Claims
- 1. A process for fabricating an article, said process including an exposure with a dose of radiation of a radiation sensitive material in desired regions to form a latent pattern and development of said pattern through removal of said regions or of non-exposed regions by subjecting said region to a solvent for a development time and an overdevelopment time whereby a suitable dimension for critical features is obtained
- CHARACTERIZED in that said overdevelopment time is that established from data relating feature dimension to overdevelopment time wherein said data is obtained from a prototypical series of samples comprising exposure of said material with said dose for varying overdevelopment times to establish the overdevelopment time corresponding to a feature size and whereby said feature size is achievable without iterative development and without a strictly controlled environment.
- 2. The process of claim 1 wherein said radiation comprises electrons.
- 3. The process of claim 1 wherein said material comprises poly 1-butene sulfone.
- 4. The process of claim 1 wherein said article comprises a lithographic mask or an integrated circuit.
- 5. The process of claim 1 wherein said material is positive acting.
Parent Case Info
This application is a continuation of application Ser. No. 08/069665, filed on 6/1/93 now abandon, which is a continuation of Ser. No. 07/873532, filed on 4/21/92 (now abandoned), which is a continuation of Ser. No. 07/484707, filed on 2/26/90 (now abandoned).
US Referenced Citations (3)
Number |
Name |
Date |
Kind |
3708229 |
Pircher |
Jan 1973 |
|
4647172 |
Batchelder |
Mar 1987 |
|
4851311 |
Millis et al. |
Jul 1989 |
|
Non-Patent Literature Citations (3)
Entry |
Novembre et al. SPIE vol. 1087 Integrated Circuit Metrology, Inspection, and process Control III (1989) pp. 460-468 "An In Situ Interferometric Analysis of Resist Development on Photomask Substrates". |
"Optimized Endpoint Exposure for Photoresist Development" (27443) Research Disclosure, Feb. 1987, Number 274. |
Ed. L. F. Thompson, C. W. Wilson, M. J. Bowden, ACS Symposium Series 219, American Chemical Society, Washington, D.C. 1983, p. 204. |
Continuations (3)
|
Number |
Date |
Country |
Parent |
69665 |
Jun 1993 |
|
Parent |
873532 |
Apr 1992 |
|
Parent |
484707 |
Feb 1990 |
|