PCT International Search Report Dated Dec. 28, 1998, 7 pages. |
U.S. application No. 08/840,209, Chen et al., filed Apr. 11, 1997. |
U.S. application No. 08/948,799, Xi et al., filed Oct. 10, 1997. |
U.S. application No. 08/948,895, Sahin et al., Oct. 10, 1997. |
Y. Matsubara, K. Endo, T. Tatsumi, H. Ueno, K. Sugai, and T. Horiuchi, “Low-k Fluorinated Amorphous Carbon Interlayer Technology for Quarter Micron Devices,” pp. 14.6.1-14.6.4 (1996) (No month). |
Stuardo Robles, Loreto Vasquez, Moshe Eizenberg, and Farhad Moghadam, Characterization of High Density Plasma Chemical Vapor Deposited α-Carbon and α-Fluorinated Carbon Films For Ultra Low Dielectric Applications, 8 pgs. (No date). |
A. Grill, V. Patel, K.L. Saenger, C. Jahnes, S.A. Cohen, A.G. Schrott, D. C. Edelstein, and J.R. Paraszczak, IBM-Research Division, “Diamondlike Carbon Materials as Low-k Dielectrics For Multilevel Interconnects in ULSI.” 10 pgs. Fall 1996. |
Kazuhiko Endo and Toru Tatsumi, “Preparation and Properties of Fluorinated Amorphous Carbon Thin Films By Plasma Enhanced Chemical Vapor Deposition,” pp. 249-254 1995 (No month). |
S. Takeishi, H. Kudo, R. Shinohara, M. Hoshino, S. Fukuyama, J. Yamaguchi, and M. Tamada, “Fluorocarbon Films Deposited by PECVD with High Thermal Resistance and Low Dielectric Constants,” pp. 71-77 (No date). |
Alfred Grill, “Diamondlike Carbon Materials As Low-k Dielectrics For Multilevel Interconnects in ULSI,” Abstract, 2 pgs. (No date). |