Claims
- 1. A method for polishing a substrate including at least one metal layer comprising the steps of:(a) admixing, from about 1.0 to 15.0 weight percent of an abrasive, from about 0.3 to about 15.0 weight percent urea hydrogen peroxide, from about 1.0 to 5.0 weight percent of at least one complexing agent, from about 0.01 to about 1.0 weight percent of at least one film forming agent and deionized water to give a chemical mechanical polishing slurry; (b) applying the chemical mechanical polishing slurry to the substrate; and (c) removing at least a portion of the metal layer from the substrate by bringing a pad into contact with the substrate and moving the pad in relation to the substrate.
- 2. The method of claim 1 wherein the substrate includes a copper alloy containing layer.
- 3. The method of claim 1 wherein the substrate further includes a titanium and titanium nitride layer wherein at least a portion of the titanium and titanium nitride layer is removed in step (c).
- 4. The method of claim 1 wherein the chemical mechanical polishing slurry is applied to the pad before the pad is placed into contact with the substrate.
- 5. The method of claim 1 wherein complexing agent is ammonium oxalate.
- 6. The method of claim 1 wherein the film forming agent is benzotriazole.
- 7. The method of claim 1 wherein the abrasive is a metal oxide.
- 8. The method of claim 7 wherein the metal oxide is selected from the group consisting of alumina, ceria, germania, silica, titania, zirconia, and mixtures thereof.
- 9. The method of claim 1 wherein the abrasive is an aqueous dispersion of a metal oxide.
- 10. The method of claim 9 wherein the metal oxide abrasive is selected from the group consisting of precipitated alumina, fumed alumina, precipitated silica, filmed silica, and mixtures thereof.
- 11. A method for polishing a substrate including a copper alloy layer, a titanium layer and a titanium nitride layer comprising:(a) admixing from about 1.0 to about 15.0 weight percent of alumina, from about 2.0 to about 24.0 weight percent urea, from about 0.5 to about 3.0 weight percent ammonium oxalate, from about 0.01 to about 0.2 weight percent benzotriazole, and deionized water to give a chemical mechanical polishing slurry precursor; (b) admixing hydrogen peroxide with the chemical mechanical polishing precursor of step (a) to give a chemical mechanical polishing slurry; (c) applying the chemical mechanical polishing slurry to the substrate; and (d) removing at least a portion of the copper alloy layer and at least a portion of the titanium layer and at least a portion of the titanium nitride layer by bringing a pad into contact with the substrate and moving the pad in relation to the substrate.
- 12. The method for polishing a substrate of claim 11 wherein hydrogen peroxide is admixed with the chemical mechanical polishing slurry precursor in ranging of from about 0.75 moles of urea to 1 mole of hydrogen peroxide to about 2 moles of urea to about 1.0 moles of hydrogen peroxide.
Parent Case Info
This application is a Div. of Ser. No. 08/891,649 filed Jul. 11, 1997 now U.S. Pat. No. 6,126,853 which is a continuation-in-part of co-pending U.S. patent application Ser. No. 08/763,705 filed Dec. 9, 1996, now U.S. Pat. No. 5,954,997.
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Continuation in Parts (1)
|
Number |
Date |
Country |
Parent |
08/763705 |
Dec 1996 |
US |
Child |
08/891649 |
|
US |