1. Field of the Invention
The present invention relates to a chemical mechanical polishing apparatus.
Priority is claimed on Japanese Patent Application No. 2009-024877, filed Feb. 5, 2009, the content of which is incorporated herein by reference.
2. Description of the Related Art
As well known, a CMP (Chemical Mechanical Polishing) machine is used for polishing a workpiece, such as a surface of a semiconductor wafer that is required to be flat. For example, Japanese Patent Laid-Open Publication No. 2006-080138 discloses a conventional CMP apparatus.
As shown in
The waste container 2 has an outlet 9 on a bottom surface 2a thereof. A side wall 2b of the waste container 2 is perpendicular to a bottom wall 2a of the waste container 2. The outlet 9 is provided for removing slurry which is dripped on the polishing pad 4 and then is dropped on the waste container 2.
The platen 3 has a predetermined thickness and is circular in plane view (i.e., when viewed in a direction perpendicular to upper and bottom surfaces of the platen 3). The platen 3 is rotatable around a circumference thereof using an apparatus (not shown). The polishing pad 4 is attached onto the platen 3.
The polishing pad 4 polishes the workpiece 5 by grinding against the workpiece 5. The polishing pad 4 may be made of any material, such as a foamable resin, a non-foamable resin, or a nonwoven fabric, as long as the workpiece 5 can be polished.
The carrier 6 schematically includes a polishing head 11 and a retainer 12. The polishing head 11 is rotatable around a circumference thereof and is circular in plane view. The polishing head 11 can press the workpiece 5 held by the retainer 12 against the polishing pad 4.
The retainer 12 is disposed between the polishing head 11 and the polishing pad 4 to hold the workpiece 5. Specifically, the retainer 12 is a ring-shaped board having a predetermined thickness and has space 13 in the center thereof. A compression chamber 15 defined by a membrane 14 is provided in the space 13. The retainer 12 holds the workpiece 5 under the compression chamber 15 in the space 13.
When the compression chamber 15 is compressed, the membrane 14 downwardly expands. The membrane 14 is made of, for example, neoprene rubber. A compression unit 16 connects to a duct different from one connected to the compression chamber 15, and is used for adjusting expansion of the membrane 14.
The slurry supplier 7 drips, in the center region of the polishing pad 4, slurry (not shown) that is an abrasive including grains for polishing the workpiece 5 on the polishing pad 4. A slurry can be selected according to the workpiece 5. For example, a slurry including SiO2, Al2O3, CeO2, and the like as grains can be used.
The dresser 8 is provided for maintaining the planarity and polishing efficiency of the polishing pad 4. Therefore, the dresser 8 is not limited to a specific configuration as long as the dresser 8 can planarize the polishing pad 4 from the periphery to the center thereof.
Hereinafter, a method of polishing the workpiece 5 using the CMP apparatus 1 is explained.
Firstly, the workpiece 5 to be polished is held by the retainer 12 with a target surface of the workpiece 5 downwardly facing. Then, the polishing head 11 is moved above the polishing pad 4 while the workpiece 5 is held.
Then, the polishing pad 4 and the polishing head 11 are rotated, and the compression chamber 15 is compressed by injecting air thereinto, so that the membrane 14 expands and therefore the workpiece 5 is pressed against the polishing pad 4.
Then, the slurry supplier 7 supplies a slurry onto the polishing pad 4. Thus, the polishing pad 4 is grinded against the workpiece 5, thereby polishing the workpiece 5.
When the workpiece 5 is polished by the conventional CMP apparatus 1, the certain number of workpieces 5 are scratched.
As understood from
In other words, the slurry dripped in the center region of the polishing pad 4 spreads over the surface of the polishing pad 4 and then escapes from the periphery of the polishing pad 4. Then, the slurry hits the side wall 2b of the waste container 2 due to centrifugal force generated by the rotating polishing pad 4, and is removed from the outlet 9.
When the slurry hits the side wall 2b of the waste container 2, a part of the slurry is dispersed in the air and attached onto a wall of a processing container of the CMP apparatus 1 (not shown) and surfaces of the polishing head 11, and then is dried and solidified in some cases.
Then, the dried-and-solidified slurry naturally drops, but a part of the slurry drops on the polishing pad 4. For this reason, foreign matters are present on the polishing pad 4, thereby causing the workpiece 5 to be scratched.
In one embodiment, a chemical mechanical polishing apparatus includes a container having a bottom wall and a side wall, the side wall having an inwardly-extending upper portion.
In another embodiment, a chemical mechanical polishing apparatus includes a container, a platen, and a brush. The container has a bottom wall and a side wall. The platen is supported over the bottom wall. The platen is positioned lower than an upper portion of the side wall. The brush brushes the side wall. The brush is fixed to a side surface of the platen.
In still another embodiment, a chemical mechanical polishing apparatus includes a container, a platen, and a brush. The container has a bottom wall and a side wall. The platen is supported over the bottom wall. The platen is positioned lower than an upper portion of the side wall. The brush brushes a side surface of the platen. The brush is fixed to the bottom wall.
Accordingly, even if a slurry hits the side wall of the container, the flow velocity of the slurry decreases since the side wall has the inwardly-extending upper portion, thereby preventing the slurry from being dispersed in the air and therefore enabling the slurry to be removed from the outlet.
Consequently, the dried slurry does not drop on the polishing pad, thereby preventing the polishing pad and the workpiece from being scratched.
The above features and advantages of the present invention will be more apparent from the following description of certain preferred embodiments taken in conjunction with the accompanying drawings, in which:
The present invention will now be described herein with reference to illustrative embodiments. The accompanying drawings explain a semiconductor device. The size, the thickness, and the like of each illustrated portion might be different from those of each portion of an actual CMP apparatus.
Those skilled in the art will recognize that many alternative embodiments can be accomplished using the teachings of the present invention and that the present invention is not limited to the embodiments illustrated herein for explanatory purposes.
The CMP apparatus 1A includes: a waste container 2; a circular platen 3 that is rotatable around a circumference thereof and has a predetermined thickness; a polishing pad 4 attached to the platen 3; a carrier 6 that presses a workpiece 5 against the polishing pad 4; a slurry supplier 7 that supplies a slurry onto the polishing pad 4; a dresser 8 that planarizes the polishing pad 4; a container cleaning brush 31 on a side surface of the platen 3; and a platen cleaning brush 32 on a bottom wall 2a of the waste container 2.
Explanations of the like elements between the related art and the first embodiment are omitted here.
As shown in
The side wall 2c is configured so that the escaping slurry does not hit the lower curved portion 22. This is because if the escaping slurry is allowed to hit the lower curved portion 22, a part of the slurry bounces back onto the upper curved portion 21, drops, hits slurry newly escaping from the polishing pad 4, and then a part of the hit slurry might be dispersed in the air.
The container cleaning brush 31 is provided on a side surface 3a of the platen 3. The container cleaning brush 31 can be in contact with the side wall 2c of the waste container 2.
Specifically, as shown in
In other words, the spring 44 can press the brush 41 in the direction indicated by an arrow A shown in
The platen cleaning brush 32 provided on the waste container 2 can be in contact with the side surface of the platen 3.
Specifically, as shown in
In other words, the spring 48 can press the brush 45 in the direction indicated by an arrow B shown in
As shown in
Hereinafter, a method of polishing the workpiece 5 using the CMP apparatus 1 is explained with reference to
Firstly, the workpiece 5 to be polished is held by the retainer 12 with a target surface of the workpiece 5 downwardly facing. Then, the polishing head 11 is moved above the polishing pad 4 while the workpiece 5 is held.
Then, the polishing pad 4 and the polishing head 11 are rotated, and the compression chamber 15 is compressed by injecting air therein, so that the membrane 14 expands and therefore the workpiece 5 is pressed against the polishing pad 4.
Then, the slurry supplier 7 supplies slurry in the center region of the polishing pad 4. Thus, the polishing pad 4 is grinded against the workpiece 5, thereby polishing the workpiece 5.
In this case, the slurry escaping from the periphery of the polishing pad 4 due to centrifugal force generated by the rotating polishing pad 4 hits the upper curved portion 21 of the side wall 2c of the waste container 2.
Consequently, the velocity of the hit slurry decreases since the upper curved portion 21 is outwardly curved (i.e., convex outward). Then, the slurry passes along the side wall 2c and then is removed from the outlet 9 of the waste container 2.
If the slurry upwardly bounces back, the slurry is guided along the upper curved portion 21. For this reason, the velocity of the slurry decreases until reaching the top of the upper curved portion 21, thereby preventing the slurry from being dispersed in the air.
Accordingly, the slurry is prevented from being dispersed in the air, and therefore the workpiece 5 is prevented from being scratched which is caused by the dried-and-solidified slurry dropped on the polishing pad 4.
Additionally, the container cleaning brush 31 rotates together with the platen 3, and cleans the inner side wall 2c of the waste container 2, thereby removing the slurry attached on the inner side wall 2c before the slurry is dried and solidified.
Similarly, the platen cleaning brush 32 is in contact with the side surface 3a of the rotating platen 3, and cleans the side surface 3a of the platen 3, thereby removing the slurry attached on the side surface 3a before the slurry is dried and solidified.
Thus, the slurry is further prevented from being dispersed in the air, thereby preventing the workpiece 5 from being scratched which is caused by the dried and solidified slurry dropped on the polishing pad 4.
As understood from
It is apparent that the present invention is not limited to the above embodiments, but may be modified and changed without departing from the scope and spirit of the invention.
For example, air in the waste container 2 is exhausted from the bottom of the waste container 2, thereby removing the dried-and-solidified slurry from the waste container 2 without the slurry being dispersed in the air.
Additionally, the shape of the side wall 2c of the waste container 2 is not limited to the outwardly convex shape shown in
The present invention is widely applicable to manufacturing industries requiring polishing workpieces, such as semiconductor wafers, by using a CMP apparatus.
Number | Date | Country | Kind |
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2009-024877 | Feb 2009 | JP | national |
Number | Name | Date | Kind |
---|---|---|---|
1366306 | Wick | Jan 1921 | A |
1689277 | Burns | Oct 1928 | A |
3983888 | Edwards | Oct 1976 | A |
4516357 | Gach | May 1985 | A |
5161669 | Gibson, Jr. | Nov 1992 | A |
5245796 | Miller et al. | Sep 1993 | A |
5268890 | Colescott | Dec 1993 | A |
5384986 | Hirose et al. | Jan 1995 | A |
5729856 | Jang et al. | Mar 1998 | A |
6139406 | Kennedy et al. | Oct 2000 | A |
6152813 | Suzuki | Nov 2000 | A |
6227956 | Halley | May 2001 | B1 |
6291350 | Hashimoto et al. | Sep 2001 | B1 |
6325698 | Wada et al. | Dec 2001 | B1 |
6361413 | Skrovan | Mar 2002 | B1 |
6361647 | Halley | Mar 2002 | B1 |
6364749 | Walker | Apr 2002 | B1 |
6375791 | Chiesl et al. | Apr 2002 | B1 |
6475293 | Moinpour et al. | Nov 2002 | B1 |
6629874 | Halley | Oct 2003 | B1 |
6776693 | Duboust et al. | Aug 2004 | B2 |
7910157 | Terada et al. | Mar 2011 | B2 |
20060030157 | Ivanov | Feb 2006 | A1 |
20080020682 | Jia et al. | Jan 2008 | A1 |
20100273401 | Shiratani et al. | Oct 2010 | A1 |
Number | Date | Country |
---|---|---|
2006-080138 | Mar 2006 | JP |
Number | Date | Country | |
---|---|---|---|
20100197207 A1 | Aug 2010 | US |