Coblenz, "Semiconductor Compounds", Electronics Buyers' Guide, Jun. 1958, Mid-Month, pp. R-4 to R-5. |
Woodall et al., "Ohmic Contacts to N-GaAs Using Graded Band Gap Layers of Ga.sub.1-x As Grown by Molecular Beam Epitaxy," J. Vac. Sci. Technol, 19(3), Sep./Oct. 1981, pp. 626-627. |
Ng et al., "Study of the Consequence of Excess Indium in the Active Channel of InGaAs/InAlAs High Electron Mobility Transistors on Device Properties," Appl. Phys. Lett., 52(9), Feb. 29, 1988, pp. 728-730. |
Electronic Letters, vol. 20, No. 15, Jul. 1984, pp. 615-618, Stevenage, Herts, GB; H. Dambkes et al., "Optimisation of Modulation-Doped Heterostructures for TEGFET Operation at Room Temperature". |
IEEE Electron Device Letters, vol. EDL-8, No. 1, Jan. 1987, pp. 24-26, IEEE, New York, U.S.; C. K. Peng et al.: "Microwave Performance of InAlAs/InGaAs/InP MODFET's". |
Electronics Letters, vol. 17, No. 6, Mar. 19, 1981, pp. 215-216, London, GB; T. Ishibashi: "InP MESFET with In0.53Ga0.47/As/InP Heterostructure Contacts". |