Claims
- 1. A semiconductor device comprising a layer of p-type semiconductor material, said semiconductor being selected from the group consisting of InP and InGaAsP, and an ohmic contact to said semiconductor characterized in that said ohmic contact comprises:
- a layer of beryllium-gold; and
- a layer of gold.
- 2. A semiconductor device as recited in claim 1 in which said ohmic contact further comprises a layer of palladium.
Parent Case Info
This application is a division of application Ser. No. 79,451, filed Sept. 27, 1979, now U.S. Pat. No. 4,366,186.
US Referenced Citations (9)
Divisions (1)
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Number |
Date |
Country |
Parent |
79451 |
Sep 1979 |
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