An embodiment of the invention relates to techniques for automated measurement of relatively small capacitance such as the parasitic gate-drain capacitance in thin film transistors. Other embodiments are also described.
Flat panel displays such as liquid crystal display (LCD), plasma, and organic light emitting diode (OLED) types are typically used in consumer electronics devices, such as desktop computers, television sets, and portable devices such as smart phones, tablet computers, and notebook computers. A flat panel display contains an array of display elements, where each element receives a signal that represents a digital picture element to be displayed at that location. In active matrix displays, the picture element signal is delivered as a data line signal that is applied to a carrier electrode of a thin film transistor (TFT) that is part of the display element (also referred to as a pixel TFT). Another carrier electrode of the transistor is connected to a charge storage circuit within the display element, such as a liquid crystal capacitor. A select signal at the control electrode of the transistor, also referred to as a gate line signal, modulates or turns on or off the TFT, so as to apply the data line signal to the charge storage circuit in order to produce an analog pixel signal across the liquid crystal capacitor, to thereby control the contribution of that display element to the overall display image. Thousands or millions of copies of such display elements are reproduced in the form of an array, and in the case of LCD panels on a transparent substrate, such as a plane of glass or plastic. This array is overlaid with a grid of conductive data lines and gate lines, where each data line delivers the picture element signals to the source electrodes of the TFTs in a column, while the drain electrode of each TFT is connected to its associated liquid crystal storage cell, and each of the gate lines serves to apply a scanning-type select signal to the gate electrodes of a row of TFTs.
The display elements and the grid of data lines and gate lines, together with their associated gate line and data line driver circuitry, are typically formed using microelectronic semiconductor processing techniques directly on the transparent substrate. However, microelectronics formed on a glass substrate do not behave the same as those formed on a semiconductor substrate such as silicon. The TFTs on glass have inconsistent performance and are likely to degrade quickly over time and with use. As a result, the quality, accuracy and appearance of such a display panel may change as the behavior of its constituent TFTs changes.
The degradation of a TFT can result in slow and inconsistent response times by the TFT, such as when a TFT in a display element is responding to its gate line driver signal. It has been found, for example, that the gate line drive voltage may need to be increased in order to obtain the same response, as the TFT degrades due to an increase in its parasitic gate drain capacitance, referred to here as Cgd. In particular, the degradation in Cgd slows the reaction time of the TFT, particularly when the transistor is being switched off. Better performance could be obtained by monitoring or tracking an estimate of Cgd that is representative of the TFTs used in the active region of the display panel, as the display system is being used during its normal life cycle, and then adjusting, for example, the gate line drive signals so as to compensate for expected changes or degradation in the Cgd of the active area TFTs.
An embodiment of the invention is a technique for automatically measuring a relatively small capacitance (such as found in the Cgd of a TFT). The measurement is made using a measurement or test circuit that may be integrated with the display system, so as to allow the monitoring of a degrading capacitance over the life cycle of the display system. While the techniques described here may also be used to obtain a measure or an estimate of capacitance in any device under test (DUT), they are particularly suitable for integration into a display system, to measure Cgd of a TFT. For greater accuracy, the measurement circuit may be implemented on a silicon microelectronics substrate separate from the display panel substrate (e.g., glass substrate) on which the TFT under test is actually present, using a mature digital microelectronics fabrication process such as a complimentary metal oxide semiconductor (CMOS) process.
In one embodiment, the measurement circuit has a resistor having a known resistance, and that is to be coupled in series with the DUT having an unknown capacitance. An ac signal source having a known fundamental frequency is coupled to drive the resistor, to thereby produce a first ac signal at the resistor. A phase controllable signal generator is provided, that produces a second ac signal. In one embodiment, the second ac signal has a known fundamental frequency that may be about the same as that of the first ac signal, and also has a known phase relative to that of the ac signal source. The first and second ac signals are then fed to respective inputs of a mixer. An output of the mixer is then low-pass filtered, and is monitored by a peak detector. The peak detector has an output that is coupled to control the variable phase of the second ac signal, through the phase controllable signal generator.
The phase shift produced by the signal generator is swept, while the peak detector monitors the low pass filter output, until a maximum or peak is detected. The set phase value that produces the peak is referred to as φmax—this value, which may be provided at the output of the peak detector, is then used to obtain a measure of the unknown capacitance of the DUT. For instance, φmax can be used to access a previously determined lookup table, to thereby read out a corresponding capacitance value. The lookup table may have been determined using a mathematical relationship that gives capacitance as a function of several variables including φmax, the resistance of the resistor, and the fundamental frequency. As an alternative to the lookup table, the estimated DUT capacitance can be computed directly using the mathematical relationship.
In one embodiment, the ac signal source contains a square wave generator having an output that feeds a band pass filter through a frequency divider. This arrangement avoids the need for analog circuitry to directly produce the first ac signal, which may be a narrowband or single tone (or essentially a single sinusoid) voltage source signal. To further take advantage of the mature circuit elements available with typical large scale integration digital microelectronic fabrication processes, the phase controllable signal generator may be implemented using a digital phase shifter. The phase shifter may have a first control input coupled to an output of the square wave generator to receive a high frequency step or resolution signal, a second control input that is coupled to the output of the peak detector, and a signal input that is coupled to an output of the frequency divider. Such an implementation makes good use of circuit elements that are readily available in standard digital microelectronics fabrication processes.
Some additional benefits of using the above-described techniques for capacitance measurement may include improved accuracy in the measurement or estimation of relatively small capacitance values (e.g., such as the Cgd of thin film transistors), reduced chip real estate or area overhead, and increased immunity to measurement errors and offset or mismatch errors. The latter benefit may be especially due to the use of the peak detector while sweeping the set phase of the phase controllable signal generator, to the find the set phase value (φmax) that yields a peak or maximum in the low pass filtered signal, and then using the mathematical relationship that yields the capacitance estimate as a function of the known and well-controlled values for fundamental frequency of the ac signals and the resistance.
In addition, offset or mismatch errors may be reduced by using a correction technique, which helps compensate for unwanted parasitics. These unwanted parasitics may be due to the wiring that connects the DUT to the measurement circuitry, or where there may be non-negligible input capacitance at the input of the mixer.
In a further embodiment, the phase controllable signal generator and the peak detector are not needed. Instead, the two mixer inputs are coupled to the terminals of the resistor, respectively, so that the phase shift caused by the unknown DUT capacitance is obtained at the output of the low pass filter (e.g., as part the dc component of the mixer output). The estimate of the DUT capacitance may then be computed using essentially the same mathematical relationship given above, as a function of the same variables, namely resistance of the resistor, the fundamental frequency, and the phase shift (obtained from the dc component of the low pass filter output) as φmax.
The above summary does not include an exhaustive list of all aspects of the present invention. It is contemplated that the invention includes all systems and methods that can be practiced from all suitable combinations of the various aspects summarized above, as well as those disclosed in the Detailed Description below and particularly pointed out in the claims filed with the application. Such combinations have particular advantages not specifically recited in the above summary.
The embodiments of the invention are illustrated by way of example and not by way of limitation in the figures of the accompanying drawings in which like references indicate similar elements. It should be noted that references to “an” or “one” embodiment of the invention in this disclosure are not necessarily to the same embodiment, and they mean at least one.
Several embodiments of the invention with reference to the appended drawings are now explained. While numerous details are set forth, it is understood that some embodiments of the invention may be practiced without these details. In other instances, well-known circuits, structures, and techniques have not been shown in detail so as not to obscure the understanding of this description.
A resistor 2 having a known resistance R is coupled in series with the DUT 1 as shown. The resistor 2 may be a lumped passive element, or it may be an active circuit that includes one or more transistors or diodes although it should exhibit linear behavior during the measurement process described here. An ac signal source 3 produces an ac voltage signal Vin having a known fundamental frequency ω (or period T=2π/ω), and is coupled to drive the resistor 2 at one terminal, to thereby produce a first ac voltage signal V1 at another terminal of the resistor 2. In this case, the ac signal source 3 is also referenced to ground. The resistance 2 should be selected to be of the order of the impedance of CDUT at ω, and preferably close to the impedance of CDUT at ω. It should also not be too large, as compared to any parasitic resistances (not shown).
The ac signal source 3 may generate a pure sinusoid or single tone, but in practice this may not be practical in certain situations. As explained below, an alternative is to implement the ac signal source by passing a square wave signal (e.g., a binary clock signal) of the desired (and known) fundamental frequency, through a bandpass filter (e.g., an analog bandpass filter having a sufficiently narrow pass band) that will pass at least the fundamental frequency component (e.g., it may be narrow band centered at the fundamental frequency). Another approach is to use the square wave signal with a phase locked loop or an injection locking oscillator, to produce the desired narrow band, tone or single sinusoid signal.
In the embodiment shown, there is a phase controllable signal generator 4 that produces a second ac signal V2 that may have the same known fundamental frequency ω, and whose phase is also known, e.g. relative to that of the ac signal source 3. This may be achieved for example by delaying Vin and controlling the phase of V2 at the output, according to a control input that receives set_phase. The control variable set_phase can be swept, under control of a peak detector 7 as described below. A phase locked loop or an injection locking oscillator may be used here to achieve a known phase relationship between the second ac signal V2 and the ac signal source 3.
A product mixer 5 has a first input coupled to receive the first ac signal V1 and a second input coupled to receive the second ac signal V2. The mixer 5 may be a conventional analog mixer. The output of the mixer 5 is then fed through a low pass filter (LPF) 6 which may serve to extract what is essentially the dc component of the mixer output signal. The LPF 6 may also be an analog filter. Note that in another embodiment, the signal generator 4 is not needed such that an input of the mixer 5 may be directly connected to the Vin side of the resistor 2.
In the embodiment shown, a peak detector 7 is provided that has an input coupled to an output of the low pass filter 6, and an output that provides set_phase, to control the phase shift introduced by the phase controllable signal generator 4 into the output signal V2. The peak detector 7 may be a circuit that can indicate when it has detected a peak, e.g. a maximum positive value or a maximum negative value, at the output of the LPF 6, while sweeping set_phase, and can record the value of set_phase that produced the peak value at the LPF output. This value of set_phase is referred to here as φmax. An aim here is to estimate φunknown, which is a phase difference between Vin and V1 that may have been caused by CDUT, as φmax. The underlying theory to validate this process is given below.
As seen above, the derivation refers to the particular case where CDUT=NCgd (described below in connection with
In the embodiment of
In another embodiment, neither the peak detector 7 nor the means for computing a capacitance value (estimate of CDUT), which is a programmed controller or a lookup table, actually records φmax. Instead, the formula given above for Vlpf is used, when the maximum value of the LPF 6 output has been found, to compute CDUT without using φmax. In that case however, the values A and B, which are amplitudes of the signals V1 and V2, respectively, need to be known or measured, in order to use the formula for Vlpf. This however may introduce measurement errors that would be absent from the φmax approach.
Turning now to
In this case, each TFT 23 of the respective pixel has its control electrode directly connected to a respective gate line that is driven by a voltage source VG, and these voltage sources can be found within gate line driver circuitry 15. The data line signals are provided by voltage sources Vdata that are found within data line driver circuitry 27. The data line driver circuitry 27, also called the source driver circuitry, receives control or timing signals and digital pixel signals from decode and timing logic 28. The latter translates incoming digital video pixel values (for example, red, green and blue digital pixel values) into analog data signals with appropriate timing, that are driven onto the data lines. The data line driver 27 performs the needed voltage level shifting, for example, to produce a data line voltage having not just the needed fan out or current capability, but also the desired amplitude or signal swing with the appropriate gray level voltage.
The capacitor 24 may include a liquid crystal capacitor that is formed between a pixel plate electrode and a common plate or electrode, where the latter is, in this example, directly connected to a number of other pixels in the same column, by virtue of a common voltage line that runs vertically as shown (similar to the data lines). A further capacitor (not shown), referred to as a storage capacitor, may be added to the pixel electrode, to increase the analog storage at that node. Other circuit arrangements for a storage circuit at the pixel electrode are possible.
In
Returning to
A bias circuit that produces a gate bias voltage VGL may also be provided, to bias each of the dummy TFTs into its cutoff state, during the measurement process. In the case of an N-channel enhancement TFT, VGL may be a negative dc voltage as depicted in
A controller 14 may also be provided, to modify an adjustable gate line driver 15, in accordance with the estimated measure of Cgd. The gate line driver 15 is an example of a driver circuit in the display system that is actually used to drive a real TFT of the system, and whose drive strength is adjustable so as to achieve consistent turn-off performance for the real TFT. As an alternative to a gate line driver 15, a data line driver 27 (see
Still referring to
The measurement circuit in
Still referring to
The controller 14 may be used to conduct the correction process, as follows: configure the switch circuit S1 into the first state and determine a first capacitance value using an output of the peak detector 7; configure S1 into the second state and determine a second capacitance value, again using the output of the peak detector 7; and use the determined first and second values to compute a corrected estimate of the capacitance of the DUT, e.g. take the difference between the first and second capacitance values. The controller 14 may be implemented using, for example, a state machine, or it may be a programmed processor with a program counter.
While certain embodiments have been described and shown in the accompanying drawings, it is to be understood that such embodiments are merely illustrative of and not restrictive on the broad invention, and that the invention is not limited to the specific constructions and arrangements shown and described, since various other modifications may occur to those of ordinary skill in the art. For example, while
This application claims the benefit of the earlier filing date of provisional application No. 61/668,892, filed Jul. 6, 2012, entitled “Capacitance Measurement Circuit”.
Number | Date | Country | |
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61668892 | Jul 2012 | US |