Complementary metal oxide silicon image sensor and method of fabricating the same

Abstract

Disclosed is a method of fabricating a CMOS (Complementary Metal Oxide Silicon) image sensor. The method includes the steps of: forming a device protective layer and a metal interconnection on a substrate formed with a light receiving device; forming an inner micro-lens on the metal interconnection; coating an interlayer dielectric layer on the inner micro-lens and then forming a color filter; and forming an outer micro-lens including a planarization layer and photoresist on the color filter. The inner micro-lens is formed by depositing the outer layer on dome-shaped photoresist. The curvature radius of the inner micro-lens is precisely and uniformly maintained and the inner micro-lens is easily formed while improving the light efficiency. Since the fabrication process for the CMOS image sensor is simplified, the product yield is improved and the manufacturing cost is reduced.

Description

BRIEF DESCRIPTION OF DRAWINGS

FIGS. 1A to 1G are sectional views illustrating a method of fabricating a CMOS image sensor according to the related art; and

FIGS. 2A to 2F are sectional views illustrating a method of fabricating a CMOS image sensor according to an embodiment of the present invention.

Claims

1. A method of fabricating a CMOS image sensor, comprising: forming a protective layer on a substrate having a light receiving device thereon;forming a metal interconnection on the protective layer;forming a first micro-lens on the metal interconnection and coating an oxide layer on the first micro-lens;forming a color filter on the oxide layer; andforming a planarization layer on the color filter, and then forming a second micro.-lens.

2. The method as claimed in claim 1, wherein forming the first micro-lens comprises forming a dome-shaped photoresist (PR) through photolithography and heat-treatment processes, and depositing an outer layer on the dome-shaped PR.

3. The method as claimed in claim 2, wherein forming the first micro-lens further comprises depositing the PR on the metal interconnection.

4. The method as claimed in claim 2, wherein the outer layer includes Si3N4 or SiO2.

5. The method as claimed in claim 4, wherein forming the outer layer comprises depositing Si3N4 by low temperature chemical vapor deposition (LTCVD).

6. The method as claimed in claim 4, wherein forming the outer layer comprises depositing SiO2 by low temperature deposition of oxide (LTO).

7. The method as claimed in claim 1, wherein forming the color filter comprises a photolithographic exposure and development process.

8. The method as claimed in claim 1, wherein forming the second micro-lens comprises depositing a second micro-lens material on the planarization layer, photolithographically exposing and developing second micro-lens material, then reflowing the exposed and developed second micro-lens material.

9. The method as claimed in claim 8, wherein the second micro-lens material comprises a second photoresist.

10. The method as claimed in claim 1, wherein the first micro-lens is formed over the light receiving layer.

11. The method as claimed in claim 10, wherein the second micro-lens is formed over the first micro-lens.

12. A method of fabricating a CMOS image sensor, the method comprising the steps of: coating a device protective layer on a substrate having a light receiving device;depositing an aluminum layer on the device protective layer and then selectively etching the aluminum layer, thereby forming an aluminum interconnection;depositing a dielectric layer on the aluminum interconnection;coating a first photoresist (PR) on the dielectric layer, forming a first micro-lens through photolithography and heat-treatment processes, and then depositing an outer layer on the first micro-lens;coating an oxide layer on the outer layer;forming a color filter on the oxide layer by a photolithography process;forming a planarization layer on the color filter; andcoating a second PR on the planarization layer, and then forming a second micro-lens through photolithography and heat-treatment processes.

13. The method as claimed in claim 11, wherein the outer layer includes Si3N4 or SiO2.

14. The method as claimed in claim 12, wherein forming the outer layer comprises depositing Si3N4 by low temperature chemical vapor deposition (LTCVD) or depositing SiO2 by low temperature deposition of oxide (LTO).

15. The method as claimed in claim 11, wherein the first micro-lens is formed over the light receiving layer, and the second micro-lens is formed over the first micro-lens.

16. A CMOS image sensor, comprising: a substrate having a light receiving layer thereon;a protective layer on the substrate, including the light receiving layer;a metal interconnection on the protective layer;a first micro-lens on the metal interconnection, over the light receiving layer;an oxide layer on the micro-lens;a color filter on the oxide layer, over the first micro-lens;a planarization layer on the color filter; anda second micro-lens on the planarization layer, over the color filter.

17. The CMOS image sensor as claimed in claim 16, wherein each of the first and second micro-lenses comprises a dome-shaped or convex photoresist (PR).

18. The CMOS image sensor as claimed in claim 17, wherein the second micro-lens has a contact area with the planarization layer that is greater than a corresponding contact area between the first micro-lens and the metal interconnection.

19. The CMOS image sensor as claimed in claim 16, further comprising an outer layer on the first micro-lens.

20. The CMOS image sensor as claimed in claim 19, wherein the outer layer includes Si3N4 or SiO2.