During the manufacturing process samples may develop localized electrical defects that cause current leakage. Exemplary samples could include photovoltaic materials (such as 156 mm×156 mm wafers or 2160 mm×2460 mm panels or a continuous web), semiconductor wafers, or printed circuit boards. Electrical defects, such as shunts and localized weak diodes, leak current and therefore can reduce the efficiency of the sample or even jeopardize the functioning of the devices on the sample. Therefore, it is highly desirable to accurately detect the positions of such electrical defects.
Defects have high current density passing through them and therefore heat up to a higher temperature than that of the sample. These temperature changes can be detected in the image from a focal plane array infrared camera. However, the change in temperature at a defect may be five orders of magnitude smaller than the background in the image. Thus, separating the defects from background noise may be challenging.
Lock-in thermography is one known method for locating such defects. In lock-in thermography, the sample is modulated, such as by direct current injection into the sample or by photocurrent generated from illumination of the sample. When the modulation is by illumination, the method is sometimes called illuminated lock-in thermography. Temperature changes caused by heating of the sample from the injected current or photocurrent are modulated at the same frequency. With either form of modulation, multiple frames of infrared images are captured while the sample remains stationary.
Due to the shot noise of background infrared radiation from the sample at room temperature as well as the very small temperature difference between the defects and the rest of the sample, and the limited dynamic range of the infrared imaging sensor, a large number of images of the same field of view are needed to average out the background noise, thereby improving the signal to noise ratio. Although the captured images are taken from the identical spatial location, they are a function of time as the temperature of the sample oscillates at the frequency of modulation. In a typical embodiment, the images are filtered by multiplying each image by a weighting factor that varies sinusoidally in time at the same frequency as the modulation or “lock-in” frequency. In general, the improvement of signal to noise ratio is proportional to the square root of the total number of frames.
Conventional lock-in thermography requires that the sample remains stationary while the infrared camera acquires the necessary number of images for lock-in averaging. If the size of the sample is greater than the field of view of the camera, the sample (or the infrared camera) needs to move to a completely different location to capture a new set of infrared images after one set of images is captured for one location on the sample. Unfortunately, this stop-go time as well as the settling time (which includes repositioning with its attendant velocity ramp up and ramp down) takes a large portion of the total inspection time, especially for very large samples that can be greater than two meters square in size, thereby undesirably reducing throughput. This overhead in conventional lock-in thermography becomes a significant limiting factor of inspection throughput.
Therefore, a need arises for a technique of detecting defects on a sample that increases inspection throughput compared to conventional lock-in thermography while maintaining its accuracy. The defects that are found can also be repaired with the same instrument, such as by laser isolation.
Conventional lock-in thermography techniques require that the sample remains stationary while the infrared camera acquires the necessary number of images for lock-in integration. After one set of images is acquired, the sample is replaced or repositioned to capture infrared images for a different sample or location. This stationary and repositioning time significantly reduces inspection throughput.
To increase inspection throughput, a method of performing time delay lock-in thermography on a sample is provided. In this method, the field of view of an infrared camera can be moved over the sample at a constant velocity. Throughout this moving, a modulation (such as optical or electrical) can be provided to the sample and infrared images can be captured using the infrared camera. Moving the field of view, providing the modulation, and capturing the infrared images can be synchronized. The infrared images can be filtered to generate the time delay lock-in thermography image, thereby providing defect identification. In one embodiment, this filtering can include sinusoidal weighting at the lock-in frequency that takes into account the number of pixels of the infrared camera in a scanning direction.
Advantageously, this time delay lock-in thermography can be used on various types of samples, such as semiconductor wafers, photovoltaic wafers, large panels of photovoltaic material, continuous webs of photovoltaic material, and printed circuit boards. Further, the moving can be done using any efficient moving components, such as a scanning stage, bi-directional linear stages in a gantry system, a gantry bridge, a conveyor, and/or at least one roller.
In one embodiment, the field of view can be located within a dark field region throughout the moving, thereby providing an improved signal-to-noise ratio during filtering. This dark field technique can also be used in what would otherwise be standard illuminated lock-in thermography. In this method, the sample is illuminated outside the camera field of view. Infrared images can be captured using the infrared camera, wherein providing the modulation and capturing the infrared images are synchronized. The infrared images can be filtered to generate the time-averaged image, thereby providing defect identification. Advantageously, the sample can be rotated or moved linearly to reposition the field of view and the dark field region on another section of the sample. At this point, the steps of providing the modulation, capturing the infrared images, and filtering the infrared images can be repeated.
This dark field technique can be used with various types of samples, such as semiconductor wafers, photovoltaic wafers, photovoltaic panels, continuous webs of deposited photovoltaic material, and printed circuit boards. Positioning and rotating can include using a scanning stage, bi-directional linear stages in a gantry system, a gantry bridge, a conveyor, a rotating chuck, and/or at least one roller.
A system for performing the time delay lock-in thermography can include an infrared camera for capturing images of the sample. Scanning components can move the field of view of the infrared camera over the sample at a constant velocity. Modulation components can provide a modulation to the sample when moving the field of view. A clock source can synchronize the capturing of images, the moving of the field of view, and the source of the modulation. An image processor can receive the captured images and generate the time delay lock-in thermography image to provide defect detection. In one embodiment, a light shield is used to shadow the field of view from the source of illumination for illumination lock-in thermography.
A system for performing dark field illuminated lock-in thermography can include positioning components for positioning the field of view of the infrared camera over the sample. Optical modulation components can provide an optical modulation to the sample after positioning the field of view. A light directing component can provide a dark field region for the field of view. A clock source can synchronize the image acquisition to the modulation. An image processor can receive the captured images and generate the time delay illuminated lock-in thermography image to detect defects on the sample. The light directing component can include a light shield or a light pipe.
A system for performing defect repair by laser isolation or other means may be integrated into the detection system of the present invention. This system could include one or more repair lasers disposed immediately downstream of the infrared camera and activated automatically by the detection of localized defects or hot spots. For example, a 532 nanometer Q-switched laser could be guided by a dual axis galvanometer scanner through a telecentric lens to cut an electrically isolating trench around the defect, thereby isolating the shunt from the rest of the surface. Alternately, the position of the defect could be marked by deposition of an ink or other substance for repair at a later stage of production.
Conventional lock-in thermography systems require that the sample remains stationary while the infrared camera acquires the necessary number of images for lock-in integration. After one set of images are captured for one location on the sample, the sample is repositioned to capture infrared images for a completely different location. This stationary and repositioning time significantly reduces inspection throughput.
Light source 103 can be constructed using multiple light emitting diode modules. However, in other embodiments, light source 103 can be implemented using a standard white light source modulated by a chopper, lasers that are directly modulated, or Q-switch lasers.
A clock source 104 can generate a waveform 105, which is provided to current driver 106. This waveform is converted to a current that, as described above, can drive light source 103 or is directly connected to sample 101. Clock source 104 can also generate triggers 107 that activate an infrared camera 108 to capture infrared images, which in turn are provided to an image processor 110. Clock source 104 can be connected to a stage controller 109, which outputs a positioning encoder pulse to scanning stage 102. In this configuration, as described in further detail below, clock source 104 can advantageously ensure that the speed of sample motion is properly synchronized to the image acquisition frame rate and the modulation rate. In other embodiments, the encoder signal of the stage controller can be used as the clock signal to trigger a function generator for providing modulation to the sample, and also for triggering the infrared camera for image acquisition.
In one embodiment, the discrete sine and cosine transforms are defined as follows.
Where Im,n1 is the pixel value of the (m,n)th pixel of the ith frame, m=1, 2, . . . Nx, n=1, 2 . . . Ny, i=1, 2, 3 . . . , f1 is the frequency of modulation, f2 is the frame rate (preferably an even integer multiple of f1), Nx and Ny are the number of pixels in one frame in the x and y directions, and NF is the total number of frames (such as an integer multiple of the number of modulation cycles).
Note that certain samples may respond differently to different phases of modulation. However, notably, the sine and cosine transforms can be combined to generate an amplitude independent of phase. Specifically, using the values for Sm,n and Cm,n as computed by Equations 1 and 2, the amplitude A and phase image φ are given by:
A=√{square root over (S2+C2)} Equation 3
In contrast,
In one embodiment, the sample can move by a distance of one pixel within the time duration of one frame. Thus, in one embodiment, the total number of frames for time delay lock-in thermography is the same as the number of pixels of the field of view of the infrared camera in the scan direction. Note that image capture can begin with the field of view only slightly overlapping the sample (such as by one pixel or less) to ensure that even the edges of the sample are in fact imaged multiple times.
In other embodiments, the distance that a sample moves between two consecutive frames can be integer multiples, such as 1, 2, 3 . . . pixels, which allows higher inspection speed at a fixed frame rate. The integer multiple approach provides lower sensitivity because the total number of frames for lock-in thermography is reduced by a factor equal to the number of pixels moved. In yet another embodiment, the distance that the sample moves between two consecutive frames can be less than 1 pixel (such as generically 1/N pixel: ⅕ pixel, ¼ pixel, ⅓ pixel, ½ pixel, etc.), which allows higher inspection accuracy, but results in slower inspection speed. In one embodiment, a predetermined number of frames can be designated for capture during each modulation cycle (such as at least 4), thereby determining inspection accuracy as well as the allowed inspection speed.
In accordance with any embodiment of time delay lock-in thermography, as the sample is modulated at a fixed frequency, each imaging pixel of the sample is imaged multiple times as the sample continuously moves across the field of view of the infrared camera. Therefore, an image for each imaging pixel is read out multiple times by a line of the pixels of the infrared imaging sensor, which can form part of the infrared camera. The captured images in a time delay lock-in thermography image are given by the following sine and cosine transforms, which together provide Fourier filtering.
Where Im,n(i+n−1) is the pixel value of the (m,n)th pixel of the (i+n−1)th frame of the infrared images, i=1, 2 . . . , m=1, 2, . . . Nx, n=1, 2, . . . Ny, f1 is the frequency of modulation, and f2 is the frame rate. Preferably f2 is an even integer (≧4) multiple of f1. Nx and Ny are the number of pixels in one frame in the x and y directions. Note that the index n appears in both the subscripts of pixel index and the superscript of frame index of Im,n(i+n−1), which defines the tracking each pixel of a specific spatial position as it moves across the field of view of the infrared camera. The speed V of the moving sample is given by:
V=Pf2 Equation 7
where P is the pixel size on sample. As described above, the speed V of the moving sample, the sample modulation, and the frame triggers can be synchronized to ensure a desired frame capture.
V=kPf2 Equation 8
In one embodiment, k can be an integer of greater than 1, for example, k=2, 3, 4, . . . . In this case, the pixels of each frame can be binned in the scan (y) direction by the number of pixels equal to k. The effective number of pixels in the y direction is reduced by a factor of k, and equations 5 and 6 still apply as long as the image is down-sampled to the effective number of pixels. In another embodiment, k can be less than 1. For example, the sample may move half a pixel per frame interval when k=½, or one third of a pixel when k=⅓. In this case, the effective number of pixels per frame in the scan direction is increased by a factor of 1/k. The effective image may be reconstructed to larger size by re-sampling of the image through interpolation methods such as nearest neighborhood, linear, spline, or cubic interpolations. Equations 5 and 6 still apply as long as the image size in the scan direction is re-sampled to the effective number of pixels increased by the factor of 1/k. Note that the phase and amplitude can then be computed using equations 3 and 4.
Note that the sensor of the infrared camera can have a rectangular format, with rectangular sensor elements (wherein a square is considered as a special case of a rectangle). In one embodiment, the sample moves at a constant speed in a direction parallel to one of the edges of the rectangular sensor. Note that P, the imaging pixel size on the sample, can be computed by the size of the sensor element along the scan direction divided by the magnification of the imaging lens.
In one embodiment of image processor 110, a technique called time delayed integration can synchronize pixel shifting with movement of the sample. Time delayed integration is described in detail in U.S. Pat. No. RE 37,740, entitled “Method and apparatus for optical inspection of substrates”, which issued on Jun. 11, 2002. However, in this reference, time delayed integration captures only one instance of each imaging pixel (such as a line scan imaging mode). Notably, time delayed integration can be modified to keep track of multiple captured images for each imaging pixel as the field of view moves across the sample, thereby allowing time delayed integration to be used in the context of time delay lock-in thermography. This tracking can be performed by a computer-implemented software program installed in image processor 110.
Moreover, also in image processor 110, a single frequency Fourier filter (or matched filter, at the same frequency of modulation) in the time domain can be applied to the captured image, over a window of the multiple frames. As described above, each frame can be shifted by a predetermined number of pixels (1, 2, 3 . . . ) in the scan direction when applying the Fourier filter.
In Equations 5 and 6, each y-column i in the final image is a weighted sum from multiple frames of images, where image n contributes to this sum the column i+n−1.
By using a continuous scan of a sample, time delay lock-in thermography can advantageously eliminate the undesirable stop-go action of conventional lock-in thermography inspection systems, thereby significantly reducing inspection overhead time. Therefore, high throughput inspection in a production environment can be implemented. Notably, by varying the number of pixels moved, time delay lock-in thermography can advantageously optimize a desired speed/sensitivity balance.
Note that when the images of the sample are captured, the sample could be moving with respect to the infrared camera (such as using scanning stage 102 of
In this embodiment, sample 304 is a single sample (such as a thin film, large-scale solar panel formed on a glass substrate). Note that in other embodiments using this gantry system, sample 304 could be replaced with multiple samples.
Multiple parallel infrared cameras can further improve inspection speed. For example,
In one embodiment, an infrared camera can be implemented using a medium wave infrared camera having a sensor resolution of 320×256 pixels. The inspection system including this infrared camera can include the following operating characteristics: a frame rate of 433 frames per second, an imaging resolution of 0.5 mm, a sample speed of 216 mm/s, and an inspection speed of 276 cm2/s.
Referring back to the time delay lock-in thermography system 100, the use of light source 103 to provide current modulation can result in some heat generation. Specifically in the case of solar cells, some portion of the illumination light is converted to heat due to the limited efficiency of solar cells to convert light power to electric power. The heat generated by the illumination can increase the background infrared emission, which results in greater background noise and thus lower detection sensitivity. Notably, because the excessive heat due to illumination is generated at the same frequency as the defect signal modulation, the emissivity difference between different materials (such as metal grid lines vs. silicon) shows in the lock-in thermography image as a non-uniform background noise that may not be easily removed, thereby further reducing the defect sensitivity.
Therefore, in one embodiment, system 100 can use a light shield 111 to create a dark field region for the field of view of the infrared camera. In one embodiment, light shield 111 can be positioned above sample 101 by 2-4 mm, or any other distance that limits illumination of the sample. For example,
Therefore, the sample heating due to excessive photon energy is constrained to be outside of field of view 603. As a result, this indirect illumination advantageously minimizes the background noise inside field of view 603. However, of interest, despite using dark field region 602 for field of view 603, defects are still visible to the infrared camera.
For example,
Referring back to
In one embodiment shown in
Light pipe 802 can be implemented using a solid block of glass that guides the light by total internal reflection of the sidewalls of light pipe 802. In another embodiment, light pipe 802 can be implemented using a hollow tube with mirror surfaces inside. In any implementation of light pipe 802, a clearly defined illumination area (such as rectangular) is projected into sample 804.
Advantageously, a light pipe can be configured to cover large or small areas of a sample. In any configuration, a light pipe can provide a relatively sharply defined border for the dark field region as well as the illuminated area. For example, a light pipe could sharply define the borders of illuminated area 604 of
In other embodiments, a multi-sample dark field lock-in thermography system can be implemented. For example,
Note that other embodiments can include different divisions of the sample. For example,
In one embodiment, both rotational and linear movements can be included in a dark field lock-in thermography system. For example,
Notably, as shown above, providing the dark field region for the field of view can be included in both time delay lock-in thermography and conventional lock-in thermography systems to advantageously reduce background noise when optical modulation is used. Moreover, this dark field lock-in thermography can be used for numerous types of samples, such as semiconductor wafers, solar cells, solar panels, printed circuit boards, and continuous webs.
For example,
In another embodiment, dark field lock-in thermography system 1400 can be easily converted into a time delay, dark field lock-in thermography system. That is, rollers 1403 can be used to provide the constant velocity used in a time delay lock-in thermography system. Note that other embodiments can include fewer or more rollers to provide the advancement of the web sample. Typically, a system implementation using a web sample includes at least one roller.
Although illustrative embodiments of the invention have been described in detail herein with reference to the accompanying figures, it is to be understood that the invention is not limited to those precise embodiments. They are not intended to be exhaustive or to limit the invention to the precise forms disclosed. As such, many modifications and variations will be apparent to practitioners skilled in this art.
For example, as described above for time delay lock-in thermography, when the images of the sample are captured, the sample could be moving with respect to the infrared camera or the infrared camera could be moving with respect to the sample. As used herein, moving an field of view of the infrared camera over the sample is meant to describe either movement. Notably, either movement can provide the same captured images.
Further, note that when time delay lock-in thermography is combined with a dark field region for the inspection of multiple samples (such as samples 503 of
Yet further, referring back to
Note that although the directed illumination configurations described herein provide a border of illumination around the field of view, other embodiments could provide different illumination shapes. That is, because current flows freely through the sample, another illumination configuration could include a plurality (≧2) of illuminated blocks distributed around the field of view that still allow modulation of the field of view.
With reference now to
The inspection and repair operations can, in alternate embodiments, be performed either before or after the final conducting film is applied to the photovoltaic junction. If the inspection by the detection module 1614 is performed before the final contact layer is applied, then it could be performed, for example, by photoemission as described in U.S. patent application Ser. No. 11/690,809 filed 2007.03.24, the disclosure of which is incorporated by reference herein as if laid out in its entirety. The inspection by the detection module 1614 could also be performed by a non-contact measurement of the open circuit voltage under intense illumination by visible light, in which shunted regions will have a reduced voltage. A voltage measurement would not require a vacuum provided by a frictionless air bearing as discussed in application Ser. No. 11/690,809.
In various embodiments, the shunt is repaired by the repair module 1616 by printing, spraying, or otherwise applying or creating an insulating material on the defective track at the appropriate time as determined by the web velocity. If the inspection is performed after the final contact is applied to the web, then in one embodiment the detection module 1614 illuminates the web 18 upstream of a linear charge coupled device array (also a part of the detection module 1614) over a region of great enough area to generate “hot spots” in the material, where the shunted current locally heats the shunted region. The charge coupled device array detects infrared radiation (in the wavelength of about three to five microns) and the surface is repaired by the repair module 1616 such as by laser cutting the transparent conductive oxide as described in U.S. patent application Ser. No. 11/278,158 filed 2006 Mar. 31, the disclosure of which is incorporated by reference herein as if laid out in its entirety.
Alternately, instead of laser cutting near the position of inspection, an ink could be printed on the shunted region to tag it for repair at a position further downstream by another tool. For example, this ink could be a reflective mark to guide a subsequent laser repair, or it could be a chemical agent that diffuses into the oxide and increases the resistivity under anneal.
There are several advantages to the various embodiments of the present invention. For example, only the material in the vicinity of the shunt is affected by the repair, because the repair is accomplished in close proximity a precise detection of the shunt. The floor space of the tool is more compact (if repair is performed by the same tool) and requires significantly less floor space than an electrochemical bath with subsequent rinsing and drying steps. A detailed map of the shunt distribution can be electronically provided to diagnose process excursions such as, for example, in the uniformity of film deposition. Further, algorithms may be implemented to select which shunts are repaired.
The various embodiments of the present invention share several novel features, including (1) the division of the moving web into tracks as defined by the detectors and the repairing tool, (2) the integration of detection and repair (or tagging for repair) into a single tool to minimize errors in defect coordinates during repair and to reduce floor space, (3) voltage detection to locate shunts before final contact is applied, coupled with the application or formation of an insulating material to electrically isolate the shunt, (4) illuminating the web upstream of a linear charge coupled device to create hot spots for infrared detection.
Such a tool can be used on web-based fabrication of thin film CIGS or a-Si photovoltaic material, or on a production line for cadmium telluride or crystalline silicon photovoltaic material. This invention could significantly improve solar cell efficiency by removing shunts and diagnosing process excursions using defect maps of shunts. Shunting sometimes flags process excursions that reduce cell efficiency by other ways in addition to shunting, such as by recombination of carriers at impurity sites or by a low open circuit voltage due to a poorly defined p-n junction.
The various embodiments of the present invention find and repair shunts on a moving production line of photovoltaic material, and act to reduce the distance that a web of photovoltaic material moves between the detection of a shunt and the repair operation of the shunt, by integrating the detection and repair operations within a single tool. This reduces errors between the determination of the position in which a shunt is disposed, and relocating that position at a later point in time when the repair of the shunt is performed. This also reduces the floor space required for the tool.
The foregoing description of preferred embodiments for this invention has been presented for purposes of illustration and description. It is not intended to be exhaustive or to limit the invention to the precise form disclosed. Obvious modifications or variations are possible in light of the above teachings. The embodiments are chosen and described in an effort to provide the best illustrations of the principles of the invention and its practical application, and to thereby enable one of ordinary skill in the art to utilize the invention in various embodiments and with various modifications as are suited to the particular use contemplated. All such modifications and variations are within the scope of the invention as determined by the appended claims when interpreted in accordance with the breadth to which they are fairly, legally, and equitably entitled.
This application is a continuation-in-part of prior pending U.S. patent application Ser. No. 12/026,539, filed Feb. 5, 2008. This invention relates to the field of photovoltaic cells. More particularly, this invention relates to the inline inspection and repair of photovoltaic films.
Number | Date | Country | |
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Parent | 12026539 | Feb 2008 | US |
Child | 12336704 | US |