Claims
- 1. A method of producing a developer carrier for carrying a developer on a surface thereof where a number of microfields are developed, comprising the steps of:
- (a) preparing a conductive base;
- (b) roughening a surface of said conductive base;
- (c) preparing a masking member having a number of small apertures;
- (d) applying dielectric particles dispersed in a solvent to said roughened surface of said conductive base via said small apertures of said masking member; and
- (e) polishing, after said dielectric particles have been hardened, surfaces of said dielectric particles and said surface of said base, wherein said surface of said developer carrier is constituted by conductive bodies of said base and dielectric bodies constituted by said hardened dielectric particles, wherein said dielectric bodies are uniformly distributed along said conductive base and have a center-to-center distance between adjacent dielectric bodies equal to 0.1 mm to 0.5 mm.
- 2. A method as claimed in claim 1, wherein said conductive base prepared in step (a) comprises a metallic material in the form of a roller.
- 3. A method as claimed in claim 1, wherein said conductive base prepared in step (a) comprises a metallic material in the form of a sheet.
- 4. A method as claimed in claim 1, wherein step (b) comprises sand blasting.
- 5. A method as claimed in claim 1, wherein step (d) comprises moving said surface of said conductive base to apply said dielectric particles to the entire surface of said base.
- 6. A method as claimed in claim 1, wherein step (d) comprises spraying said dielectric particles.
- 7. A method as claimed in claim 1, wherein step (d) comprises applying said dielectric particles by evaporation.
- 8. A method as claimed in claim 1, further comprising the step of (f) drying said solvent by hot air after step (d).
- 9. A method as claimed in claim 1, further comprising the step of (f) drying said solvent in air after step (f).
- 10. A method of producing a developer carrier for carrying a developer on a surface thereof where a number of microfields are developed, comprising the steps of:
- (a) preparing a conductive base and a masking member having a number of small apertures;
- (b) causing said masking member into close contact with a surface of said conductive base;
- (c) applying an etching liquid to said surface of said conductive base via said apertures of said masking member to erode only surface portions of said conductive base which underlie said apertures for forming a number of small recesses;
- (d) coating said surface of said conductive base with a dielectric substance to fill said number of recesses; and
- (e) polishing said surface of said conductive base after said dielectric substance in said number of recesses has been hardened, wherein said surface of said developer carrier is constituted by conductive bodies of said conductive substrate and dielectric bodies constituted by said hardened dielectric substance adjacent said dielectric bodies which are uniformly distributed along said conductive base and have a center-to-center distance of 0.1 mm to 0.5 mm.
- 11. A method as claimed in claim 10, wherein said conductive base prepared in step (a) comprises a metallic material in the form of a roller.
- 12. A method as claimed in claim 10, wherein said conductive base prepared in step (a) comprises a metallic material in the form of a sheet.
- 13. A method according to claim 1, wherein said number of small apertures form a regular array of apertures.
- 14. A method according to claim 13, wherein said regular array of apertures comprise V-shaped apertures.
- 15. A method according to claim 13, wherein said regular array of apertures comprise rectangular apertures.
- 16. A method according to claim 10, wherein said number of small apertures form a regular array of apertures.
- 17. A method according to claim 16, wherein each of said number of small apertures have rectangular openings.
- 18. A method according to claim 16, wherein each of said number of small apertures have circular openings.
- 19. A method for producing a developer carrier, said developer carrier for carrying a developer on a surface thereof via electrostatic attraction between particles of said developer and microfields on the surface of said developer carrier, comprising the steps of:
- (a) preparing a conductive base;
- (b) roughening a surface of said conductive base;
- (c) providing a masking member comprising a plurality of small apertures and masking the roughened surface of said conductive base with said masking member; and
- (d) applying dielectric particles to the conductive base, adjacent bodies of said particles which are uniformly distributed along said conductive base and have a center-to-center distance of 0.1 mm to 0.5 mm through said plurality of small apertures.
- 20. A method according to claim 19, wherein said step of applying further comprises the steps of:
- preparing a dispersion of dielectric particles in a solvent and applying the dispersion to the masking member to provide dielectric particles to the roughened surface of said conductive base through said small apertures of said masking member; and
- hardening the dielectric particles that have been applied to the roughened surface of the conductive base.
- 21. A method according to claim 19, wherein said plurality of small apertures comprise a regular array of identically shaped apertures.
- 22. A method of producing a developer carrier, said developer carrier for carrying a developer on a surface thereon via electrostatic attraction of the developer by microfields that are generated at the surface of the developer carrier, comprising the steps of:
- (a) preparing a conductive base;
- (b) preparing a masking member having a number of small apertures;
- (c) masking a surface of the conductive base by placing said masking member adjacent to said surface of said conducting base;
- (d) applying an etching liquid to the regions of said surface of said conducting base which are exposed through the small apertures of said masking member to thereby form small recesses corresponding to the small apertures;
- (e) moving the masking member away from said surface or the conducting base and then coating said surface of the conductive base with a dielectric substance forming adjacent dielectric bodies which are uniformly distributed along said conductive base and have a center-to-center distance of 0.1 mm to 0.5 mm; and
- (f) polishing the surface that is formed by the coating of the dielectric substance.
- 23. A method according to 22, wherein said small apertures comprise a regular array of identically shaped apertures.
- 24. A method according to claim 22, wherein said dielectric substance completely covers said surface of said conductive base.
Priority Claims (3)
Number |
Date |
Country |
Kind |
2-74801 |
Mar 1990 |
JPX |
|
2-30511 |
Mar 1990 |
JPX |
|
2-87160 |
Mar 1990 |
JPX |
|
Parent Case Info
This application is a continuation of application Ser. No. 08/298,297, filed on Sep. 1, 1994, now abandoned which is a divisional of Ser. No. 07/983,297 filed Nov. 30, 1992, now abandoned, which is a continuation of Ser. No. 07/674,161 filed Mar. 25, 1991, now abandoned.
US Referenced Citations (15)
Foreign Referenced Citations (1)
Number |
Date |
Country |
58-72968 |
May 1983 |
JPX |
Divisions (1)
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Number |
Date |
Country |
Parent |
983297 |
Nov 1992 |
|
Continuations (2)
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Number |
Date |
Country |
Parent |
298297 |
Sep 1994 |
|
Parent |
674161 |
Mar 1991 |
|