The present invention relates to a damping device, in particular a device for damping a movement of a seismic mass of a micromechanical inertial sensor.
In microsystems technology, components having dimensions in the micrometer range interact in systems (Micro-Electro-Mechanical Systems [MEMS]) for extremely diverse applications. Such micromechanical systems generally have one or a plurality of sensors and actuators as well as control electronics.
The use of micromechanical systems is conceivable wherever sensors or actuators and electronics interact. One of the largest areas of application is inertial sensors such as, e.g., gyroscope sensors, acceleration sensors, and inclination sensors. Among other things, they are used in motor vehicles for the deployment of airbags and for skidding and rollover detection.
A large segment in the field of inertial sensors is represented by pure acceleration sensors which are usually used to detect linear accelerations. Often such acceleration sensors are manufactured from silicon. Such sensors are generally spring-mass systems in which the “springs” are silicon webs of only a few μm in width and the so-called seismic mass, i.e., the mass element exposed to the acceleration to be detected, is also made of silicon. The deflection of the seismic mass in acceleration makes it possible to measure a change in the electrical capacitance between the spring-suspended part and a fixed reference electrode. They are used, e.g., for the deployment of airbags in motor vehicles. An overview of current manufacturing techniques may be found, e.g., in H.-P. Trah, R. Müller-Fiedler, Mikrosystemtechnik im Automobil [Microsystem Technology in the Automobile], Physik Journal 1 (2002), No. 11, pp. 39-44.
Yaw rate sensors (also known as rotational speed sensors) represent another large area in the field of inertial sensors. Single-axis or multiple-axis micromechanical yaw rate sensors are used for extremely diverse applications (in motor vehicles, e.g., for ESP, and navigation and rollover sensing (ROSE); in the consumer segment, e.g., for image stabilization, motion detection, and navigation). A current implementation form of such sensors uses the Coriolis effect: A mass supported by springs is caused to oscillate in a first direction by a drive mechanism, causing a Coriolis effect to act on the mass if a rate of rotation in a second direction is present. This force acts perpendicularly to both the drive direction and the rate of rotation present and, for example, causes the mass to move or oscillate in this third direction.
Micromechanical inertial sensors are normally implemented as oscillating spring-mass damper systems. The pure acceleration sensors in particular are frequently equipped with gas damping through a gas inclusion having a specific internal pressure in the sensor cavity, which favorably influences the transient response of the measuring elements. An oscillator used as an acceleration sensor requires a low mechanical quality for its intended operation. Furthermore, adequate mechanical damping favors the clipping behavior of an acceleration sensor in the case of an overload. In contrast, a rotational speed sensor is normally operated at low internal pressure in the sensor cavity and accordingly with a high mechanical quality. This makes lower drive powers necessary, more selective operation with respect to interference accelerations is achieved, and the electromechanical noise of the sensor element is lower. Thus, different qualities and accordingly different internal pressures in the sensor cavity are needed in acceleration and yaw rate sensors for optimal operation.
If it is desired to accommodate yaw rate and acceleration sensor cores together in one micromechanical cavity, this gives rise to the problem that the acceleration sensor requires a low mechanical quality, i.e., a high internal pressure for its intended operation, while the yaw rate sensor requires a high mechanical quality, i.e., a low internal pressure. A similar problem arises in the case of acceleration sensors if capping technologies are to be used that initially favor a low internal pressure and a gas filling must be provided later involving additional complexity.
The present invention provides a device which overcomes the aforementioned limitations. According to the present invention, a device for damping a movement of a seismic mass of a micromechanical inertial sensor is provided, which is designed to apply a force to the seismic mass damping the movement of the seismic mass as a function of the values of at least one movement parameter of the seismic mass, the damping being produced electrically, i.e., electrostatically and/or electromagnetically and/or piezoelectrically.
The device of the present invention advantageously makes it possible to situate acceleration and yaw rate sensor cores in a common sensor cavity having damping actions optimally adjustable for both sensor types. This is not feasible in conventional pure gas damping. Preferably, the present invention therefore replaces the gas damping by an electrostatic, electromagnetic and/or piezoelectric damping, so that in each case the internal pressure used in the sensor cavity is as low as possible and the damping and accordingly the resulting quality of the oscillating structures is produced by suitably regulated forces. Furthermore, the advantage exists that in the case of acceleration sensors in technologies favoring low internal pressures in the sensor cavity, no additional gas filling is necessary if the damping adjustment techniques of the present invention are used. In acceleration sensors, the techniques for damping adjustment according to the present invention are readily usable in normal operation. If, in the case of an overload, the forces that these techniques according to the present invention produce (in particular the electrostatic negative feedback forces) should be exceeded by the need for damping, the possibility exists to miniaturize the sensor elements further. Adequate miniaturization of seismic masses and distances in the electrostatic damping structures thus makes it possible to operate even high-G acceleration sensors (e.g., for airbag applications) having favorable clipping properties.
a shows a third specific embodiment of the device according to the present invention.
b shows a fourth specific embodiment of the device according to the present invention.
c shows a fifth specific embodiment of the device according to the present invention.
Preferably, the movement of seismic mass 5 to be damped is the movement caused by acceleration a to which inertial sensor 7, 8 is exposed. This movement is different, for example, from the driven oscillation of a yaw rate sensor which represents a reference direction for a yaw rate to be measured utilizing the Coriolis effect. Possible examples of a movement parameter are deflection s(a) of seismic mass 5 caused by acceleration a of inertial sensor 7, 8 and/or speed v(a) of deflection s(a) of seismic mass 5 caused by acceleration a of inertial sensor 7, 8.
At the same time, it is possible that the relationship between force F(v, s) damping the movement of seismic mass 5 and the values of at least one movement parameter v(a), s(a) is provided by the physical mechanism of the damping itself. In the case of electrostatic damping, it is, for example possible that equidirectionally charged moving and damping structures repel one another with increasing intensity as they become closer to one another with the result that damping force F(v, s) “automatically” becomes greater as deflection s(a) increases. The variation of damping force F(v, s) thus automatically follows physical laws such as, for example, the laws of electrostatics.
However, it is just as possible that device 1 of the present invention additionally includes a detection device 6 which is designed to actively detect at least one of the aforementioned movement parameters v(a), s(a) of seismic mass 5. It is possible to implement damping profiles that go beyond the possibilities of the initially described automatic negative feedback damping setting via a damping device 10 which is designed to apply a damping force F(v, s) to seismic mass 5 damping the movement of seismic mass 5 as a function of the detected values of at least one detected movement parameter v(a), s(a).
If damping force F(v, s) is a function of deflection s(a) of seismic mass 5 caused by acceleration a of inertial sensor 7, 8, it is recommended that damping force F(v, s) increase in direct proportion to the increase in deflection s(a) of seismic mass 5 caused by acceleration a of inertial sensor 7, 8. This prevents an overload of inertial sensor 7, 8. It is in particular possible, for example, that damping force F(v, s) is proportional to deflection s(a) of seismic mass 5 caused by acceleration a of inertial sensor 7, 8. It is in particular advantageous if damping force F(v, s) is proportional to the square of deflection s(a) of seismic mass 5 caused by acceleration a of inertial sensor 7, 8. This may be implemented in a manner which is simple in particular through the electrostatic damping already described above, as the force between two electrically charged bodies is inversely proportional to the square of the (growing) distance between the two bodies, or the force between both bodies grows quadratically with the reduction of the distance.
In a similar manner, if damping force F(v, s) is a function of the instantaneous speed of the deflection movement of seismic mass 5 caused by acceleration a of inertial sensor 7, 8, it is advantageous that damping force F(v, s) increases in direct proportion to the instantaneous speed of the deflection movement of seismic mass 5 caused by acceleration a of inertial sensor 7, 8. For example, damping force F(v, s) may be proportional to instantaneous deflection speed v(a) of the deflection movement of seismic mass 5 caused by acceleration a of inertial sensor 7, 8. It is also possible that damping force F(v, s) may be proportional to the square of instantaneous deflection speed v(a) of the deflection movement of seismic mass 5 caused by acceleration a of inertial sensor 7, 8.
In a second specific embodiment of the device according to the present invention,
In a third specific embodiment of the device according to the present invention,
In a fourth specific embodiment of the device according to the present invention,
In a fifth specific embodiment of the device according to the present invention,
Number | Date | Country | Kind |
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102009002068.3 | Apr 2009 | DE | national |