CHLORIDE, BROMIDE AND IODIDE SCINTILLATORS WITH EUROPEAN DOPING

Abstract
A halide scintillator material is disclosed where the halide may comprise chloride, bromide or iodide. The material is single-crystalline and has a composition of the general formula ABX3 where A is an alkali, B is an alkali earth and X is a halide which general composition was investigated. In particular, crystals of the formula ACa1-yEuyI3 where A=K, Rb and Cs were formed as well as crystals of the formula CsA1-yEuyX3 (where A=Ca, Sr, Ba, or a combination thereof and X=Cl. Br or I or a combination thereof) with divalent Europium doping where 0≦z≦1, and more particularly Eu doping has been studied at one to ten mol %. The disclosed scintillator materials are suitable for making scintillation detectors used in applications such as medical imaging and homeland security.
Description
TECHNICAL FIELD

The present invention generally relates to new chloride, bromide and iodide scintillator crystals with divalent Europium doping, and, more particularly, to halide scintillators represented by one of the following formulae: ACa1-yEuyX3 (where A K, Rb or Cs, or a combination thereof; and 0≦y≦1) and CsAl1-yEuyX3 (where A=Ca, Sr, Ba, or a combination thereof, and 0≦y≦1) and X=Cl, Br or I or a combination thereof in either formulae.


BACKGROUND

A halide scintillator for radiation detection is described in U.S. Published Patent Application No. 2011/0272585 and a chloride scintillator for radiation detection is described in U.S. Published Application No. 2011/0272586 published Nov. 10, 2011, both published applications of Zhuravleva et al. of the University of Tennessee. The halide scintillator is single-crystalline crystalline and has a composition of the formula A3MBr6(1-x)Cl6x or AM2Br7(1-x)Cl7x wherein A consists of one of Li, Na, K, Rb, Cs or any combination thereof, and M consists of Ce, Sc, Y, La, Lu, Gd, Pr, Tb, Yb, Nd or any combination thereof and 0≦x≦1. The chloride scintillator is also single crystalline and has a composition of the formula AM2Cl7 and A and M consist of the elements indicated above. A modified Bridgman technique was used to form the crystals. A Bridgman method is described in Robertson J. M., 1986, Crystal Growth of Ceramics: Bridgman-Stockbarger method in Bever: 1986 “Encyclopedia of Materials Science and Engineering,” Pergamon, Oxford pp. 963-964” among other known tutorials incorporated by reference herein as to any material deemed essential to an understanding of the Bridgman method.


An iodide scintillator for radiation detection is described in EP 2387040 published Nov. 16, 2011 and claims priority to U.S. patent application Ser. No. 13/098,654 filed May 2, 2011 and to U.S. provisional patent application Ser. No. 61/332,945 filed May 10, 2010, also of Zhuravleva et al. of the University of Tennessee. The disclosed iodide scintillators have a composition of the formula AM1-xEuI3, A3M1-xEuxI5 and AM2(1-x)Eu2xI5, wherein A consists essentially of an alkali element (such as Li, Na, K, Rb, Cs) or any combination thereof, M consists essentially of Sr, Ca, Ba or any combination thereof, and 0≦x≦1. These iodide scintillator crystals were made by first synthesizing a compound of the above composition and then forming a single crystal from the synthesized compound, for example, by the Vertical Gradient Freeze method. In particular, high-purity starting iodides (such as CsI, SrI2, EuI2 and rare-earth iodide(s)) are handled in a glove box with, for example, pure nitrogen atmosphere and then mixed and melted to synthesize a compound of the, desired composition of the scintillator material. A single crystal of the scintillator material is then grown from the synthesized compound by the Bridgman method or Vertical Gradient Freeze (VGF) method, in which a sealed ampoule containing the synthesized compound is transported from a hot zone to a cold zone through a controlled temperature gradient at high speed to form the single-crystalline scintillator from molten synthesized compound. The ampoule may be sealed with a hydrogen torch after creating a vacuum on the order of 1×10−6 millibars. The scintillator crystal may be cut and polished using sand papers and mineral oil and then optically coupled to a photon detector such as a photomultiplier tube (PMT), arranged to receive the photons generated by the scintillator and adapted to generate a signal indicative of the photon generation. Typically, plates about 1-3 mm in thickness may be cut from the bottles and small samples selected for the optical characterization. This scintillator crystal work has been continuing at the University of Tennessee, Scintillation Materials Research Center, Knoxville, Tenn.


Also, pursuant to U.S. Published Patent Application No. 2011/0165422, published Jul. 7, 2011. complimentary development of a lanthanide doped strontium barium mixed halide scintillator crystal, for example. Sr0.2Ba0.75Eu0.05BrI has been developed with 5% Eu doping, also using a Bridgman growth technique, at the University of California.


Pursuant to U.S. Published Patent Application No. 2011/0024635 published Feb. 3, 2011, of Shah et al., a lithium containing halide scintillator composition is disclosed. This CsLiLn composition appears to have been produced at Radiation Monitoring Devices, Inc. of Watertown, Mass.


The need for radiation detecting materials has been at the forefront of materials research in recent years due to applications in national security, medical imaging, X-ray detection, gamma-ray detection, oil well logging (geological applications) and high energy physics among other applications. Typically, a crystal of the types described above desirably exhibit high light yields, fast luminescence decay (for example, below 1000 ns), good stopping power, high density, good energy resolution, ease of growth, proportionality and stability under ambient conditions. LaxBr3:Ce1-x (E. V. D. van Loef et al., Applied Physics Letters, 2007, 79, 1573) and SrxI2:Eu1-x (N. Cherepy et al, Applied Physics Letters, 2007, 92, 083508) are present day benchmark materials that satisfy some of the desired criteria, but their application is limited due to the extreme hygroscopic nature. Other known benchmarks that are commercially available include bismuth germanate (BGO) and NaI:Tl available from a number of sources.


There remains a need in the an for further research and development of scintillator crystal materials for the applications described above.


SUMMARY OF THE DISCLOSURE

This summary is provided to introduce a selection of concepts. These concepts are further described below in the Detailed Description. This summary is not intended to identify key features or essential features of the claimed subject matter, nor is this summary intended as an aid in determining the scope of the claimed subject matter.


The present invention meets the above-identified needs by providing inorganic scintillator crystals such as halide scintillators with divalent Europium doping represented by one of the following formulae: ACa1-yEuyX3 (where A=K, Rb or Cs, or a combination thereof and X=Cl, Br or I or a combination thereof and 0≦y≦1) and CsAl1-yEuyX3 (where A=Ca, Sr, Ba, or a combination thereof and X=Cl, Br or I or a combination thereof and 0≦y≦1). Generally, an embodiment comprises ABX3 where A is an alkali, B is an alkali earth and X is a halide.


In one embodiment, an inorganic single crystal scintillator comprises the formula: ACa1-yEuyX3 (where A=K, Rh or Cs, or a combination thereof and X=Cl, Br or I or a combination thereof and 0≦y'1). In particular, crystals were formed for KCaI3:Eu from studying a known KI—CaI2 phase diagram system whereby a Potassium Iodide (KI) and Calcium Iodide (CaI2) graph plotted from a mole concentration of 0% KI to 100% CaI2 versus temperature between, for example, 200 and 800° C.; (phase diagrams are available from the National Institute of Standards and Technology (NIST) phase diagrams database). Also, crystals were formed for RbCaI3, for CsCaI3 and for CsCaCl3 following known phase diagrams and by utilizing as pure and anhydrous raw materials as possible. Anhydrous RbI not being generally available, techniques were employed to purify the RbI raw material using known techniques. These crystals were grown using one of a vertical gradient freeze or a modified Bridgman method. A Czochralski technique or combination Bridgman/Czochralski method may be used as an alternative process for growing scintillator crystals.


In another embodiment, an inorganic single crystal scintillator comprises the formula: ACa1-yEuyX3 (where A=Ca, Sr, Ba or a combination thereof, and 0≦y≦1) and X=Cl, Br or I or a combination thereof. Similar growth techniques were employed and their characteristics studied as scintillators.


Further features and advantages of the present invention, as well as the structure and operation of various aspects of the present invention, are described in detail below with reference to the accompanying drawings.





BRIEF DESCRIPTION OF THE DRAWINGS

The features and advantages of the present invention will become more apparent from the detailed description set forth below when taken in conjunction with the drawings in which like reference numbers indicate identical or functionally similar elements.



FIGS. 1, 2 and 9 comprise PRIOR ART phase diagrams obtained via the National Institute of Standards and Technology (NIST) phase diagram database and are reproduced here for purposes of enablement of one of ordinary skill in the art.



FIG. 1 is a PRIOR ART phase diagram of a KI—CaI2 system whereby KI is shown at left and CaI2 is shown at right between 0 and 100% mol concentration while temperature is depicted along the left vertical axis between 200° C. and 800° C. The diagram shows formation of a congruently melting compound KCaI3 and points to the fact that crystals of KCaI3 can be grown from the melt.



FIG. 2 is a PRIOR ART phase diagram of KCaI3 as well as similar systems for RbI to CaI2 and CsI to Cab also between 200° C. and 800° C. All three compounds, KCaI3, CsCaI3 and RbCaI3 are congruently melting compounds and, therefore, their crystals can be grown from the melt.



FIG. 3 shows typical Bridgman apparatus in diagrammatic form comprising from top to bottom, a hot zone, an adiabatic zone and a cold zone whereby the center of the furnace shows crystal growth direction from an ampoule in the hot zone.



FIG. 4 provides a graph for photoluminescence emission and excitation spectra for CsCaI3:Eu and KCaI3:Eu wherein dashed lines represent wide excitation bands and solid lines represent emission bands for each crystal.



FIG. 5 provides graphs for radio-luminescence for each crystal: CsCaI3:Eu, KCaI3:Eu, and RbCaI3Eu, demonstrating Eu2+ 5d-4f luminescence under X-ray excitation.



FIG. 6 provides 137Cs energy spectra with 662 keV gamma-ray photopeaks for CsCaI3:Eu 3% (the upper curve) and KCaI3:Eu 3% (the lower curve) normalized to a benchmark bismuth gerrnanate (BOO) standard sample with its photopeak at channel 100.



FIG. 7A to 7C provides graphs of scintillation decay for each crystal KCaI3:Eu 1%, RbCaI3:Eu 1% and CsCaI3:Eu 1% in counts over time measured in nanoseconds. Scintillation time profiles were recorded using a 137Cs gamma-ray source. Scintillation decay constants obtained from fitting the curves with exponential functions are shown in legends.



FIG. 8A to 8C provides black and white line drawings made from photographs of the KCaI3:Eu 3%, CsCaI3:Eu 3% and RbCaCI3:Eu 3% crystals respectively compared with measurement rulers (except RbCaCI3:Eu 3%).



FIG. 9A is a PRIOR ART phase diagram of the CsCl—CaCl2 system whereby CsCl is shown at left and CaCl2 is shown at right between 0 and 100% mol concentration while temperature is depicted along the left vertical axis between 200° C. and 800° C.; FIG. 9B is a PRIOR ART phase diagram of the CsCl—SrCl2 system whereby CsCl is shown at left and SrCl2 is shown at right between 0 and 100% mol concentration while temperature is depicted along the left vertical axis between 200° C and 800° C.: and FIG. 9C is a PRIOR ART phase diagram of the SrBr2—CsBr system whereby SrBr2 is shown at left and CsBr is shown at right between 0 and 100% mol concentration while temperature is depicted, along the left vertical axis between 200° C. and 800° C. All three compounds, CsCaI3, CsSrI3 and CsSrBr3 are congruently melting compounds and, therefore, their crystals can be grown from the melt.



FIG. 10 is a graph over time of moisture intake of Cs2LiYCl6:Ce and NaI as benchmarks and the following crystals: CsSrCI3:Eu 10%; CsSrBr3:Eu 10% and CsCaCl3:Eu 10% where the latter two crystals exhibit little or no moisture intake. Measurements were made at the same temperature and humidity conditions.



FIG. 11 is a photoluminescence emission and excitation spectra graph for each of the CsCaCl3:Eu 10%, CsSrCl3:Eu 10% and CsSrBr3:Eu 10% crystals where dashed lines represent wide excitation bands and solid lines represent emission bands.



FIG. 12 provides graphs for radiolummescence for each crystal: CsCaCl3:Eu 10%, CsSrCl3:Eu 10% and CsSrBr3:Eu 10% demonstrating Eu2+ 5d-4f luminescence under X-ray excitation.



FIG. 13A to 13C represe t graphs of scintillatitan decay over time for each crystal whereby FIG. 13A represents CsCaCl3:Eu 10%; FIG. 13B represents CsSrCl3:Eu 10% and FIG. 13C represents CsSrBr3:Eu 10%. Scintillation time profiles were recorded using a 137Cs gamma-ray source. Scintillation decay constants obtained from fitting the curves with exponential functions are shown in legends.



FIG. 14A to 14C represent graphs of 137Cs energy spectra with 662 keV gamma-ray photopeaks for each crystal whereby FIG. 14A represents CsCaCl3:Eu 10%; FIG. 14B represents CsSrCl3:Eu 10% and FIG. 14C represents CsSrBr3:Eu 10% normalized to a benchmark bismuth germanate (BOO) standard sample with its photopeak at channel 100.



FIG. 15A to 15B are graphs demonstrating relative light output proportionality versus energy whereby FIG. 15A represents CsSrBr3:Eu 10% and FIG. 15B is a similar graph for CsCaCl3:Eu 10%.



FIG. 16A to 16C are black and white line drawings made from photographs of each respective crystal: CsSrCl3:Eu 10%; CsSrBr3:Eu 10% and CsCaCl3:Eu 10%.



FIG. 17 is a graph of barium concentration in a CsBaxSr1-xI3:yEu system showing a decrease in moisture absorption rate (MAR) with increasing barium concentration from x=0.03 to x=0.24 and y=1%.



FIG. 18 is a collection of graphs showing radioluminescence spectra of CsSn1-xBaxI3:1% Eu at room temperature, the emission peaks appearing at between 445 nm and 450 nm.





DETAILED DESCRIPTION

The present invention is generally directed to new inorganic scintillator crystals from the concept ABX3 where A is an alkali, B is an alkali earth and X is a halide comprising one of chlorine, bromine and iodine. Also, levels of divalent Europium doping were investigated between 1% and 10% with exemplary scintillator crystals grown and their characteristics recorded. It is also directed to combination inorganic crystal scintillators where Cesium, Strontium, Calcium and Barium are used in combination, for example, to form scintillator crystals of the formula CsSrX3:Eu 1 to 10% or CsCaX3:Eu 1 to 10% or CsSrBaX3:Eu 1 to 10% with divalent Europium doping for substitution with one of the other divalent elements (Sr, Ca and SrBa combination). First, the formation of ACaI3 crystals with divalent Europium doping will be discussed as one example followed by a discussion of the combination crystals.


EXAMPLE 1
ACal1-yEuyI3 where A=K, Rb and Cs

Referring to FIG. 1, there is shown a PRIOR ART exemplary system potassium iodide and calcium iodide showing a mol concentration versus temperature plot. Halide salts generally rapidly absorb moisture and preferably are maintained dry so as not to pre-assume a crystalline form with water. As will be explained herein, the purification process and handling of these halide salts is best performed under protective atmosphere to obtain pure, anhydrous salts, for example, using a zone refining technique in furnaces, melt-filtering or other known techniques where the material may be sealed in a quartz ampoule either under vacuum or nitrogen or argon gas.



FIG. 2 shows similar plots for rubidium and cesium, respectively, and calcium chloride. RbI is presently not available in pure, anhydrous form and must he purified and rendered as anhydrous as possible using known techniques. First referring to FIG. 1, KCaI3 is a congruently melting compound with a melting point at 524° C.


The PRIOR ART table 1 below provides the details for each crystal formed for each of potassium, rubidium and cesium and Zr calculated using a known formula:













TABLE 1







KCaI3
RbCaI3
CsCaI3



















Tm, ° C.
524
582
686


Crystal Structure
Ortho-rhombic
Ortho-rhombic
Ortho-rhombic


Phase transition, ° C.
No
470
No


Density, g/cm3
3.81
NA
4.06


Zeff
50.6
50.0
52.6









From the table 1 summary above, all three crystals exhibit an orthorhombic crystal structure. Accurate black and white line drawings of the respective crystals with Eu 3% are depicted in FIG. 8. The melting temperature varies from 524° C. for potassium to 686° C. for Cesium. There is no phase transition exhibited for either potassium or cesium. A phase transition at 469° C. or approximately 470° C. was noted for rubidium. The Zeff did not vary much, from 50.0 to 52.6. The density in grams per cubic centimeter was between 3.8 and 4.1 approximately.


The vertical gradient freeze and a modified Bridgman technique depicted in FIG. 3 may be used to form the crystals whose characteristics are described in table 1. The method may also be used with or as a substitute for a vertical gradient freeze (VGF) method. A Czochralski technique or combined Czochralski/Bridgman technique may be used in the alternative to grow scintillator crystals. As explained above, halide salts are moisture sensitive. One step in the process is to synthesize the compound using high purity anhydrous starting halides such as CsI, KI, RbI, EuI2 and CaI2. In the case of RbI, the salt was dried and purified in a glove box using known techniques. It is recommended that the dry salt raw materials be handled in a glove box prior to movement to the ampoule of FIG. 3. A typical ampoule is a vacuum-sealed quartz ampoule at 10 −6 vacuum pressure. A Mellen Electro-Dynamic Gradient (EDG) furnace with a translation motor may be utilized to generate heat. Synthesized material may be further purified via filtering through a frit followed by several runs of zone refining. Growth parameters are suggested as follows: a temperature gradient may be between 25-75° C. per inch of crystal growth; a translation rate may be one millimeter per hour (range of 0.5 to 2 mm per hour); a typical cool down rate may be 5° C per hour. Crystal growth results are shown in FIG. 8 against rulers showing length of growth.


In addition to growth in single crystalline form, the scintillator compounds discussed herein may be prepared as polycrystalline powders by mixing fine grain powder components in stoichiometric ratios and sintering at a temperature somewhat below the melting point. Furthermore, these compositions may be synthesized in polycrystalline ceramic form by hot isostatic pressing of lute grained powders.


Referring now to FIG. 4, there is shown a graph for CsCaI3 and KCaI3 with excitation at 285, 290 nm wavelength (in dashed line) and emission at 460 nm wavelength for each crystal (in solid line) shown as the respective peaks. Intensity levels are shown in the vertical axis as normalized intensity. A Flourolog3 lifetime spectrofluorometer (horiba Jobin Yvon) was used in the measurements. Emissions and excitation bands are characteristic of Eu2+ 5d to 4f luminescence. The Ca2+ ion provides a substitution site for Ett2+ doping. The characteristic data confirms incorporation of Eu2+ into the lattice of each crystal scintillator in the stable divalent state as a substitute for calcium. Moreover, Eu2+ doping is confirmed to demonstrate excellent luminosity and high spectral energy resolution at normal room temperatures. CsCaI3 and CsCaI3 are discussed in some detail in “Theoretical and experimental characterization of promising new scintillators: Eu2+ CsCaCl3 and CsCaI3” J. App. Phys. 113, 203504 (2013) of Tyagi. Zhuravleva et al. and also in “New single crystal scintillators: CsCaCl3:Eu and CsCaI3:Eu,” Journal of Crystal Growth 352 (2012) pp. 115-119 incorporated by reference as to their entire contents.


Referring to FIG. 5, there are shown graphs for X-Ray radioluminescence spectra for each crystal: CsCaI3:Eu, KCaI3:Eu, and RbCaI3:Eu where the emission peak maxima are at 450, 470 and 470 nm respectively and normalized intensity shown as the vertical axis as before. Radioluminescence spectra were measured at room temperature under continuous irradiation from an X-ray generator (35 kV and 0.1 mA). Again, the emission bands are characteristic of Eu2+ 5d-4f luminescence. The emission is suitable for use with conventional photodetectors known in the art such as photomultiplier tubes (PMT's), for example, a Photonis XP2020Q PMT and fast timing electronics.


Referring now to FIG. 6, there is shown 137Cs gamma-ray energy spectra for the CsCaI3:Eu 3% and KCaI3:Eu 3% crystals. Light output measurements were carried out on samples covered in mineral oil and directly coupled to a photomultiplier tube (PMT) and covered with Teflon tape. A Hamamatsu H3177-50 PMT may be used for the absolute light measurements. Gamma-ray energy spectra were recorded using a 137Cs source with a 6 μsec shaping time. Both the CsCaI3:Eu 3% (generally upper, side-wise square) and KCaI3:Eu 3% (generally lower, triangle pointing down) scintillator crystal spectra exhibit the position of a 662 keV gamma-ray photopeak at a much higher channel number than a benchmark bismuth germanate (BGO) crystal with its photopeak at channel 100, indicating much higher light output. While different Eu doping was used between 1 and 10 mol %, an optimal Eu2+ activator concentration was found to be 3 mol %.


The photo peaks in FIG. 6 were fitted with Gaussian functions to determine the centroid of the peak and the energy resolution. The integral quantum efficiency of the PMT according to the emission spectrum of the scintillators was used to estimate the light output in photons per unit gamma ray energy. Table 2 below shows the absolute light output and energy resolution for the particular samples used for the measurements compared to a NaI:Tl reference sample. The energy resolution at 662 keV was determined from the full width at half maximum (FWHM) of the 662 keV photopeak.













TABLE 2








Light yield,
Energy resolution,



Composition
photons/MeV
%@662 keV




















KCaI3:Eu 3%
60,000
5



CsCaI3:Eu 3%
38,500
7



RbCaI3:Eu 3%
No gamma-ray
NA




photo peak



NaI:Tl
38,000
~7










As can be seen from the table 2, the RbCaI3:Eu 3% sample did not provide a resolved gamma-ray photo peak. On the other hand, the KCaI3:Eu 3% crystal greatly exceeded the benchmark NaI:Tl crystal at a light yield of 60,000 photons per Me V compared with 38,000 for NaI:Tl while the CsCaI3:Eu 3% crystal matched, if not, exceeded the NaI:Tl light yield. As for energy resolution, both the KCaI3:Eu 3% and CsCaI3:Eu 3% crystals exhibited a very acceptable range between 5% (for potassium) and 7% for cesium at 662 keV.


Scintillation decay is shown in FIGS. 7A through 7C for each crystal: where FIG. 7A represents KCaI3:Eu 1%; FIG. 7B represents RbCaI3:Eu 1% and FIG. 7C represents CsCaI3:Eu 1% scintillation decay results in counts over time. Scintillation decay was measured using a time-correlated single photon counting technique and using a 137Cs 662 keV gamma-ray source. Scintillation decay constants obtained from fitting the curves with exponential functions are shown in legends. A primary decay around one μsecond is characteristic of Eu2+ 5d to 4f luminescence.


Referring now to FIG. 8A, there are shown black and white line drawings prepared from photographs of a KCaI3:Eu 3% crystal compared with a metric ruler. All the single crystals depicted in the drawings herein are crack-free and are greater than 0.1 cm in one dimension. The lengthwise ruler indicates that the potassium crystal was grown to a length of over six centimeters and measured approximately 0.5 centimeters in width. Referring now to FIG. 8B, there are shown black and white line drawings prepared from photographs of a CsCaI3:Eu 3% crystal compared with a ruler. A CsCaI3:Eu 1% single crystal is depicted as FIG. 2 of U.S. Ser. No. 61/443,076 filed Feb. 15, 2011, incorporated herein by reference as to its entirety. The lengthwise ruler in inches indicates that the potassium crystal was grown to a length of over two inches and measured approximately 0.5 centimeters in width. CsCaCl3 and CsCaI3 are discussed in some detail in “Theoretical and experimental characterization of promising new scintillators: Eu2+ CsCaCl3 and CsCaI3,” J. App. Phys. 113, 203504 (2013) of Tyagi, Zhuravleva et al. and also in “New single crystal scintillators: CsCaCl3:Eu and CsCaI3:Eu,” Journal of Crystal Growth 352 (2012) pp. 115-119 incorporated by reference as to their entire contents. Referring now to FIG. 8C, there is shown a black and white line drawing prepared from a photograph of a RbCaI3:Eu 3% crystal.


The following table 3 provides a summary of results for CsCaI3:Eu 3% and KCaI3:Eu 3% crystals compared with those of a benchmark NaI:Tl crystal:

















TABLE 3











Primary
LO,








Max
sc,
photons




Crystal
Density

RL,
decay
per


Composition
Tm, ° C.
structure
g/cm3
Zeff
nm
μs
Mev
Hygroscopic?























CsCaI3:Eu
686
orthorhombic
4.06
52.6
450
1.7
38,500
yes


3%


KCaI3:Eu
524
orthorhombic
3.81
50.6
470
.95
60,000
yes


3%


NaI:Tl
651
cubic
3.67
51
415
.23
38,000
yes









In summary for this example, it is demonstrated that practical crystal growth comparable to NaI:Tl may be obtained at reasonable cost (involving congruent melting and acceptable melting point). Since the crystals are hygroscopic, hermetic packaging may be used with conventional photodetectors such as photo-multiplier tubes such as a Photonis XP2020Q PMT and fast timing electronics. X-ray, gamma-ray, and optical excitation have been demonstrated. With improved crystal quality (removal of raw material impurity and improved processing), both light output and energy resolution are expected to improve beyond their current levels.


EXAMPLE 2
CsA1-yEuyX3 (where A=Ca, Sr, Ba, or a Combination Thereof and X=Cl, Br or I or a Combination Thereof) with Divalent Europium Doping where 0≦y≦1

Now, single crystal inorganic crystal scintillators will be described of the formula CsAX3 will be described with divalent Europium doping investigated as above between 1 and 10 mol % where A is calcium (Ca), strontium (Sr) or barium (Ba) or a combination thereof and X is a halide selected from chlorine, bromine or iodine. In particular, it will be shown that a crystal of CsSrCl3:Eu 10% exhibits a light yield on the order of 46,000 photons per MeV and a scintillation decay at 2.6 μseconds and provides excellent gamma-ray and X-ray detection characteristics. The A2′ lattice site provides a substitutional site for the Eu2+doping.


Referring to FIGS. 9A to 9C, FIG. 9A shows a PRIOR ART phase diagram of the CsCl—CaCl2 system whereby CsCl is shown at left and CaCl2 is shown at right between 0 and 100% mol concentration while temperature is depicted along the left vertical axis between 200° C. and 800° C.; FIG. 9B is a similar PRIOR ART phase diagram of the CsCl—SrCl2 system whereby CsCl is shown at left and SrCl2 is shown at right; and FIG. 9C is a PRIOR ART phase diagram of the SrBr2—CsBr system whereby SrBr2 is shown at left and CsBr is shown at right between 0 and 100% mol concentration while temperature is depicted along the left vertical axis between 200° C. and 800° C. Divalent europium was used primarily for doping as follows: r(Eu2+)=1.20 A (CN=7); r(Sr2+)=1.21 A and r(Ca2+)=1.06 A. Perovskite type ABX3 compounds were obtained by congruently melting and with practical crystal growth according to the methods discussed above and below.


Table 4. in part PRIOR ART, below provides a summary of the crystal growth for each scintillator crystal:













TABLE 4







CsCaCl3:Eu 10%
CsSrCl3:Eu 10%
CsSrBr3:Eu 10%



















Crystal
Cubic
Ortho-
Ortho-


structure

rhombic
rhombic


at room


temperature


Melting
910
842
760


point, ° C.


Density, g/cm3
3.0
3.06
3.76


Phase
445
112, 443
No


transition, ° C.









A method of crystal growth has already been described above with respect to a discussion of FIG. 3. Bridgman crystal growth may comprise a gathering of anhydrous 99.99% pure raw materials. The materials may be further purified by vacuum drying and melt filtering. As described above, a quartz ampoule may be employed having, hot and cold zones whereby crystals may be grown under vacuum seal. A Mellen Electro-Dynamic Gradient (EDG) furnace with a translation motor may be utilized to generate heat. The crystal growth parameters may be the same as described above: temperature gradient at 75° C./inch, translation rate at one millimeter per inch and a cool down rate of 5° C. per hour (exemplary). The scintillator crystals were grown with spontaneous orientation. The ternary halide scintillators may be synthesized using vertical gradient freeze (VGF). Bridgman and melt synthesis and other techniques as suggested above.



FIG. 10 is a graph over time of moisture intake of Cs2LiYCl6:Ce and NaI as benchmarks and the following crystals: CsSrCl3:Eu 10%; CsSrBr3:Eu 10% and CsCaCl3:Eu 10% where the latter two crystals exhibit little or no moisture intake. CsSrBr3:Eu 10% and CsCaCl3:Eu 10% both exhibit practically flat moisture intake over a period of 250 minutes (over four hours). Moreover, CsSrCl3exhibits greatly improved moisture intake at 2% over four hours compared with NaI at over 6.5%. The samples were measured in a closed box with controlled environment at room temperature. All samples showed significantly lower moisture sensitivity compared to NaI and CLYC scintillators.



FIG. 11 represents photoluminescence spectra for each of the CsCaCl3: 10%, CsSrCl3:Eu 10% and CsSrBr3:Eu 10% scintillator crystals where dashed lines represent wide excitation bands and solid lines represent emission bands. The emission and excitation bands are characteristic of Eu2+ 5d to 4f luminescence. Incorporation of Eu2+ is thus confirmed into the lattice structures in the stable divalent state of the crystals. Photoluminescence excitation and emission spectra may be measured with a Horiba Fluorolog 3 spectrofluorometer utilizing a Xe lamp excitation source and scanning monochromators. The following table 5 provides a summary of excitation (EXC) bands and emission (EM) bands:













TABLE 5








EXC, nanometers
EM, nanometers



Composition
wavelength
wavelength









CsCaCl3:Eu 10%
278 to 440 nm
450 nm



CsSrCl3:Eu 10%
270 to 430 nm
439 nm



CsSrBr3:Eu 10%
270 to 430 nm
440 nm











FIG. 12 is a graph of normalized intensity versus wavelength in nanometers of X-ray excitation of the CsCaCl3: 10%, CsSrCl3:Eu 10% and CsSrBr3:Eu 10% scintillator crystals. Radiolurninescence spectra were measured at room temperature under continuous irradiation from an X-ray generator (0.1 mA, 35 kV). An Acton monochromator may be used to resolve the spectrum as a function of wavelength. The graph demonstrates successful results of efficient radiolurninescence under X-ray excitation. The emission bands are characteristic of Eu2+ 5d-4f luminescence. The emission bands were at a wavelength suitable for capture using conventional photo detectors such as photo multiplier tubes (PMT's) such as a Photonis XP2020Q PMT and fast timing electronics. The measured emission peaks are as follows: for CsCaCl3:Eu 10%, the peak was at 450 nm; for CsSrCl3:Eu 10%, the peak was at 437 nm; and for CsSrBr3:Eu 10%, the peak was at 443 nm.



FIG. 13A to 13C represent graphs of scintillation decay over time for each crystal whereby FIG. 13A represents CsCaCl3:Eu 10%: FIG. 13B represents CsSrCl3:Eu 10% and FIG. 13C represents CsSrBr3:Eu 10%. Scintillation time profiles were recorded using a 137Cs 662 keV gamma-ray source. Scintillation decay constants obtained from fitting the curves with exponential functions are shown in legends. The primary decay around 2-4 μseconds is characteristic of Eu2+ 5d to 4f luminescence. The measured scintillation decay times were measured as follows: for CsCaCl3:Eu 10%, the decay time was at 4.1 useconds; for CsSrCl3:Eu 10%, the decay time was at 2.6 useconds (the fastest); and for CsSrBr3:Eu 10%, the decay time was at 3.5 μseconds.



FIG. 14A to 14C represent graphs of 137Cs gamma-ray emission spectra for each crystal whereby FIG. 14A represents CsCaCl3:Eu 10%; FIG. 14B represents CsSrCl3:Eu and FIG. 14C represents CsSrBr3:Eu normalized to benchmark bismuth germanate (BGO) with its photopeak at channel 100. Efficient scintillation characteristics were exhibited under excitation by ionizing radiation with respect to all three crystals. The following table 6 provides light yield and energy resolution for each crystal compared with NaI:Tl as a benchmark:














TABLE 6







CsCaCl3:Eu 10%
CsSrCl3:Eu 10%
CsSrBr3:Eu 10%
NaI:Tl




















Light yield,
18000
46000
31000
38000


ph/MeV


Energy resol. @
8.9
>10
6.7
7.1


662 keV, %










As can be seen by the results, CsSrCl3:Eu 10% demonstrates improved light yield over known NaI:Tl.



FIG. 15A to 15B are graphs demonstrating light output proportionality whereby FIG. 15A is a graph of light output per keV versus energy in keV for CsSrBr3:Eu and FIG. 15B is a similar graph for CsCaCl3:Eu. The importance of FIG. 15 is that good proportionality contributes to good energy resolution as these graphs demonstrate good proportionality for light output per keV over a wide range of energy level from 10 to 1000 keV.



FIG. 16A to 16C are black and white line drawings made from photographs of each respective crystal: CsSrCl3:Eu 10%; CsSrBr3:Eu 10% and CsCaCl3:Eu 10%. CsSrCl3:Eu 10% was grown to be about two inches long; however, some cracking may be seen, possibly due to phase transitions. Doping at 1% Eu is studied in U.S. Ser. No. 61/491,074 filed May 27, 2011 by the same inventors and incorporated by reference as to its entire contents. Single crystal samples at Eu 1% doping are shown of CsSrBr3 in FIG. 1 and of CsCaCl3 at Eu 1% doping in FIG. 8. Gamma ray and X-ray scintillation properties of each are provided. The crystals are about one centimeter in cross-section. CsSrBr3:Eu 10% was grown to be about two centimeters in length and was relatively clear, colorless and crack-free. Its circular cross-section was just less than 2 centimeters in diameter. CsCaCl3:Eu 10% was grown to be over three centimeters in length. It too was relatively clear, colorless and crack-free. Its circular cross-section measured about 11/16 inch in diameter.


Table 7 provides a summary table for these crystals as follows compared with benchmark NaI:Tl:














TABLE 7







CsCaCl3:Eu 10%
CsSrCl3:Eu 10%
CsSrBr3:Eu 10%
NaI:Tl




















Crystal structure
Cubic
Orthorhombic
Orthorhombic
Cubic


Melting point, ° C.
910
842
760
651


Density, g/cm3
2.9
3.06
3.76
3.67


Light yield, ph/Mev
18,000
46,000
31,000
38,000


Energy resolution @
8.9
>10
6.7
7.1


662 kEv, %


Primary decay
4.1
1.6
3.5
.23


time, μsec


Hygroscopic
Low
Slightly
Low
Very










The table demonstrates that promising results have been obtained for new, inorganic, single crystals as indicated above when compared with NaI:Tl including good transparency, low to no hygroscopicity, good light output and excellent proportionality. It is expected that with greater effort at purification of raw material and optimizing growth parameters that even better results will be achieved.


A combination crystal is now described comprising CsSr1-xBaxI3:Eu 1% and 3%. Crystals were grown at x=0.00, 0.03, 0.06, 0.09, 0.14 and 0.24. The purpose of graduated substitution of barium for strontium in, for example, an Eu mol 1% doped crystal was to see if the substitution has an impact on the hygroscopocity of CsSrI3 The latter appears to be an absorber of moisture which adversely impacts its ability as a scintillator. As reported in Phys. Status Solidi RRL 5, No. 1, pp. 43-45 (2011), “Crystal growth and characterization of CsSr1-xEuxI3 high light yield scintillators,” of the present inventors, incorporated herein by reference as to its entire contents, single crystals were grown and x-ray and gamma ray scintillation was noted; when x=0.08. then, the light yield was 65000 ph/MeV. Moreover, we have found that some Eu III (versus Eu2+) may appear at the surface and be oxidized while CsBaI3 was studied at Eu mol 1, 3 and 7% doping levels in U.S. Ser. No. 61/491,074 (“the '074 provisional”) filed May 27, 2011 of the same inventors and incorporated by reference herein as to its entire contents; see Optical Materials 36 (2014) pp. 670-674, “The Europium oxidation state in CsSrI3:Eu scintiallators measured by X-ray absorption spectroscopy” of Zhuravleva el al., incorporated by reference as to its entire contents. Pictures of three sample single crystals are shown in FIG. 12 of the '074 provisional at Eu mol 1, 3 and 7% doping levels each having a volume of approximately 50 mm3); FIG. 13 shows the three samples excited with UV light and FIG. 14 provides data for gamma ray detection at Eu mol 7% doping level. Moreover, with partial substitution of barium for strontium, it was expected and proven that the orthorhombic crystal structure and congruent melting characteristics of CsSrI3 are preserved. All of these combination crystals with x values at 0.03, 0.06, 0.09, 0.14 and 0.24 operated as a scintillator and were successfully fabricated as crack-free single crystals. However, with increasing barium concentration, there was exhibited a marked decrease in moisture absorption rate as seen in FIG. 17 taken from FIG. 6 of our article “Effect of Ba substitution in CsSrI3:Eu2+” published in the Journal of Crystal Growth 384 (2013) at 27-32 by the present inventors (the JCG 2013 article) incorporated herein by reference in its entirety and published on line 18 Sep. 2013. FIG. 18 is a collection of graphs showing radioluminescence spectra of CsSr1-xBaxI3: 1% Eu at room temperature, the emission peaks appearing at between 445 nm and 450 nm. The range of 445-450 nm is characteristic of the well-known 5d-4f transition. No impurities of defect emissions are observed. The small variations in peak position do not seem to be correlated with Ba concentration and are more likely due to small variations in crystal quality and optical absorption.



FIG. 8 of the JCG 2013 article shows emission and excitation spectra for 1% Eu for x values between 0.03 and 0.24. The moisture absorption rate shown in FIG. 17 beginning at 0.10%/min with no barium concentration improves 35% with just 3% barium concentration and is improved by 50% to 0.05%/min at 14% barium concentration. This improvement in hygroscopocity is clearly significant. Table 8 below provides a table of increasing effective density and effective atomic number with increased barium concentration;










TABLE 8





Property
CsSr1−xBaxI3:Eu




















Ba Concentration
0.03
0.06
0.09
0.14
0.24


Density (g/cm3) calc.
4.26
4.27
4.28
4.30
4.34


Effective Atomic No.
51.9
51.9
52.0
52.1
52.4









The increased density and effective atomic number resu ts in an enhanced X-ray and gamma ray detection efficiency. Results of the improved scintillation properties are shown below in Table 9;











TABLE 9









CsSr1−xBaxI3:Eu













x = 0.03
x = 0.06
x = 0.09
x = 0.14
x = 0.24
















Melt/Crystal Pt.
632.4/596.4
625.0/594.6
609.2/607.5
610.9/585.4
588.7/579.9


Light Yield (ph/MeV
28,000
26,130
23,910
22,100
18,400


Decay Time (μs)
1.8
1.8
2.0
2.0
2.1


Emission Peak
449
448
448
445
450









X-ray radioluminescence exhibited a peak at 445-450 nm wavelength. The emission bands are characteristic of Eu2+ 5d-4f luminescence. The emission is at a wavelength that is suitable for use with conventional photo detectors such as photo multiplier tubes (PMT's). Ultraviolet/visual excitation and emission were measured with an emission peak at 446 nm. The maximum light output was measured when x was at 3% and Eu mol 1% and measured at 28,000 photons per MeV with 1.9 μsecond decay time, the light output decreased with increasing x such that when x was 24%, the light output was 21,000 photons per MeV when Eu mol was 3% and the scinitillation decay time 1.5 μseconds.


While various aspects of the present invention have been described above, it should be understood that they have been presented by way of example and not limitation. It will be apparent to persons skilled in the relevant art(s) that various changes in form and detail can be made therein without departing from the spirit and scope of the present invention. Thus, the present invention should not be limited by any of the above described exemplary aspects, but should be defined only in accordance with the following claims and their equivalents.


In addition, it should be understood that the figures in the attachments, which highlight the structure, methodology, functionality and advantages of the present invention, are presented for example purposes only. The present invention is sufficiently flexible and configurable, such that it may be implemented in ways other than that shown in the accompanying figures.


Further, the purpose of the foregoing Abstract is to enable the U.S. Patent and Trademark Office and the public generally and especially the scientists, engineers and practitioners in the relevant art(s) who are not familiar with patent or legal terms or phraseology, to determine quickly from a cursory inspection the nature and essence of this technical disclosure. The Abstract is not intended to be limiting as to the scope of the present invention in any way.

Claims
  • 1. A scintillator comprising the chemical composition CsCaI1:yEu wherein y is 0.01 to 0.10 inclusive, grown by one of a Bridgman method, a modified Bridgman method, a Czochralski method, a combined Czochralski/Bridgman method and a vertical gradient freeze method.
  • 2. The scintillator as recited in claim 1 comprising a single crystal greater than 0.1 cm in one dimension when y is between approximately 0.01 and 0.03.
  • 3. A scintillator comprising the chemical composition RbCaI3:yEu wherein y is 0.01 to 0.03 inclusive, grown by one of a Bridgman method, a modified Bridgman method, a Czochralski method, a combined Czochralski/Bridgman method and a vertical gradient freeze method.
  • 4. The scintillator as recited in claim 3 comprising a single crystal greater than 0.1 cm in one dimension when y is approximately 0.03.
  • 5. A scintillator comprising the chemical composition CsCaCl3:yEu wherein y is 0.01 to 0.10 inclusive, grown by one of a Bridgman method, a modified Bridgman method, a Czochralski method, a combined Czochralski/Bridgman method and a vertical gradient freeze method.
  • 6. The scintillator as recited in claim 5 comprising a single crystal greater than 0.1 cm in one dimension.
  • 7. A scintillator comprising the chemical composition CsSrBr3:yEu wherein y is 0.01 to 0.10 inclusive, grown by one of a Bridgman method, a modified Bridgman method, a Czochralski method, a combined Czochralski/Bridgman method and a vertical gradient freeze method.
  • 8. The scintillator as recited in claim 7 comprising a single crystal greater than 0.1 cm in one dimension.
  • 9. A scintillator comprising the chemical composition CsSrCI3:yEu wherein y is approximately 0.10, grown by one of a Bridgman method, a modified Bridgman method, a Czochralski method, a combined Czochralski/Bridgman method and a vertical gradient freeze method.
  • 10. The scintillator as recited in claim 9 comprising a single crystal greater than 0.1 cm in one dimension.
  • 11. A scintillator comprising the chemical composition CsBaxSr1-xI3:yEu wherein y is between approximately 0.01 and 0.03, and x is between 0.00 and 0.24 inclusive, grown by one of a Bridgman method, a modified Bridgman method, a Czochralski method, a combined Czochralski/Bridgman method and a vertical gradient freeze method, a single crystal being formed and exhibiting decreased hygroscopocity with increasing concentration of barium.
  • 12. The scintillator as recited in claim 11 comprising a single crystal greater than 0.1 cm in one dimension.
  • 13. The scintillator as recited in claim 11 wherein barium concentration improves upon the hygroscopocity properties of CsSrI3:yEu wherein y is between approximately 0.01 and 0.03.
  • 14. The scintillator as recited in claim 13 wherein at x=0.03 a moisture absorption rate of CsSrI3:yEu improves from a level of 0.10 to 0.065% per minute or approximately a 35% improvement and, at x greater than 0.14, the improvement in moisture absorption rate is greater than 50%.
Priority Claims (2)
Number Date Country Kind
11165485.1 May 2011 EM regional
102012101199 Feb 2012 DE national
CROSS-REFERENCE TO RELATED APPLICATIONS

The present application is a continuation-in-part of U.S. patent application Ser. No. 13/351,748 filed Jan. 17, 2012, now allowed, which application claims the benefit of U.S. Provisional Application Ser. No. 61/443,076 filed Feb. 15, 2011 and of U.S. Provisional Application Ser. No. 61/491,074 filed May 27, 2011, and is a continuation-in-part of U.S. Patent Application Ser. No. 13/098,654, filed May 2, 2011 (now U.S. Pat. No. 8,692,203 issued Apr. 8, 2014) which claims the benefit of U.S. provisional patent application Ser. No. 61/332,945, filed May 10, 2010, all of Zburavleva et al., all priority applications being incorporated by reference herein in their entirety.

STATEMENT OF GOVERNMENT SUPPORT

The invention was made with government support under Contract No. DHS-DNDO 2009-DN-077-AR1031-03 awarded by the Department of Homeland Security and under DOE-NA22: DE-NA0000473 awarded by the U.S. Department of Energy. The government has certain rights in the invention.

Provisional Applications (3)
Number Date Country
61443076 Feb 2011 US
61491074 May 2011 US
61332945 May 2010 US
Continuation in Parts (2)
Number Date Country
Parent 13351748 Jan 2012 US
Child 14314393 US
Parent 13098654 May 2011 US
Child 13351748 US