This application is based upon and claims the benefit of priority of the prior Japanese Patent Application No. 2011-282013, filed on Dec. 22, 2011, the entire contents of which are incorporated herein by reference.
A certain aspect of the present invention relates to a circuit substrate.
There is known an acoustic wave filter such as a SAW (Surface Acoustic Wave) filter or a FBAR (Film Bulk Acoustic Resonator) filter, as a filter being superior in high frequency characteristic. Downsizing of a component including an acoustic wave filter is needed as a mobile communication terminal such as a mobile phone is spread. In order to downsize a component, a circuit substrate in which an acoustic wave filter and an electronic component such as a power amplifier or an IC (Integrated Circuit) are provided on an identical substrate is used. Japanese Patent Application Publication No. 2001-189605 discloses that a SAW filter chip is provided on an upper face of a substrate and a filter is structured with an inner interconnection line in the substrate. Japanese Patent Application Publication No. 2011-176061 discloses that a transistor and a SAW filter are provided on an upper face of a substrate.
According to an aspect of the present invention, there is provided a circuit substrate including: a laminate substrate in which a conductive layer and an insulating layer are laminated; a filter chip that has an acoustic wave filter and is provided inside of the laminate substrate; and an active component that is provided on a surface of the laminate substrate and is connected with the filter chip, at least a part of the active component overlapping with a projected region that is a region of the filter chip projected in a thickness direction of the laminate substrate.
With conventional technology, an interconnection line connecting an acoustic wave filter and an electronic component is long. This results in increasing of noise influence. As a result, there was a case where high frequency characteristic of an acoustic wave filter was degraded. And it is difficult to sufficiently downsize a circuit substrate.
First, a description will be given of a module including an acoustic wave filter.
As illustrated in
A BBIC (Base Band Integrated Circuit) 20 inputs a transmit signal of a base band into the RFIC 18. The RFIC 18 up-converts the transmit signal of the base band into a transmit signal of high frequency. The transmit signal is amplified by the PA (Power Amplifier) 16 and is input into the transmit filter 10Tx. The transmit filter 10Tx allows passage of a signal having a frequency in a pass band of the transmit filter 10Tx included in the transmit signal, and suppresses a signal having a frequency out of the pass band of the transmit filter 10Tx included in the transmit signal. A switch 12 is connected with other systems having the duplexer 10, the PA 16, the RFIC 18 and the BBIC 20 (not illustrated in
A ladder type filter or the like is used as the transmit filter 10Tx and the receive filter 10Rx.
A description will be given of an example as a comparative example in which a structure surrounded by a square A in the module is provided on a single circuit substrate.
As illustrated in
A transmit filter chip 110a is a SAW filter chip or the like including the transmit filter 10Tx of
The transmit filter chip 110a and the receive filter chip 110b are flip-chip mounted on the conductive layer 140 provided on an upper face of the laminate substrate 122. A ground terminal GND1 of the transmit filter chip 110a and a ground terminal GND2 of the active component 116a are connected with a ground terminal 146b in common. An output terminal Out1 of the transmit filter chip 110a is connected with the antenna terminal included in the conductive layer 146. The antenna terminal is connected with the switch 12 of
The filter chips (the transmit filter chip 110a and the receive filter chip 110b) and the active component 116a are provided on the upper face of the laminate substrate 122. Therefore, the laminate substrate 122 gets larger. The interconnection line extending along a face direction of the laminate substrate 122 gets longer as well as the interconnection line included in the conductive layer 140, and has a length of 150 μm or more, for example. Therefore, a high frequency signal passing through the interconnection line tends to be subjected to influence of an electrical noise. Thus, the high frequency characteristic of the circuit substrate 100R may be degraded. Locations of the filter chips and the active component 116a and pathways of the interconnection lines may be limited. Therefore, the interconnection lines get longer, and the high frequency characteristic may be greatly degraded. Next, a description will be given of a first embodiment.
A first embodiment is an embodiment in which filter chips (a transmit filter chip and a receive filter chip) are provided inside of a laminate substrate, and an active component is mounted on an upper face (surface) of the laminate substrate.
As illustrated in
An active component 16a is flip-chip mounted on the upper face of the laminate substrate 22. The active component 16a overlaps with a projected region 10c (with reference to a broken line) that is a region of the transmit filter chip 10a projected in a thickness direction of the laminate substrate 22 (up and down direction of
As illustrated in
The active component 16a connected with the transmit filter chip 10a overlaps with the projected region 10c. Therefore, the interconnection line connecting the transmit filter chip 10a and the active component 16a does not include an interconnection line extending in the face direction, and is structured with the via interconnection line 50. A thickness of insulating layers 30 and 32 is, for example, 30 μm or the like. A total length L1 of two interconnection lines connecting the transmit filter chip 10a and the active component 16a is, for example, 60 μm or the like. The interconnection line connecting the transmit filter chip 10a and the active component 16a in the first embodiment is shorter than the comparative example. Thus, the influence of noise can be reduced. Further, a parasitic component such as a parasitic capacitance or a parasitic inductance of the interconnection lines is reduced. Therefore, the high frequency characteristic of the circuit substrate 100 is improved. In order to improve the high frequency characteristic effectively, it is preferable that the transmit filter chip 10a is directly connected with the active component 16a not through another chip component such as an inductor.
The filter chip is provided inside of the laminate substrate 22. Therefore, the freedom degree of the locations of the active component 16a and the pathways of the interconnection lines gets larger. Thus, the circuit substrate 100 can be downsized, and the interconnection line extending along the face direction can be shortened.
The number of the insulating layers and the number of the conductive layers included in the laminate substrate 22 may be changed. The circuit substrate 100 may have at least one of or all of the switch 12, the antenna 14, the BBIC 20 and the RFIC 18 other than circuit elements surrounded by the square A of
The insulating layers 30 and 32 and insulating layers 34, 36 and 38 are made of a resin such as glass epoxy resin or a ceramics. When the insulating layers are made of resin, the housing of the filter chip gets easier. Each terminal of the transmit filter chip 10a and the conductive layers 40, 42 and 44 are made of a metal such as copper (Cu) or aluminum (Al) or an alloy including the metal. A solder resist 24 of
A second embodiment is an embodiment in which whole of the active component 16a is inside of the projected region 10c.
As illustrated in
A third embodiment is an embodiment in which an interconnection line in the face direction is used.
As illustrated in
A fourth embodiment is an embodiment in which a core is used.
As illustrated in
The IDT and the terminal of the filter chip may be provided on the upper face of the filter chip, or may be provided on the lower face of the filter chip. The filter chip may be another acoustic wave filter chip other than the SAW filter chip such as a boundary acoustic wave filter chip or a FBAR filter chip. A duplexer chip in which a transmit filter and a receive filter are provided on a single chip may be provided inside of the laminate substrate 22. In this case, the active component 16a is provided so as to overlap with a projected region of the duplexer chip projected in the thickness direction of the laminate substrate 22. The first embodiment through the fourth embodiment may be applied to an example in which a filter other than the duplexer is provided inside of the laminate substrate 22.
A matching circuit for impedance matching may be provided between the duplexer 10 and the switch 12 of
The present invention is not limited to the specifically described embodiments, but other embodiments and variations may be made without departing from the scope of the claimed invention.
| Number | Date | Country | Kind |
|---|---|---|---|
| 2011-282013 | Dec 2011 | JP | national |
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| Number | Date | Country |
|---|---|---|
| 1431776 | Jul 2003 | CN |
| 1441613 | Sep 2003 | CN |
| 1606234 | Apr 2005 | CN |
| 1094538 | Apr 2001 | EP |
| 2001-189605 | Jul 2001 | JP |
| 2001-313467 | Nov 2001 | JP |
| 2002-359327 | Dec 2002 | JP |
| 2007-273585 | Oct 2007 | JP |
| 2011-176061 | Sep 2011 | JP |
| 10-2011-0091878 | Aug 2011 | KR |
| Entry |
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| Korean Office Action dated Oct. 31, 2013, in a counterpart Korean patent application No. 10-2012-150445. |
| European Search Report dated Apr. 16, 2014, in a counterpart European patent application No. 12190574.9. |
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| Number | Date | Country | |
|---|---|---|---|
| 20130163212 A1 | Jun 2013 | US |