Claims
- 1. A semiconductor device comprising:a semiconductor substrate optionally personalized with electronic devices formed thereon; at least one copper interconnect pad formed on said substrate; and a layer of a zinc complex formed on said at least one interconnect pad, wherein said complex comprises: copper ion, zinc ion, an organic acid and an azole.
- 2. The semiconductor device, according to claim 1, wherein said zinc complex further comprises a surfactant.
- 3. The semiconductor device, according to claim 1, wherein said zinc complex further comprises an amine.
- 4. The semiconductor device, according to claim 1, wherein said zinc complex further comprises a complexing agent.
- 5. The semiconductor device, according to claim 1, wherein the molar ratio of said zinc ion to said azole is from about about 1:1 to about 2:1.
- 6. The semiconductor device, according to claim 1, wherein said azole is benzotriazole.
- 7. The semiconductor device, according to claim 2, wherein said surfactant is a nonionic surfactant.
- 8. The semiconductor device, according to claim 1, wherein said surfactant is selected from the group consisting of SANDOPAN EGO and Triton DF16.
- 9. The semiconductor device, according to claim 1, further comprising ammonia.
- 10. The semiconductor device, according to claim 4, wherein said complexing agent is triethanolamine.
- 11. The semiconductor device, according to claim 1, wherein said organic acid is acetic acid.
- 12. The semiconductor device, according to claim 1, wherein said zinc complex layer is deposited from a solution comprising:at least one azole present at a concentration of from about 0.001 to about 0.5 molar; a zinc salt having present at a concentration of from about 0.1 to about 1 molar; an organic acid; and a complexing agent, and wherein the pH of said solution is from about 5 to about 8.
- 13. The semiconductor device, according to claim 1, further comprising a layer of a solder applied to said zinc complex layer.
Priority Claims (1)
Number |
Date |
Country |
Kind |
9722692 |
Oct 1997 |
GB |
|
REFERENCE TO RELATED APPLICATION
This is a division of application Ser. No. 09/838,876, filed Apr. 23, 2001, which issued as U.S. Pat. No. 6,635,123, which is a continuation of Ser. No. 09/137,072, filed Aug. 20, 1998, now abandoned.
US Referenced Citations (4)
Number |
Name |
Date |
Kind |
3803047 |
Hwa |
Apr 1974 |
A |
4343660 |
Martin |
Aug 1982 |
A |
5173130 |
Kinoshita et al. |
Dec 1992 |
A |
5783059 |
Cavallotti et al. |
Jul 1998 |
A |
Foreign Referenced Citations (3)
Number |
Date |
Country |
0428260 |
May 1991 |
EP |
1390843 |
Apr 1975 |
GB |
53149836 |
Dec 1978 |
JP |
Continuations (1)
|
Number |
Date |
Country |
Parent |
09/137072 |
Aug 1998 |
US |
Child |
09/838876 |
|
US |