Claims
- 1. A bipolar transistor comprising:
- at least an emitter and a base, said base having at least one highly doped part, said emitter and the highly doped part of the base being separated by a selectively shaped area of polycrystalline silicon, said area not being an active part of a semiconductor component;
- wherein an oxide layer of substantially the same dimensions as the selectively shaped area is located between the component and the polycrystalline silicon; and
- wherein a nitride layer of substantially the same dimensions as the selectively shaped area is located between the oxide layer and the polycrystalline silicon.
- 2. A bipolar transistor comprising at least an emitter and a base, said base having at least one highly doped part, said emitter and the highly doped part of the base being separated by a selectively shaped area of polycrystalline silicon, said area not being an active part of the semiconductor component;
- wherein the selectively shaped area comprises a silicide layer.
- 3. A bipolar transistor according to claim 1, wherein the layer of polycrystalline silicon comprises dopants of the types used in the base and in the emitter.
- 4. A bipolar transistor according to claim 1, comprising a carrier substrate layer comprising an insulator layer.
- 5. A bipolar transistor according to claim 4, wherein the insulator layer is SiO.sub.2.
Priority Claims (1)
Number |
Date |
Country |
Kind |
9700773 |
Mar 1997 |
SEX |
|
Parent Case Info
This is a division of application Ser. No. 09/033,714, filed Mar. 3, 1998, now pending.
US Referenced Citations (7)
Foreign Referenced Citations (3)
Number |
Date |
Country |
0 034 508 A1 |
Aug 1981 |
EPX |
0 122 004 A2 |
Oct 1984 |
EPX |
9306622 |
Apr 1993 |
WOX |
Divisions (1)
|
Number |
Date |
Country |
Parent |
033714 |
Mar 1998 |
|