Number | Date | Country | Kind |
---|---|---|---|
96 12023 | Sep 1996 | FR |
Number | Name | Date | Kind |
---|---|---|---|
3854092 | Tani et al. | Dec 1974 | |
3919489 | Schillo | Nov 1975 | |
4117527 | Demarest et al. | Sep 1978 | |
4215420 | Kassakian | Jul 1980 | |
4855666 | Jones | Aug 1989 | |
5619081 | Gershen et al. | Apr 1997 |
Entry |
---|
French Search Report from French Patent Application 96 12023, filed Sep. 27, 1996. |
Int. J. Of Electronics, vol. 70, No. 1, Jan. 1991, London, GB, Liang et al., “Transient Model For Gate Turn-Off Thyristor”. |
Instr. And Experimental Techniques, vol. 24, No. 2, Mar. 1981, Apr. 1981, New York, US, pp. 506-508, Belous et al., “Setup For Measuring The Field Effect In Semiconductors”. |