | |
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Parent | 317992 | Dec 1972 |