Claims
- 1. In the field of semiconductor processing, a method of simulating a photoresist process, comprising:
- supplying a first database comprising a digital representation of an aerial image of an estimated photoresist pattern, wherein said aerial image was produced by a process simulator simulation of a photoresist process using a patterned mask under conditions specified by a data set, wherein each element of said data set corresponds to one of a plurality of parameters associated with said photoresist process;
- supplying a second database comprising a digital representation of an actual photoresist pattern, wherein said actual photoresist pattern was produced by a process using said photoresist process and said patterned mask under the conditions specified by said data set;
- comparing said first database with said second database to produce an error database indicative of differences between said aerial image and said actual photoresist pattern; and
- modifying said process simulator based upon said error database to minimize said differences between a successive iteration of said aerial image and said photoresist pattern.
- 2. The method of claim 1, wherein said process simulator comprises a computer, said computer including:
- a storage device, wherein said storage device is configured with computer instructions designed to generate, upon execution, said aerial image from said patterned mask and said data set;
- an input device for receiving said patterned mask and said data set and for storing said patterned mask and said data set in said storage device; and
- a processor coupled to said input device and said storage device, for executing said computer instructions and storing said aerial image in said storage device.
- 3. The method of claim 2, wherein said input device comprises a disk drive configured to receive a disk including a digital representation of said patterned mask and said data set.
- 4. The method of claim 2, wherein said computer further includes:
- an output device for providing either a hard copy or a digital representation of said aerial image.
- 5. The method of claim 1, wherein said plurality of parameters associated with said photoresist process include parameters selected from the group consisting of at least one of:
- resist contrast (.gamma.), resist thickness, resist sensitivity, resist solids content, resist viscosity, soft bake temperature, soft bake duration, exposure intensity, exposure duration, source wavelength, source coherency, develop time, developer concentration, developer temperature, developer agitation method, post-bake temperature, and post-bake time.
- 6. The method of claim 1, wherein said supplying said second database comprises:
- scanning said actual photoresist pattern with a scanning electron microscope to produce a scanned image; and
- digitizing said scanned image to produce said second database.
- 7. The method of claim 1, wherein said aerial image includes an alignment mark and said actual photoresist pattern includes a corresponding alignment mark and wherein said comparing said first database with said second database is facilitated by superimposing said alignment mark of said aerial image with said corresponding alignment mark of said actual photoresist pattern.
- 8. The method of claim 1, wherein said patterned mask comprises features distorted by an optimal proximity correction routine.
- 9. In the field of semiconductor processing, a method of simulating a photoresist process, comprising:
- supplying an aerial image from a process simulator of an estimated photoresist pattern that would be produced by a photoresist process using a patterned mask under conditions specified by a data set, wherein each element of said data set corresponds to one of a plurality of parameters associated with said photoresist process;
- generating a first database comprising a digital representation of said aerial image;
- supplying an actual photoresist pattern, wherein said actual photoresist pattern was produced by a process using said photoresist process and said patterned mask under the conditions specified by said data set;
- generating a second database comprising a digital representation of said actual photoresist pattern;
- comparing said first database with said second database to produce an error database indicative of differences between said aerial image and said actual photoresist pattern; and
- modifying said process simulator based upon said error database to minimize said differences between a successive iteration of said aerial image and said photoresist pattern.
- 10. The method of claim 9, wherein said plurality of parameters associated with said photoresist process include parameters selected from the group consisting of at least one of:
- resist contrast (.gamma.), resist thickness, resist sensitivity, resist solids content, resist viscosity, soft bake temperature, soft bake duration, exposure intensity, exposure duration, source wavelength, source coherency, develop time, developer concentration, developer temperature, developer agitation method, post-bake temperature, and post-bake time.
- 11. The method of claim 9, wherein said generating said second database comprises:
- scanning said actual photoresist pattern with a scanning electron microscope to produce a scanned image; and
- digitizing said scanned image to produce said second database.
- 12. The method of claim 9, wherein said aerial image includes an alignment mark and said actual photoresist pattern includes a corresponding alignment mark and wherein said comparing said first database with said second database is facilitated by superimposing said alignment mark of said aerial image with said corresponding alignment mark of said actual photoresist pattern.
- 13. The method of claim 9, wherein said patterned mask comprises features distorted by an optimal proximity correction routine.
Parent Case Info
This application is a continuation of U.S. patent application Ser. No. 08/853,155, entitled "Comparing Aerial Image to SEM of Photoresist or Substrate Pattern for Masking Process Characterization", filed May 8, 1997.
US Referenced Citations (14)
Foreign Referenced Citations (1)
Number |
Date |
Country |
0 698 916 |
Jul 1997 |
EPX |
Continuations (1)
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Number |
Date |
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Parent |
853155 |
May 1997 |
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