Claims
- 1. A method of depositing photoresist material on an integrated circuit wafer comprising:providing a cross-shaped resist dispenser including a plurality of resist dispense nozzles; dispensing photoresist material through the plurality of resist dispense nozzles to an integrated circuit wafer; and rotating at least one of the cross-shaped resist dispenser and the integrated circuit wafer.
- 2. The method of claim 1, wherein the step of rotating at least one of the cross-shaped resist dispenser and the integrated circuit wafer comprises rotating both the cross-shaped resist dispenser and the integrated circuit wafer.
- 3. The method of claim 2, wherein the cross-shaped resist dispenser rotates in the opposite direction of the rotation of the integrated circuit wafer.
- 4. The method of claim 1, wherein the cross-shaped resist dispenser includes a resist dispense nozzle for every 0.25 to 4 square mm of area.
- 5. The method of claim 1, wherein the length of the cross-shaped resist dispenser is substantially equal to the diameter of the integrated circuit wafer.
- 6. A method of dispensing photoresist material on a wafer in an integrated circuit fabrication process, the method comprising:providing a wafer supporting structure which supports an integrated circuit wafer; providing a cross-shaped platter having a plurality of dispensing nozzles for dispensing resist material on the integrated circuit wafer; dispensing photoresist material through the plurality of dispensing nozzles to the integrated circuit wafer; and rotating the cross-shaped platter.
- 7. The method of claim 6, further comprising rotating the wafer supporting structure.
- 8. The method of claim 6, wherein the length of the cross-shaped platter is substantially equal to the diameter of the integrated circuit wafer.
- 9. The method of claim 6, wherein the plurality of dispensing nozzles are separated from each other by a distance of 0.5 to 2 millimeters (mm).
- 10. The method of claim 6, wherein the cross-shaped platter has a diameter of 150 mm or 300 mm.
- 11. The method of claim 6, wherein the wafer supporting structure is configured to be selectively rotated.
- 12. The method of claim 6, wherein the dispensing photoresist material step produces a dispensed photoresist thickness of 3 micrometers (μm) to 5 μm.
- 13. A method of coating a substrate with a soluble material, the method comprising:dispensing a soluble material from a cross-shaped dispenser located in a spin chamber, the cross-shaped dispenser having a plurality of dispensing nozzles; providing a substrate support which locates a substrate within a proximity distance of the cross-shaped dispenser; and spinning the substrate such that the soluble material is distributed about the substrate.
- 14. The method of claim 13, further comprising spinning the cross-shaped dispenser.
- 15. The method of claim 14, wherein spinning the cross-shaped dispenser spins the cross-shaped dispenser in a direction opposite to the direction of the substrate.
- 16. The method of claim 13, wherein the cross-shaped dispenser has a diameter of 150 mm to 300 mm.
- 17. The method of claim 13, wherein the plurality of dispensing nozzles are separated by a distance of 0.5 mm to 2 mm.
- 18. The method of claim 13, wherein the soluble material is a resist material.
- 19. The method of claim 13, further comprising drying the soluble material.
- 20. The method of claim 13, wherein the plurality of nozzles are 0.1 mm to 2 mm in width.
CROSS REFERENCE TO RELATED APPLICATIONS
This application is related to U.S. application Ser. No. 09/760,243, filed Jan. 12, 2001, entitled DISC-SHAPED RESIST DISPENSING SYSTEM AND METHOD, filed by Yu et al. on the same day and assigned to the same assignee as this application.
US Referenced Citations (10)