Claims
- 1. A method of improving uniformity of silicon films deposited by chemical vapor deposition onto a rotatable substrate supported by a susceptor in a vacuum chamber comprising depositing silicon onto a substrate in said chamber; and providing a barrier during deposition of silicon which prevents access of reaction gases and deposition of solid materials on a backside surface of said susceptor, said barrier comprising in combination a preheat ring that surrounds said substrate and has an extension that mates with an extension of a surface of said susceptor.
- 2. A method of improving uniformity of deposited silicon films from one rotatable semiconductor substrate to another substrate comprising
- a) mounting a semiconductor substrate on a susceptor support in a chemical vapor deposition vacuum chamber wherein said susceptor is surrounded by a barrier that prevents access of reaction gases and deposition of solid materials on a backside surface of said susceptor during deposition of silicon, said barrier comprising in combination a preheat ring that surrounds said substrate and has an extension that mates with an extension of a surface of said susceptor,
- b) depositing silicon on said substrate, and
- c) repeating steps a) and b) on a different semiconductor substrate sequentially.
- 3. A method according to claim 2 wherein said substrate is a silicon wafer.
- 4. A method according to claim 2 wherein said reaction gases include hydrogen and silane.
Parent Case Info
This application is a Divisional Application of prior U.S. application Ser. No. 08/300,111 filed on Sep. 2, 1994, which application is a continuation of Ser. No. 08/003,707 filed on Jan. 13, 1993, now abandoned.
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Divisions (1)
|
Number |
Date |
Country |
Parent |
300111 |
Sep 1994 |
|
Continuations (1)
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Number |
Date |
Country |
Parent |
03707 |
Jan 1993 |
|