This document generally relates to chemical-mechanical polishing/planarization (CMP). More particularly, this document relates to CMP devices and techniques that include multi-zone delivery of slurry or other fluid.
Chemical-mechanical polishing (CMP) is a process of removing material from a semiconductor wafer or other work piece to create a smooth planar surface. Typically, a combination of chemical reaction and mechanical force is used to remove material from a front surface of the work piece to thereby create the planar surface. In a conventional CMP assembly, the work piece is secured in a carrier head such that the surface to be polished is exposed. The exposed surface of the work piece is then held against a polishing pad or other surface that is generally mounted to a rigid platen. Typically, a polishing slurry is introduced onto the polishing surface of the pad, and the work piece and/or polishing pad are moved in relation to each other in a linear, circular, orbital or other fashion to polish or planarize the surface of the work piece as desired.
Frequently, slurry is supplied to the polishing surface through one or more holes in the polishing pad. These holes typically receive fluid via a common delivery line from a fluid supply source. In many implementations, a manifold or similar structure equalizes fluid resistances for the various paths flowing to the different holes. While the manifold structures found in many implementations have been beneficial for many purposes, the complex design of such structures can create certain limitations and other issues. In particular, the number of holes that can be supported by any particular manifold can be relatively limited, thereby creating issues in distributing slurry and/or creating even flow across the surface of the polishing pad.
It is therefore desirable to create polishing structures and techniques that are able to improve the uniformity of slurry delivery across the surface of the pad. Furthermore, other desirable features and characteristics will become apparent from the subsequent detailed description and the appended claims, taken in conjunction with the accompanying drawings and the foregoing technical field and background.
In various embodiments, chemical-mechanical polishing or planarization (CMP) of a work piece is enhanced with multi-zone slurry delivery. A polishing pad is provided that contacts with the work piece, and a multi-zone platen is displaced proximate to the polishing pad to facilitate slurry delivery. The platen includes multiple fluid distribution layers that each include a fluid-distributing channel extending from a fluid source to a distribution point on layer. The distribution points on each of the fluid distribution layers correspond to different locations on the polishing surface to thereby create multiple fluid-delivery zones on the pad.
In other embodiments, a platen for use in chemical-mechanical polishing of a work piece is provided. The platen comprises a first fluid distribution layer comprising a first channel radially extending from a first fluid source to a first distribution point and a second fluid distribution layer proximate the first fluid distribution layer and comprising a second channel radially extending from a second fluid source to a second fluid distribution point, wherein the second fluid distribution layer further comprises a hole corresponding to the first distribution point in the first fluid distribution layer. An expansion layer is located proximate the second fluid distribution layer, wherein the expansion layer comprises a first channel hole corresponding to the hole in the second fluid distribution layer and a second channel hole corresponding to the second fluid distribution point.
In still other embodiments, a method of chemical-mechanical polishing of a work piece using a platen having a plurality of slurry delivery zones is provided. The method comprises initiating chemical-mechanical polishing of the work piece to thereby provide slurry to the work piece via each of the plurality of slurry delivery zones, and, for each of the plurality of slurry delivery zones, adjusting an amount of slurry provided via the slurry delivery zone during chemical-mechanical polishing of the work piece.
Various embodiments will hereinafter be described in conjunction with the following drawing figures, wherein like numerals denote like elements, and
The following detailed description is merely exemplary in nature and is not intended to limit the invention or the application and uses of the invention. Furthermore, there is no intention to be bound by any expressed or implied theory presented in the preceding technical field, background, brief summary or the following detailed description.
According to various exemplary embodiments, new structures and techniques for chemical mechanical polishing/planarization are provided that allow for a number of slurry-delivery “zones” to be created on the polishing pad. Slurry fluid can be separately provided and controlled for each zone to reduce variations in slurry flow across the pad, or to deliver different flow rates to different zones during polishing. In various embodiments, the multiple slurry delivery zones are implemented with a multi-layer platen assembly that separately distributes slurry from different supply lines to the various zones. Such structures may be able to provide better slurry coverage across the surface of the pad or work piece than prior structures. Moreover, by separately providing and controlling slurry delivery to the various zones of the platen or pad, improved uniformity in slurry delivery rates can be established, and/or the availability of slurry distributed across the pad can be tuned across the surface of the pad to better control the radial sheer realized at various points of the pad/work piece interface.
A number of terms are clarified at the outset. For example, the terms “polishing” and “planarization”, although occasionally having different connotations, are often used interchangeably by those skilled in the art. For ease of description such common usage will be followed and the term “CMP” may equivalently convey either “chemical mechanical polishing” or “chemical mechanical planarization.” The terms “polish” and “planarize” will also be used interchangeably herein. Further, the phrases “chemical mechanical polishing/planarization” and CMP are intended to broadly encompass equivalent techniques, such as electrochemical mechanical polishing (ECMP), that may have similar capabilities and/or requirements in terms of uniform removal of material from a work piece. The term “fluid” is intended to encompass any liquid, gas or other substance that is capable of flowing through a passageway. Examples of fluids include slurry, chemical solvents, vapors, mists, air or other atmospheric venting, mixing fluid, pressure or vacuum gases, or any other materials in any liquid, vaporous and/or other form. Moreover, the term “exemplary” is intended in the context of an example, which may or may not be intended as a model. That is, an “exemplary” embodiment is merely intended as one example of an embodiment that may have any number of alternate and/or additional embodiments or features that may differ from those described herein.
Turning now to the drawing figures,
A platen assembly 112 mechanically supports polishing pad 110, and in many embodiments supplies slurry to the polishing interface between pad 110 and work piece 108. Platen 112 may optionally contain a multi-layered fluid delivery system with slurry supply and/or exhaust holes or passageways provided to deliver and/or remove slurry to and/or from the top surface of polishing pad 110. During a conventional polishing operation, pad 110 is moved in a rotational and/or orbital motion about a platen axis 125 while the carrier head 20 simultaneously rotates the wafer 21 about the carrier head axis 123. In a typical CMP process, the carrier head axis 123 is offset from the platen axis 125 by a distance typically referred to as the upper-to-lower head offset. Moreover, in various embodiments, the entire platen assembly 112 may orbit about the carrier head axis 123 or another point as appropriate. This orbiting motion may be provided by an arm 114 or other structure coupling platen assembly 112 to a motor or the like.
During the polishing process, slurry is delivered through platen 112 to one or more polishing zones 115, 116, 117, 118 as described more fully below.
Slurry may be exhausted from the surface of polishing pad 108 in any manner. In various embodiments, the polishing surface of pad 110 provides a set of grooves or other topographical features to distribute slurry fluid across the surface of the pad 110 during planarization. These features, as well as the kinematics of the relative motion between work piece 108 and pad 110, can effectively direct the movement of slurry particles during polishing in any desired manner. Exhaust holes or other passageways may also be provided in pad 110 and/or platen 112 for recovery of spent slurry. One example of a fluid distribution system that provides relatively uniform distribution of fluid across the surface of pad 110, as well as fluid exhaust, is described in U.S. Pat. No. 6,918,824, although any other fluid distribution and/or exhaust techniques may be equivalently applied in other embodiments.
In operation of CMP apparatus 100, slurry can be independently controlled for delivery to each of the zones to thereby allow for substantially consistent slurry flow across the interface between pad 110 and work piece 108, or to adjust the flow of slurry in one or more zones 115-118 with respect to slurry flow in any other zone. For example, slurry flow may be controlled using a digital microprocessor, microcontroller or the like to independently adjust the rates of slurry flow to one or more zones 115-118 as desired. Slurry flow may be controlled in any manner. In various embodiments, a common slurry delivery line could pass through an independent valve, orifice or other type of fixed or variable restrictor for each zone, for example. In other embodiments, multiple slurry delivery lines could be provided for two or more zones, with each delivery line having its own flow controller. Various techniques and structures for implementing multi-zone slurry delivery are described more fully below.
In the exemplary embodiment shown in
Base or support layer 302 is any structure capable of supporting the fluid distribution layers 310, 320, 330 as appropriate. Layer 302 as illustrated in
Each fluid distribution layer 310, 320, 330 contains appropriate fluid distribution channels 312, 322, 332 to distribute slurry or other fluids from a fluid source (e.g. plug 352) to one or more fluid distribution points 317, 327, 337 (respectively). Channels 312, 322, 332 represent any sort of grooves, ducts or other passages in fluid distribution layers 310, 320, 330 that are capable of conducting slurry or other fluid. Although
Fluid distribution channels 310, 320, 330 may take any shape or dimension. In the embodiment shown in
Each fluid distribution layer 310, 320, 330 shown in
Expansion layer 340 similarly contains any number of holes or other channels to accommodate fluid flow from each of the lower fluid distribution layers 310, 320, 330. Layer 340 may also contain additional holes or other passages 343 to accommodate probe placement, fluid exhaust and/or other features as appropriate. Although not shown in
In operation, then, fluid provided to each layer 310, 320, 330 is ultimately distributed to a particular zone of polishing pad 110 as appropriate. Fluid provided to layer 310, for example, is distributed radially outward from source 314 toward distribution points 317 by channels 312. Fluid then passes from points 317 through holes 325 in layer 320, holes 335 in layer 330, and holes 345 in layer 340 to ultimately arrive at polishing pad 110. Fluid provided to layer 320 is similarly provided radially outward from source 324 toward distribution points 327 by channels 322; this fluid is then conducted toward pad 110 by holes 336 in layer 330 and holes 346 in layer 340. Channels 332 in layer 330 similarly conduct fluid provided to layer 330 at source 334 to distribution points 337 by channels 332, and holes 347 in layer 340 conduct the fluid toward pad 110. Fluid is exhausted from pad 110 through a channel formed by holes 303, 313, 323, 333 and 343, as appropriate.
Although the exemplary embodiment of
Fluid distribution may be further improved through the inclusion of additional distribution features in expansion layer 340. With reference now to
Turning now to
In the embodiment shown in
Sections 508, 510, 512 may be similarly formed in any manner, using any convenient materials. In various embodiments, sections 508, 510, 512 are molded or otherwise formed from aluminum, titanium or another metal, although other materials such as plastic, ceramic, carbon fiber and/or the like could be equivalently used. The multiple sections are designed so that the orifices 518, 520, 522 align with the corresponding distribution channels 312, 322, 332 as appropriate. Note that, while
In operation, then, slurry or other fluid can be provided across a polishing surface of pad 110 to a number of fluid-delivery zones 115-118 in any manner. As shown in the exemplary embodiment illustrated in
By adjusting the amount of fluid flow (or, equivalently, the rate of fluid flow) in supply lines 732, 734, 736, then, the amount of fluid distributed to each zone 116, 117, 118 can be independently adjusted. One technique for controlling fluid control involves the use of a digital controller 722, which is any microprocessor, microcontroller, programmable logic and/or other control device as appropriate. In various embodiments, controller 722 includes (or communicates with) a digital memory, input/output and the like to implement any suitable control scheme for polishing/planarizing a wafer or other work piece 108 (FIG. 1) in any desired manner. In particular, controller 722 may contain input/output pins or the like that are capable of providing control signals 716, 718, 720 to fluid controls 710, 712, 714, respectively. In various embodiments, control signals 716, 718, 720 are simply digital or analog signals that can be used to control the rate of fluid flow in supply lines 732, 734, 736, respectively. In one embodiment, fluid controllers 710, 712, 714 are digitally-controlled valves that open and close in response to a received digital signal (e.g., signals 716, 718, 720). By controlling the duty cycles of the applied signals, then (e.g., in a manner similar to pulse coded modulation (PCM)), the rate of fluid flow allowed by the valve can be controlled. A sixty-percent duty cycle on a signal 716, for example, could result in valve 710 remaining open for 60% of any particular period of time. The particular time could be any time period ranging from fractions of seconds to several seconds, although other embodiments may vary from these parameters. Increasing or decreasing the duty cycle of signal 716 would have the effect of increasing or decreasing the rate of fluid flow through supply line 732. Fluid flow rates through supply lines 734, 736 could be equivalently adjusted by adjusting the duty cycle (or other characteristics) of signals 718, 720, respectively.
In various embodiments, one or more eddy current probes 702 and/or endpoint detection probes 704 may also be present within platen assembly 112. In such embodiments, each probe 702, 704 typically provides a data reporting signal 706, 708 (respectively) to controller 722. Such information may be used in any manner; data 706 received from one or more eddy current probes 704, for example, may be used to adjust the amount of fluid provided to one or more zones 116-118. Such adjustments may be used, for example, to increase or decrease the shear friction in any portion of the pad, to reduce hydroplane effects, and/or for any other purposes. Optical or other endpoint detectors 704 may also be provided to generate data 708 that can assist controller 722 in determining when polishing/planarization is complete, or to identify non-uniformities across the surface of work piece 108. Probes 702 and 704 may be installed within platen 112 in any conventional manner; in various embodiments, the various layers 302, 310, 320, 330, 340 may include holes or other recesses to accommodate probes 702, 704 of any size. In some embodiments, a probe bushing may also be provided to mate with the platen assembly 112 as appropriate.
Controller 722 therefore controls the flow of fluid from supply 715 to pad 110 in any manner. In various embodiments, controller adjusts the amount of fluid provided to zones 116, 117, 118 as appropriate to produce desired results during polishing/planarization. Controller 722 may also provide one or more control signals 724 that can be used to adjust the pressure applied to pad 110, or to any portion of pad 110. In various embodiments, pressure applied to each zone 116-118 can be coordinated with the amount of fluid provided to the zone 116-118. Pressure may be applied from either side of work piece 108 (e.g., by carrier head 106 and/or by platen 112) in embodiments that provide such features. Controller 722 may also provide an output signal 726 to a system controller or output device, as appropriate.
With final reference now to
Initiation of chemical-mechanical polishing/planarization takes place in any manner (step 802). In various embodiments, slurry or other fluid is initially delivered to each of the various zones 115-118 (
The particular amounts or rates of fluid flow may be calculated or otherwise applied in any manner (step 808). In various embodiments, a nominal flow rate is set at the outset of polishing, with flow adjusted upwardly or downwardly as appropriate. The flow rate may be represented and established in any manner. In an exemplary embodiment, a desired flow rate is mathematically computed using conventional data processing techniques, and the resulting values are then converted to appropriate representations that can be applied as control signals 716, 718, 720 (
As noted above, the pressure applied to one or more zones 115-118 (or to the entire pad 110) may be adjusted in any manner (step 812). In various embodiments, pressure can be applied independently to each of the controllable zones 115-118, so each zone 115-118 may have an applied pressure that is controlled in conjunction with the supplied fluid. The pressure and fluid flow may be correlated in any manner; fluid flow may be increased as pressure is increased, for example, or otherwise adjusted as appropriate.
In summary, new systems, apparatus and methods for performing chemical-mechanical polishing/planarization have been provided. By providing a number of fluid-delivery zones that can each be independently controlled, improved surface uniformity can be obtained, and/or additional performance enhancements can be provided.
While at least one exemplary embodiment has been presented in the foregoing detailed description, it should be appreciated that a vast number of variations exist. It should also be appreciated that the exemplary embodiment or exemplary embodiments are only examples, and are not intended to limit the scope, applicability, or configuration of the invention in any way. Rather, the foregoing detailed description will provide those skilled in the art with a convenient road map for implementing the exemplary embodiment or exemplary embodiments. It should be understood that various changes can be made in the function and arrangement of elements without departing from the scope of the invention as set forth in the appended claims and the legal equivalents thereof.
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