Claims
- 1. The application of a substrate for carrying a silicon chip (integrated circuits) which comprises a hybrid glass cloth woven from yarn comprising fiberglass and a second material which possesses a coefficient of thermal expansion of less than about 5.0.times.10.sup.-6 in/in/.degree.C.
- 2. The substrate as set forth in claim 1 comprising a dimensionally stable laminate.
- 3. The substrate as set forth in claim 1 in which the warp yarn of said hybrid glass cloth is fiberglass and the fill yarn is boron nitride.
- 4. The substrate as set forth in claim 1 in which the warp yarn of said hybrid glass cloth is a mixture of fiberglass and boron nitride and said fill yarn is a boron nitride filament.
- 5. The substrate as set forth in claim 1 in which the warp yarn is fiberglass and the fill yarn is a nylon filament.
- 6. The substrate as set forth in claim 1 in which the warp yarn is a mixture of fiberglass and nylon and the fill yarn is a nylon filament.
- 7. The substrate as set forth in claim 1 in which warp and/or fill yarns are a hybrid of alternating yarns (end and end).
- 8. The substrate as set forth in claim 1 in which the thickness of said woven hybrid glass cloth is in a range of from about 0.0015" to about 0.20".
- 9. The substrate as set forth in claim 2 in which said dimensionally stable laminate comprises alternate layers of said woven hybrid glass cloth and a fiberglass.
- 10. The substrate as set forth in claim 9 in which the thickness of said dimensionally stable laminate is in a range of from about 0.003" to about 0.250".
CROSS-REFERENCE TO RELATED APPLICATION
This application is a continuation-in-part of my copending application Ser. No. 334,500 filed Dec. 28, 1981 and issued on Feb. 8, 1983 as U.S. Pat. No. 4,372,347, all teachings of which are incorporated by reference herein.
US Referenced Citations (2)
Number |
Name |
Date |
Kind |
4201247 |
Shannon |
May 1980 |
|
4304811 |
David et al. |
Dec 1981 |
|
Continuation in Parts (1)
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Number |
Date |
Country |
Parent |
334500 |
Dec 1981 |
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