Claims
- 1. An aqueous polishing mixture for chemical mechanical polishing of semiconductor substrates, the mixture having a pH under 5.0 that comprises a blend of at least two polyacrylic acids, wherein a first polyacrylic acid has a low number average molecular weight of 20,000-100,000 and a second polyacrylic acid has a high number average molecular weight of 200,000-1,500,000, wherein the weight ratio of the low number average molecular weight polyacrylic acid to the high number average molecular weight polyacrylic acid is 10:1 to 1:10.
- 2. The aqueous polishing mixture of claim 1 wherein the mixture contains abrasive particles.
- 3. The aqueous polishing mixture of claim 1 wherein the mixture contains an oxidizing agent.
- 4. The aqueous polishing mixture of claim 1 wherein the mixture contains an inhibitor.
- 5. The aqueous polishing mixture of claim 1 wherein the mixture contains a complexing agent.
- 6. The aqueous polishing mixture of claim 1 wherein the mixture contains abrasive particles, oxidizing agent, inhibitor and complexing agent.
- 7. The aqueous polishing mixture of claim 6 wherein the first polyacrylic acid has a low number average molecular weight of 20,000-40,000, the second polyacrylic acid has a high number average molecular weight of 200,000-300,000 and the weight ratio of the low number average molecular weight polyacrylic acid to the high number average molecular weight polyacrylic acid is 4:1 to 1:4.
- 8. The aqueous polishing mixture of claim 6 wherein the pH is 2.8 to 4.2, the first polyacrylic acid has a low number average molecular weight of 20,000-40,000, the second polyacrylic acid has a high number average molecular weight of 200,000-300,000, the weight ratio of the low number average molecular weight polyacrylic acid to the high number average molecular weight polyacrylic acid is 4:1 to 1:4, the oxidizing agent consists of hydrogen peroxide, the inhibitor is from the group of benzotriazole, tolyltriazole or any mixtures thereof and the complexing agent is a carboxylic acid.
- 9. A method of polishing a surface of a semiconductor wafer comprising the steps of:(a) providing a polishing pad having a polishing surface; (b) holding said wafer in a carrier such that the surface of the wafer is in contact with the polishing surface; (c) moving said carrier to provide both pressure on the surface of the wafer and relative lateral motion between the surface of the wafer and the polishing surface; and (d) providing the aqueous polishing mixture of claim 1 at an interface between the surface of the wafer and the polishing surface.
- 10. An aqueous polishing mixture for chemical mechanical polishing of semiconductor substrates, the mixture having a pH under 5.0 that comprisesa blend of at least two polyacrylic acids, wherein a first polyacrylic acid has a low number average molecular weight of 20,000-100,000 and a second polyacrylic acid has a high number average molecular weight of 200,000-1,500,000, wherein the weight ratio of the low number average molecular weight polyacrylic acid to the high number average molecular weight polyacrylic acid is 10:1 to 1:10, up to 3.0% by weight abrasive particles, 1-15% by weight oxidizing agent, 50-5000 parts per million by weight of an inhibitor, and up to 3.0% by weight complexing agent.
- 11. The aqueous polishing mixture of claim 10 wherein the first polyacrylic acid has a low number average molecular weight of 20,000-40,000, the second polyacrylic acid has a high number average molecular weight of 200,000-300,000 and the weight ratio of the low number average molecular weight polyacrylic acid to the high number average molecular weight polyacrylic acid is 4:1 to 1:4.
- 12. The aqueous polishing mixture of claim 10 wherein the oxidizing agent consists of hydrogen peroxide.
- 13. The aqueous polishing mixture of claim 10 wherein the inhibitor is from the group of benzotriazole, tolyltriazole or mixtures thereof.
- 14. The aqueous polishing mixture of claim 10 wherein the complexing agent is a carboxylic acid.
- 15. The aqueous polishing mixture of claim 10 wherein the pH is 2.8 to 4.2, the first polyacrylic acid has a low number average molecular weight of 20,000-40,000, the second polyacrylic acid has a high number average molecular weight of 200,000-300,000, the weight ratio of the low number average molecular weight polyacrylic acid to the high number average molecular weight polyacrylic acid is 4:1 to 1:4, the oxidizing agent consists of hydrogen peroxide, the inhibitor is from the group of benzotriazole, tolyltriazole or any mixtures thereof and the complexing agent is a carboxylic acid.
- 16. A method of polishing a surface of a semiconductor wafer comprising the steps of:(a) providing a polishing pad having a polishing surface; (b) holding said wafer in a carrier such that the surface of the wafer is in contact with the polishing surface; (c) moving said carrier to provide both pressure on the surface of the wafer and relative lateral motion between the surface of the wafer and the polishing surface; and (d) providing the aqueous polishing mixture of claim 10 at an interface between the surface of the wafer and the polishing surface.
Parent Case Info
This application claims the benefit of U.S. Provisional Application Ser. No. 60/150,443 filed Aug. 24, 1999 and U.S. Provisional Application filed Aug. 11, 2000.
US Referenced Citations (18)
Foreign Referenced Citations (4)
Number |
Date |
Country |
874 390 |
Oct 1998 |
EP |
913 442 |
May 1999 |
EP |
984 049 |
Mar 2000 |
EP |
WO0013217 |
Sep 2000 |
WO |
Provisional Applications (1)
|
Number |
Date |
Country |
|
60/150443 |
Aug 1999 |
US |