Generally, the present disclosure relates to the manufacturing of integrated circuits, and, more particularly, to the creation of photomasks for use in photolithographic processes.
Integrated circuits typically include a large number of circuit elements which include, in particular, field effect transistors. Other types of circuit elements which may be present in integrated circuits include capacitors, diodes and resistors. The circuit elements in an integrated circuit may be electrically connected by means of electrically conductive metal lines formed in a dielectric material, for example, by means of damascene techniques. The electrically conductive metal lines may be provided in a plurality of interconnect layers that are stacked on top of each other above a substrate in and on which the circuit elements are formed. Metal lines in different interconnect layers may be electrically connected with each other by means of contact vias that are filled with metal.
Due to the complexity of modern integrated circuits, in the design of integrated circuits, automated design techniques are typically employed.
The design of an integrated circuit typically employs a number of steps. These steps may include the creation of a user specification that defines the functionality of the integrated circuit. The user specification may be the basis for the creation of a register transfer level description that models the integrated circuit in terms of a flow of signals between hardware registers and logical operations performed on those signals. The register transfer level description of the integrated circuit may then be used for the physical design of the integrated circuit, wherein a layout of the integrated circuit is created. The thus-created layout may be the basis for the formation of photomasks that may be employed for patterning materials in the manufacturing of the integrated circuit by means of photolithography processes.
In a photolithography process, a photomask pattern is projected on to a layer of a photoresist that is provided over a semiconductor structure. Portions of the photoresist are irradiated with radiation that is used for projecting the photomask pattern on to the photoresist. Other portions of the photoresist are not irradiated, wherein the pattern of irradiated portions of the photoresist and portions of the photoresist that are not irradiated depends on a pattern of printing features provided on the photomask.
Thereafter, the photoresist may be developed. Depending on whether a negative or a positive photoresist is used, in the development process, either the non-irradiated portions or the irradiated portions of the photoresist are dissolved in a developer and, thus, removed from the semiconductor structure.
Thereafter, processes for patterning the semiconductor structure, which, in particular, may include one or more etch processes, may be performed, using the portions of the photoresist remaining on the semiconductor structure as a photoresist etch mask. Thus, features in accordance with the created layout of the integrated circuit may be formed on the semiconductor structure.
In the formation of small features in semiconductor structures, resolution enhancement techniques may be employed. These may include optical proximity correction (OPC), off-axis illumination (OAI), sub-resolution assist features (SRAF) or phase shift masks (PSM). However, lithographic hotspots, for example pinching (i.e., violation of minimal width conditions) or bridging (violation of minimum distance conditions), cannot be completely eliminated with these techniques. It has been shown that such hotspots may be pattern dependent.
Despite these problems, adequate design sampling and understanding of possible design options is essential for development and maintenance of the manufacturing process in general and OPC components and methods in particular. Some areas where adequate design space sampling is absolutely necessary are given in the following list: (1) site selection for process changes verification and monitoring; (2) site selection for lithography illumination optimization; (3) site selection for model building and verification; (4) site selection for SRAF and OPC recipe optimization; and (5) finding design spots that are very different from others, i.e., finding anomalies.
Well-known site selection strategies for either resolution enhancement technology (RET) and/or OPC development or fabrication process monitoring may rely on:
In fact, the following estimate indicates that this limit may be even lower. Typically computational complexity is on the order of: O(n2)-O(n3). However, the number of patterns layouts typically grows as n2. Therefore datasets larger than 105 at one shot appears hardly feasible.
In view of the above-discussed problems, the present disclosure provides an alternative approach. The present disclosure discloses methods which may be applied to sampling full chip physical designing layouts in semiconductor manufacturing.
The following presents a simplified summary of the invention in order to provide a basic understanding of some aspects of the invention. This summary is not an exhaustive overview of the invention. It is not intended to identify key or critical elements of the invention or to delineate the scope of the invention. Its sole purpose is to present some concepts in a simplified form as a prelude to the more detailed description that is discussed later.
An illustrative method disclosed herein includes a method that may include: (i) reading in a layout as current layout to be analyzed; (ii) splitting the current layout into n sub-layouts where n is a positive integer such that each sub-layout fits into a predetermined memory; (iii) performing a clustering step for each of the sub-layouts, including (a) scanning the respective sub-layout for features and converting each sub-layout into a set of feature vectors defining individual patterns, (b) searching each set of feature vectors for clusters having predetermined cluster parameters, and (c) selecting m characteristic representatives of patterns from each cluster, where m is a positive integer; (iv) merging the characteristic representatives of each of the n sub-layouts into a new single layout; (v) in case the new single layout of step (iv) does not fit into the predetermined memory, assign the new single layout as the current layout and continue with step (ii); (vi) searching the characteristic representatives discovered for the individual sub-layouts for clusters having predetermined cluster parameters; (vii) selecting M characteristic representatives of patterns from each cluster, where M is a positive integer; and (viii) outputting the characteristic representatives of patterns.
Furthermore, a computer-implemented method running on a computer system comprising a plurality of machines is disclosed. In one illustrative embodiment, the computer-implemented method may include: (i) reading in a layout from an external storage memory as current layout to be analyzed; (ii) splitting the current layout into n sub-layouts, where n is a positive integer, such that each sub-layout fits into a predetermined memory of a single machine; (iii) performing a clustering step for each of the sub-layouts, including (a) scanning the respective sub-layout for features and converting each sub-layout into a set of feature vectors defining individual patterns, (b) searching each set of feature vectors for clusters having predetermined cluster parameters, and (c) selecting m characteristic representatives of patterns from each cluster, where m is a positive integer; (iv) merging the characteristic representatives of each of the n sub-layouts into a new single layout; (v) in case the new single layout of step (iv). does not fit into the predetermined memory of a single machine, assign the new single layout as the current layout and continue with step (ii); (vi) searching the characteristic representatives discovered for the individual sub-layouts for clusters having predetermined cluster parameters; (vii) selecting M characteristic representatives of patterns from each cluster, where M is a positive integer; and (viii) outputting the characteristic representatives of patterns into a layout file.
The disclosed methods may also include unsupervised machine learning (UML) methods. Thereby, datasets to be explored and to be discovered may be analyzed with little or even no a priori knowledge. These methods may be capable of analyzing a layout of an entire chip. Moreover, these methods may be applied to any layer.
The disclosure may be understood by reference to the following description taken in conjunction with the accompanying drawings, in which like reference numerals identify like elements, and in which:
While the subject matter disclosed herein is susceptible to various modifications and alternative forms, specific embodiments thereof have been shown by way of example in the drawings and are herein described in detail. It should be understood, however, that the description herein of specific embodiments is not intended to limit the invention to the particular forms disclosed, but on the contrary, the intention is to cover all modifications, equivalents, and alternatives falling within the spirit and scope of the invention as defined by the appended claims.
Various illustrative embodiments of the invention are described below. In the interest of clarity, not all features of an actual implementation are described in this specification. It will of course be appreciated that in the development of any such actual embodiment, numerous implementation-specific decisions must be made to achieve the developers' specific goals, such as compliance with system-related and business-related constraints, which will vary from one implementation to another. Moreover, it will be appreciated that such a development effort might be complex and time-consuming, but would nevertheless be a routine undertaking for those of ordinary skill in the art having the benefit of this disclosure.
The present disclosure will now be described with reference to the attached figures. Various structures, systems and devices are schematically depicted in the drawings for purposes of explanation only and so as to not obscure the present disclosure with details which are well known to those skilled in the art. Nevertheless, the attached drawings are included to describe and explain illustrative examples of the present disclosure. The words and phrases used herein should be understood and interpreted to have a meaning consistent with the understanding of those words and phrases by those skilled in the relevant art. No special definition of a term or phrase, i.e., a definition that is different from the ordinary or customary meaning as understood by those skilled in the art, is intended to be implied by consistent usage of the term or phrase herein. To the extent that a term or phrase is intended to have a special meaning, i.e., a meaning other than that understood by skilled artisans, such a special definition shall be expressively set forth in the specification in a definitional manner that directly and unequivocally provides the special definition for the term or phrase.
As indicated in
As indicated already with respect to
V=(A0,A1,X1,Y1,A2,X2,Y2,A3,X3,Y3) or
V=(A0,A1,D1,A2,D2,A3,D3) with Dn2=Xn2+Yn2, where n=1,2,3.
In 33, due to clustering and selecting of representatives of 32, larger structures 34 are illustrated and a vector V′ with its length R′ is shown, as well. Still further in the iteration process, 35 illustrates even larger clusters and patterns 36 within the radius R″ of the vector V″. Thus, by finding clusters and selecting one or few representatives of the clusters, larger structures can be presented.
The start of the method is indicated by S801. In step S803, a predetermined layout is read in to become the layout to be analyzed. This layout may be read from a database, a storage medium, a cloud, etc. This layout may also be provided from specific third party layout designers. In step S805, the layout is split into sub-layouts or tiles (see
Step S805 is followed by a so-called data mining step S807. In this step, each sub-layout is treated separately. It should be understood that, for the sake of speed, the n machines may operate substantially in parallel. Data mining should be understood as searching for and extracting of features. The data of the layout is scanned through and converted into a set of feature vectors (
After having converted the data of the layout into feature vectors, the clustering follows in step S809. Data clustering is one of the types of unsupervised machine learning problems. It targets discovering data structure within data. Clustering operates in/on the space of feature vectors: X=(X1, X2 . . . Xl). It may be used to assign individual feature vectors to clusters. Therefore, the design space of each tile may be sampled by selecting characteristic representatives of each cluster (
As indicated in
Step S813 comprises merging of the representatives discovered and assigned in step S811 into one single layout. It is understood that this single layout is different from the initial layout of step S803. The layout in step S813 is sparser or coarser.
Step S815 checks whether or not the single layout of step S813 fits to a single machine/node of the computer system, meaning that it should fit into the effectively available memory of the machine. If it does not fit into it, the process starts another iteration and uses the single layout of step S813 as the new input layout for step S805. This new input layout is then—again split into sub-layouts.
If the check of step S815 is affirmative, the method proceeds with step S817. The clustering on the representatives is run one more time. Again, a number of M representatives may be selected, where M is a positive integer. These representatives may denote the discovered clusters or patterns (step S819).
Eventually, the patterns which were found and which are indicated by their representatives are output into a layout file and/or a site-list in step S8212. The method concludes with step S823.
The above-described method has been applied successfully to 22 nm design space sampling for patterning process screening. The method served so as to confirm the process has sufficient margin. It also has been applied successfully to 22 nm design space sampling for resist benchmarking and comparing various model performances, so as to discover locations having insufficient margin post etching steps.
This method may be used for selecting representative design sites from incoming designs and using the output of said characteristic representatives of patterns for at least one of determining process changes, monitoring optical proximity correction performance monitoring and controlling optical proximity correction development.
The above-described method may be implemented by using any appropriate programming environment, e.g., MATLAB® or similar environments, but may also be implemented using a higher programming language.
The particular embodiments disclosed above are illustrative only, as the invention may be modified and practiced in different but equivalent manners apparent to those skilled in the art having the benefit of the teachings herein. For example, the process steps set forth above may be performed in a different order. Furthermore, no limitations are intended to the details of construction or design herein shown, other than as described in the claims below. It is therefore evident that the particular embodiments disclosed above may be altered or modified and all such variations are considered within the scope and spirit of the invention. Note that the use of terms, such as “first,” “second,” “third” or “fourth” to describe various processes or structures in this specification and in the attached claims is only used as a shorthand reference to such steps/structures and does not necessarily imply that such steps/structures are performed/formed in that ordered sequence. Of course, depending upon the exact claim language, an ordered sequence of such processes may or may not be required. Accordingly, the protection sought herein is as set forth in the claims below.