using III-V semiconductor material

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H01L29/7783

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HELECTRICITY H01Electric elements H01LSEMICONDUCTOR DEVICES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier

Current Industry

H01L29/7783using III-V semiconductor material

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Engineered substrate structures for power and RF applications
- Patent number 12,217,957
- Issue date Feb 4, 2025
- QROMIS, Inc.
- Vladimir Odnoblyudov
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor device including compound and nitride members
- Patent number 12,218,232
- Issue date Feb 4, 2025
- Kabushiki Kaisha Toshiba
- Daimotsu Kato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor with source and drain electrodes...
- Patent number 12,191,382
- Issue date Jan 7, 2025
- International Business Machines Corporation
- Cezar Bogdan Zota
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-channel transistor
- Patent number 12,183,814
- Issue date Dec 31, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Steven J. Bentley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,159,932
- Issue date Dec 3, 2024
- Kabushiki Kaisha Toshiba
- Jumpei Tajima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor layer structure
- Patent number 12,148,821
- Issue date Nov 19, 2024
- Epinovatech AB
- Martin Andreas Olsson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium Nitride high-electron mobility transistors with p-type laye...
- Patent number 12,142,674
- Issue date Nov 12, 2024
- Wolfspeed, Inc.
- Saptharishi Sriram
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor
- Patent number 12,136,667
- Issue date Nov 5, 2024
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Blend Mohamad
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ohmic electrode for two-dimensional carrier gas (2DCG) semiconducto...
- Patent number 12,132,088
- Issue date Oct 29, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Shih-Chien Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 12,125,902
- Issue date Oct 22, 2024
- INNOSCIENCE (SUZHOU) TECHNOLOGY CO., LTD.
- Yi-Lun Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for fabrication of a vertical fin-based field eff...
- Patent number 12,125,914
- Issue date Oct 22, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Clifford Drowley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 12,119,396
- Issue date Oct 15, 2024
- Kabushiki Kaisha Toshiba
- Yasunobu Saito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure, HEMT structure and method of forming the same
- Patent number 12,107,156
- Issue date Oct 1, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Yao-Chung Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor device having a barrier layer wit...
- Patent number 12,100,756
- Issue date Sep 24, 2024
- United Microelectronics Corp.
- Hao-Ming Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 12,094,931
- Issue date Sep 17, 2024
- INNOSCIENCE (SUZHOU) SEMICONDUCTOR CO., LTD.
- Ronghui Hao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor device having an aluminum-doped b...
- Patent number 12,074,214
- Issue date Aug 27, 2024
- Qorvo US, Inc.
- Jose Jimenez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor power device
- Patent number 12,068,410
- Issue date Aug 20, 2024
- Epistar Corporation
- Ya-Yu Yang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Enhancement-mode N-channel and P-channel GaN device integration str...
- Patent number 12,051,742
- Issue date Jul 30, 2024
- Southeast University
- Long Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device and semiconductor device
- Patent number 12,034,069
- Issue date Jul 9, 2024
- Sumitomo Electric Industries, Ltd.
- Shigeki Yoshida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High electron mobility transistor
- Patent number 12,034,068
- Issue date Jul 9, 2024
- Soitec Belgium
- Joff Derluyn
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Engineered substrate structures for power and RF applications
- Patent number 12,009,205
- Issue date Jun 11, 2024
- QROMIS, Inc.
- Vladimir Odnoblyudov
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Implanted isolation for device integration on a common substrate
- Patent number 12,002,878
- Issue date Jun 4, 2024
- GLOBALFOUNDRIES U.S. INC.
- Siva P. Adusumilli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multichannel transistor
- Patent number 11,978,792
- Issue date May 7, 2024
- Visic Technologies Ltd.
- Gregory Bunin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 11,973,135
- Issue date Apr 30, 2024
- Nissan Motor Co., Ltd.
- Keisuke Takemoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super junction gated AlGaN GaN HEMT
- Patent number 11,973,134
- Issue date Apr 30, 2024
- Mitsubishi Electric Research Laboratories, Inc.
- Koon Hoo Teo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including different nitride regions improving...
- Patent number 11,967,641
- Issue date Apr 23, 2024
- Kabushiki Kaisha Toshiba
- Daimotsu Kato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with multichannel heterostructure and manufact...
- Patent number 11,942,525
- Issue date Mar 26, 2024
- INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- Anbang Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light-driven transition from insulator to conductor
- Patent number 11,923,245
- Issue date Mar 5, 2024
- Bowling Green State University
- Farida Selim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structures for a high-electron-mobility transistor and related methods
- Patent number 11,888,051
- Issue date Jan 30, 2024
- GLOBALFOUNDRIES Singapore Pte. Ltd.
- Jiacheng Lei
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Superlattice FINFET with tunable drive current capability
- Patent number 11,881,511
- Issue date Jan 23, 2024
- Intel Corporation
- Nidhi Nidhi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20250040174
- Publication date Jan 30, 2025
- Kabushiki Kaisha Toshiba
- Jumpei TAJIMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING HEAT SHIELD
- Publication number 20240421217
- Publication date Dec 19, 2024
- Analog Devices, Inc.
- James G. Fiorenza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GaN TRANSISTOR HAVING MULTI-THICKNESS FRONT BARRIER
- Publication number 20240413205
- Publication date Dec 12, 2024
- Efficient Power Conversion Corporation
- Robert Beach
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THEREOF
- Publication number 20240405114
- Publication date Dec 5, 2024
- Huawei Technologies Co., Ltd
- Gilberto Curatola
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OHMIC ELECTRODE FOR TWO-DIMENSIONAL CARRIER GAS (2DCG) SEMICONDUCTO...
- Publication number 20240371951
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Shih-Chien Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FOLDED CHANNEL GALLIUM NITRIDE BASED FIELD-EFFECT TRANSISTOR AND ME...
- Publication number 20240355921
- Publication date Oct 24, 2024
- INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES
- Sen HUANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR DEVICE HAVING AN ALUMINUM-DOPED B...
- Publication number 20240355917
- Publication date Oct 24, 2024
- Qorvo US, Inc.
- Jose Jimenez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EPITAXIAL STRUCTURE
- Publication number 20240170564
- Publication date May 23, 2024
- GLOBALWAFERS CO., LTD.
- PO-JUNG LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VOLTAGE REGULATOR CIRCUIT
- Publication number 20240136351
- Publication date Apr 25, 2024
- STMicroelectronics (Rousset) SAS
- Loic BOURGUINE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III-NITRIDE HIGH-ELECTRON MOBILITY TRANSISTORS WITH BURIED P-...
- Publication number 20240105829
- Publication date Mar 28, 2024
- Wolfspeed, Inc.
- Saptharishi SRIRAM
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL-INSULATOR-METAL CAPACITOR DEVICE WITH INTEGRATED WIRE BONDING...
- Publication number 20240105763
- Publication date Mar 28, 2024
- Wolfspeed, Inc.
- Jeremy Fisher
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMPOUND SEMICONDUCTOR DEVICES WITH A CONDUCTIVE COMPONENT TO CONTR...
- Publication number 20240097016
- Publication date Mar 21, 2024
- Analog Devices, Inc.
- James G. Fiorenza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ULTRALOW NOISE TRANSISTOR AMPLIFIERS VIA IMPROVED QUANTUM CONFINEMENT
- Publication number 20240088283
- Publication date Mar 14, 2024
- California Institute of Technology
- Austin Minnich
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PACKAGED STRUCTURES FOR LATERAL HIGH VOLTAGE GALLIUM NITRIDE DEVICES
- Publication number 20240021677
- Publication date Jan 18, 2024
- GANPOWER INTERNATIONAL INC
- Zhanming LI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR DEVICE
- Publication number 20240006523
- Publication date Jan 4, 2024
- Huawei Technologies Co., Ltd
- Samir Mouhoubi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Enhancement High Electron Mobility Transistor and Manufacturing Met...
- Publication number 20230420498
- Publication date Dec 28, 2023
- RICHTEK TECHNOLOGY CORPORATION
- Han-Chung Tai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR FABRICATION OF A VERTICAL FIN-BASED FIELD EFF...
- Publication number 20230411525
- Publication date Dec 21, 2023
- NEXGEN POWER SYSTEMS, INC.
- Clifford Drowley
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FABRICATING THE SAME
- Publication number 20230387280
- Publication date Nov 30, 2023
- UNITED MICROELECTRONICS CORP.
- Yen-Tsai Yi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATION OF P-CHANNEL AND N-CHANNEL E-FET III-V DEVICES WITH OPT...
- Publication number 20230387281
- Publication date Nov 30, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Man-Ho Kwan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FABRICATING THE SAME
- Publication number 20230378314
- Publication date Nov 23, 2023
- UNITED MICROELECTRONICS CORP.
- Bo-Rong Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FABRICATING THE SAME
- Publication number 20230369448
- Publication date Nov 16, 2023
- UNITED MICROELECTRONICS CORP.
- Bo-Rong Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Polarization-Engineered Heterogeneous Semiconductor Heterostructures
- Publication number 20230352571
- Publication date Nov 2, 2023
- The Government of the United States of America, as represented by the Secreta...
- Karl D. Hobart
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Polarization-Engineered Heterogeneous Semiconductor Heterostructures
- Publication number 20230352541
- Publication date Nov 2, 2023
- The Government of the United States of America, as represented by the Secreta...
- Karl D. Hobart
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHOTONIC DEVICES
- Publication number 20230333316
- Publication date Oct 19, 2023
- RAYTHEON BBN TECHNOLOGIES CORP.
- Mohammad Soltani
- G02 - OPTICS
Information Patent Application
SEMICONDUCTOR LAYER STRUCTURE
- Publication number 20230327009
- Publication date Oct 12, 2023
- Epinovatech AB
- Martin Andreas Olsson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH HIGH-ELECTRON MOBILITY TRANSISTOR
- Publication number 20230327008
- Publication date Oct 12, 2023
- International Business Machines Corporation
- Eunjung Cha
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AN...
- Publication number 20230317839
- Publication date Oct 5, 2023
- Fujitsu Limited
- Shirou OZAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MICRO-ELECTRONIC DEVICE WITH INSULATED SUBSTRATE, AND ASSOCIATED MA...
- Publication number 20230282710
- Publication date Sep 7, 2023
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Julien BUCKLEY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE INCLUDING DIFFERENT NITRIDE REGIONS AND METHOD...
- Publication number 20230268430
- Publication date Aug 24, 2023
- Kabushiki Kaisha Toshiba
- Daimotsu Kato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RADIATION-HARD, TEMPERATURE TOLERANT, GAN HEMT DEVICES FOR RADIATIO...
- Publication number 20230178644
- Publication date Jun 8, 2023
- National Research Council of Canada
- Jean-Paul NOËL
- H01 - BASIC ELECTRIC ELEMENTS

using III-V semiconductor material

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Engineered substrate structures for power and RF applications

Semiconductor device including compound and nitride members

High electron mobility transistor with source and drain electrodes...

Multi-channel transistor

Semiconductor device

Semiconductor layer structure

Gallium Nitride high-electron mobility transistors with p-type laye...

Transistor

Ohmic electrode for two-dimensional carrier gas (2DCG) semiconducto...

Semiconductor device and method for manufacturing the same

Method and system for fabrication of a vertical fin-based field eff...

Semiconductor device

Semiconductor structure, HEMT structure and method of forming the same

High electron mobility transistor device having a barrier layer wit...

Semiconductor device and method for manufacturing the same

High electron mobility transistor device having an aluminum-doped b...

Semiconductor power device

Enhancement-mode N-channel and P-channel GaN device integration str...

Method of manufacturing semiconductor device and semiconductor device

High electron mobility transistor

Engineered substrate structures for power and RF applications

Implanted isolation for device integration on a common substrate

Multichannel transistor

Semiconductor device

Super junction gated AlGaN GaN HEMT

Semiconductor device including different nitride regions improving...

Semiconductor device with multichannel heterostructure and manufact...

Light-driven transition from insulator to conductor

Structures for a high-electron-mobility transistor and related methods

Superlattice FINFET with tunable drive current capability

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE INCLUDING HEAT SHIELD

GaN TRANSISTOR HAVING MULTI-THICKNESS FRONT BARRIER

FIELD EFFECT TRANSISTOR AND METHOD OF MANUFACTURING THEREOF

OHMIC ELECTRODE FOR TWO-DIMENSIONAL CARRIER GAS (2DCG) SEMICONDUCTO...

FOLDED CHANNEL GALLIUM NITRIDE BASED FIELD-EFFECT TRANSISTOR AND ME...

HIGH ELECTRON MOBILITY TRANSISTOR DEVICE HAVING AN ALUMINUM-DOPED B...

EPITAXIAL STRUCTURE

VOLTAGE REGULATOR CIRCUIT

GROUP III-NITRIDE HIGH-ELECTRON MOBILITY TRANSISTORS WITH BURIED P-...

METAL-INSULATOR-METAL CAPACITOR DEVICE WITH INTEGRATED WIRE BONDING...

COMPOUND SEMICONDUCTOR DEVICES WITH A CONDUCTIVE COMPONENT TO CONTR...

ULTRALOW NOISE TRANSISTOR AMPLIFIERS VIA IMPROVED QUANTUM CONFINEMENT

PACKAGED STRUCTURES FOR LATERAL HIGH VOLTAGE GALLIUM NITRIDE DEVICES

FIELD EFFECT TRANSISTOR DEVICE

Enhancement High Electron Mobility Transistor and Manufacturing Met...

METHOD AND SYSTEM FOR FABRICATION OF A VERTICAL FIN-BASED FIELD EFF...

HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FABRICATING THE SAME

INTEGRATION OF P-CHANNEL AND N-CHANNEL E-FET III-V DEVICES WITH OPT...

HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FABRICATING THE SAME

HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR FABRICATING THE SAME

Polarization-Engineered Heterogeneous Semiconductor Heterostructures

Polarization-Engineered Heterogeneous Semiconductor Heterostructures

PHOTONIC DEVICES

SEMICONDUCTOR LAYER STRUCTURE

SEMICONDUCTOR DEVICE WITH HIGH-ELECTRON MOBILITY TRANSISTOR

SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AN...

MICRO-ELECTRONIC DEVICE WITH INSULATED SUBSTRATE, AND ASSOCIATED MA...

SEMICONDUCTOR DEVICE INCLUDING DIFFERENT NITRIDE REGIONS AND METHOD...

RADIATION-HARD, TEMPERATURE TOLERANT, GAN HEMT DEVICES FOR RADIATIO...