Claims
- 1. Apparatus for use within a corrosive semiconductor device process comprising:
a component part having a surface; and a magnesium fluoride coating deposited upon said surface of said component part; wherein said magnesium fluoride coating has a density of at least about 85% and a purity of at least about 99%.
- 2. The apparatus as in claim 1, wherein said magnesium fluoride coating has a density of between 85% to 90%.
- 3. The apparatus as in claim 1, wherein said magnesium fluoride coating has a density of about 100%.
- 4. The apparatus as in claim 1, wherein said surface of said component part has a surface finish of less than about 10 RA.
- 5. The apparatus as in claim 1, wherein said magnesium fluoride coating is formed upon said surface of said component part at a temperature of at least about 250° C.
- 6. The apparatus as in claim 1, wherein said magnesium fluoride coating is formed at a pressure of lower than about 1×10−5 torr.
- 7. The apparatus as in claim 1, wherein said magnesium fluoride coating is annealed at a temperature of greater than about 600° C. after being formed upon said surface of said component part.
- 8. The apparatus as in claim 1, wherein said component part is a ceramic heater.
- 9. The apparatus as in claim 1, wherein said component part comprises aluminum nitride or aluminum.
- 10. A semiconductor device processing chamber, comprising:
a support pedestal; and a magnesium fluoride coating covering said support pedestal; wherein said magnesium fluoride coating has a density of at least about 85% and a purity of at least about 99%.
- 11. The semiconductor device processing chamber of claim 10, wherein said support pedestal is a ceramic heater.
- 12. The semiconductor device processing chamber of claim 10, wherein said support pedestal comprises aluminum nitride or aluminum.
- 13. A method of forming a coated part, comprising the step of:
coating a component part with magnesium fluoride; wherein said magnesium fluoride coating has a density of at least about 85% and a purity of at least about 99%, and said coating reduces corrosion of said component part upon exposure to a corrosive environment.
- 14. The method of claim 13, wherein said magnesium fluoride coating has a density of between about 85-90%.
- 15. The method of claim 13, wherein said magnesium fluoride coating has a density of about 100%.
- 16. The method of claim 13, wherein said corrosive environment comprises fluorine.
- 17. The method of claim 13, wherein said coating step is performed at a pressure of not more than about 1×10−5 torr.
- 18. The method of claim 13, wherein said coating step is performed at a temperature of at least about 250° C.
- 19. The method of claim 13, wherein said component part comprises aluminum nitride or aluminum.
- 20. The method of claim 13, wherein said component part has a surface finish of less than about 10 RA.
- 21. The method of claim 14, further comprising the step of annealing said coating at a temperature of at least about 600° C.
CROSS REFERENCE TO RELATED APPLICATIONS
[0001] This application claims priority to U.S. provisional application serial No. 60/106,530, entitled “Improved Corrosion Resistant Coating,” filed on Oct. 31, 1998, which is herein incorporated by reference. This application is related to commonly-assigned U.S. patent application Ser. No. ______, (Attorney Docket 2929) entitled “Corrosion Resistant Coating,” filed simultaneously herewith; which is herein incorporated by reference.
Provisional Applications (1)
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Number |
Date |
Country |
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60106530 |
Oct 1998 |
US |