Claims
- 1. An apparatus for the metalizing of substrates comprising:
a vacuum chamber having a plurality of vacuum locks communicating therewith for facilitating the ingress and egress of substrates from and to the ambient atmosphere; means for evacuating air from said chamber; a substrate carrier located in said chamber; means for providing a supply of substrates for introduction to said chamber through at least one of said vacuum locks; means for introducing substrates to said chamber through said vacuum locks; means for positioning said substrates introduced via said vacuum locks in said substrate carrier; at least one sputtering means located within said chamber; means for moving said substrate carrier to position substrates under said sputtering means for a predetermined period of time; means for activating said sputtering means in timed relationship to the passage of substrates therebeneath; and means for removing substrates from said chamber via a different vacuum lock than the vacuum lock through which the substrates entered said chamber.
- 2. The apparatus of claim 1, wherein each of said sputtering means includes a magnetron.
- 3. The apparatus of claim 1, wherein each of said vacuum locks includes an aperture communicating with said means for introducing substrates to said chamber for the introduction of discs therethrough.
- 4. An apparatus according to claim 1, wherein said chamber is circular and said substrate carrier is in the form of a dial rotationally movable in said chamber.
- 5. An apparatus according to claim 4, wherein said apparatus comprises first and second vacuum chambers and first and second sputtering means.
- 6. An apparatus according to claim 5 wherein said first and second vacuum chambers are positioned opposite each other along said substrate carrier.
- 7. An apparatus according to claim 6, wherein said first and second sputtering means are positioned opposite each other in said chamber along said substrate carrier.
- 8. An apparatus according to claim 7, wherein said sputtering means and said vacuum locks are arrayed alternately around said chamber.
- 9. An apparatus according to claim 8, wherein said substrates entering said chamber via said first vacuum lock travel in a linear direction opposite the linear direction of travel of substrates entering said chamber via said second vacuum lock.
- 10. An apparatus according to claim 4, wherein said substrates are compact discs.
- 11. An apparatus according to claim 4, wherein said substrates are semiconductor wafers.
- 12. An apparatus according to claim 4, wherein said substrates comprise plastic.
- 13. An apparatus according to claim 4, wherein said substrates comprise ceramic.
- 14. An apparatus according to claim 4, wherein said substrates comprise metal.
- 15. A method of metalizing substrates comprising:
providing a supply of substrates; introducing substrates to a vacuum chamber through a first vacuum lock; passing said substrates under sputtering means for a predetermined amount time to metalize said substrate; and removing said metalized substrates from said vacuum chamber via a second vacuum lock.
- 16. A method according to claim 15, further comprising the step of adding a second sputtering means such that:
substrates are also introduced to said vacuum chamber via said second vacuum lock; substrates introduced via said second vacuum lock pass under said second sputtering means for a predetermined amount of time to metalize said substrates; and substrates metalized by said second sputtering means exit said chamber via said first vacuum lock.
- 17. A method of metalizing substrates comprising:
providing a supply of substrates; introducing substrates to a vacuum chamber through a first vacuum lock; introducing substrates to said vacuum chamber through a second vacuum lock; passing substrates introduced to said vacuum chamber via said first vacuum lock under first sputtering means for a predetermined amount of time to metalize said substrates; passing substrates introduced to said vacuum chamber via said second vacuum lock under second sputtering means for a predetermined amount of time to metalize said substrates; removing said substrates metalized by said first sputtering means via said second vacuum chamber; and removing said substrates metalized by said second sputtering means via said first vacuum chamber.
- 18. A method according to claim 17, wherein said supply of substrates comprises at least first and second substrates kept separate by said method.
- 19. A method according to claim 18, wherein all said first substrates are introduced to said vacuum chamber via said first vacuum lock.
- 20. A method according to claim 19, wherein all said second substrates are introduced to said vacuum chamber via said second vacuum lock.
- 21. A method according to claim 20, wherein said first substrates travel in a first linear direction through said chamber and said second substrates travel in a second linear direction through said chamber.
- 22. A method according to claim 21, further comprising the step of maintaining the substrates in position in said vacuum chamber through use of locking means associated with a centering pin used to position said substrates during movement of said substrates between said vacuum locks.
Parent Case Info
[0001] This is a continuation-in-part of U.S. patent application Ser. No. 08/355,664, filed Dec. 14, 1994.
Continuations (1)
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Number |
Date |
Country |
Parent |
08478187 |
Jun 1995 |
US |
Child |
08355664 |
Dec 1994 |
US |
Continuation in Parts (1)
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Number |
Date |
Country |
Parent |
08355664 |
Dec 1994 |
US |
Child |
09489529 |
Jan 2000 |
US |