Scaling of CMOS devices is becoming increasingly difficult because of increased number of devices in a small substrate area. Current silicon-based transistors are limited to about 14-22 nm technology nodes. Different semiconductor materials on the chip level or wafer level are necessary to overcome the scaling limits of silicon (Si) semiconductor. A semiconductor material may include two or more elements to form a compound semiconductor. For example, III-V compound semiconductors are compound semiconductors composed of elements from both Group III and Group V of the Periodic Table and can interact to form crystalline compounds. III-V semiconductors, such as gallium nitride (GaN) or indium gallium arsenide (InGaAs), have much higher electron mobility than silicon, and can be fashioned into faster, smaller, and lower-power transistors. These III-V semiconductors are already used in high-performance settings, such as light-emitting diodes (LEDs), high-electron-mobility transistors (HEMTs), and military radio transceivers. However, due to the higher production costs, susceptibility to density defects, and other factors, they have not made the leap to consumer products.
The heterogeneous integration of III-V semiconductor and Si semiconductor will enable the realization of radiofrequency (RF) and mixed signal circuits that take advantage of the superior performance of III-V semiconductor devices and the high integration density of Si semiconductor devices, such as complementary metal-oxide semiconductor (CMOS) on silicon. The increased device density in compound semiconductors requires higher power supply where reduction of power consumption and interconnect wiring length are challenging. A possible solution is to vertically stack the devices in a 3D integration scheme. 3D design requires direct bonding of III-V semiconductors on Si substrates (III-V-and-Si). Important issues need to be considered such as bonding surface smoothness, thermal budget, and reduction of current leakage. In addition, several back-end-of-line (BEOL) process steps must be completed after wafer bonding of III-V-and-Si CMOS processed wafer. Further, III-V-and-Si wafers are fragile and susceptible to breakage during BEOL process rendering the failure of process to directly integrate III-V-and-Si circuits at the wafer level.
For the above stated reasons, it is desirable to simplify and de-risk the integration process of III-V semiconductor devices with Si semiconductor devices to leverage on the mature Si technology.
This invention generally relates to semiconductor wafer bonding and more particularly, but not limited to, methods of bonding a silicon wafer to a III-V semiconductor wafer. The III-V-and-Si substrate device is a 3D integration of a silicon transistor and a III-V substrate transistor. For example, the silicon transistor may be a CMOS transistor and the III-V transistor may be a GaN transistor.
A III-V-and-Si substrate device includes integration of a backend unit and a frontend unit. The backend unit and frontend unit are formed in parallel. The backend unit includes interlevel dielectric (ILD) layers having metal lines and via contacts. The ILD layers are formed on a backend carrier substrate, such as silicon, having the uppermost ILD level disposed on a dielectric layer sequentially to the lowest ILD level, with the uppermost level metal line on the bottom closest to the backend carrier substrate and lowest level metal line on the top.
The frontend unit includes a CMOS subunit and a III-V subunit. A CMOS subunit includes CMOS devices disposed in a first surface of a silicon wafer substrate. Bonding dielectric layers are formed on first and second surfaces of the substrate. A III-V subunit includes III-V devices disposed in a first surface of a III-V wafer substrate. A III-V wafer substrate includes a III-V layer disposed on a silicon substrate with a buffer layer there between. The III-V subunit has bonding dielectric layers covering the III-V devices on the first surface.
In one embodiment, for example Approach 1, the frontend unit is formed by bonding a processed CMOS subunit and an unprocessed III-V subunit. The second surface of CMOS subunit is bonded to the first surface of the III-V subunit. III-V device regions are exposed on the III-V substrate by removing a portion of CMOS substrate using mask and etch techniques. III-V devices are then formed in the III-V device regions. A pre-metal dielectric layer (PMD) of the CMOS subunit is continuous with and having the same height as a dielectric layer covering the III-V subunit. A frontend unit includes first level metal lines disposed on top of the dielectric layer connecting to the CMOS and III-V subunits, using via contacts.
In another embodiment, for example Approach 2, a III-V substrate is processed before bonding to a processed CMOS subunit. III-V devices are disposed in a first surface of the III-V substrate and covered by bonding dielectric layers. The second surface of the CMOS subunit is bonded to the first surface of the III-V subunit. A PMD of the CMOS subunit is continuous with and having the same height as a dielectric layer covering the III-V subunit. A frontend unit includes first level metal lines disposed on top of the dielectric layer connecting to the CMOS and III-V subunits, using via contacts.
The frontend unit formed, for example in Approach 1 or Approach 2, is bonded to the backend unit to form the III-V-and-Si substrate device. Bonding dielectrics include silicon oxides, silicon nitrides, aluminum oxides, or a combination thereof. The bonding processes are generally performed by fusing bonding dielectric layers under low temperatures and followed by an anneal, for example, thermo-anodic or anodic bonding. Bonding surfaces have high smoothness before bonding. Multiple bonding and annealing steps may be performed from a lower temperature to a higher temperature. Substrates may be thinned after bonding to relieve thermal tension from mismatched thermal coefficients of the substrates.
These and other advantages and features of the embodiments herein disclosed, will become apparent through reference to the following description and the accompanying drawings. Furthermore, it is to be understood that the features of the various embodiments described herein are not mutually exclusive and can exist in various combinations and permutations.
In the drawings, like reference characters generally refer to the same parts throughout the different views. Also, the drawings are not necessarily to scale, emphasis instead generally being placed upon illustrating the principles of the invention. Various embodiments of the present invention are described with reference to the following drawings, in which:
Embodiments generally relate to semiconductor devices or integrated circuits (ICs). More particularly, some embodiments relate to heterogeneous integration of devices by bonding a silicon (Si) wafer to a III-V semiconductor wafer. For example, the silicon wafer may include silicon devices, such as, but not limited to, metal oxide transistors (MOS), or complementary metal oxide transistors (CMOS). The III-V wafer may include III-V compound devices such as, but not limited to, gallium nitride (GaN) or indium gallium arsenide (InGaAs) devices. The integration of GaN and Si wafers may be employed in analog applications, such as DC/DC converters with GaN output switches, integrated RF frontend with GaN power amplifiers, Class-D amplifiers with GaN output switches, LED drivers integrated with LEDs for advanced displays, high performance analog to digital converters, audio amplifiers or audio Codex. These high gain transistors can be easily integrated into devices or ICs with core or digital devices.
Isolation regions, for example, serve to isolate different device regions. The isolation regions may be shallow trench isolation (STI) regions. To form STI regions, trenches are formed and filled with isolation dielectric material. A planarization process, such as chemical mechanical polishing (CMP) is performed to remove excess dielectric material, forming isolation regions. Other types of isolation regions may also be useful. Isolation regions may be provided to isolate columns of memory cells. The device well may be a common well for the device regions in the array region. For example, the device well may be an array well. The device isolation well may serve as the array isolation well. Other configurations of device and isolation wells may also be useful. Other device regions of the device may also include device and/or device isolation wells.
As shown in
The device may include doped regions having different dopant concentrations. For example, the device may include heavily doped (x+), intermediately doped (x) and lightly doped (x-) regions, where x is the polarity type which can be p or n. A lightly doped region may have a dopant concentration of about 1E15-1E17/cm3, an intermediately doped region may have a dopant concentration of about 1E17-1E19/cm3, and a heavily doped region may have a dopant concentration of about 1E19-1E21/cm3. Providing other dopant concentrations for the different types of doped regions may also be useful. For example, the ranges may be varied, depending on the technology node. In addition, the ranges may vary based on the type of transistors or devices, such as high voltage, intermediate voltage or low voltage transistors. P-type dopants may include boron (B), aluminum (Al), indium (In) or a combination thereof, while n-type dopants may include phosphorous (P), arsenic (As), antimony (Sb) or a combination thereof.
A device well (not shown) may be disposed in a device region. A device well is a second polarity type doped well which serves as a body for a first polarity type device. For example, a p-type device well is provided for a n-type transistor or a n-type device well is provided for a p-type transistor. In some cases, a device well may be provided by the starting substrate. For example, if the starting substrate includes the appropriate doping type and concentration, it may serve as a device well. The dopant concentration of the device wells may be light to intermediate. In one embodiment, the different types of device wells have different dopant concentrations.
A gate of a transistor is disposed on the substrate surface in the device region. For example, the gate is disposed over the device well. A gate includes a gate electrode over a gate dielectric. The gate electrode, for example, may be polysilicon while the gate dielectric may be silicon oxide. Other types of gate electrodes or gate dielectrics may also be useful. For example, the gate electrode may be a metal gate electrode and the gate dielectric may be a high k gate dielectric. Dielectric sidewall spacers are disposed on sidewalls of the gate. The sidewall spacers, for example, may be silicon oxide. Other types of dielectric materials or combination of materials may be used for the spacers.
A transistor includes first and second source/drain (S/D) regions disposed in the device well adjacent to the first and second sides of the gate. In one embodiment, a S/D region includes a main S/D region and an extension S/D region. The main and extension regions are first polarity type doped regions. The main region is a heavily doped region while the extension region is a lightly doped region. The extension S/D region may be referred to as a lightly doped drain (LDD) extension region. The main S/D region is disposed adjacent to about an outer edge of the dielectric sidewall spacer and the gate overlaps the extension region. The gate, for example, overlaps the extension region by about 10 Å. Overlapping the extension region by other distances may also be useful.
Mask and implant techniques may be employed to form the main S/D regions in the device region. For example, a mask exposing the device region is used for the implant. The implant forms heavily doped main S/D regions in the device region. The dopant concentration of the main S/D region may be about 1E20/cm3. The main S/D regions may have a depth of about 200 nm. Other dopant concentrations and depths for the main S/D regions may also be useful. After forming the main S/D regions, the implant mask is removed by, for example, ashing. Other techniques for removing the implant mask may also be useful.
After forming the S/D regions, an annealing process, such as rapid thermal anneal (RTA), may be performed to activate the dopants in the S/D regions. The inner edges of the doped regions, for example, may extend under the dielectric spacers due to diffusion of the dopants from the doped regions.
In some embodiments, a dielectric etch stop layer is formed over the transistors. The etch stop layer, for example, is a silicon nitride etch stop layer. Other types of etch stop layers may also be useful. The etch stop layer should have a material which can be selectively removed from a dielectric layer thereover. The etch stop layer facilitates in forming contact plugs to contact regions of the transistor, such as the gate electrode and doped regions. In some embodiments, the etch stop layer may also serve as a stress layer for applying a stress on the channel of the transistor to improve performance.
Metal silicide contacts may be formed on the S/D regions and on the gate electrodes. The metal silicide contacts, for example, may be nickel-based contacts. Other types of metal silicide contacts may also be useful. For example, the metal silicide contact may be cobalt silicide (CoSi). The silicide contacts may be about 50-300 Å thick. Other thicknesses may also be useful. The metal silicide contacts may be employed to reduce contact resistance and facilitate contact to the BEOL metal interconnects. For example, a dielectric layer 150 may be provided over the transistors. Via contacts, such as tungsten contacts, may be formed in the dielectric layer coupling the contact regions of the transistors to metal lines disposed in metal layers of the device.
Shown in
A buffer layer may be formed on the base substrate 105 and a III-V layer is formed thereover. The buffer layer is used as a transition layer to accommodate the lattice mismatch of the base substrate and III-V layer. Buffer and the III-V layers may be formed by metal-organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE). MOCVD/MBE is used to deposit very thin layers of III-V molecules or atoms onto a semiconductor wafer. The wafers, for example, may be thin disks mostly made of sapphire or silicon. III-V compounds include gallium arsenide (GaAs), indium phosphide (InP), gallium nitride (GaN) and related alloys. Buffer layers, for example, may include aluminium oxide (Al2O3), aluminum nitride (AlN), aluminium indium arsenide (AlInAs), GaN, indium gallium nitride (InGaN) or other oxides or nitrides. The chemicals are vaporized and transported into the reactor together with other gases. There, the critical chemical reaction takes place that turns the chemicals into the desired crystal (the III-V compound semiconductor). The layers may be built up with each layer of a precisely controlled thickness. For example, using existing silicon processing equipment, a thin layer of AlN is grown on the silicon to isolate the device structure from the substrate. A thick layer of highly resistive GaN is grown thereover. This layer provides a foundation on which to build the GaN transistor. An electron generating material is applied to the GaN. For example, a barrier layer, such as aluminium gallium arsenide (AlGaN), is built over the GaN layer. This AlGaN layer creates a GaN layer with an abundance of electrons at the interface of AlGaN/GaN that is highly conductive. Other materials may also be used in barrier and for the III-V layers.
As such, compound semiconductors have significant advantages over silicon. Devices containing III-V semiconductors can “process” very high frequencies in devices, for examples, in mobile phone, because electrons can move very fast in III-V materials. Moreover, they can also function at very high temperatures. Most importantly, they are highly efficient at converting light energy to electrical energy and vice-versa—the basis for high-performance solar cells and all LEDs.
The III-V semiconductor wafer has a plurality of isolation regions formed therein by photolithography and etch processes. The isolation regions define active device regions where active III-V devices will be disposed. In one embodiment, the device regions in the III-V substrate are isolated from other regions by isolation regions. The isolation regions may be shallow trench isolation (STI) trenches. Other isolation regions may also be useful. For example, the isolation regions may be deep trench isolation (DTI) regions. The STI regions, for example, extend to a depth of about 2000-5000 Å. Providing isolation regions which extend to other depths may also be useful.
A mesa is formed in the device region of the III-V layer by etching away, with the aid of a reactive gas plasma, the semiconductor material surrounding a masked area. Other mesa etching techniques may also be employed, such as wet chemical etching and fast atom beam etching. After mesa formation and while the etch-masking layer is in place, the exposed silicon is subjected to an oxidation treatment to grow a dielectric passivation layer. After the passivation formation, the mask layer is removed by etching method, for example, acid etching with phosphoric acid.
Source and drain (S/D) ohmic contacts (not shown) are formed in the device region typically by depositing thin metal films of a carefully chosen composition, possibly followed by annealing. For example, GaN ohmic contact materials include Ti/Al/Ni/Au, Pd/Au. These metal-semiconductor ohmic contacts are made by direct contact between the metals without intervening insulating or oxidation layers. Other techniques such as sputtering, CVD, PVD, electron beam evaporation, electroplating or others are also useful. A metal contact is formed for gate Schottky contact using similar techniques. Barrier layers are disposed above and below the gate to isolate the gate and source and drain regions. Both ohmic and Schottky contacts are dependent on the Schottky barrier height which sets the threshold for the excess energy an electron requires to pass from the semiconductor to the metal. For the junction to admit electrons easily in both directions (ohmic contact), the barrier height must be small in at least some parts of the junction surface.
The bonding dielectric layer is then formed on III-V semiconductor wafer and in STIs by a deposition process. The preferred embodiment of bonding dielectric layer comprises a nitride/oxide layer. After the bonding dielectric layer is formed, a planarizable layer (not shown) may be formed over the bonding dielectric layer. Planarizable layer may comprise polysilicon, silicon nitride, or reflowable glass. In one embodiment, planarizable layer may not fill the STI previously filled by dielectric materials in a processed III-V device (
Continuing with
The backend unit 160 is illustrated in
An ILD level includes a metal level and a via level. Generally, the metal level includes conductors or metal lines while the via level includes via contacts. The conductors and contacts may be formed of a metal, such as copper, copper alloy, aluminum, tungsten or a combination thereof. Other suitable types of metal, alloys or conductive materials may also be useful. In some cases, the conductors and contacts may be formed of the same material, for example, where the conductors and contacts are formed by dual damascene processes. In some cases, the conductors and contacts may have different materials, for example, where the contacts and conductors are formed by single damascene processes. Other techniques, such as reactive ion etch (RIE) may also be employed to form metal lines.
A backend unit may include a plurality of ILD layers or levels. For example, x number of ILD levels may be provided. As illustrated in
The upper ILD layer may have different design rules, such as critical dimension (CD), than the intermediate ILD layers. For example, upper ILD layer may have a larger CD than the intermediate ILD layers. For example, the upper ILD layer may have a CD which is 2x or 6x the CD of the intermediate ILD layers. Shown in
Metal lines are formed by patterning and lithographic techniques. Metal conductive layers are deposited on the ILD dielectric layer. A soft mask layer is formed on the conductive layer. The soft mask layer, in one embodiment, is a photoresist layer. The soft mask is patterned to form openings while covering portions of the conductive layer. To form the openings in the soft mask layer, it may be selectively exposed with an exposure source using a reticle. The pattern of the reticle is transferred to the photoresist layer after exposure by a development process. An anti-reflective coating (ARC) may be provided beneath the resist layer to improve lithographic resolution. The patterned resist layer serves as an etch mask. For example, an anisotropic etch, such as RIE, patterns the conductive layer using the etch mask. The patterned resist is used to define one or more metal lines by removing portions of the conductive layer not protected by the patterned resist. The portion of the conductive layer under the patterned resist remains and forms the metal line 174 as shown in
Via contacts are formed from one or more via openings through the dielectric layer. To form one or more via openings, mask and etch techniques can be employed. For example, a mask, such as a photoresist, can be used to form the via opening. The mask is selectively exposed and developed to create the desired via opening patterns. The mask, for example, includes a pattern which protects or covers the dielectric layer except where via openings are to be formed. Exposed portions of the dielectric layer are removed by, for example, a dry etch or RIE. For example, via opening is formed through the dielectric layer and the underlying dielectric layer, exposing portion of the metal line 174x-1. Tungsten materials may be deposited in the via openings to form the via contacts 172x. The mask is removed using suitable techniques, such as ashing.
In
In
After the carrier substrate is bonded to the first surface of a processed CMOS substrate, a bonding dielectric layer 242 is formed on the second surface of the CMOS substrate as shown in
The process continues in
A mesa is formed by etching away, with a reactive gas plasma, the semiconductor material surrounding a masked area. Other mesa etching techniques may also be employed, such as wet chemical etching and fast atom beam etching. After mesa formation and while the etch-masking layer is in place, the exposed III-V region is subjected to an oxidation treatment to grow a dielectric passivation layer. After the passivation formation, the masking layer is removed by etching method, for example, acid etching with phosphoric acid. III-V devices are disposed in the III-V region between the isolation regions 328 as part of the III-V subunit 120.
S/D ohmic contacts (not shown) are formed in the device region typically by depositing thin metal films of a carefully chosen composition, possibly followed by annealing. For example, GaN ohmic contact materials include Ti/Al/Ni/Au, Pd/Ti/Au. These metal-semiconductor ohmic contacts are made by direct contact between the metals without intervening insulating or oxidation layers. Other techniques such as sputtering, CVD, PVD, electron beam evaporation, electroplating or others are also useful. A metal contact is formed for gate Schottky contact using similar technique. Barrier layers are disposed above and below the gate to isolate the gate and S/D regions. Both ohmic and Schottky contacts are dependent on the Schottky barrier height which sets the threshold for the excess energy an electron requires to pass from the semiconductor to the metal. For the junction to admit electrons easily in both directions (ohmic contact), the barrier height must be small in at least some parts of the junction surface.
The bonding dielectric layer 321 is then formed on III-V semiconductor wafer and in STIs by a deposition process. The preferred embodiment of bonding dielectric layer comprises a nitride/oxide layer. After the bonding dielectric layer is formed, a planarizable layer (not shown) may be formed over the bonding dielectric layer. The planarizable layer may comprise polysilicon, silicon nitride, or reflowable glass. In one embodiment, the planarizable layer 321 may not fill the STI previously filled by dielectric materials in a processed III-V device (
As such, a bonding dielectric layer 321 is formed on the first surface of the processed III-V semiconductor substrate wafer as shown in
In
Shown in
Continuing with
The metal line in M7 level, for example, may be referred to as the top metal line. The via contact in V6 level, for example, may be referred to as the top via contact. The dimensions of this metal line and its underlying via contact, for example, may be defined at twice the minimum line resolution of the lithography and etch capability for a technology process node, which may be referred to as 2× design rule. For example, the thickness of the top metal line may be at least 2 times greater than the thickness of the metal line below. The top via contact and top metal line include a conductive material, such as Cu. Other suitable configurations and conductive materials for the via contact and metal line may also be useful.
Illustrated in
The bottom portion of
Shown in
The CMOS silicon substrate and the III-V substrate are then placed in contact with the bonding dielectric layers in between. Bonding may be performed using anodic or thermo-anodic bonding process. An annealing process at relatively low temperature may be applied. The anneal temperature is slightly above room temperature or about less than 350° C. Multiple anneal cycles may be applied starting from lower temperature to higher temperature, for example, from 150-400° C.
The silicon wafer and the III-V semiconductor wafer are bonded together by using a fast thermal or a thermo-anodic bonding process under low temperature, for example, between 200-450° C. or lower. The bonding dielectric layer is positioned between the first surface of the III-V substrate wafer and the second surface of the CMOS substrate wafer. Bonding dielectric layer comprises solely or a combination of silicon dioxide, doped silicon dioxide, silicon nitride, polysilicon, or amorphous silicon. More preferably, the bonding dielectric layer consists of a silicon nitride layer formed on III-V wafer and a silicon dioxide layer formed on the silicon nitride layer. Other materials may also be used for the bonding dielectric layer.
After the initial bonding, the bonding process gives enough strength in the bond to allow for thinning of III-V wafer and/or CMOS wafer. The thinning process can relieve the thermal stress caused by mismatched thermal coefficients of the substrates. In
In III-V devices, for example, GaN transistors use metal gates while CMOS transistors use polysilicon or silicide. A positive bias on the gate relative to the source causes a field effect which attracts electrons that complete a bidirectional channel between the drain and the source. Since the electrons are pooled, as opposed to being loosely trapped in a lattice, the resistance of this channel is quite low. When the bias is removed from the gate, the electrons under it are dispersed into the GaN, recreating the depletion region, and once again, giving it the capability to block voltage. The benefit to this mechanism is that there are no minority carriers involved in conduction, and therefore, no reverse recovery losses.
Formation of metal-semiconductor ohmic contacts are made by direct contact between the metals without intervening layers of insulating contamination or oxidation; various techniques are used to form ohmic metal-metal junctions such as sputtering, CVD, PVD, electron beam evaporation, electroplating and others. Ohmic contacts to semiconductors are typically constructed by depositing thin metal films of a carefully chosen composition, possibly followed by annealing to alter the semiconductor bond. Both ohmic contacts and Schottky barriers are dependent on the Schottky barrier height which sets the threshold for the excess energy an electron requires to pass from the semiconductor to the metal. For the junction to admit electrons easily in both directions (ohmic contact), the barrier height must be small in at least some parts of the junction surface. GaN contact materials include Ti/Al/Ni/Au, Pd/Au.
After III-V devices are formed, the process continues to form the frontend unit 110. In
The contacts may be formed by a single damascene process. Via openings are formed in the dielectric layer using mask and etch techniques. For example, a patterned resist mask with openings corresponding to the vias is formed over the dielectric layer. An anisotropic etch, such as reactive ion etch (ME), is performed to form via openings, exposing contact regions below, such as S/D regions and gates. A conductive layer, such as tungsten, is deposited on the substrate filling the openings. The conductive layer may be formed by CVD. Other suitable techniques may also be useful. A planarization process, such as chemical mechanical planarization (CMP), is performed to remove excess conductive material, leaving contact plugs in the CA level 651 and the dielectric layer 150.
Continuing with
Referring to
For copper bonding ultra-high vacuum (UHV) in a UHV plasma with an argon (Ar) ion beam is used to remove the copper oxide. The bonding is then conducted at room temperature anneal under high vacuum, a low temperature around 200° C. Direct bonding of oxide/copper surfaces at room temperature and ambient air may also be used.
The process continues by removing the backend carrier substrate 501 and a portion of the dielectric layer 508 as shown in
The embodiments as described in this disclosure result in various advantages. For example, high yield is possible with almost no breakage of GaN on Si wafers because the metal layers are fabricated separately and bonded to the GaN integrated CMOS wafers. The process illustrates a new approach to directly integrate multiple wafers which are processed in parallel, including interconnect metal layers. For example, six pairs of interconnect metal layers can be separated by thick dielectrics. The process time is reduced because the interconnect metal layers can be processed in parallel with the GaN integrated CMOS wafers. Si circuits, III-V wafer bonding and III-V devices can be fabricated using existing techniques and manufacturing equipment. For example, Si CMOS circuits can be fabricated by conventional CMOS or BCD (bipolar CMOS DMOS) processing. Bond pads are designed to directly integrate III-V wafers. The originally complicated process flows can be simplified and, thus, lower cost. The present embodiments can reduce breakage risk of Si III-V bonded wafer, produce large, high-density III-V substrate arrays and high-performance microprocessors.
The invention may be embodied in other specific forms without departing from the spirit or essential characteristics thereof. The foregoing embodiments, therefore, are to be considered in all respects illustrative rather than limiting the invention described herein. Scope of the invention is thus indicated by the appended claims, rather than by the foregoing description, and all changes that come within the meaning and range of equivalency of the claims are intended to be embraced therein.