Number | Date | Country | Kind |
---|---|---|---|
2002-059905 | Mar 2002 | JP |
Number | Date | Country |
---|---|---|
4-186845 | Jul 1992 | JP |
06-021101 | Jan 1994 | JP |
08-274118 | Oct 1996 | JP |
10-214848 | Aug 1998 | JP |
Entry |
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“Physics of Semiconductor Devices (Second Edition)” S.M. Sze, p. 45, p. 14 lines 10-14. |
“High Performance In0.5A10.5As/In0.5Ga0.5 As High Electron Mobility Transistors on GaAs” Jpn. J. Appl. Phys. vol. 35 (1996) pp. 5642-5645, Part 1, No. 11, November 1996—cited on p. 24, lines 12-14. |